LiF晶体F3+色心的实验研究

本文从实验上系统地研究了在不同条件下电子束辐照LiF晶体所形成的F₃⁺色心的光学特点。并且由荧光光谱分析了F₃⁺心和F₂心,的相对密度关系。实验表明,辐照温度对于色心的形成和密度的相对大小起着关键的作用。主要实验结果包括:1)在液氮温度下辐照,然后在暗处加热至室温可形成高密度的F₃⁺心,表现在发射光谱中F₃⁺心荧光占绝对优势。吸收光谱表明没有N心和R心。2)由动力学荧光谱可以看到低温辐照的样品在F₂⁺心衰变的同时,F₃⁺心密度迅速增加。而室温辐照的样品则是F₂心,与F₃⁺心的密度以近似相等的速率增加。3)详细观察了F₃⁺心530nm荧光激发带与F₂心670nm荧光激发带半宽度的变化和双峰结构。由此对M吸收区的发光特点作了解释。 关键词：     

低温下电子束辐照产生F2+心及其荧光发射

用自制的低温装置保持LiF晶体的温度为77K,同时用电子束辐照,产生了浓度高达10¹⁷cm^-3的F₂⁺心。并对F₂⁺心荧光发射特性进行了实验观测和理论分析。 关键词：     

BaFBr:Eu2+中的新型色心及其光激励发光

本文报导了BaFBr:EU²⁺晶体中的新型色心,即F₂,F₃和F₄心.F₂、F₃和F₄的吸收带分别位于670—715nm,810—900nm和970—995nm.它们是由F心的凝聚作用而形成的缔合中心.由于这些色心比F心稳定,且它们的吸收带偏离Eu²⁺的发射波长(390nm)更远,故更适合于BaFBr:Eu²⁺光激励发光的研究和开发.     

H1+,H2+,H3+和He,Ne,Ar碰撞过程中的巴耳末系Hα,Hβ,Hγ发射

实验利用TN-1710光学多道分析系统(OMA),对H₁⁺,H₂⁺,H₃⁺和He,Ne,Ar碰撞过程中产生的巴耳末系H_α,H_β,H_γ发射进行了测量,入射离子H₁⁺,H₂⁺,H₃⁺的 关键词：     

CaMoO4：Eu3+,Bi3+,Li+红色荧光粉的共沉淀制备与表征

采用共沉淀法合成了红色荧光粉Ca_0.75MoO₄：Eu_0.25³⁺、Ca_0.75MoO₄：Eu_0.25-x³⁺,Bi_x³⁺及Ca_0.5MoO₄：Eu_0.25-2x³⁺, Bi_x³⁺,Li_0.25+x⁺,并采用X射线衍射(XRD)、拉曼光谱,扫描电镜(SEM)和荧光光谱(PL)测定分析了其结构形貌特征及发光性能。结果表明：制备的CaMoO₄：Eu³⁺,Bi³⁺,Li⁺红色荧光粉为白钨矿结构,颗粒尺寸约为0.5~1 μm。掺杂Bi³⁺的Ca_0.75MoO₄：Eu_0.25-x³⁺,Bi_x³⁺的相对发光强度明显高于未掺Bi³⁺的Ca_0.75MoO₄：Eu_0.25³⁺荧光粉。Bi³⁺离子的掺杂将吸收来的能量传递给激活离子Eu³⁺,起到了能量传递的作用。当Bi³⁺掺杂量为x=0.005时,在395 nm激发下,主发射峰在616 nm处的相对发光强度最大,但掺杂浓度过高时会出现浓度猝灭现象。另外,电荷补偿剂的掺入能够解决材料中因同晶取代引起的电荷不平衡的问题,以Li⁺作电荷补偿剂、Eu³⁺和 Bi³⁺共掺合成的Ca_0.5MoO₄：Eu³⁺_0.23,Bi_0.01³⁺,Li⁺_0.26红色荧光粉的发光性能强于Ca_0.75MoO₄：Eu_0.25³⁺、Ca_0.5MoO₄：Eu_0.25³⁺, Li_0.25⁺及Ca_0.75MoO₄：Eu_0.24³⁺,Bi_0.01³⁺。     

KCl:OH-中O2-色心实验研究

通过调制吸收光谱和电子自旋共振(ESR)谱的测量得知,在被高能射线辐照前后,KCl:OH^-中氧的成分主要以O₂^-的形式存在。O₂^-在样品中的浓度随辐照时间增加而增加,直至(OH)^-完全被辐照分解。O₂^-有相当强的稳定性。其存在与产生过程对增加F₂⁺激光色心的稳定性无直接作用。本文还根据ES 关键词：     

钙钛矿型晶体A(B1/31B2/32)O3中的有序-无序相变

本文利用原子集团变分方法,讨论了A⁺²(B_1/3⁺²B_2/3⁺⁵)O₃系统中有序-无序相变,指出在此系统中相互作用能参数对形成(B_2/3⁺²B_1/3⁺⁵)_1/2:B_1/2⁺⁵=1:1的混合型有序畴和B_{1/3关键词：}     

荧光粉CaWO4：Eu3+中WO42-与Eu3+间的能量转递

通过高温固相法分别制备了CaWO₄和CaWO₄:1%Eu³⁺ 样品. 测量了样品不同温度(10–300 K)的荧光光谱、荧光衰减曲线和 时间分辨荧光光谱. 样品的荧光光谱表明: 在240 nm紫外光激发下, 两个样品在430 nm处都展现出来源于WO₄^2-的蓝色发射; 样品CaWO₄:Eu³⁺的Eu³⁺(⁵D₀→⁷F_{1, 2, 3,4})的特征发射则归属于WO₄^2-到Eu³⁺ 间的能量传递.由样品室温(300K)荧光衰减曲线发现: 纯CaWO₄的荧光寿命为8.85μs,Eu³⁺掺杂之后WO₄^2-的荧光寿命缩短至6.27μs,这从另一方面证明了WO₄^2-与Eu³⁺间能量传递的存在. 由荧光寿命得到T=300K时, CaWO₄: 1%Eu³⁺中WO₄^2-与Eu³⁺间的能量传递效率(η_ET)为29.2%, 能量传递速率(ω_ET)为4.65×10⁴ s^-1.通过时间分辨荧光光谱, 获得了从WO₄^2-到Eu³⁺之间的能量传递的时间演变过程,当温度由10 K增加到300 K时, 能量传递出现的时间单调变小. 测试了不同温度(10–300 K)对CaWO₄:Eu³⁺的荧光寿命的影响, 发现在10–50K时,Eu³⁺的荧光寿命增加, 但温度超过50K时发生猝灭, 荧光寿命开始下降; WO₄^2-的荧光寿命则是随着温度的升高逐渐缩短. 关键词： 能量传递 红色荧光粉 温度依赖 4：Eu³⁺')" href="#">CaWO₄：Eu³⁺     

50-keV/u Ne8+离子碰撞导致的C3H42+三体解离机制

利用反应显微成像谱仪开展了50-keV/u Ne⁸⁺离子与C₃H₄分子碰撞实验,研究了丙二烯(CH₂CCH₂)和丙炔(CH₃CCH)两种同分异构分子形成C₃H₄²⁺二价离子并解离产生H⁺C₃H₂⁺H的过程.实验获得了H⁺和C₃H₂⁺的动量,进而通过动量守恒得到第3个碎片的动量.通过分析3个碎片的动能及解离的动能释放鉴别出未被探测的碎片为中性H原子的事件.借助Dalitz图、Newton图以及碎片产物的角分布等分析了该通道的动力学机制.结果表明,次序解离是该解离通道的主要机制,在碎裂过程中二价母体离子先解离成H⁺和C₃H₃⁺,中间体的...     

Li+和Er3+掺杂对Ba2SiO4：Eu2+发光性能的影响

采用化学沉淀法一次煅烧工艺制备了Ba_1.99-x/2-2ySiO₄:Eu_0.01²⁺, Li_x+y²⁺, Eu_y³⁺绿色荧光粉, 用X射线衍射仪和荧光分光光度计对样品的晶体结构、发光性能进行表征. 结果表明: 少量Eu²⁺, Li⁺和Er³⁺的共掺杂没有改变晶体结构; 其激发光谱分布在270–440 nm波长范围, 谱峰位于288 nm, 360 nm处, 可以被InGaN 管芯产生的360–410 nm辐射有效激发; 在360 nm近紫外光激发下, 测得其发射光谱峰值在500 nm 处, 是Eu²⁺4f⁶5d¹→4f⁷跃迁的典型发射; 荧光粉发光强度随着Li⁺掺杂量的增大先增强, 后减弱, 当x=0.1时, 发光强度最大; 随着Li⁺, Er³⁺共掺杂量的增加(y=0.012), 出现位于530 nm和488 nm的发射峰, 对应于Er³⁺的²H_11/2→⁴I_15/2和⁴F_7/2→⁴I_15/2特征发射, 同时分析了Eu²⁺→Er³⁺的能量传递过程. 关键词： 化学沉淀法 2SiO₄：Eu²⁺,Li⁺,Er³⁺')" href="#">Ba₂SiO₄：Eu²⁺,Li⁺,Er³⁺ 能量传递 发光性能     

Luminescence and radiation-induced color centers in anion-defective alumina crystals after high-dose irradiation

A method of UV spectroscopy was used to measure photoluminescence (PL) spectra and photoluminescence excitation (PLE) spectra in anion-defective alumina crystals exposed to high doses of gamma-radiation. An additional emission band in the range of 1.6–2.75 eV appears in the exposed crystals. Aggregate F₂-type centers in different charge states are responsible for this band. It was found that growing intensity of PL aggregate centers occurs at doses corresponding to saturation of dose response and is accompanied by a sharp drop in the intensity of F⁺-band in the PL spectrum resulting from combination of F⁺-centers into aggregates. Uncharged F₂-centers are formed when electrons are trapped by F₂⁺ and F₂²⁺-centers. The main role of F⁺-centers in radiation-induced transformations of color centers under high-dose irradiation of anion-defective alumina crystals was indicated.     

Proton-induced F-centers in LiF and MgF2

The growth of F-centers in LiF irradiated at room temperature with 40- and 85-MeV protons and with ⁹⁰Sr electrons was found to be proportional to the square root of the absorbed energy over the range 0.5 to 2.3 Mrad which corresponds to an F-center density range of 1 × 10¹⁶ to 1.5 × 10¹⁷ per cm³. The production efficiency was 5 × 10³eV per F-center at an absorbed energy of 2.3 Mrad. The density of F-centers produced in MgF₂ by 40- and 85-MeV protons was measured over an absorbed energy range of 0.2 to 29 Mrad which corresponds to a maximum F-center density of 2 × 10¹⁶ per cm³. The production efficiency for MgF₂ was 4 × 10⁵eV per F-center at an absorbed energy of 16 Mrad.     

Formation of Color Centers and Molecular Complexes with a Weak Hydrogen Bond in Lithium Fluoride Crystals Depending on the Form of OH<Superscript>¯</Superscript> Inclusion

The form of oxygen-containing inclusions in the LiF crystal was shown to be determined by the laws of isomorphic substitution and impurity accumulation in a melt during crystal growth in open air. Color centers and hydrogen-bonded complexes of different types appear in the LiF crystal after irradiation depending on the form of OH^– and Mg²⁺ inclusions. The radiative decay of OH^– ions and the properties of molecular complexes (MCs) with a weak hydrogen bond are responsible for the decreased efficiency of formation of the F- and F₂-color centers and increased concentration of the positively charged F ₂ ⁺ - and F ₃ ⁺ -centers. Radiochemical reactions involving hydrogen and fluorine atoms and ions that compete with the formation of color centers were presented.     

The optical and paramagnetic absorption spectra of MgO:Mn single crystals irradiated in a reactor

The optical and paramagnetic absorption spectra of MgO:Mn crystals of different origin, irradiated in a reactor, have been investigated. It is found that, in spite of only a small amount of Mn²⁺ impurity ions in the investigated crystals, their influence on the efficiency of formation and accumulation of F⁺-centers is dominant. The dependence of the number of F⁺-centers both on irradiation dose and on manganese concentration is studied.     

Mechanisms of ionization of <Emphasis Type="Italic">F</Emphasis><Subscript>2</Subscript>-centers in laser media on the basis of LiF crystals

F₂ color centers with a superhigh concentration (5000-cm^–1 absorption coefficient at 450 nm) were formed by high-density electron beams in a layer of LiF crystals of micrometer thickness. The F₂-centers excited by high-power nanosecond wide-band optical pulses (the “soft” pumping regime) efficiently amplified the laser radiation and showed high stability under these conditions. A low stability of F₂-centers to laser radiation (the “hard” excitation regime) is explained by the dissociation of (F ₂ ⁺ , F^–) pairs induced by two-step ionization of F₂-centers: (2hν > 4.5 eV) → F₂ → (F₂)* → F ₂ ⁺ + e; F + e → F^–; F ₂ ⁺ + F^– → 3F.     

Photoluminescence properties of SHI induced F2 and F3 color centers in nano-granular LiF thin films

Photoluminescence (PL) properties of swift heavy ions-induced F₂ and F₃⁺ color centers in nano-granular lithium fluoride (LiF) thin film were studied. LiF films were deposited on glass and silica substrates and irradiated with various ion species (Ag, Ni and Au) at different irradiation temperatures. The role of ion species, their fluence and the irradiation temperature on the PL intensity of color centers induced in LiF thin films is discussed.     

Defect evolution and photoluminescence in anion-defective alumina single crystals exposed to high doses of gamma-rays

A method of luminescent UV and VUV spectroscopy was used to study the evolution of color centers in anion-defective alumina single crystals exposed to high doses of gamma-radiation. A sharp drop in the intensity of the emission bands and, therefore, the concentration of F⁺ and F-centers associated with the formation of aggregate F₂-type centers was found. The aggregate centers create an additional emission band in the range of (1.8–2.8) eV. When the crystals are exposed to middle and high doses, the photoluminescence (PL) intensity is the highest in the emission band of F₂²⁺-centers, which indicates a high concentration of the aggregates from singly charged oxygen vacancies (of F⁺-centers). When PL of the crystals exposed to high doses is excited with synchrotron radiation of the VUV range, a wide emission band in the red and near infrared (NIR) regions is registered. The centers related presumably to impurity defects, their aggregates and clusters consisting of several oxygen vacancies are responsible for this emission band.