Absorption optical bistability in semiconductors under the action of an external electric field

The conditions for the realization of absorption optical bistability under the simultaneous action of two (radiative and nonradiative) mechanisms of recombination of free charge carriers are investigated. It is shown that, in the diffusion mechanism of stream of free electrons from the beam axis, the temperature dependence of radiative recombination does not expand the temperature range of the thermostat in which the optical bistability occurs. A scheme is proposed with application of an external transverse electric field, which makes it possible to realize absorption optical bistability at any ambient temperature. An important advantage of this scheme is the conservation of the state of a bistable system after the action of a light pulse and a significant decrease in the energy spent on cooling of the medium.     

Threshold formation of an intermolecular charge transfer complex of a semiconducting polymer

It has been found that the formation of an intermolecular charge transfer complex in the ground electronic state between the model conjugated polymer (poly[2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV) and the low-molecular-weight organic acceptor (2,4,7-trinitrofluorenone, TNF) occurs stepwise with an increase in the acceptor concentration in the blend as is observed in the optical absorption spectra of solutions. The threshold dependence of the absorption of the charge transfer complex is attributed to the stepwise change in the concentration of the charge transfer complexes, which is not explained by the standard model describing the optical characteristics of intermolecular charge transfer complexes. A kinematic model has been proposed to explain the threshold increase in the concentration of charge transfer complexes: at low acceptor concentrations, the charge transfer complex is formed primarily on the surface of a polymer coil, whereas as the acceptor fraction in the solution increases, TNF molecules penetrate inside the polymer coils, forming the charge transfer complex with the units of the polymer inside the coil.     

Investigation of third-order nonlinear optical properties of two azo-nickel chelate compounds

This paper investigates the third-order nonlinear optical properties of two azo-nickel chelate compounds by the optical Kerr gate method at 830 nm wavelength with pulse duration of 120 fs. Both of the two compounds exhibited large third-order optical nonlinearity. The second-order hyperpolarizability,γ, of Compound 1 is of 1.0 × 10^-31 esu. Due to the charge transfer, the γ of Compound 2 with electron donor and acceptor group is 4.9 × 10^-31 esu, which is a four-time enhancement in comparison with Compound i. The absorption spectra show that the electron push-pull effect, which induces intramolecular charge transfer, leads to the increased optical nonlinearity.     

Charge carrier interaction with a purely electronic collective mode: plasmarons and the infrared response of elemental bismuth

We present a detailed optical study of single-crystal bismuth using infrared reflectivity and ellipsometry. Large changes in the plasmon frequency are observed as a function of temperature due to charge transfer between hole and electron Fermi pockets. In the optical conductivity, an anomalous temperature dependent midinfrared absorption feature is observed. An extended Drude model analysis reveals that it can be connected to a sharp upturn in the scattering rate, the frequency of which exactly tracks the temperature dependent plasmon frequency. We interpret this absorption and increased scattering as direct optical evidence for a charge carrier interaction with a collective mode of purely electronic origin, here electron-plasmon scattering. The observation of a plasmaron as such is made possible only by the unique coincidence of various energy scales and exceptional properties of semimetal bismuth.     

End-pumped optical bistability Tm,Ho:YLF laser

We experimentally demonstrate strong optical bistability in a 2 μm continuous wave Tm,Ho:YLF laser with a bulk crystal. The laser is end-pumped by a 792 nm fiber-coupled laser diode. The bistable region is as wide as 1.6 W and the jump power at the turning point is as high as 82.5 mW when the temperature of the laser crystal is kept at 253 K. The influences of the cavity length and the transmission of the output coupler on the characteristics of optical bistability are obtained. The theoretical analysis shows that the bistable output in the Tm,Ho:YLF lasers comes from the combined effects of the nonlinear saturation of ground state reabsorption, the energy transfer upconversion, and the excited state absorption.     

富勒烯C60掺杂的共轭高聚物混合薄膜的光谱性质

测量了不同富勒烯C60掺杂浓度的聚对亚苯基亚乙烯衍生物（MEH-PPV）混合薄膜的紫外-可见吸收光谱、稳态荧光和时间分辨荧光光谱。观察到MEH-PPV吸收峰受到明显的抑制以及荧光峰的猝灭。证明混合薄膜内，由于л-л共轭体系的强相互作用在基态发生MEH-PPV向C60的电子转移、形成电荷转移络合物。在光激发下会发生MEH-PPV向C60的激发传递进一步抑制了发光跃迁过程，导致了MEH-PPV荧光的强猝灭效应。     

Cs/GaN(0001)吸附体系电子结构和光学性质研究

采用基于第一性原理的密度泛函理论平面波超软赝势方法计算了 1/4ML Cs原子吸附 (2 × 2) GaN(0001) 表面的吸附能、能带结构、电子态密度、电荷布居数、功函数和光学性质. 计算发现, 1/4ML Cs 原子在 GaN(0001) 表面最稳定吸附位为 N 桥位, 吸附后表面仍呈现为金属导电特性, Cs原子吸附GaN(0001)表面后主要与表面 Ga 原子发生作用, Cs6s 态电子向最表面 Ga 原子转移, 引起表面功函数下降. 研究光学性质发现, Cs 原子吸附 GaN(0001) 表面后, 介电函数虚部、吸收谱、反射谱向低能方向移动.     

Electrical and optical properties of pure and KClO3-doped P(MMA-CO-4VPNO) polymer electrolyte films

Ion-conducting polymer electrolyte films based on a copolymer poly(methyl-methacrylate-co-4-vinyl pyridine N-oxide) [P(MMA-CO-4VPNO)] complexed with potassium chlorate (KClO₃) were prepared by solution cast technique. The complexation of KClO₃ salt with the polymer was confirmed by X-ray diffraction and infrared studies. The electrical conductivity and optical absorption of pure and KClO₃-doped P(MMA-CO-4VPNO) polymer electrolyte films have been studied. The electrical conductivity increased with increasing dopant concentration, which is attributed to the formation of charge transfer complexes. The variation of electrical conductivity with temperature shows two regions with two activation energies. Optical properties like direct band gap, indirect band gap, and optical absorption edge were investigated for pure and doped polymer films in the wavelength range 300–550 nm. It was found that the energy gaps and band edge values shifted to lower energies on doping. The behavior is in an agreement with the activation energies obtained from the conductivity data.     

Microscopic model of the optical absorption of carbon nanotubes functionalized with molecular spiropyran photoswitches

The adsorption of molecules to the surface of carbon nanostructures opens a new field of hybrid systems with distinct and controllable properties. We present a microscopic study of the optical absorption in carbon nanotubes functionalized with molecular spiropyran photoswitches. The switching process induces a change in the dipole moment leading to a significant coupling to the charge carriers in the nanotube. As a result, the absorption spectra of functionalized tubes reveal a considerable redshift of transition energies depending on the switching state of the spiropyran molecule. Our results suggest that carbon nanotubes are excellent substrates for the optical readout of spiropyran-based molecular switches. The gained insights can be applied to other noncovalently functionalized one-dimensional nanostructures in an externally induced dipole field.     

Weak intermolecular charge transfer in the ground state of a π-conjugated polymer chain

We show that a π-conjugated polymer chain can demonstrate weak intermolecular charge transfer in the electronic ground state. Poly[2-methoxy-5-(2′-ethyl-hexyloxy)-1,4-phenylene vinylene]/2,4,7-trinitrofluorenone (MEH-PPV/TNF) donor-acceptor films have been studied by optical absorption, Raman, infrared spectroscopy, and differential scanning calorimetry. The factors influencing weak intermolecular charge transfer in π-conjugated chains are discussed.     

An EPR study of optical absorption of the oxygen-vacancy pair in electron-irradiated silicon

The negative charge state of the vacancy-oxygen pair (Si-B1) in irradiated silicon was populated by illumination with polarized light, from which the direction of the electric dipole moment was determined to be near 〈110〉 perpendicular to the (Si-O-Si) bond axis. Energy dependence of the alignment suggests the presence of an optical absorption band at λ = 1.30 μm.     

A superresolution optical disk with a combination of optical path filtering and saturable absorption techniques

Calculations have been done for the modulation transfer function of a superresolution optical disk with a combination of optical path filtering and saturable absorption techniques. The results reveal that optical path filtering alone can only equalize, to a certain degree, the spatial frequency response of the opticaldisk system, but it can not attain any response beyond the cutoff frequency. With an additional saturable absorption layer in-between the substrate and the information layer, it is found that the optical response both under and beyond the cutoff frequency can be greatly improved.     

Thermal stability of optical properties of electron-irradiated GaAs

We have studied the thermal stability of the secondary absorption in gallium arsenide which was irradiated with electrons. The annealing temperatures of a number of radiation defects have been determined. The charge state of the H₁-center has a significant influence on its thermal stability. Reasons are discussed for the differences in annealing properties of radiation defects based on capacitive properties and optical absorption.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 49–53, February, 1982.     

Parameters of light-induced charge transfer processes in photorefractive crystals

A method is outlined by which the parameters governing light-induced charge transfer processes in photorefractive crystals can be determined. The system BaTiO₃:Rh is treated as an example. EPR is used to obtain information on the EPR-active defect charge states. Through simultaneous observation of light-induced EPR-and optical absorption changes, the corresponding optical absorption bands are established as fingerprints of the defect charge states. Consistency arguments make it possible to label EPR-silent absorption bands in this way also, significantly extending the scope of EPR-based defect studies. On this basis, the charge transfer paths taking place under illumination are identified. Quantitatively, the defect concentrations are directly or indirectly derived from the available EPR signals. In addition, the kinetics of the light-induced changes of the densities of the occurring defect charge states are studied. In conjunction with the defect concentrations, this makes it possible to deduce the responsible transfer parameters.     

Ultrafast optical nonlinearity in the quasi-one-dimensional mott insulator Sr2CuO3

We report strong instantaneous photoinduced absorption in the quasi-one-dimensional Mott insulator Sr2CuO3 in the IR spectral region. The observed photoinduced absorption is to an even-parity two-photon state that occurs immediately above the absorption edge. Theoretical calculation based on a two-band extended Hubbard model explains the experimental features and indicates that the strong two-photon absorption is due to a very large dipole coupling between nearly degenerate one- and two-photon states. Room temperature picosecond recovery of the optical transparency suggests the strong potential of Sr2CuO3 for all-optical switching.     

Theoretical study about the gain in indirect bandgap semiconductor optical cavities

Indirect bandgap semiconductors such as silicon are not efficient light emitters because a phonon with a high momentum is required to transfer an electron from the conduction to the valence band. In a recent study (M.J. Chen et al., 2006) [6] an analytical expression of the optical gain in bulk indirect bandgap semiconductors was obtained. The main conclusion was that the free-carrier absorption was much higher than the optical gain at ambient temperature, which prevents lasing. In this work, we consider the case in which the semiconductor material is engineered to form an optical cavity characterized by a certain Purcell factor. We conclude that although the optical gain is increased, losses due to free carriers increase in the same way so lasing is also prevented even when creating a high-Q optical cavity.     

Electrical,optical, and structural characterization of polymer blend (PVC/PMMA) electrolyte films

Ion-conducting solid polymer blend electrolytes based on polyvinyl chloride (PVC)/poly methyl methacrylate (PMMA) complexed with sodium perchlorate (NaClO₄) were prepared in various concentrations by solution cast technique. The features of complexation of the electrolytes were studied by X-ray diffraction (XRD) and Fourier transform infrared (FTIR) spectroscopy. DC conductivity of the films was measured in the temperature range 303–398 K. Transference number measurements were carried out to investigate the nature of charge transport in the polymer blend electrolyte system. The electrical conductivity increased with increasing dopant concentration, which is attributed to the formation of charge transfer complexes. The polymer complexes exhibited Arrhenius type dependence of conductivity with temperature. In the temperature range studied, two regions with different activation energies were observed. Transference number data showed that the charge transport in this system is predominantly due to ions. Optical properties like absorption edge, direct band gap, and indirect band gap were estimated for pure and doped films from their optical absorption spectra in the wavelength region 200–600 nm. It was found that the energy gap and band edge values shifted to lower energies on doping with NaClO₄ salt. Paper presented at the Third International Conference on Ionic Devices (ICID 2006), Chennai, Tamil Nadu, India, Dec. 7–9, 2006.     

Transient optical absorption and luminescence in Li2B4O7 lithium tetraborate

This paper reports on a study of the transient optical absorption exhibited by Li₂B₄O₇ (LTB) in the visible and UV spectral regions. Using absorption optical spectroscopy with nanosecond time resolution, it is established that the transient optical absorption (TOA) in these crystals originates from optical transitions in hole centers and that the kinetics of the optical-density relaxation is controlled by interdefect tunneling recombination, which involves these hole centers and electronic Li⁰ centers representing neutral lithium atoms. At 290 K, the Li⁰ centers migrate in a thermally stimulated, one-dimensional manner, without carrier ejection into the conduction or valence band. The kinetics of the pulsed LTB cathodoluminescence is shown to be controlled by a relaxation process connected with tunneling electron transfer from a deep center to a small hole polaron migrating nearby, a process followed by the formation of a self-trapped exciton (STE) in an excited state. Radiative annihilation of the STE accounts for the characteristic σ-polarized LTB luminescence at 3.6 eV, whose kinetics is rate-limited by the tunneling electron transfer.     

Charge state switching of deep levels for low-power optical modulation in silicon waveguides

We demonstrate a method for the efficient modulation of optical wavelengths around 1550 nm in silicon waveguides. The amplitude of a propagating signal is mediated via control of the charge state of indium centers, rather than using free-carriers alone as in the plasma-dispersion effect. A 1×1 switch formed of an integrated p-i-n junction in an indium-doped silicon on insulator (SOI) waveguide provides 'normally-off' silicon absorption of greater than 7 dB at zero bias. This loss is decreased to 2.8 dB with application of a 6 V applied reverse bias, with a power consumption of less than 1 μW.     

取代基对8-羟基喹啉金属配合物电子光谱和二阶非线性光学性质的影响

在B3LYP/LANL2DZ/6-31G^*水平上优化目标化合物分子的几何结构,并分别在TD- B3LYP/LANL2DZ/6-31++G^**和B3LYP/LANL2DZ/6-31++G^**水平计算目标化合物分子的电子吸收光谱和二阶非线性光学性质.计算结果表明,引入共轭给电子基使配合物分子的最大吸收波长红移,强共轭吸电子基的引入使配合物的最大吸收波长蓝移,取代基的引入使IrQ₃型配合物的二阶非线性光学性质明显增大.对AgQ型配合物,电子跃迁属于配体内部的电荷转移（LLCT）.对PtQ₂和IrQ₃型配合物,电子跃迁属于LLCT和部分金属向配体的电荷转移.取代基对AgQ,PtQ₂,IrQ₃型配合物分子的跃迁性质几乎无影响. 关键词： 8-羟基喹啉金属配合物 电子光谱 二阶非线性光学性质 密度泛函理论