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有机薄膜材料的电致发光 总被引:2,自引:2,他引:0
有机薄膜材料的电致发光具有低压直流驱动、高亮度、高效率、多色、可制成大面积等优点 ,近几年来取得突破性的进展引起了越来越多的关注和兴趣。本文主要介绍了它的发展历程、器件的结构与材料、发光的基本原理等 相似文献
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交流电激发下的聚合物PPV单层薄膜发光器件的电致发光*张凤玲a,b)杨志敏a)徐征a)黄宗浩c)徐长远a)王永生a)徐叙王容a,b)a)(北方交通大学光电子技术研究所,北京100044)b)(天津理工学院材料物理研究所,天津300191)c)(东北师... 相似文献
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Electrically driven single photon source based on single InAs quantum dot (QDs) is demonstrated. The device contains InAs QDs within a planar cavity formed between a bottom AlCaAs/CaAs distributed Bragg reflector (DBR) and a surface CaAs-air interface. The device is characterized by I-V curve and electroluminescence, and a single sharp exciton emission line at 966nm is observed. Hanbury Brown and Twiss (HBT) correlation measurements demonstrate single photon emission with suppression of multiphoton emission to below 45% at 80 K 相似文献
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低压驱动薄膜电致发光特性及其机理的研究 总被引:1,自引:1,他引:0
采用低电阻率为Ta2O5/SiO2,Ta2O5/Al2O3复合层制备了出低压驱动Zns:Mn薄膜电致发光器件,它的阈值电压在40V以下,当驱动电压为60V,频率为50Hz,发光亮度在200cd/m^2以上,这种器件具有其独特的亮度-电压特性和电荷存储量-电压特性,利用空间电荷限制电流模型分析了发光层中空间电荷,电场强度在这种低压驱动电致发光器件发光层中的分布特性,并对低压驱动薄膜电致发光机理,亮度 相似文献
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Tadashi Kawazoe Motoichi Ohtsu 《Applied Physics A: Materials Science & Processing》2014,115(1):127-133
To fabricate a high-efficiency light emitting diode using indirect-transition-type bulk crystal SiC having a p–n homojunction structure, annealing was performed using stimulated emission via dressed photons generated at the inhomogeneous domain boundaries of Al dopant sites. This device emitted electroluminescence (EL) due to a two-step transition process via dressed-photon–phonons generated at the inhomogeneous domain boundaries of the Al dopant sites. The EL emission peak wavelength was 480–515 nm when the device was driven by a direct current and 390 nm when driven by a pulsed current. The external quantum efficiency of the EL emission was 1 %, and the internal quantum efficiency was as high as 10 %. 相似文献
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分子尺度上的光电相互作用研究可以为发展未来信息和能源技术提供科学基础.扫描隧道显微镜不仅可以用来观察和操纵纳米世界中的原子和分子,而且其高度局域化的隧穿电流还可以被用来激发隧道结中的分子,使之发光,以研究局域场下的分子光电特性.本文综述了中国科学技术大学单分子光电研究组近期在锌酞菁分子电致发光方面取得的科学进展,包括:1)利用有效的电子脱耦合与纳腔等离激元调控技术,实现了隧穿电子激发下的单个锌酞菁分子的电致荧光,并通过发展相关的光子发射统计测量方法,表征了单个分子在隧穿电子激发下的电致荧光具有单光子发射特性;2)发展了具有亚纳米空间分辨的荧光光谱成像技术,实现了对酞菁分子间相干偶极相互作用特征的实空间观察;3)对分子与纳腔等离激元之间的相干耦合作用进行了亚纳米精度的操控,在单分子水平上观察到了法诺共振和兰姆位移效应.这些研究结果不仅为研发基于有机分子的电泵纳米光源与单光子光源等分子光电器件提供了新的思路,而且为在单分子尺度上研究分子光电特性、分子间能量转移以及场与物质之间的相互作用规律等提供了新的表征方法. 相似文献
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有机薄膜的光致发光和电致发光 总被引:6,自引:3,他引:3
制备了以Alq3为发光物质的有机薄膜电致发光器件,得到了30V直流电压下100cd/m2的绿色发光.探讨了Alq3薄膜的光致发光和器件的电致发光机理. 相似文献
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通过在重掺硼硅(p+-Si)衬底上溅射SnO2薄膜并在O2气氛下800℃热处理形成SnO2/p+-Si异质结.基于该异质结的器件可在低电压(电流)驱动下电致发光.进一步地,通过在SnO2薄膜上增加TiO2盖层,使器件的电致发光获得显著增强.这是由于TiO2盖层的引入,一方面使SnO2薄膜更加致密,减少了非辐射复合中心;另一方面TiO2较大的折射率和合适的厚度使SnO2薄膜电致发光的出光效率得到提高. 相似文献
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基于发光二极管(Light-emitting Diode,LED)的电脉冲响应过程,建立了一个简便计算LED电脉冲响应模型。在此模型基础上研究了采用脉宽调制(Pulse-width Modulation,PWM)控制LED亮度时,由于LED响应延迟所导致的发光强度随占空比的非线性误差的变化情况,并进行了实验测试。结果表明:在PWM频率为2.5MHz时,LED发光强度与占空比的平均非线性误差为10%左右。最后,针对LED电脉冲响应模型,提出了显示屏像素亮度校正方法。该方法有效减小了由LED响应过程所造成的显示屏亮度控制误差,使得LED实际发光强度与所给亮度值近似成线性关系,从而减小了LED显示屏的色彩偏离,增强了显示效果。 相似文献
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利用溶胶-凝胶法(sol-gel method)制备了ZnO纳米颗粒薄膜(ZnO nanoparticle film),并以此为发光层制备了结构为ITO/ZnO nanoparticle/MEH-PPV/LiF/Al的电致发光器件.通过调整器件发光层厚度,对器件的发光光谱和电学特性进行测试研究,发现该器件在一定的直流电压下可以得到以ZnO近紫外(中心波长390 nm)发光为主的电致发光光谱,显示出较好的ZnO近紫外电致发光特性.对该器件的发光机理进行了一定的研究,认为该器件的发光是基于载流子隧穿. 相似文献
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Deang Liu Zheng Xu Shengyi Yang Shanyu Quan Qingfang He Yongsheng Wang Xurong Xu 《Solid State Communications》2006,137(7):391-394
The capacitance effect on ITO/poly[2-methoxy-5-[(2′-ethylhexyl)oxy]-p-phenylenevinylene] (MEH-PPV)/Al is studied by impedance spectroscopy technology, and the electroluminescence (EL) mechanism of this device driven by a sinusoidal alternating-current (AC) bias is suggested. By calculating the RC time constant of the device, we find that it is in good agreement with the lag-time between the EL and applied AC bias. Also, the influence of operating frequency on the EL intensity of the device is presented and it is concluded that a low operating frequency is good for a high device performance. 相似文献
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以巯基乙酸为稳定剂,在水溶液中制备了硒化镉(CdSe)纳米晶。用X射线光电子能谱(XPS)及其在水溶液中的紫外可见吸收光谱对其进行了表征。又以CdSe为发光材料制备了两种结构的电致发光器件,并对它们的光致发光和电致发光特性进行了研究。在两个器件的电致发光中都得到了CdSe纳米晶的发光,说明CdSe纳米晶是主要的发光中心而聚乙烯咔唑(PVK)只是空穴注入和传输的媒介。在电致发光光谱中还出现了一个不同于CdSe纳米晶和PVK的发光峰值,它是CdSe/BCP(2,9-二甲基-4,7-二苯基-1,10-菲咯啉)界面处的电致发光激基复合物的发光。 相似文献
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Photoluminescence and electroluminescence properties of ZnO films on p-type silicon wafers 下载免费PDF全文
A simplified n-ZnO/p-Si heterojunction has been prepared by growing
n-type ZnO rods on p-type silicon wafer through the chemical vapour
deposition method. The reflectance spectrum of the sample shows an
independent absorption peak at 384 nm, which may be originated from
the bound states at the junction. In the photoluminescence spectrum a
new emission band is shown at 393 nm, besides the bandedge emission
at 380 nm. The electroluminescence spectrum of the n-ZnO/p-Si
heterojunction shows a stable yellow luminescence band centred at 560
nm,which can be attributed to the emission from trapped states.
Another kind of discrete ZnO rod has also been prepared on such
silicon wafer and is encapsulated with carbonated polystyrene for
electroluminescence detection. This composite structure shows a weak
ultraviolet electroluminescence band at 395 nm and a yellow
electroluminescence band. These data prove that surface modification
which blocks the transverse movement of carriers between neighbouring
nanorods plays important roles in the ultraviolet emission of ZnO
nanorods. These findings are vital for future display device design. 相似文献
19.
C-藻蓝蛋白的电致发光 总被引:1,自引:1,他引:0
藻胆蛋白(phycobiliProteins)是藻类光合作用过程中最重要的拍光色素之一,它具有吸收太阳光能并将其高效地(几乎100%)转移到光合反应中心的功能[1].它在可见光区的吸收光谱主要归因于与脱辅基蛋白共价相连的线性四吡咯发色团[2]. 相似文献
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S. Prucnal J.M. Sun A. Nazarov I.P. Tjagulskii I.N. Osiyuk R. Fedaruk W. Skorupa 《Applied physics. B, Lasers and optics》2007,88(2):241-244
When amorphous silica is bombarded with energetic ions, various types of defects are created as a consequence of ion-solid
interaction (oxygen deficient centers (ODC), non-bridging oxygen hole centers (NBOHC), E′-centers, etc.). Luminescent peaks from oxygen deficiency centers at 2.7 eV, non-bridging oxygen hole centers at 1.9 eV and
defect centers with emission at 2.07 eV were observed by changing the concentration of implanted Gd3+ ions. Charge trapping in Gd-implanted SiO2 layers was induced using constant current electron injection to study the electroluminescence intensity with dependence on
the applied voltage change. The process of electron trap generation during high field carrier injection results in an increase
of the electroluminescence from non-bridging oxygen hole centers. Direct correlation between electron trapping and the quenching
of the electroluminescence at 2.07 eV and 2.7 eV was observed with variation of the implanted Gd concentration.
PACS 78.60.i; 72.20.Jv; 78.20.-e 相似文献