Non-equilibrium spin accumulation in ferromagnetic single-electron transistors

We study transport in ferromagnetic single-electron transistors. The non-equilibrium spin accumulation on the island caused by a finite current through the system is described by a generalized theory of the Coulomb blockade. It enhances the tunnel magnetoresistance and has a drastic effect on the time-dependent transport properties. A transient decay of the spin accumulation may reverse the electric current on time scales of the order of the spin-flip relaxation time. This can be used as an experimental signature of the non-equilibrium spin accumulation. Received 6 May 1998     

Poly-silicon quantum-dot single-electron transistors

Journal of the Korean Physical Society - For operation of a single-electron transistors (SETs) at room temperature, we proposed a fabrication method for a SET with a self-aligned quantum dot by...     

单电子晶体管通断图及其分析

通过研究单电子晶体管在电路中的静电能量的变化,得到了它的阻塞、导通情况与其两端偏压和控制栅压之间的关系,从而给出了它的通断图.并且发现单电子晶体管的对外特性主要由其对外的总电容决定;而单电子岛两个隧道结电容的不同主要反映在通断图上由隧道结电容所决定的晶体管阻塞、导通边界线上,这两条边界线同时也与外电路有关 关键词： 单电子晶体管 库仑阻塞 隧穿     

Spin-dependent quasiparticle transport in aluminum single-electron transistors

We investigate the effect of Zeeman splitting on quasiparticle transport in normal-superconducting-normal (NSN) aluminum single-electron transistors (SETs). In the above-gap transport, the interplay of Coulomb blockade and Zeeman splitting leads to spin-dependence of the sequential tunneling. This creates regimes where either one or both spin species can tunnel onto or off the island. At lower biases, spin-dependence of the single quasiparticle state is studied, and operation of the device as a bipolar spin filter is suggested.     

Spin accumulation and cotunneling effects in ferromagnetic single-electron transistors

Electron tunneling through small metallic particles (islands) coupled to two ferromagnetic electrodes is studied theoretically in the Coulomb blockade regime, where higher order tunneling processes play a significant role. Transport characteristics of the system are analyzed by the real-time diagrammatic technique. It is shown that the spin splitting of the electrochemical potential due to spin accumulation on the island should be detectable from the spacing between two resonances in the current–voltage characteristics.     

Kondo-peak splitting and coherent transport in a single-electron transistor

The peculiar behavior of Kondo-peak splitting under a magnetic field and bias can be explained by calculating the nonequilibrium retarded Green's function via the nonperturbative dynamical theory (NDT). In the NDT, the application of a lead-dot-lead system reveals that new resonant tunneling levels are activated near the Fermi level and the conventional Kondo peak at the Fermi level diminishes when a bias is applied. Magnetic field causes asymmetry in the spectral density and transforms the new resonant peak into a major peak whose behavior explains all the features of the nonequilibrium Kondo phenomenon. We also show the mechanism of coherent transport through the new resonant tunneling level.     

Kondo effect in bosonic spin liquids

In a metal, a magnetic impurity is fully screened by the conduction electrons at low temperature. In contrast, impurity moments coupled to spin-1 bulk bosons, such as triplet excitations in paramagnets, are only partially screened, even at the bulk quantum critical point. We argue that this difference is not due to the quantum statistics of the host particles but instead related to the structure of the impurity-host coupling, by demonstrating that frustrated magnets with bosonic spinon excitations can display a bosonic version of the Kondo effect. However, the Bose statistics of the bulk implies distinct behavior, such as a weak-coupling impurity quantum phase transition, and perfect screening for a range of impurity spin values. We discuss implications of our results for the compound Cs2CuCl4, as well as possible extensions to multicomponent bosonic gases.     

Vibrational sidebands and the Kondo effect in molecular transistors

Electron transport through molecular quantum dots coupled to a single vibrational mode is studied in the Kondo regime. We apply a generalized Schrieffer-Wolff transformation to determine the effective low-energy spin-spin-vibron interaction. From this model we calculate the nonlinear conductance and find Kondo sidebands located at bias voltages equal to multiples of the vibron frequency. Because of selection rules, the side peaks are found to have strong gate-voltage dependences, which can be tested experimentally. In the limit of weak electron-vibron coupling, we employ a perturbative renormalization group scheme to calculate analytically the nonlinear conductance.     

Giant fluctuations of superconducting order parameter in ferromagnet-superconductor single-electron transistors

Spin dependent transport in a ferromagnet-superconductor single-electron transistor is studied theoretically taking into account spin accumulation, spin relaxation, gap suppression, and charging effects. A strong dependence of the gap on the magnetic state of the electrodes is found, which gives rise to a magnetoresistance of up to 100%. We predict that fluctuations of the spin accumulation can play such an important role as to cause the island to fluctuate between the superconducting and normal states. Furthermore, the device exhibits a nearly complete gate-controlled spin-valve effect.     

Field-emission-induced electromigration method for the integration of single-electron transistors

We report a simple and easy method for the integration of planar-type single-electron transistors (SETs). This method is based on electromigration induced by a field emission current, which is so-called “activation”. The integration of two SETs was achieved by performing the activation to the series-connected initial nanogaps. In both simultaneously activated devices, current-voltage (I_D-V_D) curves displayed Coulomb blockade properties, and Coulomb blockade voltage was also obviously modulated by the gate voltage at 16 K. Moreover, the charging energy of both SETs was well controlled by the preset current in the activation.     

Proximity effect of electron beam lithography on single-electron transistors

A simple method, based on the proximity effect of electron beam lithography, alleviated by exposing various shapes in the pattern of incident electron exposures with various intensities, was applied to fabricate silicon point-contact devices. The drain current (I _d) of the device oscillates against gate voltage. The electrical characteristics of the single-electron transistor were observed to be consistent with the expected behavior of electron transport through gated quantum dots, up to 150 K. The dependence of the electrical characteristics on the dot size reveals that the I _d oscillation follows from the Coulomb blockade by poly-Si grains in the poly-Si dot. The method of fabrication of this device is completely compatible with complementary metal-oxide-semiconductor technology, raising the possibility of manufacturing large-scale integrated nanoelectronic systems.     

Impurity spin dynamics in the Kondo problem

We derive a system of coupled linear integral equations to determine the dynamical impurity spin susceptibility in the Kondo problem. It is shown that a high temperature solution of these equations is possible by an asymptotic expansion. This yields a Korringa width as one would expect from heuristic arguments.     

Measurements of transient magnetic fields on single-electron Ni-ions

Measurements were performed to determine the transient magnetic field assoclated with polarized is electrons of highly-stripped Ni ions traversing a ferromagnetic Fe layer. Partiele γ angular correlations and spin precessions have been measured with the first excited 2^↓-state in⁶²Ni. The observed precession indicates that the transient field is considerabls weaker than expected.     

Kondo effect and spin filtering in triangular artificial atoms

We studied, strongly correlated states in triangular artificial atoms. Symmetry-driven orbital degeneracy of the single particle states can give rise to an SU(4) Kondo state with entangled orbital and spin degrees of freedom, and a characteristic phase shift δ=π/4. Upon application of a Zeeman field, a purely orbital Kondo state is formed with somewhat smaller Kondo temperature and a fully polarized current through the device. The Kondo temperatures are in the measurable range. The triangular atom also provides a tool to systematically study the singlet-triplet transitions observed in recent experiments [Phys. Rev. Lett., 88 (2002) 126803, cond-mat/0208268 (2002)].     

T型耦合双量子点系统的非对等Kondo共振分裂传输

利用隶玻色子平均场近似理论,并借助于单杂质的Anderson模型的哈密顿量,研究了T型耦合双量子点嵌入正常电极的基态输运性质.结果表明：在体系处于平衡状态时,随着双量子点的耦合强度增加,体系的Kondo 效应被削弱. 当耦合强度足够强时,Kondo量子点态密度的Kondo共振单峰分裂成两个不对等的Kondo共振双峰.在体系处于非平衡状态时,增加两电极的偏压,态密度的Kondo分裂的非对等性明显加强. 关键词： Kondo效应 态密度 格林函数法 耦合双量子点     

Mesoscopic Kondo screening effect in a single-electron transistor embedded in a metallic ring.

We study the Kondo screening effect generated by a single-electron transistor or quantum dot embedded in a small metallic ring. When the ring circumference L becomes comparable to the fundamental length scale xi(0)(K) = Planck's constant over upsilon(F)/T(0)(K) associated with the bulk Kondo temperature, the Kondo resonance is strongly affected, depending on the total number of electrons (mod4) and magnetic flux threading the ring. The resulting Kondo-assisted persistent currents are also calculated in both Kondo and mixed-valence regimes, and the maximum values are found in the crossover region.     

Anisotropy of spin splitting and spin relaxation in lateral quantum dots

Inelastic spin relaxation and spin splitting epsilon(s) in lateral quantum dots are studied in the regime of strong in-plane magnetic field. Because of both the g-factor energy dependence and spin-orbit coupling, epsilon(s) demonstrates a substantial nonlinear magnetic field dependence similar to that observed by Hanson et al. [Phys. Rev. Lett. 91, 196802 (2003)]. It also varies with the in-plane orientation of the magnetic field due to crystalline anisotropy of the spin-orbit coupling. The spin relaxation rate is also anisotropic, the anisotropy increasing with the field. When the magnetic length is less than the "thickness" of the GaAs dot, the relaxation can be an order of magnitude faster for B ||[100] than for B || [110].     

Kondo anomaly of impurity spin resonance linewidth

Using the method of Baym and Kadanoff a kinetic equation is derived for the impurity susceptibility in thes-d model. Summing up the most important diagrams the impurity self-energy can be expressed in terms of Suhl'sT-matricest andτ. The contribution of the spin non flip amplitudet to the spin relaxation time is cancelled by a corresponding vertex correction. Thus the final result can be expressed in terms of the spin flip amplitudeτ alone which causes an anomalous temperature dependence of the relaxation time.