Self-catalytic ZnSe nanorods on grains synthesized using thermal evaporation method

In this paper, ZnSe nanorods grown on in-situ synthesized ZnSe grains are reported. The ZnSe products are synthesized through thermal evaporation of elementary materials of Zn and Se powders in a horizontal resistance furnace. It is interesting to note that the ZnSe nanorods of nearly the same diameter and length are obtained, and they grow in the same direction on a facet of the ZnSe grain. The ZnSe grains are random in shape, with well-defined bounded facets. The ZnSe grains can be synthesized in various growth conditions while the ZnSe nanorods can be synthesized on the ZnSe grains with the fulfillment of the Zn enriched condition. The growth of ZnSe nanorods can be described by the self-catalytic vapor–liquid–solid (VLS) mechanism. PACS 73.21.-b; 78.55.Et; 61.10.Nz; 61.46.+w; 68.65.-k     

Vertically aligned and hexagonal crystal ZnSe nanoribbon arrays on Zn substrates

The vertically aligned and hexagonal ZnSe nanoribbon array can be easily obtained by heating ZnSe: 0.38 en precursors (en = ethylenediamine), while ZnSe precursor nanoribbon arrays are grown directly on Zn foils in en using the solvothermal method. The nanoribbons are mostly about 4 nm in thickness, 100–300 nm in width, and 2 μm in length. The characteristics observed using scanning electron microscopy and X-ray diffraction indicate that the ZnSe precursor as well as ZnSe nanoribbons are vertically aligned on almost the whole zinc foil surface and form a large-scale uniform array. Particularly, ZnSe precursor nanoribbons are hybrid materials of ZnSe and en, while ZnSe nanoribbons are in the from of hexagonal structures. Possible growth mechanisms of the ZnSe precursor nanoribbon arrays are also proposed.     

Highly luminescent (ZnSe)ZnS core-shell quantum dots for blue to UV emission: synthesis and characterization

We synthesized nearly monodisperse bare ZnSe nanocrystallites having luminescence which ranges in wavelength from 340 to 430 nm via nucleation due to supersaturation and growth followed by size selective precipitation. Bare ZnSe dots' outermost surface is passivated with organic HDA/TOP. In order to enhance the radiative emission from the semiconductor nanocrystals, we capped the bare ZnSe quantum dots with ZnS semiconductor materials of a wider band gap and 5% of lattice mismatch and produced highly luminescent core-shell (ZnSe)ZnS quantum dots. The core-shell (ZnSe)ZnS nanocrystals show 20 times or more as greatly enhanced luminescence quantum yields as those of bare ZnSe nanocrystals. The ZnSe bare dots and the (ZnSe)ZnS core-shell dots have cubic zinc blende structures as expected from the bulk structure. The observed shapes of bare ZnSe and core-shell (ZnSe)ZnS dots are nearly spherical or ellipsoidal with the aspect ratios of 1.2 and 1.4, respectively. They are not faceted.     

真空中加热衬底对ZnSe MIS二极管电致发光的影响

本文研究了在制备ZnSe MIS二极管的绝缘层时,为了改善IS间的界面接触,在真空中加热ZnSe衬底,其结果虽然使电致发光的均匀性有所改善,却使原来的蓝色电致发光变为红色。文中着重研究了红色电致发光的起源,在液氮温度下出现的二个峰值为5350Å和6320Å的谱带应分别归结为ZnSe晶体中的铜绿(Cu-G)和铜红(Cu-R)发光中心。文中指出,真空中加热的条件,使ZnSe晶体中残留的Cu杂质从非发光中心状态转变为发光中心状态。因此,要改善ZnSe晶体蓝色电致发光的性能,进一步提高ZnSe晶体的纯度是十分重要的。     

气相外延ZnSe单晶薄膜的蓝色电致发光

本文在300℃—700℃温度范围内,在GaAs衬底上气相外延生长了ZnSe单晶薄膜。讨论了衬底温度对外延层电学性质及光学特性的影响。ZnSe外延层经Zn气氛热处理后,发光特性大为改善。用处理后的ZnSe外延膜做成MIS发光二极管,首次得到了室温下气相外延ZnSe单晶薄膜的蓝色电致发光。     

高掺杂Ga对ZnSe:Ga,Cu晶体中深中心发射的影响

本文研究了高掺杂Ga对ZnSe:Ga,Cu晶体中深中心光致发光谱带的影响。首次在高掺杂ZnSe:Ga,Cu中观察到了Cu-G带峰值位置随Ga浓度增大向长波方向移动的现象,并把它归因于高浓度的Ga和Cu相互作用,产生了谱峰为5580Å的新发射带,其半高宽(FWHM)大于Cu-G谱带的半高宽。此外还得到,随着Cu浓度增加,Cu-G带与Cu-R带强度之比减小。文中指出,Ga浓度较低时,ZnSe:Ga,Cu晶体与ZnSe:Cu晶体有相同的Cu深中心发射规律,即随着Cu浓度增大,Cu-G带与Cu-R带的强度比增大,由Cu-R发射带占优势逐渐过渡到Cu-G发射带占优势。     

基于ZnSe/Ag/ZnSe可见区透明导电薄膜

利用红外光学材料ZnSe和金属Ag在室温下采用电子束蒸发镀膜技术研制了透明导电薄膜ZnSe/Ag/ZnSe,该薄膜的电子浓度为1.208×1020 cm－3,电子迁移率和电阻率分别为17.22 cm2 V－1 s－1和2.867×10－5 Ω·cm,功函数达到5.13 eV,在可见区的平均透过率理论模拟值超过80%,而测量结果为63.8%,测量的最高透过率为83%.结果表明,该透明导电薄膜具有良好的光学和电学性能,可作为透明电极应用于发光二极管等光电子器件中.     

基于ZnSe的有机-无机异质结电致发光器件

以电子束蒸发的方法制备硒化锌(ZnSe)薄膜，研究了基于ZnSe的有机-无机异质结电致发光器件.在双层器件ITO/ZnSe(50nm)/Alq₃(12nm)/Al中看到了峰值位于578nm的ZnSe电致发光，却很难得到单层器件ITO/ZnSe(50—120nm)/Al的电致发光；在此基础上进一步引入有机空穴传输层(HTL)，通过改变器件的结构，讨论了ZnSe对有机-无机异质结器件ITO/HTL/ZnSe/Alq₃/Al电致发光特性的影响.其电致发光光谱的研究结果证实了ZnSe在器件中的作用：ZnSe既起传输电子的作用，也起到传输空穴的作用，还作为发光层.并对ZnSe的发光机理进行了讨论. 关键词： 硒化锌 有机-无机异质结 电致发光 空穴传输层     

Aqueous synthesis of Cu-doped ZnSe quantum dots

In this paper, we described a simple growth-doping approach for aqueous synthesis of Cu-doped ZnSe quantum dots (Cu:ZnSe d-dots) with mercaptopropionic acid as stabilizer. The influences of the ratios of precursors and the concentration of Cu dopant ions on Cu:ZnSe d-dots synthesis were studied in detail in this study. The Cu dopant ions had significant influence on the optical properties of ZnSe d-dots. The bandgap emission of ZnSe was effectively restrained through Cu doping. The prolonged reflux facilitates the doping of Cu, which led to the red-shift of the emission of Cu:ZnSe d-dots from 465 to 495 nm. The stable Cu:ZnSe d-dots with high quality can be obtained under optimal conditions. As compared with cadmium-based nanocrystals synthesized in aqueous solution, Cu:ZnSe d-dots have much lower toxicity, indicating that they can be applied as outstanding fluorescent labels for biological assays, imaging of cells and tissues, even in vivo investigations.     

CdSe/ZnSe/ZnS多壳层结构量子点的制备与表征

展示了一种简捷的多壳层量子点合成路线。在含有过量Se源的CdSe体系中直接注入Zn源,"一步法"合成了CdSe/ZnSe量子点;进一步以CdSe/ZnSe为"核",表面外延生长ZnS壳层制备了核/壳/壳结构CdSe/ZnSe/ZnS量子点。相对于以往报道的多壳层结构量子点的制备方法,该方法通过减少壳层的生长步骤有效地简化了实验操作,缩短了实验周期,同时减少对原料的损耗。对量子点进行高温退火处理,能够大幅提高CdSe/ZnSe/ZnS量子点的发光量子产率。透射电镜、XRD以及光谱研究表明:所制备的量子点接近球形,核与壳层纳米晶均为闪锌矿结构,最终获得的CdSe/ZnSe/ZnS量子点的光致发光量子产率达到53％。为了实现量子点的表面生物功能化,通过巯基酸进行了表面配体交换修饰,使量子点表面具有水溶性的羧基功能团,并且能够维持较高的光致发光量子产率。     

ZnSe/SiO2复合薄膜光学常数与荧光光谱的研究

采用溶胶-凝胶工艺与原位生长技术，制备了ZnSe/SiO₂复合薄膜.X射线衍射分 析表明薄膜中ZnSe晶体呈立方闪锌矿结构.X射线荧光分析结果显示薄膜中Zn与Se摩尔比为1 ∶1.01—1∶1.19.利用场发射扫描电子显微镜观察了复合薄膜的表面形貌，结果表明复合薄 膜表面既存在尺寸约为400nm的ZnSe晶粒，也存在尺寸小于100nm的ZnSe晶粒.利用椭偏仪测 量了薄膜椭偏角Ψ，Δ与波长λ的关系，采用Maxwell-Garnett有效介质理论对薄膜的光学 常数、厚度、气孔率、ZnS 关键词： 2复合薄膜')" href="#">ZnSe/SiO₂复合薄膜 光学性质 椭偏光度法 荧光光谱     

氧化石墨烯/硒化锌纳米光电材料的制备及其蓝光发射特性

采用一种简单有效的原位水热合成方法,使用石墨烯氧化物（GO）作为反应物和晶体生长基底成功制备出了还原氧化石墨烯/硒化锌（r-GO/ZnSe）纳米复合材料。采用X射线粉末衍射（XRD）、透射电子显微镜（TEM）、高分辨透射电镜（HRTEM）以及红外-可见光谱（FT-IR）等方法对r-GO/ZnSe纳米复合材料进行了检测。结果表明,平均粒径在30 nm的立方闪锌矿晶体结构的ZnSe粒子均匀分散在氧化石墨烯片层上,构成纳米复合结构。 UV-Vis光谱显示,纳米复合材料的光学吸收的起始波长在445 nm附近。PL光谱显示,纳米复合材料在470 nm附近存在一个很强的发射峰。这种石墨烯基纳米复合材料在白光二极管领域中有重要的应用价值。     

Effects of the ZnSe concentration on the structural and optical properties of ZnSe/PVA nanocomposite thin film

This study investigated the effects of ZnSe nanoparticles (NPs) on the structural and (linear and nonlinear) optical properties of polyvinyl alcohol (PVA) thin film. Three samples of ZnSe NP-doped PVA thin films with different concentrations of ZnSe were produced on a glass substrate. The ZnSe NPs were synthesized by pulsed laser ablation of the ZnSe bulk target immersed in distilled water using a 1064 nm wavelength and a high frequency pulsed Nd:YAG laser. The optical bandgap energies of the films were extracted from their UV-Vis-NIR absorption spectra. The corresponding energy bandgaps of the nanocomposite films declined as the ZnSe NPs doping concentration increased. X-ray diffraction analysis was used to characterize the crystalline phases of the ZnSe/PVA nanocomposite films. The concentration-dependent nonlinear optical absorption and nonlinear refraction behaviors of the films after exposure to 532-nm nanosecond laser pulses were investigated using the Z-scan technique. The nonlinear absorption response of the films was positive when measured using an open aperture scheme, which was attributed to the two-photon absorption mechanism. In addition, the nonlinear refraction indices had a negative value and they increased as the concentration of ZnSe NPs in the films increased.     

Determination of L-tyrosine Based on Luminescence Quenching of Mn-Doped ZnSe Quantum Dots in Enzyme Catalysis System

In this paper, we attempted to develop a novel application of Mn-doped ZnSe quantum dots (Mn: ZnSe d-dots) as probes to detect L-tyrosine (L-Tyr). The bio-conjugates of horseradish peroxidase (HRP)-conjugated Mn: ZnSe d-dots were used in the enzyme catalyzed reaction of L-Tyr with H₂O_2. Compared with traditional CdTe QDs, Mn: ZnSe d-dots have better biocompatibility and less negative impact on enzyme catalyzed system. In HRP-conjugated Mn: ZnSe-L-Tyr-H₂O₂ system, electron transfer occurred between Mn: ZnSe d-dots and HRP. It resulted in the luminescence quenching of the Mn: ZnSe d-dots., which can be used to detect L-Tyr. The coupling of efficient quenching of Mn: ZnSe d-dots photoluminescence (PL) and the effective enzyme-catalysis can afford a simple and sensitive method for L-Tyr detection. The Mn: ZnSe d-dots-enzyme catalyzed system displays great potential in the development of enzyme-based biosensing systems for various analytes.     

Spectroscopic studies on the interaction between ZnSe nanoparticles with bovine serum albumin

The interaction between ZnSe nanoparticles (NPs) and bovine serum albumin (BSA) was studied by UV–vis, fluorescence spectroscopic techniques. The results showed that the fluorescence of BSA was strongly quenched by ZnSe NPs and the quenching mechanism was discussed to be a static quenching procedure, which was proved by quenching constant (K_q). The recorded UV–vis data and the fluorescence data quenching by the ZnSe NPs showed that the interaction between them leads to the formation of ZnSe–BSA complex. Based on the synchronous fluorescence spectra, it was established that the conformational change of BSA was induced by the interaction of ZnSe with the tyrosine micro-region of the BSA molecules. Furthermore, the temperature effects on the structural and spectroscopic properties of individual ZnSe NPs and protein and their bioconjugates (ZnSe–BSA) were also researched. It was found that, compared to the monotonic decrease of the individual ZnSe NPs fluorescence intensity, the temperature dependence of the ZnSe–BSA emission had a much more complex behavior, which was highly sensitive to the conformational changes of the protein.     

双层介电系统的Raman散射——ZnSe/玻璃和ZnSe/GaAs的表面声子模

本文实验观测了双层介电系统ZnSe/玻璃和ZnSe/GaAs的表面声子模,并利用极化场边界条件对上述体系的表面声子频率进行了计算。实验结果与计算结果符合得比较满意。     

基于MEH-PPV/ZnSe纳米复合器件的电致发光特性的研究

以巯基乙酸作为稳定剂在水相中制备了ZnSe纳米晶,用X射线粉末衍射(XRD)和X射线光电子能谱(XPS)对其进行了表征。用表面活性剂将ZnSe纳米晶从水相中转移到有机相中,使其与聚合物MEH-PPV复合作为发光层,制备了多层电致发光器件Glass/ITO/MEH-PPV∶ZnSe/BCP/Alq₃。对ZnSe纳米晶和MEH-PPV薄膜的光致发光谱及其吸收光谱的比较表明ZnSe纳米晶和MEH-PPV之间存在着能量传递,这是导致纳米复合薄膜的光致发光光谱和电致发光光谱存在差异的原因之一。文章对其在光激发和载流子注入条件下的不同发光机制进行了讨论。通过对器件的光电特性进行研究,发现ZnSe纳米晶发光的比例随着外加电压的增加而增加,而且器件的I-V特性基本上符合二极管的特性。     

Lattice instability induced by 3<Emphasis Type="Italic">d</Emphasis> impurities in a zinc selenide crystal

It was experimentally shown that, in a 3d-impurity-doped ZnSe crystal with the zinc blende structure, nanosized ionic shear displacements of the trigonal (ZnSe : Ni, ZnSe : V) and tetragonal (ZnSe : Cr) types arise at temperatures of 300 and 120 K. As the temperature decreases in the range 100.0–4.2 K, the shear elastic moduli C ₄₄ (ZnSe : Ni) and (C ₁₁–C ₁₂)/2 (ZnSe : Cr) are softened owing to the 3d impurities. A new peak at a frequency of 90 cm^?1 appears in the Raman scattering spectrum of ZnSe : Ni at 5 and 20 K.     

Picosecond carrier relaxation in type-II ZnSe/BeTe heterostructures

Relaxation of photoexcited carriers in the course of the formation of spatially separated layers of electrons and holes in type-II ZnSe/BeTe heterostructures has been studied based on a high time resolution investigation of fast luminescence kinetics. The hole escape times τ from the ZnSe layer have been measured in structures with different ZnSe layer thicknesses (τ = 2.5, 7.5, and 23 ps for thicknesses d = 10, 15, and 20 nm, respectively). It is shown that the increase in the time τ can be explained by the fact that the escape rate of photoexcited holes from the lowest above-barrier level in the ZnSe layer into the BeTe layer decreases as the thickness of the ZnSe layer increases.     

Acoustic,optical, and interface phonons in BeTe/ZnSe superlattices

Raman scattering in a number of BeTe/ZnSe type-II superlattices which share no common cations or anions in the interfaces was studied. Folded acoustic phonons; LO phonons of the first, second, and third order in the ZnSe layers; and Kliewer-Fuchs-type electrostatic interface phonons were observed when excited in resonance with the direct exciton transition in the ZnSe layers. Nonresonant excitation produced LO phonons in the ZnSe and BeTe layers and a high-frequency mechanical interface mode, assigned tentatively to a local vibration of the interface Be-Se bond.