100 keV H+ ion irradiation of as‐deposited Al‐doped ZnO thin films: An interest in tailoring surface morphology for sensor applications

We report the influence of 100 keV H⁺ ion beam irradiation on the surface morphology, crystalline structure, and transport properties of as‐deposited Al‐doped ZnO (Al:ZnO) thin films. The films were deposited on silicon (Si) substrate by using DC sputtering technique. The ion irradiation was carried out at various fluences ranging from 1.0 × 10¹² to 3.0 × 10¹⁴ ions/cm². The virgin and ion‐irradiated films were characterized by X‐ray diffraction, Raman spectroscopy, atomic force microscopy, and Hall probe measurements. Using X‐ray diffraction spectra, 5 points Williamson‐Hall plots were drawn to deduce the crystallite site and strain in Al:ZnO films. The analysis of the measurements shows that the films are almost radiation resistant in the structural deformation under chosen irradiation conditions. With beam irradiation, the transport properties of the films are also preserved (do not vary orders of magnitude). However, the surface roughness and the crystallite size, which are crucial parameters of the ZnO film as a gas sensor, are at variation with the ion fluence. As ion fluence increases, the root‐mean‐square surface roughness oscillates and the surface undergoes for smoothening with irradiation at chosen highest fluence. The crystallite size decreases initially, increases for intermediate fluences, and drops almost to the value of the pristine film at highest fluence. In the paper, these interesting experimental results are discussed in correlations with ion‐matter interactions especially energy losses by the ion beam in the material.     

Ion induced controlled modifications in structural and optical properties of indium oxide thin films – studies with 25‐keV Co− and N+ beam implantations

Two sets of indium oxide thin films (~150 nm) grown on quartz substrates using thermal evaporation technique were processed separately with 25‐keV Co^? and N⁺ ions with several fluences ranging from 1.0 × 10¹⁵ to 1.0 × 10¹⁶ ions/cm². The pristine and the ion implanted films were characterized by Rutherford backscattering spectroscopy (RBS), X‐ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV–Vis spectrometry. The RBS spectra reveal signature of only cobalt and nitrogen in accordance to their fluences confirming absence of any contamination arising due to ion implantation. An increase in the average crystallite size (from 13.7 to 15.3 nm) of Co^? ions implanted films was confirmed by XRD. On the other hand, the films implanted with N⁺ ions showed a decrease in the average crystallite size from 20.1 to 13.7 nm. The XRD results were further verified by SEM micrographs. As seen in AFM images, the RMS surface roughness of the samples processed by both ion beams was found to decrease a bit (29.4 to 22.2 nm in Co^? implanted samples and 24.2 to 23.3 nm in N⁺ implanted samples) with increasing fluence. The Tauc's plot deduced from UV–visible spectroscopy showed that the band gap decreases from 3.54 to 3.27 eV in Co^? implanted films and increases from 3.38 to 3.58 eV for films implanted with N⁺ ions. The experimental results suggest that the modifications in structural and optical properties of indium oxide films can be controlled by optimizing the implantation conditions. Copyright © 2017 John Wiley & Sons, Ltd.     

Effects of UV irradiation on tribological properties of nano‐TiO2 thin films

One‐layer and two‐layer nano‐TiO₂ thin films were prepared on the surface of common glass by sol–gel processing. Water contact angle, surface morphology, tribological properties of the films before and after ultraviolet (UV) irradiation were investigated using DSA100 drop shape analyzer, scanning probe microscopy (SPM), SEM and universal micro‐materials tester (second generation) (UMT‐2MT) friction and wear tester, respectively. The stored films markedly resumed their hydrophilicity after UV irradiation. But UV irradiation worsened tribological properties of the films. After the film was irradiated by UV, the friction coefficient between the film and GCr15 steel ball increased about 10–50% and its wear life shortened about 20–90%. Abrasive wear, brittle break and adherence wear are the failure mechanisms of nano‐TiO₂ thin films. It was believed that UV irradiation increased surface energy of the film and then aggravated adherence wear of the film at initial stage of friction process leading to severe brittle fracture and abrasive wear. Copyright © 2009 John Wiley & Sons, Ltd.     

Ion‐beam‐induced morphology on the surface of thin polymer films at low current density and high ion fluence

The effect of Xe⁺ bombardment on the surface morphology of four different polymers, polystyrene (PS), poly(phenylene oxide), polyisobutylene, and polydimethylsiloxane, was investigated in ion energy and fluence ranges of interest for secondary ion mass spectrometry depth‐profiling analysis. Atomic force microscopy (AFM) was applied to analyze the surface topography of pristine and irradiated polymers. AFM analyses of nonirradiated polymer films showed a feature‐free surface with different smoothness. We studied the influence of different Xe⁺ beam parameters, including the incidence angle, ion energy (660–4000 eV), current density (0.5 × 10² to 8.7 × 10² nA/cm²), and ion fluence (4 × 10¹⁴ to 2 × 10¹⁷ ion/cm²). Xe⁺ bombardment of PS with 3–4 keV at a high current density did not induce any change in the surface morphology. Similarly, for ion irradiation with lower energy, no surface morphology change was found with a current density higher than 2.6 × 10² nA/cm² and an ion fluence up to 4 × 10¹⁶ ion/cm². However, Xe⁺ irradiation with a lower current density and a higher ion fluence led to topography development for all of the polymers. The roughness of the polymer surface increased, and well‐defined patterns appeared. The surface roughness increased with ion irradiation fluence and with the decrease of the current density. A pattern orientation along the beam direction was visible for inclined incidence between 15° and 45° with respect to the surface normal. Orientation was not seen at normal incidence. The surface topography development could be explained on the basis of the balance between surface damage and sputtering induced by the primary ion beam and redeposition–adsorption from the gas phase. Time‐of‐flight secondary ion mass spectrometry analyses of irradiated PS showed strong surface modifications of the molecular structure and the presence of new material. © 2000 John Wiley & Sons, Inc. J Polym Sci B: Polym Phys 39: 314–325, 2001     

Medium energy,heavy and inert ion irradiation of metallic thin films: studies of surface nano‐structuring and metal burrowing

In context to the ion induced surface nanostructuring of metals and their burrowing in the substrates, we report the influence of Xe and Kr ion‐irradiation on Pt:Si and Ag:Si thin films of ~5‐nm thickness. For the irradiation of thin films, several ion energies (275 and 350 keV of Kr; 450 and 700 keV of Xe) were chosen to maintain a constant ratio of the nuclear energy loss to the electronic energy loss (S_n/S_e) in Pt and Ag films (five in present studies). The ion‐fluence was varied from 1.0 × 10¹⁵ to 1.0 × 10¹⁷ ions/cm². The irradiated films were characterized using Rutherford backscattering spectroscopy (RBS), atomic force microscopy (AFM) and scanning electron microscopy (SEM). The AFM and SEM images show ion beam induced systematic surface nano‐structuring of thin films. The surface nano‐structures evolve with the ion fluence. The RBS spectra show fluence dependent burrowing of Pt and Ag in Si upon the irradiation of both ion beams. At highest fluence, the depth of metal burrowing in Si for all irradiation conditions remains almost constant confirming the synergistic effect of energy losses by the ion beams. The RBS analysis also shows quite large sputtering of thin films bombarded with ion beams. The sputtering yield varied from 54% to 62% by irradiating the thin films with Xe and Kr ions of chosen energies at highest ion fluence. In the paper, we present the experimental results and discuss the ion induced surface nano‐structuring of Pt and Ag and their burrowing in Si. Copyright © 2016 John Wiley & Sons, Ltd.     

H3PW12O40@nano‐ZnO: An efficient,recyclable, and eco‐friendly catalyst for the green synthesis of novel benzo[a]pyrimido[5′,4′:5,6]pyrano[2,3‐c]phenazines via sequential multicomponent reactions under microwave irradiation

A simple, efficient, single‐pot synthesis of novel heteroaryl‐substituted benzo[a]pyrimido[5′,4′:5,6]pyrano[2,3‐c]phenazines has been developed via initial Knoevenagel, subsequent Michael, and final heterocyclization reactions of 2‐hydroxynaphthalene‐1,4‐dione, o‐phenylenediamine, aromatic aldehydes, and barbituric acid in the presence of H₃PW₁₂O₄₀@nano‐ZnO as a recyclable heterogeneous catalyst in EtOH under microwave irradiation (MWI). This sequential green process with several advantages, such as operational simplicity, high yield, low cost, easy handling, eco‐friendliness and reusability of the catalyst, absence of any tedious work‐up or purification, and avoidance of hazardous or toxic reagents/catalysts/solvents, opens an effective and convenient way to pyrano‐functionalized benzophenazine systems, which are promising compounds for different biomedical applications.