Studies of Cu‐doped ZnS thin films prepared by sputtering technique

Radio frequency magnetron sputtering technique has been used to deposit Cu‐doped ZnS thin films on glass and n‐type Si(100) substrates at room temperature. Crystalline structure, surface morphology, and elemental oxidation states have been studied by X‐ray diffraction, field emission scanning electron microscopy, atomic force microscopy, and X‐ray photoelectron spectroscopy. Ultraviolet–visible spectroscopy has been employed to measure the transmittance, reflectance, and absorbance properties of coated films. The deposited thin films crystallize in zinc blende or sphalerite phases as proved by X‐ray diffraction analysis. The intensity of diffraction peaks decreases with increasing the dopant concentrations. The predominant diffraction peak related to (111) plane of ZnS is observed at 28.52° along with other peaks. The peak positions are shifted to higher angles with an increase of Cu concentrations. X‐ray photoelectron spectroscopy studies show that Cu is present in +1 oxidation state. Transmittance, reflectance, and absorbance properties of the deposited films have a slight variation with dopant concentrations. Copyright © 2016 John Wiley & Sons, Ltd.     

Hybrid ZnO/polymer thin films prepared by RF magnetron sputtering

Zinc oxide/poly(acrylic acid) (ZnO/PAA) multilayered hybrid films with different layer thicknesses were prepared by radio frequency magnetron sputtering. Zinc peroxide was used as precursor materials for the preparation of ZnO layers, since the zinc peroxide decomposes to ZnO during the film deposition. The films have a high transmittance in the visible region and exhibit visible photoluminescence emission. The band gap energy of the films—determined by the Tauc relationship—decreases with increasing layer thickness (3.40–3.36 eV) due to the increasing crystalline size of the ZnO particles. The morphological investigations showed that a real layered hybrid film structure formed.     

Dielectric properties of tetragonal tungsten bronze films deposited by RF magnetron sputtering

Tetragonal tungsten bronze (TTB) films have been synthesised on Pt(111)/TiO₂/SiO₂/Si substrates from Ba₂LnFeNb₄O₁₅ ceramics (Ln = La, Nd, Eu) by RF magnetron sputtering. X-ray diffraction measurements evidenced the multi-oriented nature of films with some degrees of preferential orientation along (111). The dependence of the dielectric properties on temperature and frequency has been investigated. The dielectric properties of the films are similar to those of the bulk, i.e., ε ∼150 and σ ∼10⁻⁶ Ω⁻¹ cm⁻¹ at 1 MHz and room temperature. The films exhibit two dielectric anomalies which are attributed to Maxwell Wagner polarization mechanism and relaxor behaviour. Both anomalies are sensitive to post-annealing under oxygen atmosphere and their activation energies are similar E_a ∼0.30 eV. They are explained in terms of electrically heterogeneous contributions in the films.     

Synthesis of self-assembled nanorod vanadium oxide bundles by sonochemical treatment

Self-assembled nanorod of vanadium oxide bundles were synthesized by treating bulk V₂O₅ with high intensity sonochemical technique. The synthesized materials were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM) and temperature-programmed reduction (TPR) in H₂. Catalytic behaviour of the materials over anaerobic n-butane oxidation was studied through temperature-programmed reaction (TPRn). Catalytic evaluation of the sonochemical treated V₂O₅ products was also studied on microreactor. XRD patterns of all the vanadium samples were perfectly indexed to V₂O₅. The morphologies of the nanorod vanadium oxides as shown in SEM and TEM depended on the duration of the ultrasound irradiation. Prolonging the ultrasound irradiation duration resulted in materials with uniform, well defined shapes and surface structures and smaller size of nanorod vanadium oxide bundles. H₂-TPR profiles showed that larger amount of oxygen species were removed from the nanorod V₂O₅ compared to the bulk. Furthermore, the nanorod vanadium oxide bundles, which were produced after 90, 120 and 180 min of sonochemical treatment, showed an additional reduction peak at lower temperature (850 K), suggesting the presence of some highly active oxygen species. TPRn in n-butane/He over these materials showed that the nanorod V₂O₅ with highly active oxygen species showed markedly higher activity than the bulk material, which was further proven by catalytic oxidation of n-butane.     

Thin films of vanadium oxide grown on vanadium metal: oxidation conditions to produce V2O5 films for Li‐intercalation applications and characterisation by XPS,AFM, RBS/NRA

Thin films of vanadium oxide were grown on vanadium metal surfaces (i) in air at ambient conditions, (ii) in 5 mM H₂SO₄ (aq), pH 3, (iii) by thermal oxidation at low oxygen pressure (10^?5 mbar) at temperatures between 350 and 550 °C and (iv) at near‐atmospheric oxygen pressure (750 mbar) at 500 °C. The oxide films were investigated by atomic force microscopy (AFM), X‐ray photoelectron spectroscopy (XPS), X‐Ray diffraction (XRD) and Rutherford backscattering spectrometry (RBS) and nuclear reaction analysis (NRA). The lithium intercalation properties were studied by cyclic voltammetry (CV). The results show that the oxide films formed in air at room temperature (RT), in acidic aqueous solution, and at low oxygen pressure at elevated temperatures are composed of V₂O₃. In air and in aqueous solution at RT, the oxide films are ultra‐thin and hydroxylated. At 500 °C, nearly atmospheric oxygen pressure is required to form crystalline V₂O₅ films. The oxide films grown at pO₂ = 750 mbar for 5 min are about 260‐nm thick, and consist of a 115‐nm outer layer of crystalline V₂O₅. The inner oxide is mainly composed of VO₂. For all high temperature oxidations, the oxygen diffusion from the oxide film into the metal matrix was considerable. The oxygen saturation of the metal at 450 °C was found, by XPS, to be 27 at.% at the oxide/metal interface. The well‐crystallized V₂O₅ film, formed by oxidation for 5 min at 500 °C and 750 mbar O₂, was shown to have good lithium intercalation properties and is a promising candidate as electrode material in lithium batteries. Copyright © 2005 John Wiley & Sons, Ltd.     

Electrochromic nickel oxide films made by reactive r.f. sputtering from different targets

We describe the preparation and optical–electrical characterization of thin electrochromic layers based on nickel oxide (NiO_x). These layers were deposited by reactive radiofrequency (r.f.) sputtering from nickel or nickel oxide targets, maintaining the r.f. power and varying the oxygen flow in a gas mixture of Ar and O₂ from 5% up to 30%. The Ni/O ratio in the deposited thin films was determined by Rutherford backscattering spectroscopy (RBS) and the microstructure was investigated by x‐ray diffraction. The deposition rate was found to be strongly dependent on the type of target used. The electrochromic behaviour in aqueous alkaline electrolyte (0.1 N KOH solution) was investigated by electrochemical cyclization. Samples deposited by the NiO target exhibited the lowest N/O ratio (0.5) and the highest value of intercalated charge (～4.9 × 10^?2 mC cm^?2 nm^?1). Among the same samples the highest value of the intercalated charge was found for those deposited at low oxygen flow, but these samples exhibit the smallest reversible changes in optical absorption in the wavelength range 330–1200 nm. Samples deposited by the nickel target do not exhibit significant variations in the value of the exchanged charge; the measured Ni/O ratio indicates a stoichiometry closer to NiO. We also observed the switching behaviour by analysing the films in cyclic time mode at a fixed wavelength. The commutation response time is estimated by measurement under the application of a step waveform potential. Copyright © 2004 John Wiley & Sons, Ltd.     

Properties of ITO films prepared by reactive magnetron sputtering

Indium tin oxide (ITO) thin films were deposited by mid frequency pulsed dual magnetron sputtering using a metallic alloy target with 10 wt.% tin in an atmosphere of argon and oxygen. The aim of the work was to study the interdependence of structural, electrical and optical properties of ITO films deposited in the reactive and transition target mode, respectively. The deposition rate in the transition mode exceeds the deposition rate in the reactive mode by a factor of six, a maximum value of 100 nm·m min⁻¹ could be achieved. This corresponds to a static deposition rate of 200 nm min⁻¹. The lowest electrical resistivity of 1.1·10⁻³ Ω cm was measured at samples deposited in the high oxygen flow range in the transition mode. The samples show a good transparency in the visible range corresponding to extinction coefficients being below 10⁻². X-ray diffraction was used to characterise crystalline structure as well as film stress. ITO films prepared in the transition mode show a slightly preferred orientation in (211) direction, whereas films deposited in the reactive mode are strongly (222) oriented. Compared to undoped In₂O₃ all samples have an enlarged lattice. The lattice strain perpendicular to the surface is about 0.8% and 2.0% for films grown in the transition and the reactive mode, respectively. Deposition in the transition mode introduces a biaxial film stress in the range of −300 MPa, while stress in reactive mode samples is −1500 MPa.     

Substrate temperature effects on the structural,compositional, and electrical properties of VO2 thin films deposited by pulsed laser deposition

The vanadium dioxide (VO₂) thin films were deposited on silicon (100) substrate using the pulsed laser deposition technique. The thin films were deposited at different substrate temperatures (500°C, 600°C, 700°C, and 800°C) while keeping all the other parameters constant. X‐ray diffraction confirmed the crystalline VO₂ (B) and VO₂ (M) phase formation at different substrate temperatures. X‐ray photoelectron spectroscopy analysis showed the presence of V⁴⁺ and V⁵⁺ charge states in all the deposited thin films which confirms that the deposited films mainly consist of VO₂ and V₂O₅. An increase in the VO₂/V₂O₅ ratio has been observed in the films deposited at higher substrate temperatures (700°C and 800°C). Scanning electron microscope micrographs revealed different surface morphologies of the thin films deposited at different substrate temperatures. The electrical properties showed the sharp semiconductor to metal transition behavior with approximately 2 orders of magnitude for the VO₂ thin film deposited at 800°C. The transition temperature for heating and cooling cycles as low as 46.2°C and 42°C, respectively, has been observed which is related to the smaller difference in the interplanar spacing between the as‐deposited thin film and the standard rutile VO₂ as well as to the lattice strain of approximately −1.2%.     

Influence of oxygen flow rate on the surface chemistry and morphology of radio frequency (RF) magnetron sputtered zinc oxide thin films

Zinc oxide thin films were deposited, by radio frequency magnetron sputtering, on heated and unheated substrates. The oxygen flow rate was varied during deposition, and its effects on the structural and chemical properties of the films were investigated. The films had oriented c‐axis growth with nano‐crystallite size. Their surfaces manifested columnar microstructure, with a surface roughness that was suppressed by the introduction of oxygen. Chemical analysis showed that deposition under an oxygen atmosphere resulted in substantial reduction of oxygen vacancies, with a corresponding incorporation of chemisorbed species. Copyright © 2013 John Wiley & Sons, Ltd.     

Comparative study on structure and properties of titanium/silicon mono‐ and co‐doped amorphous carbon films deposited by mid‐frequency magnetron sputtering

The titanium/silicon mono‐ and co‐doped amorphous carbon films were deposited by mid‐frequency magnetron sputtering Ti target, Si target, and Ti80S20 alloy target, respectively. The effects of doped elements on the composition, surface morphology, microstructure, and mechanical and tribological properties of the films were investigated. The results reveal that the ratio of sp³ and sp² carbon bonds of the films is regulated between 0.28 and 0.62 by a combination of Ti and Si dopant. The addition of small amounts of silicon leads to an increase in sp³ bonds and disorder degree of the sp² carbon. The co‐doped film exhibits significantly superior friction performance than the mono‐doped films. The ultra‐low friction (μ < 0.01) was achieved under a load of 2 N in ambient air with 40% RH. By comparing to the mono‐and co‐doped films, it is thought that the sp³/sp² ratio of the films may play a key role for the superlow friction. Copyright © 2013 John Wiley & Sons, Ltd.     

In-situ UV-Raman study on soot combustion over TiO_2 or ZrO_2-supported vanadium oxide catalysts

UV-Raman spectroscopy was used to study the molecular structures of TiO2 or ZrO2-supported vana-dium oxide catalysts.The real time reaction status of soot combustion over these catalysts was de-tected by in-situ UV-Raman spectroscopy.The results indicate that TiO2 undergoes a crystalline phase transformation from anatase to rutile phase with the increasing of reaction temperature.However,no obvious phase transformation process is observed for ZrO2 support.The structures of supported va-nadium oxides also depend on the V loading.The vanadium oxide species supported on TiO2 or ZrO2 attain monolayer saturation when V loading is equal to 4(4 is the number of V atoms per 100 support metal ions).Interestingly,this loading ratio(V4/TiO2 and V4/ZrO2) gave the best catalytic activities for soot combustion reaction on both supports(TiO2 and ZrO2).The formation of surface oxygen com-plexes(SOC) is verified by in-situ UV Raman spectroscopy and the SOC mainly exist as carboxyl groups during soot combustion.The presence of NO in the reaction gas stream can promote the pro-duction of SOC.     

Fabrication and characterization of enhanced hydrazine electrochemical sensor based on gold nanoparticles decorated on the vanadium oxide,ruthenium oxide nanomaterials,and carbon nanotubes composites

This work describes the synthesis of mixed oxide film of vanadium and ruthenium by pulsed deposition technique on multiwall carbon nanotubes and the decoration of gold nanoparticles on the mixed film. A ternary electrocatalyst has been developed for the electrochemical oxidation of hydrazine by combining two metal oxide mixtures with Au nanoparticles. Surface morphology and chemical composition of the electrode have been examined with SEM, EDX, HRTEM, EIS, and XRD. The peak current of hydrazine increased 9 times at the AuNPs/(VOx-RuOx)/CNT/GCE compared to the bare GCE, and the peak potential shifted to negative 848 mV. Linear sweep voltammetry (LSV) and amperometric techniques revealed that the AuNPs/(VOx-RuOx)/CNT/GCE displays linear concentration range 2.5–10000 µM (LSV) and the concentration range 0.03–100 µM (amperometry). The limit of detection (LOD) is 0.5 μM and 0.1 μM at (S/N = 3) for LSV and amperometric technique, respectively. The results obtained show a good RSD% of 2.1%–3.2% and reasonable recovery of 97%–108% of hydrazine detection.     

Surface chemistry of PVD (Cr,Al)N coatings deposited by means of direct current and high power pulsed magnetron sputtering

(Cr,Al)N protective coatings were deposited using direct current (DC) and high power pulse magnetron sputtering (HPPMS) technology. The chemical analysis of the surface near region of the coatings was performed by means of X‐ray photoelectron spectroscopy (XPS) and was correlated to the deposition parameters and resulting coating morphology. A surface oxidation process was observed by means of angle resolved XPS studies and XPS sputter profiles. Both DC and HPPMS coatings showed a non‐stoichiometric chemical composition with a significant excess of cations (chromium and aluminum) in the bulk structure, leading to a metastable phase. The passivation reaction of the surface near region leads to an anion to metal ratio which goes along with an enrichment of aluminum in the surface near region as a thermodynamically favored composition in equilibrium with the ambient atmosphere. Interestingly, the variation of the pulse duration of the HPPMS process, which led to a change of the peak current, had a strong influence on the resulting composition of the surface near region. Copyright © 2013 John Wiley & Sons, Ltd.     

Effects of bias voltage on structure and properties of TiAl‐doped a‐C:H films prepared by magnetron sputtering

Hydrogenated TiAl‐doped a‐C:H films were deposited on Si substrates by middle frequency magnetron sputtering TiAl target in argon and methane gas mixture atmosphere. Effects of substrate bias voltage on structure and properties of the films, such as the surface morphology, hardness, chemical nature and bond types, were investigated by means of atomic force microscopy (AFM), XPS, Raman spectroscopy and nanoindentation. The friction and wear behaviors of the deposited films were characterized on an UMT‐2MT tribometer. SEM was utilized to analyze the wear scar on steel balls and debris after sliding on the deposited films under dry friction conditions. The results demonstrated that the film deposited at ? 100 V exhibited low friction coefficient which is attributed to the easier formation of graphitized transfer layer. Copyright © 2010 John Wiley & Sons, Ltd.     

Effects of substrate temperature on properties of ITO-ZnO composition spread films fabricated by combinatorial RF magnetron sputtering

We have fabricated ITO-ZnO composition spread films to investigate the effects of substrate temperature on their electrical and optical properties by using combinatorial RF magnetron sputtering. It turned out by X-ray measurement that the film with zinc contents above 16.0 at% [Zn/(In+Zn+Sn)] showed amorphous phase regardless of substrate temperature. The amorphous ITO-ZnO film had lower resistivity than polycrystalline films. When the films were deposited at 250 °C, the minimum resistivity of 3.0×10⁻⁴ Ω cm was obtained with the zinc contents of 16.0 at%. The indium content could be reduced as high as ~30 at% compared to that of ITO for the films having similar resistivity (~10⁻⁴ Ω cm). However, a drastic increase of resistivity was observed for the ITO-ZnO films deposited at 350 °C, having zinc contents below 15.2 at%.     

A systematic quantum chemical investigation of the C-H bond activation in methane by gas phase vanadium oxide cation VO+

The interaction between a methane molecule and the VO(+) cation in the gas phase has been investigated by means of single reference density functional (B3LYP) and wave function-based multireference (MR) correlation calculations. For the latter, an extrapolation technique is used to evaluate correlation energies at the basis set limit. A comprehensive picture for the C-H activation features a variety of molecular structures corresponding to both minima and transition states. Possible reaction paths are discussed, also taking into account change of the spin multiplicity. Activation of the methane molecule by VO(+) is always an endothermic process. Competing reaction paths might be expected. An evaluation of miscellaneous computational methods is performed using calculated energy differences for various molecular structures. Results obtained from the MR calculations exhibit no systematic convergence with increasing size of the active space used, and for two largest active spaces relative energies still differ by up to 25 kJ/mol. Simple mean difference between the B3LYP results and the best MR values is -50 +/- 19 kJ/mol.     

The effect of glow discharge sputtering on the analysis of metal oxide films

The potential of radiofrequency glow discharge optical emission spectrometry (rf-GD-OES) for the quantification and the solid-state speciation of metal oxide films has been investigated in this work. Two types of oxide coatings, an iron oxide film deposited on silicon and a chromate conversion coating (CCC), were studied at 700 Pa of pressure and 30 W of forward power. The metal to oxygen ratios in the quantitative depth profiles (Fe/O and Cr/O, respectively) were used to evaluate the oxidation states of iron and chromium in the oxide films, demonstrating the capability of GD-OES technique for depth-resolved solid-state speciation. Furthermore, the effect of glow discharge sputtering on the samples surface in terms of modifications in the surface morphology and species transformations, were investigated by using atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS). The iron and chromium oxidation states were carefully studied by XPS at the original samples surface and at the bottom of GD craters, and a systematic reduction of metal elements was observed after rf-GD-OES analysis. In the case of thin oxide films, preferential sputtering can be considered as a critical factor since oxygen atoms can be preferentially sputtered, leaving a metal-enriched surface and, therefore, promoting the reduction of metal elements. In the present study preferential sputtering was found to be sample dependent, changing the proportion of the metal reduction in the oxide film with its composition. Additionally, alternative sputter-depth-profiling techniques such as secondary ion mass spectrometry (SIMS), femtosecond laser ablation (fs-LA), and XPS ion gun were used for the analysis of the CCC in order to evaluate the reduction of Cr⁶⁺ to Cr³⁺ depending on the sputtering mechanism.     

Separate evolution of H2 and O2 from H2O on visible light-responsive TiO2 thin film photocatalysts prepared by an RF magnetron sputtering method

Visible light-responsive TiO₂ thin film photocatalysts (Vis-TiO₂) have been prepared on Ti metal foil (Vis-TiO₂/Ti) or ITO glass (Vis-TiO₂/ITO) substrates by a radio-frequency magnetron sputtering (RF-MS) method. The UV–Vis spectra as well as photoelectrochemical performance of Vis-TiO₂ were affected by various calcination treatments such as calcination in air or NH₃. Calcination treatment in NH₃ (1.0 × 10⁴ Pa, 673 K) was particularly effective in increasing the visible light absorption of Vis-TiO₂ as well as in enhancing its photoelectrochemical performance and photocatalytic activity. A novel Vis-TiO₂ thin film photocatalyst (Vis-TiO₂/Ti/Pt) was prepared by an RF-MS method where Vis-TiO₂ was deposited on one side of a Ti metal foil substrate and nanoparticles of Pt were deposited on the other side. The separate evolution of H₂ and O₂ from H₂O could be successfully achieved by using an H-type glass cell consisting of two aqueous phases separated by Vis-TiO₂/Ti/Pt and a proton-exchange membrane. It was found that the rate of the separate evolution of H₂ and O₂ was also dramatically enhanced by calcination treatment of Vis-TiO₂ in NH₃.     

Achieving ultra-low friction of a-C:H film grown on 9Cr18Mo steel for industrial application via programmable high power pulse magnetron sputtering

Owing to the high hardness and hydrogen passivation of carbon bonds, hydrogenated diamond-like carbon (a-C:H) film has shown promising potential to achieve ultra-low friction and wear on steel surfaces. Here, a-C:H film was successfully deposited on 9Cr18Mo steel via programmable high power pulse magnetron sputtering and potential application for industrial was evaluated. The a-C:H films against different mating materials of GCr15 steel balls, Al₂O₃, Si₃N₄, ZrO₂, and a-C:H-coated GCr15 balls all showed ultra-low friction under a normal load of 5 N in a dry ambient air environment. Among them, self-mating tribo-system a-C:H films on steel surfaces and a-C:H-coated steel balls achieve best friction performance; the principal reason is that both contacting surfaces coated with a-C:H film have the lower electron affinities compared with other tribo-systems. However, the differences of coefficient of friction (COF) for uncoated-GCr15, Al₂O₃, ZrO₂, Si₃N₄, and a-C:H(GCr15) balls can be attributed to different sizes of clustering in wear debris. This work provides new insights on synthesis and industry application of the a-C:H films with ultra-low friction properties.     

Intramolecular rearrangements of cyclooctadienerhodium(I) fragments supported on a vanadium oxide cluster as evidenced by dynamic17O NMR spectroscopy

Variable-temperature¹⁷O NMR together with⁵¹V and¹⁰³Rh NMR studies on newly prepared vanadium oxide-supported organorhodium(I) fragment(s), [(RhCOD) _n (V₄O₁₂)]^(4–n)– (n = 1, 2; COD = ⁴-1,5-cyclooctadiene) indicate that intramolecular rearrangements of RhCOD fragment(s) on a vanadium oxide surface occur in solution.