Negatron effects in CdSe1 − x Te x and ZnS1−x Se x films

Various negatron effects in films of alloys of II–VI compounds deposited from solutions as a function of the deposition mode and heat treatment are studied. It is found that the negative photocapacitance effect, which was first discovered in ZnS_1?x Se _x films, and the slowly relaxing negative photoelectric effects, which are caused by the transition of electrons located in a nanoscale surface layer from the shallow energy levels of trapping centers to deeper levels with a lower polarizability and by the presence of nanoscale clusters in these materials, which play the role of a “reservoir” for minority charge carriers, occur according to a single mechanism. A model to explain the basic laws of negative photoconductivity in CdSe_{1 ? x} Te _x films deposited from a solution is proposed. Negative residual conductivity is explained in terms of double-barrier relief model, while negative differential photoconductivity is attributed to the presence of nanoscale electric domains.     

Magnetotransport effects in paramagnetic Gd x Mn1 − x S

The electrical resistance of Gd _x Mn_{1 ? x} S solid solutions with x = 0.1, 0.15, and 0.2 has been measured at magnetic field H = 0.8 T and at zero magnetic field within the 100 K < T < 550 K temperature range. The magnetoresistance peak is observed above room temperature. On heating, the composition with x = 0.2 exhibits the change of magnetoresistance sign from positive to negative and the magnetoresistance peak near the transition to the magnetically ordered state. The experimental data are interpreted in the framework of the model involving the orbital ordering of electrons and the arising electrical polarization leading to the changes in the spectral density of states for electrons in the vicinity of the chemical potential in the applied magnetic field.     

Phase transformations in the Mn-Ge system and in Ge x Mn1 ? x diluted semiconductors

Results of an X-ray diffraction study as well as magnetic and electrical measurements of the solid-state reactions in Ge/Mn polycrystalline films of an 80/20 atomic composition have been presented. It has been shown that the ferromagnetic Mn₅Ge₃ phase is formed first on the Ge/Mn interface after annealing at ??120°C. The further increase in the annealing temperature to 300°C leads to the beginning of the synthesis of the Mn₁₁Ge₈ phase, which becomes dominating at 400°C. The existence of new structural transitions in the Mn-Ge system in the region of ??120 and ??300°C has been predicted on the basis of the presented results and results obtained earlier when studying solid-state reactions in different film structures. The supposition about the general chemical mechanisms of the synthesis of the Mn₅Ge₃ and Mn₁₁Ge₈ phases during the solid-state reactions in the Ge/Mn films of the 80/20 atomic composition and the phase separation in Ge _x Mn_{1 ? x} (x > 0.95) diluted semiconductors has been substantiated.     

High-temperature ferromagnetism in Si1 ? x Mn x (x ≈ 0.5) nonstoichiometric alloys

It has been found that the Curie temperature (T _C ?? 300 K) in nonstoichiometric Si_{1 ? x} Mn _x alloys slightly enriched in Mn (x ?? 0.52?C0.55) in comparison to the stoichiometric manganese monosilicide MnSi becomes about an order of magnitude higher than that in MnSi (T _C ?? 30 K). Deviations from stoichiometry lead to a drastic decrease in the density of charge carries (holes), whereas their mobility at about 100 K becomes an order of magnitude higher than the value characteristic of MnSi. The high-temperature ferromagnetism is ascribed to the formation of defects with the localized magnetic moments and by their indirect exchange interaction mediated by the paramagnetic fluctuations of the hole spin density. The existence of defects with the localized magnetic moments in Si_{1 ? x} Mn _x alloys with x ?? 0.52?C0.55 is supported by the results of numerical calculations performed within the framework of the local-density-functional approximation. The increase in the hole mobility in the nonstoichiometric material is attributed to the decay of the Kondo (or spin-polaron) resonances presumably existing in MnSi.     

Long-wavelength optical phonons in mixed crystal AB1 ? x C x

The properties of long-wavelength optical phonons in mixed crystals are discussed within the framework of a model similar to modified random-element-isodisplacement (MREI) model. This model can be applied to the one-mode behavior, the two-mode behavior and that of the third category. The frequency and the electron-phonon coupling constants varying with the concentration ratio x is obtained.     

Dielectric relaxation in LaSrCo1−x Al x O4 ceramics

Dielectric properties of LaSrCo_1−x Al _x O₄ (x=0, 0.1, 0.3, and 0.5) ceramics were investigated in a broad frequency and temperature range. The AC conductivity decreased with the increasing Al concentration. Dielectric constant increased at lower frequency and decreased at higher frequency when the Al concentration increased from 0.1 to 0.3, then it decreased at all frequencies as the x value was 0.5. While the dielectric loss decreased first and then increased with the increasing Al concentration. There was one dielectric relaxation in the curve of temperature dependence of dielectric properties of LaSrCo_0.7Al_0.3O₄ ceramics. The nonadiabatic small polaronic hopping process should contribute to the dielectric relaxation in the present ceramics. The AC conductivity increased in about one order of magnitude after annealing the sample in the oxygen atmosphere, and this should be attributed to the appearance of interstitial oxygen in the annealed sample.     

Magnetic hyperfine fields in Y2Fe17−x Si x compounds

Y₂Fe_17–x Si _x compounds withx=0, 0.5, 1.0, 1.5, 2.0, 2.5 and3.0 were investigated by magnetic measurement andNMR. It is found that with increasing Si content the Curie temperatureT _C increases while the average Fe magnetic moment _Fe decreases. NMR study indicates that Si preferentially substitute the Fe atoms at 4f sites, which is responsible for the increase ofT _C.     

Optical Properties of High Pressure Phases in ZnTe 1− x Se x

We report on the optical properties of high pressure semiconducting phases in ZnTe 1 m x Se x . In the Te rich side, the cinnabar phase is observed in the upstroke between typically 9.5 and 12.5 GPa with a pressure interval of existence that decreases with increasing the Se content. In most studied samples, the indirect absorption edge could be determined, with values of the bandgap increasing with the Se content and ranging from 1.2 to 1.7 eV. In the downstroke, the cinnabar phase is observed in the whole composition range but its bandgap can not be unambiguously determined in the Se-rich side, as it coexists with rocksalt or zincblende phases. The indirect semiconducting rocksalt phase is observed in the Se-rich side, with an indirect bandgap of the order of 0.7 eV. Within the experimental errors, the bandgaps of both the cinnabar and NaCl phases are pressure insensitive, in agreement with first-principles pseudopotential band structure calculations, that predict very low pressure coefficients for both indirect transitions.     

Magnetism influenced by structural disorder in melt-spun DyMn6 − x Ge6 − x Fe x Al x (x = 2.5, 3)

Different chemical and/or geometrical orders were found in melt-spun DyMn_6???x Ge_6???x Fe _x Al _x with x = 2.5 and 3 having fully amorphous and mixed (crystalline and amorphous) structure, respectively. Thermal variations in magnetization M from liquid helium up to room temperature for both samples are similar. Magnetization value at zero field cooled curve reaches about 0.1 μ_B per formula unit at 2 K and then increases. Two maxima are visible, the first at 50 K (a sharp effect) and the second very broad ranging from 150 to 200 K. ⁵⁷Fe Mössbauer spectrometry investigation revealed a remaining magnetic component in addition to a prevailing quadrupolar feature. Application of a weak external magnetic field causes an increase in the mean hyperfine magnetic field B _hyp and the volume fraction of magnetic component. This observation was confirmed by results of M(T), M(H) and AC magnetic susceptibility measurements. In short-range ordered crystallographic zones characteristic of melt-spun DyMn_6???x Ge_6???x Fe _x Al _x (x = 2.5, 3) alloys, the related magnetic ordering, called the mictomagnetism or the cluster spin glass appears.     

Thermovoltaic effect in samarium sulfide-based Sm1 − x Eu x S heterostructures

The thermovoltaic effect in samarium sulfide-based Sm_{1 ? x} Eu _x S bulk heterostructures in the temperature interval 300–520 K is considered. It is shown that this effect is due to an artificially produced samarium ion concentration gradient, rather than to an external temperature gradient.     

Magnetic cluster developement in In1−x Mn x Sb semiconductor alloys

X-ray Diffraction (XRD), X-ray Photoelectron Spectroscopy (XPS), Transmission Electron Microscopy (TEM) and magnetic measurements as a function of applied magnetic field and temperature for In_1?x Mn _x Sb (0.05≤x≤0.2) system are reported. Magnetic measurements performed at high and small magnetic field in ZFC and FC indicate the coexistence of ferromagnetic In_1?x Mn _x Sb solid solution and two types of magnetic cluster: ferromagnetic MnSb and ferrimagnetic Mn₂Sb. XPS valence band and Mn 2p core level spectra have confirmed the presence of MnSb and Mn₂Sb phases. TEM images show some manganese antimonide phase microinclusions with dimension between (30–40) nm.     

Phase analysis in Zn1− x Cr x O through charge density

Cr-doped zinc oxide Zn_{1? x} Cr _x O powder samples are synthesized by a standard high-temperature solid-state reaction technique with x?=?0.00, 0.04, and 0.08. The powders are analyzed for the electron densities using X-ray diffraction. The electron densities of observed wurtzite phase ZnO as well as the spinel phase ZnCr₂O₄ are mapped and analyzed for Cr doping concentration. The charge density study reveals that the Cr atom is added in the lattice as Cr³⁺ rather than Cr²⁺.     

Enhancement of the colossal magnetoresistance in Eu1 − x Ca x B6

The transport and magnetic properties of single crystal samples of substitutional solid solutions Eu_{1 ? x} Ca _x B₆ (0 ≤ x ≤ 0.26) have been studied at temperatures 1.8–300 K in magnetic fields up to 80 kOe. It has been shown that an increase in the calcium concentration results in the suppression of the charge transport accompanied by an increase in the amplitude of the colossal magnetoresistance (CMR) up to the value (ρ(0) ? ρ(H))/ρ(H) ≈ 7 × 10⁵ detected for x = 0.26 at liquid-helium temperature in a field of 80 kOe. The transition from the hole-like conductivity to the electron-like conductivity has been observed in the Eu_0.74Ca_0.26B₆ solid solution in the CMR regime at T < 40 K. The Hall mobility values μH = 200?350 cm²/(V s) estimated for charge carriers in the strongly disordered matrix of the Eu_0.74Ca_0.26B₆ solid solution are comparable with the charge carrier mobility μH = 400?600 cm²/(V s) for the undoped EuB₆ compound. The anomalous behavior of the transport and magnetic parameters of the Eu_{1 ? x} Ca _x B₆ solid solutions is discussed in terms of a metal-insulator transition predicted within the double exchange model for this system with low carrier density.     

Electro-optic effect in SrTiO3 and Sr1–x Ca x TiO3 (x = 0.014)

The results of the investigation of the quadratic electro-optic effect in Sr_1–x Ca _x TiO₃ with x = 0.014 (SCT) and in nominally pure SrTiO₃ (STO) at room temperature in applied direct-current (dc) and alternating-current (ac) electric fields have been presented. It has been shown that the quadratic (in polarization) electro-optic coefficients of STO and SCT crystals coincide within the accuracy of the determination (±5%). It has been found that, in nominally pure STO measured in a dc electric field, there is a relaxation of the electro-optic effect with a relaxation time τ ≈ 30 s due to the formation of a space charge in the sample. No similar effect in SCT has been observed. A possible mechanism for the formation of a space charge in STO and SCT has been discussed.     

On the magnetic susceptibility of Pd1−x Ag x in the range 0.5≦x≦1

The weak variation of the magnetic bulk susceptibility of Pd_1–x Ag _x with temperature T and silver mole fractionx within 0.5x1 has been investigated in the range 5KT400K. Experimental evidence can be given for an intersection point of the susceptibility isotherms (T=const,x) atx=0.55. The observed dependence of on T andx is interpreted by means of a semiphenomenological alloy susceptibility function (T,x).     

Reflection electron energy loss spectroscopy in Mn x Si1 − x composite structures

The dependences of the product of the electron inelastic mean free path λ and the differential cross section for inelastic electron scattering K on energy loss are determined from the experimental energy-loss spectra of the reflected electrons of Mn _x Si_{1 ? x} (0 ≤ x ≤ 1) composite structures. It is shown that the minimum values for the dependences of the product λK on the electron-energy loss can be used for the quantitative determination of element concentrations in this composite structure.     

Surface segregation in CuxNi1−x alloy

The tight-bonding Hartree Hamiltonian and a mixed Bethe-lattice approximation is used to study the surface segregation phenomenon of Cu_xNi_1−x alloy. It is found that Ni atoms do segregate to the surface layer in the Cu-rich range (0.75 < x < 1). This is in contrast with previous theories which predict the enrichment of Cu atoms at the surface for all bulk Cu concentrations. However, the present theory agrees reasonably well with the recent experimental observation of a crossover at x = 0.84 by Hashizume et al. [1].     

Magnetic phase transition in ɛ-In x Fe2 − x O3 nanowires

This paper reports on a study of magnetic properties of ordered arrays of ?-In _x Fe_{2 ? x} O₃ (x = 0.24) nanowires possessing a high room-temperature coercive force of 6 kOe. Lowering the temperature below 190 K brings about a sharp decrease of the coercive force and magnetization of nanowires driven by the magnetic phase transition from the ferrimagnetic into antiferromagnetic phase. The transition is accompanied by a decrease of the magnetic anisotropy constant, which accounts for the anomalous frequency dependence of the position of the maximum in the temperature dependence of dynamic magnetic susceptibility. In the low-temperature phase, a spin-flop transition in the magnetic field of 28 kOe has been observed at T = 2 K. Lines related to the high-temperature hard-magnetic and low-temperature phases have been identified in electron spin resonance spectra of the nanowires. A line lying near zero magnetic field and evolving from the nonresonant signal related to the microwave magnetoresistance of the sample has also been detected.     

Pressure Dependence of the Bandgap Bowing in Zinc-Blende ZnTe 1− x Se x

We report on the pressure dependence of the bandgap bowing in the ZnTe 1 m x Se x alloy, in the whole composition range. The bandgap bowing parameter is shown to increase almost linearly with pressure from 1.23 at ambient pressure to 1.6 at 7 GPa. Saturation effects observed in the pressure dependence for x =0.1 and x =0.2 are shown to be related to the direct-to-indirect crossover. Results are discussed and interpreted in the framework of structural relaxation models for gap bowing. A prediction of these models (the negative bowing of the o 15 m ;X 1 transition) is shown to be compatible with the fact that the direct-to-indirect crossover pressure increases with the Se content.