层状氧化钼的电子结构、磁和光学性质第一原理研究

按照基于自旋密度泛函理论的赝势平面波第一原理计算方法,理论研究了两种层堆叠结构氧化钼(正交和单斜MoO_3)的电子结构、磁性和光学特性,探讨其作为电致变色材料或电磁材料在光电子器件中的技术应用.采用先进的半局域GGA-PW91和非局域HSE06交换相关泛函精确计算晶体结构和带隙宽度.计算得出较低密排面解离能,表明两种层状氧化钼的单片层很容易从体材料上剥落.能带结构和投影态密度分析表明:导带底和价带顶电子态主要来自于层平面方向成键的原子轨道,呈现典型的二维电子结构特征.无缺陷的MoO_3块体材料具有明显的磁矩,O空位会导致磁矩增加;由Mo原子和顶点氧原子产生的亚铁磁耦合磁矩是MoO_3层状材料磁性的主要来源;层状氧化钼在可见光区具有明显的光吸收响应,光吸收谱表现出显著的各向异性并在带电时发生明显的蓝移或形成新的低频可见光吸收峰.计算结果证明层状氧化钼具有明显的电致变色和磁控性能,为设计高性能电磁或光电子功能材料提供了理论依据和技术数据.     

Spin current transmission in Co1-xTbx films

We investigate the spin to charge conversion phenomena in Y₃Fe₅O₁₂/Pt/Co_1-xTb_x/Pt multilayers by both the spin pumping and spin Seebeck effects.We find that the spin transport efficiency is irrelevant to magnetization states of the perpendicular magnetized Co;Tb;films,which can be attributed to the symmetry requirement of the inverse transverse spin Hall effect.Furthermore,the spin transmission efficiency is significantly affected by the film concentration,revealing the dominant role of extrinsic impurity scattering caused by Tb impurity.The present results provide further guidance for enhancing the spin transport efficiency and developing spintronic devices.     

金刚石纳米颗粒中氮空位色心的电子自旋研究

通过电子注入的方法制备了含氮空位色心单光子源的金刚石荧光纳米颗粒. 自旋回声测试结果表明, 纳米颗粒中氮空位色心的相干时间T₂很短, 介于0.86 μs至5.6 μs之间. Ramsey干涉条纹测试结果表明, 氮空位色心NV1点的退相干时间T₂^* 最大, 为0.7 μs, 其电子自旋共振谱可分辨的最小线宽为1.05 MHz. 并且NV1点的电子自旋共振谱可分辨氮空位色心本身的¹⁴N核自旋与 氮空位色心电子自旋之间的2.2 MHz超精细相互作用, 这对于在金刚石纳米颗粒中实现核自旋的操控和多个量子比特的门操作具有重要意义. 关键词： 纳米颗粒 氮空位色心 电子自旋     

Theory of optical conductivity and photoemission intensity for Cu---O plane superconductors

The quasiparticle self-energy and the dynamic spin and charge susceptibilities are calculated self-consistently in RPA for the two-dimensional Hubbard model with additional electron-phonon interaction. Vertex corrections lead to an enhancement of charge fluctuations and a suppression of spin fluctuations, thus increasing T_c. The resulting optical reflectivity in the normal and superconducting state is found to be in qualitative agreement with the experiment data on YBa₂Cu₃O₇ for intermediate values of λ_ph and U/t. We calculate also the photoemission intensity in the normal and superconducting state.     

Cr,Mo,Ni在$lt;i$gt;α$lt;/i$gt;-Fe（C）中占位、键合性质及合金化效应的第一性原理研究

基于密度泛函理论第一性原理方法,采用广义梯度近似下的PW91泛函形式,计算了合金元素Cr,Mo,Ni固溶于α-Fe（C）的电子结构,从晶格畸变、结合能、态密度、重叠布居及差分电荷密度等计算结果出发探讨了合金元素在α-Fe（C）中占位、键合性质及其合金化效应,结果表明：Cr优先占据铁素体晶胞顶角位置,而Mo,Ni 优先占据体心位置;Cr与晶胞的结合能最大,晶胞最稳定,Ni次之,Mo最低;Cr,Mo,Ni 在晶胞中都存在金属键、共价键和微弱离子键的共同作用,成键轨道主要是Cr3d与Fe3d,Mo4d与Fe3d,Ni3d与Fe3d,C2p的交互作用形成的;Cr与晶胞原子间的键合作用强,晶胞的稳定性好,对增强钢材的机械性能帮助较大,Ni的键合作用较弱,但还是能保持晶胞的稳定性,Mo虽然键合作用强,但反键作用也非常强,使晶胞的稳定性大大降低,对钢材的机械性能危害较大. 关键词： 第一性原理 α-Fe（C）')" href="#">α-Fe（C） 键合性质 合金化效应     

High-temperature ferromagnetism in Zn1−xMnxO semiconductor thin films

Clear evidence of ferromagnetic behavior at temperatures >400 K as well as spin polarization of the charge carriers have been observed in Zn_1−xMn_xO thin films grown on Al₂O₃ and MgO substrates. The magnetic properties depended on the exact Mn concentration and the growth parameters. In well-characterized single-phase films, the magnetic moment is 4.8 μ_B/Mn at 350 K, the highest moment yet reported for any Mn doped magnetic semiconductor. Anomalous Hall effect shows that the charge carriers (electrons) are spin-polarized and participate in the observed ferromagnetic behavior.     

掺铌SrTiO_3中的逆自旋霍尔效应

采用磁控溅射法在未掺杂和掺杂的SrTiO_3基片上沉积了NiFe薄膜,通过翻转测试法分离出掺杂样品中的自旋整流电压和逆自旋霍尔电压.研究结果表明:在未掺杂的SrTiO_3基片中,翻转前后测试的电压曲线基本一致,为NiFe薄膜自旋整流效应产生的电压.对于掺Nb浓度x为0.028, 0.05, 0.1, 0.15, 0.2的SrTiO_3基片,分离出的逆自旋霍尔电压随掺杂浓度增加而减小,在掺杂浓度为0.15和0.2的样品中没有探测到明显的逆自旋霍尔电压.本文的结果表明,在SrTiO_3中掺入强自旋轨道耦合的杂质,通过掺杂浓度可以实现对SrTiO_3中逆自旋霍尔效应的调控,这类可调控的自旋相关研究为自旋电子器件的研究和开发提供了更多的可能性,具有很大的潜在应用价值.     

不同组分厚度比的LaMnO3/SrTiO3异质界面电子结构和磁性的第一性原理研究

基于密度泛函理论的第一性原理计算, 研究了(LaMnO₃)_n/(SrTiO₃)_m(LMO/STO)异质界面的离子弛豫、电子结构和磁性质. 研究表明, 不同组分厚度比及界面类型时, 离子弛豫程度各不相同, 并且界面处的电子性质受此影响较大. 对于n型界面, 当LMO的厚度达到6个单胞层后, 电子会从LMO转移到STO, 转移的电子占据界面层Ti原子的3d电子轨道, 界面处出现二维电子气. 对于n型界面(LMO)_n/(STO)₂, 随着LMO厚度数n的增加, 由离子弛豫造成的结构畸变减小, 而界面处Ti原子周围电子的态密度和自旋极化却增大, 表明高厚度比的n型界面有利于产生高迁移率的二维电子气和自旋极化. 而对于p型(LMO)₂/(STO)₈界面, 在STO一侧基本没有结构畸变, 界面处无电子转移和自旋极化现象. 通过计算平均静电势发现n型和p型界面处的势差大小相差2 eV, 解释了p型界面不容易发生电荷转移的原因.     

EPR studies of weakly coupled oxomolybdenum (V) and low-spin iron (III) porphyrin centers

Novel compounds containing twoS=1/2 coupled spin centers (Mo(V) and low spin Fe(III) have been investigated in detail by X- and Q-band EPR spectroscopy, spectral simulation and molecular modelling calculations. For one system with a Mo?Fe distance of ≈9.4 Å the dominant dipolar coupling allows distinction among structures that are consistent with molecular modelling calculations. For the second system with a Mo?Fe of ≈ 7.9 Å the exchange interaction is dominant (0.5 <J < 3.0 GHz). These coupled systems are preliminary benchmarks for using EPR to investigate the Mo?Fe interaction in sulfite oxidase.     

阴离子取代合成Sr3LaAxV3-xO12:Eu3+(A=Mo,W)白光荧光粉

通过高温固相法合成Sr₃LaA_xV_3-xO₁₂:Eu³⁺（A=Mo,W）荧光粉,利用MoO₄^2-和WO₄^2-取代基质中部分VO₄^3-,改变基质组成和结构,进而影响基质和激活剂Eu³⁺离子的发光性能。采用X射线衍射（XRD）、扫描电子显微镜（SEM）和荧光分光光度计对所合成样品的物相、形貌、荧光性能及荧光寿命进行表征。研究表明,MoO₄^2-和WO₄^2-的部分掺杂对基质发光位置和强度均有影响,能明显减弱VO₄^3-的发光,但对Eu³⁺离子发光影响不大,添加电荷补偿剂F^-可以加强VO₄^3-对Eu³⁺离子的能量传递。通过调整基质VO₄^3-发光和Eu³⁺离子发光,可以得到单一基质的白光荧光粉。初步探讨了阴离子掺杂对Eu³⁺离子红光发射增强的机理。     

Structural and magnetic properties of double-perovskite Ba2MnMoO6 by density functional theory

Perovskite-like materials which include magnetic elements have relevance due to the technological perspectives in the spintronics industry. In this work, we report the studies of Ba₂MnMoO₆ material by using the density functional theory. The interchange-correlation potential was included through the generalized gradient approximation. Our structural calculations are in agreement with the experimental results which show that the material crystallizes in the 225 space group (Fm3¯m) and has a lattice parameter of about 8070 Å. The density of states study was carried out by considering the up and down spin orientations. Results show that Ba₂MnMoO₆ has a conductor behavior due to dominant Mn spin-up and Mo spin-down contributions. The magnetic moment was calculated to be 2.9 μ_B.     

Effects of paramagnetic cations on the nonexponential spin-lattice relaxation of rare spin nuclei in solids

Nonexponential spin-lattice relaxation is often observed for rare spin nuclei in the solid state. Deviation from single-component decay may be amplified by the coupling of rare spin nuclei to paramagnetic centers. Nonexponential spin-lattice relaxation was observed in derivatized silica gels resins. This phenomenon was localized and enhanced when paramagnetic transition metal cations were bound to surface functional groups. A stretched exponential analysis method was determined to be robust in fitting nonexponential relaxation curves for silica gels both with and without bound paramagnetic ions. Spin-lattice relaxation rates (T₁⁻¹) for functional group nuclei increased as a function of percent surface coverage with metal ion. The magnitude of the relaxation rate increase was dependent upon internuclear distances from the paramagnetic center. At low surface coverages, a semi-random distribution of paramagnetic centers increased the degree of stretching of spin-lattice relaxation decays, as measured by decreases in the calculated stretching parameter β. At higher surface coverages, calculated β values reached a limiting value, indicating that while the spin-diffusion mechanism in metal-ex-changed silica gels is restricted, it is not completely diminished.     

Shot noises of spin and charge currents in a ferromagnet-quantum-dot-ferromagnet system

We have investigated the shot noises of charge and spin current by considering the spin polarized electron tunneling through a ferromagnet-quantum-dot-ferromagnet system. We have derived the spin polarized current noise matrix, from which we can derive general expressions of shot noises associated with charge and spin currents. The spin and charge currents are intimately related to the polarization angles, and they behave quite differently from each other. The shot noise of charge current is symmetric about the gate voltage whose structure is modified by the Zeeman field considerably. There exists oscillations in spin current shot noise in the absence of source-drain bias at zero temperature, and it is asymmetric in the positive and negative regimes of sourcedrain voltage. The shot noise of spin current behaves quite differently from the shot noise of charge current, since the spin current components I_x^s, I_y^s oscillate sinusoidally with the frequency ?_? in the ?th lead, while the I_z^s component of spin current is independent of time.     

Transparent manganite films as hole injectors for organic light emitting diodes

Organic light-emitting diodes (OLEDs) are nowadays one of the most attractive devices based on organic semiconductors due to their successful application in the display technology. Electroluminescence in OLEDs is mainly governed by the fluorescence from excited singlet states, which have large transition probabilities providing the major radiative pathway. The “forbidden” triplet state emission can be activated by increasing spin–orbit coupling via dye doping. The singlet–triplet exciton formation statistics is usually given by 1:3 partition due to the quantum constrains.

Injection of carriers with finite spin polarisation should influence and modify the recombination statistics and can be used for tuning of the device efficiency. In this context, the development of a new class of electrodes able to guarantee both efficient charge and spin injection becomes of paramount importance. We show that strongly spin polarised colossal magnetoresistance manganite La_0.7Sr_0.3MnO₃ (LSMO) can successfully substitute conventional ITO electrodes in OLEDs. Highly transparent, metallic and ferromagnetic LSMO layers were used in combination with standard Al and spin polarised Co top electrodes. Electrical and optical characterisations of the OLEDs with spin polarised electrodes indicate the applicability of the new manganite electrodes for organic light-emitting devices.     

Electronic and Magnetic Properties of Double Perovskite Ca2CrSbO6

First-principles calculations have been performed for the study of the electronic band structure and ferromagnetic properties of double perovskite Ca2CrSbO6. The density of states, total energy, spin magnetic moment, and charge density were calculated and analyzed in details. It is found that Ca2CrSbO6 has a stable ferromagnetic ground state and the spin magnetic moment per molecule is about 2.99#B. The chromium contributes the most in the total magnetic moments. The results indicate that Ca2CrSbO6 is half-metallic.     

Crystal growth and magnetic properties of quantum spin liquid candidate KErTe_2

Recently rare-earth chalcogenides have been revealed as a family of quantum spin liquid(QSL) candidates hosting a large number of members. In this paper we report the crystal growth and magnetic measurements of KErTe_2, which is the first member of telluride in the family. Compared to its cousins of oxides, sulfides and selenides, KErTe_2 retains the high symmetry of R■m and Er~(3+) ions still sit on a perfect triangular lattice. The separation between adjacent magnetic layers is expectedly increased, which further enhances the two dimensionality of the spin system. Specific heat and magnetic susceptibility measurements on KErTe_2 single crystals reveal no structural and magnetic transition down to 1.8 K.Most interestingly, the absorption spectrum shows that the charge gap of KErTe_2 is roughly 0.93±0.35 e V, which is the smallest among all the reported members in the family. This immediately invokes the interest towards metallization even superconductivity using the compound.     

双磁性中心内嵌富勒烯Y_2C_2@C_(82)-C_2(1)中的超快自旋动力学行为

自旋翻转和自旋转移是实现基于内嵌富勒体系自旋逻辑功能器件设计的先决条件.本文以双磁性中心内嵌富勒烯Y_2C_2@C8_2-C_2(1)体系为例,采用第一性原理计算方法,结合Λ进程理论模型和自编的遗传算法程序,在该内嵌富勒烯体系中分别实现了亚皮秒时间尺度内的自旋翻转和自旋转移过程.计算结果表明,优化后的内嵌Y_2C_2团簇结构和实验得到的各项数据基本吻合,并且会对外部的C8_2-C_2(1)笼结构产生一定的排斥力,但由于富勒烯笼状结构具有很强的稳定性,所以整个体系仍然保持碳笼结构的完整性.通过对自旋密度分布与激光脉冲作用下自旋期望值演化的具体分析,经由Λ进程的自旋翻转是基于两个Y元素的整体自旋翻转;自旋转移则源自两个磁性中心以及碳笼之间在激光脉冲作用下的自旋密度重新分布.本文结果揭示了Y_2C_2@C8_2-C_2(1)体系中的超快自旋动力学机理,可望为基于实际内嵌富勒烯分子的自旋逻辑功能器件设计提供理论依据.     

二硫化钼/石墨烯异质结的界面结合作用及其对带边电位影响的理论研究

采用基于色散修正的平面波超软赝势方法研究了二硫化钼/石墨烯异质结的界面结合作用及其对电荷分布和带边电位的影响.研究表明二硫化钼与石墨烯之间可以形成范德瓦耳斯力结合的稳定堆叠结构.通过能带结构计算,发现二硫化钼与石墨烯的耦合导致二硫化钼成为n型半导体,石墨烯转变成小带隙的p型体系.并通过电子密度差分图证实了界面内二硫化钼附近聚集负电荷,石墨烯附近聚集正电荷,界面内形成的内建电场可以抑制光生电子-空穴对的复合.石墨烯的引入可以调制二硫化钼的能带,使其导带底上移至-0.31 eV,提高了光生电子还原能力,有利于光催化还原反应.     

Li+离子掺杂对红色发光材料Y2(W,Mo)O6:Eu3+发光性能的影响

采用高温固相法制备了荧光粉Y2-x(W,Mo)O6:Eu3+,xLi+,利用X射线衍射仪和电子扫描显微镜对样品的结构和形貌进行了表征,并利用荧光光谱法分析了样品的光谱特性.首先在Y2WO6中掺入少量的Mo6+离子,掺入Mo6+后增加了原Y2WO6:Eu3+的激发光谱在近紫外光区的吸收,扩展了激发光谱的谱宽,但却使Y2W...     

13C spin-lattice relaxation in natural diamond: Zeeman relaxation in fields of 500 to 5000 G at 300 K due to fixed paramagnetic nitrogen defects

¹³C Spin–lattice relaxation (SLR) times in the laboratory frame have been measured at room temperature as a function of field in the range of 500 to 5000 G on two natural type Ib and Ia diamonds after dynamic nuclear polarization. Each of the diamonds contains two types of fixed paramagnetic centers with overlapping inhomogeneous electron paramagnetic resonance (EPR) lines. EPR techniques have been employed to identify these defects and to determine their concentrations and relaxation times at X-band. Three different nuclear SLR paths, namely that due to electron SLR and two types of three spin processes, are discussed. The one three-spin process (TSP) (type 1) involves a simultaneous transition of two electron spins belonging to the same hyperfine EPR line and a ¹³C spin while the other process (type 2) involves two electron spins belonging to different hyperfine EPR lines and a ¹³C spin. It is shown that the thermal contact between the ¹³C nuclear Zeeman and electron dipole–dipole interaction reservoirs decreases with an increase in field intensity, thus forming a bottleneck in the ¹³C relaxation path due to the type 1 TSP. The contribution of TSP of type 1 dominates that due to electron SLR and the type 2 TSP in relaxing the ¹³C nuclei in type Ib diamond from about 1200 to 5000 G, while for type Ia diamond it dominates from 500 up to about 2200 G. In type Ia diamond over the range 2200 to 5000 G it seems that the type 2 TSP, which involves electrons of neighboring P2 hyperfine lines, dominates that of electron spin–lattice and the type 1 TSP. Over the range 500 to about 1200 G, a field-dependent electron SLR mechanism associated with N3 centers appears to dominate the ¹³C SLR.