Electronic,optical and bonding properties of MgCO3

The electronic, optical and bonding properties of MgCO₃ (magnesite, rhombohedral calcite-type structure) are calculated using a first-principles density-functional theory (DFT) method considering the exchange-correlation function within the local density approximation (LDA) and the generalized gradient approximation (GGA). The indirect band gap of magnesite is estimated to be 5.0 eV, which is underestimated by ～1.0 eV. The fundamental absorption edge, which indicates the exact optical transitions from occupied valence bands to the unoccupied conduction band, is estimated by calculating the photon energy dependent imaginary part of the dielectric function using scissors approximations (rigid shift of unoccupied bands). The optical properties show consistent results with the experimental calcite-type structure and also show a considerable optical anisotropy of the magnesite structure. The density of states and Mulliken population analyses reveal the bonding nature between the atoms.     

The electronic structure,electronic charge density and optical properties of the diamond-like semiconductor Ag2ZnSiS4

The electronic structure, electronic charge density and optical properties of the diamond-like semiconductor Ag₂ZnSiS₄ compound with the monoclinic structure have been investigated using a full-relativistic version of the full-potential augmented plane-wave method based on the density functional theory, within local density approximation (LDA), generalized gradient approximation (GGA), Engel–Vosko GGA (EVGGA) and modified Becke Johnson (mBJ) potential. Band structures divulge that this compound is a direct energy band gap semiconductor. The obtained energy band gap value using mBJ is larger than those obtained within LDA, GGA and EVGGA. There is a strong hybridization between Si-s and S-s/p, Si-p and Zn-s, Ag-s/p and Zn-s, and Ag-s and Ag-p states. The analysis of the site and momentum-projected densities shows that the bonding possesses covalent nature. The dielectric optical properties were also calculated and discussed in detail.     

Ab initio calculations study of the electronic, optical and thermodynamic properties of NaMgH3, for hydrogen storage

The structural stability, electronic structure, optical and thermodynamic properties of NaMgH₃ have been investigated using the density functional theory. Good agreement is obtained for the bulk crystal structure using both the local density approximation (LDA) and the generalized gradient approximation (GGA) for the exchange-correlation energy. It is found from the electronic density of states (DOS) that the valence band is dominated by the hydrogen atoms while the conduction band is dominated by Na and Mg empty states. Also, the DOS reveals that NaMgH₃ is a large gap insulator with direct band gap 3.4 eV. We have investigated the optical response of NaMgH₃ in partial band to band contributions and the theoretical optical spectrum is presented and discussed in this study. Optical response calculation suggests that the imaginary part of dielectric function spectra is assigned to be the interband transition. The formation energy for NaMgH₃ is investigated along different reaction pathways. We compare and discuss our result with the measured and calculated enthalpies of formation found in the literature.     

LiGaX2(X=S,Se, Te)的电子结构,光学和弹性性质的第一性原理计算

采用基于第一性原理的密度泛函理论赝势平面波方法,对LiGaX₂(X=S, Se, Te)的能带结构、态密度、光学以及弹性性质进行了理论计算. 能带结构计算表明LiGaS₂ 的禁带宽度为4.146 eV, LiGaSe₂ 的禁带宽度为3.301 eV, LiGaTe₂ 的禁带宽度为2.306 eV; 其价带主要由Ga-4p 层电子和X- np 层电子的能态密度决定; 同时也对LiGaX< 关键词： 电子结构 光学性质 弹性性质 LGX     

畸形钙钛矿DyMnO3电子结构与光学性质的第一性原理研究

基于密度泛函理论的广义梯度近似对畸形钙钛矿DyMnO₃的基态电子结构及光学性质进行计算和分析.结果表明优化的晶体结构参数与实验结果相符合,DyMnO₃具有非间接带隙大小为0.91 eV的能带结构,结合态密度分析了各元素价电子态的分布.计算分析包括介电常数,吸收系数,反射率等光学性质.     

An Improved Study of Electronic Band Structure and Optical Parameters of X-Phosphides (X=B,Al, Ga,In) by Modified Becke-Johnson Potential

We report the electronic band structure and optical parameters of X-Phosphides (X=B, Al,Ga,In) by first-principles technique based on a new approximation known as modified Becke-Johnson (mBJ). This potential is considered more accurate in elaborating excited states properties of insulators and semiconductors as compared to LDA and GGA. The present calculated band gaps values of BP, AlP, GaP, and InP are 1.867 eV, 2.268 eV, 2.090 eV, and 1.377 eV respectively, which are in close agreement to the experimental results. The band gap values trend in this study is as: Eg (mBJ-GGA/LDA)Eg (GGA) Eg (LDA). Optical parametric quantities (dielectric constant, refractive index, reflectivity and optical conductivity) which based on the band structure are also presented and discussed. BP, AlP, GaP, and InP have strong absorption in between the energy range 4-9eV, 4-7eV, 3-7eV, and 2-7eV respectively. Static dielectric constant, static refractive index and coefficient of reflectivity at zero frequency, within mBJ-GGA, are also calculated. BP, AlP, GaP, and InP show significant optical conductivity in the range 5.2-10eV, 4.3-8eV, 3.5-7.2eV, and 3.2-8eV respectively. The present study endorses that the said compounds can be used in opto-electronic applications, for different energy ranges.     

An Improved Study of Electronic Band Structure and Optical Parameters of X-Phosphides (X=B,Al, Ga,In) by Modified Becke-Johnson Potential

We report the electronic band structure and optical parameters of X-Phosphides (X=B, Al, Ga, In) by first-principles technique based on a new approximation known as modified Becke-Johnson (mBJ). This potential is considered more accurate in elaborating excited states properties of insulators and semiconductors as compared to LDA and GGA. The present calculated band gaps values of BP, AlP, GaP, and InP are 1.867 eV, 2.268 eV, 2.090 eV, and 1.377 eV respectively, which are in close agreement to the experimental results. The band gap values trend in this study is as: E_g(mBJ-GGA/LDA) > E_g(GGA) > E_g(LDA). Optical parametric quantities (dielectric constant, refractive index, reflectivity and optical conductivity) which based on the band structure are also presented and discussed. BP, AlP, GaP, and InP have strong absorption in between the energy range 4-9 eV, 4-7 eV, 3-7 eV, and 2-7 eV respectively. Static dielectric constant, static refractive index and coefficient of reflectivity at zero frequency, within mBJ-GGA, are also calculated. BP, AlP, GaP, and InP show significant optical conductivity in the range 5.2-10 eV, 4.3-8 eV, 3.5-7.2 eV, and 3.2-8 eV respectively. The present study endorses that the said compounds can be used in opto-electronic applications, for different energy ranges.     

Electronic and optical properties of defect chalcopyrite HgAl2Se4

The structural, electronic and optical properties of HgAl₂Se₄ are investigated using the full potential linear augmented plane wave method based on density functional theory. The calculated structural parameters using LDA are in excellent agreement with the available experimental result. The obtained energy band gap (2.24 eV) using EV-GGA approximation is in excellent agreement with experimental data (2.20 eV). Variation in the energy band gap as a function of the unit cell lattice parameter has been studied. The optical properties show a considerable anisotropy, which makes this compound very useful for various linear–nonlinear optical devices.     

First principles calculations of structural,electronic and optical properties of various phases of CaS

First principles calculations have been performed within the framework of density functional theory to investigate the structural, electronic and optical properties of all four possible B1, B2, B3 and B4 phases of CaS. Apart from the standard local density approximation (LDA) and GGA (PBE), a more accurate nonempirical density functional generalized gradient approximation (GGA), as proposed by Wu and Cohen [Phys. Rev. B 73, 235116 (2006)] for the exchange-correlation energy, E_XC, has been attempted in these calculations. Calculated electronic structure and the density of states are analyzed in terms of the contribution of Ca d states and S s and p states in determining the nature of the fundamental band gap in various phases. Reflectivity, R (ω), the real and imaginary part of the dielectric functions, ε(ω), have been calculated for all the phases and the results have been discussed and compared with the existing experimental data.     

Theoretical investigations of the structural,electronic and optical properties of Hg1−xCdxTe alloys

The structural, electronic and optical properties of mercury cadmium telluride (Hg_1?xCd_xTe; x = 0.0, 0.25, 0.5, 0.75) alloys are studied using density functional theory within full-potential linearized augmented plane wave method. We used the local density approximation (LDA), generalized gradient approximation (GGA), hybrid potentials, the modified Becke–Johnson (LDA/GGA)-mjb and Hubbard-corrected functionals (GGA/LDA + U), for the exchange-correlation potential (E_ex). We found that LDA functional predicts better lattice constants than GGA functional, whereas, both functionals fail to predict the correct electronic structure. However, the hybrid functionals were more successful. For the case of HgTe binary alloy, the GGA + U functional predicted a semi-metallic behaviour with an inverted band gap of ?0.539 eV, which is closest to the experimental value (?0.30 eV). Ternary alloys, however, are found to be semiconductors with direct band gaps. For the x = 0.25 and 0.50, the best band gaps are found to be 0.39 and 0.81 eV using LDA-mbj functional, whereas, the GGA-mbj functional predicted the best band gap of 1.09 eV for Hg_0.25Cd_0.75Te alloy, which is in a very good agreement with the experimental value (1.061 eV). The optical properties of the alloys are obtained by calculating the dielectric function ?(ω). The peaks of the optical dielectric functions are consistent with the electronic gap energies of the alloys.     

Theoretical Study of the Structural,Electronic, Chemical Bonding and Optical Properties of the A2<Subscript>1</Subscript><Emphasis Type="Italic">am</Emphasis> Orthorhombic SrBi<Subscript>2</Subscript>Ta<Subscript>2</Subscript>O<Subscript>9</Subscript>

The structural parameters, density of states, electronic band structure, charge density, and optical properties of orthorhombic SrBi₂Ta₂O₉ have been investigated using the plane-wave ultrasoft pseudopotential technique based on the first-principle density functional theory (DFT). The calculated structural parameters were in agreement with the previous theoretical and experimental data. The band structure showed an indirect (S to Γ) band gap with 2.071 eV. The chemical bonding along with population analysis has been studied. The complex dielectric function, refractive index, and extinction coefficient were calculated to understand the optical properties of this compound, which showed an optical anisotropy in the components of polarization directions (100), (010), and (001).     

Electronic and optical properties under pressure effect of alkali metal oxides

We report results of first-principles calculations for the electronic and optical properties under pressure effect of Li₂O, Na₂O, Ki₂O and Rb₂O compounds in the cubic antifluorite structure, using a full relativistic version of the full-potential augmented plane-wave plus local orbitals (FP-APW+lo) method based on density functional theory, within the local density approximation (LDA) and the generalized gradient approximation (GGA). Moreover, the alternative form of GGA proposed by Engel and Vosko (GGA-EV) is also used for band structure calculations. The calculated equilibrium lattices and bulk moduli are in good agreement with the available data. Band structure, density of states, and pressure coefficients of the fundamental energy gap are given. The critical point structure of the frequency dependent complex dielectric function is also calculated and analyzed to identify the optical transitions. The pressure dependence of the static optical dielectric constant is also investigated.     

Structural, electronic and optical properties of SrCl2 under hydrostatic stress

The results of first-principles theoretical study of the structural, electronic and optical properties of SrCl₂ in its cubic structure, have been performed using the full-potential linear augmented plane-wave method plus local orbitals (FP-APW+lo) as implemented in the WIEN2k code. In this approach both the local density approximation (LDA) and the generalized gradient approximation (GGA) are used for the exchange-correlation (XC) potential. Also we have used the Engel-Vosko GGA formalism, which optimizes the corresponding potential for band structure calculations. We performed these calculations with and without spin-orbit interactions. Including spin-orbit coupling cause to lifts the triple degeneracy at Γ point and a double degeneracy at X point. Results are given for structural properties. The pressure dependence of elastic constants and band gaps are investigated. The dielectric function, reflectivity spectra and refractive index are calculated up to 30 eV. Also we calculated the pressure and volume dependence of the static optical dielectric constant.     

Optoelectronic and thermoelectric properties of Zintl YLi3X2(X=Sb,Bi) compounds through modified Becke—Johnson potential

In the present work, we investigate the structural, optoelectronic and thermoelectric properties of the YLi₃X₂(X=Sb, Bi) compounds using the full potential augmented plane wave plus local orbital (FP-APW+lo) method. The exchange-correlation potential is treated with the generalized gradient approximation/local density approximation (GGA/LDA) and with the modified Becke-Johnson potential (TB-mBJ) in order to improve the electronic band structure calculations. In addition, the estimated ground state properties such as the lattice constants, external parameters, and bulk moduli agree well with the available experimental data. Our band structure calculations with GGA and LDA predict that both compounds have semimetallic behaviors. However, the band structure calculations with the GGA/TB-mBJ approximation indicate that the ground state of the YLi₃Sb₂ compound is semiconducting and has an estimated indirect band gap (Γ-L) of about 0.036 eV while the ground state of YLi₃Bi₂ compound is semimetallic. Conversely the LDA/TB-mBJ calculations indicate that both compounds exhibit semiconducting characters and have an indirect band gap (Γ-L) of about 0.15 eV and 0.081 eV for YLi₃Sb and YLi₃Bi₂ respectively. Additionally, the optical properties reveal strong responses of the herein materials in the energy range between the IR and extreme UV regions. Thermoelectric properties such as thermal conductivity, electrical conductivity, Seebeck coefficient, and thermo power factors are also calculated.     

First-principles study of electronic and optical properties of the optical non linear LiMoO3(IO3)

The electro-optical properties, including: energy density of states function, dielectric function, refraction coefficient, extinction coefficient, band structure, energy gap and optical conductance of LiMoO₃(IO₃) structure with single-crystal data are computed and discussed in this paper. The LDA + U and generalized gradient approximations (GGA) with the full-potential linearized augmented plane wave method (FP-LAPW) in the framework of density functional theory (DFT) are used to compute the energy gap and other properties of this structure by considering the orbital dependent potential for coupled d orbital brought from experimental results and the U is applied to the Mo d-manifold. The results of energy gap are 2.1 eV and 1.5 eV for LDA + U and for GGA methods, respectively, which LDA + U method result is very close to experimental results.     

立方钙钛矿RbZnF3电子、弹性和光学性质的第一性原理研究

基于密度泛函理论和赝势平面波方法研究了立方钙钛矿RbZnF3的电子结构和光学性质;利用静水有限应变技术计算研究了RbZnF3弹性常数Cij、体积弹性模量B和剪切模量G随压力的变化关系。基态下,RbZnF3晶格常数a和体积弹性模量B0计算值与实验值以及其他理论值一致。根据能带结构、总态密度以及分波态密度分析可知：基态下立方钙钛矿结构RbZnF3为间接带隙半导体材料,带隙为3.57eV,与其他计算结果比较,本文计算结果偏低,这是由于局域密度近似(LAD)或广义梯度近似(GGA)交换关联函数的局限性所致。基态下RbZnF3的Mulliken电荷分布和集居数说明：RbZnF3属于共价键和离子键所形成的混合键化合物;RbZnF3的电荷总数主要来源于Rb 4s和4p轨道,Zn 3d轨道,以及F 2s和2p轨道。电荷主要从Rb, Zn原子向F原子转移。同时,本文还计算研究了RbZnF3的光学介电函数、吸收系数、复折射率、能量损失谱和反射系数等光学性质。     

First principles study of the electronic and optical properties of SbTaO4

The electronic density of states (DOS), band structure and optical properties of orthorhombic SbTaO₄ are studied by first principles full potential-linearized augmented plane wave (FP-LAPW) method. The calculation is done in the framework of density functional theory with the exchange and correlation effects treated using generalized gradient approximation (GGA). We find an indirect band gap of 1.9 eV at the R→Γ symmetry direction of the Brillouin zone in SbTaO₄. It is observed that there is a strong hybridization between Ta-5d and O-2p electronic states which is responsible for the electronic properties of the system. Using the projected DOS and band structure we have analyzed the interband contribution to the optical properties of SbTaO₄. The real and imaginary parts of the dielectric function of SbTaO₄ are calculated, which correspond to electronic transitions from the valence band to the conduction band. The band gap obtained is in close agreement with the experimental data.     

Implementation of magnesium doping in SrTiO3 for correlating electronic,structural and optical properties: A DFT study

In present work the structural, electronic and optical properties of Pure and Mg-doped SrTiO₃ perovskites are calculated via implementing density functional theory calculation. To explore these properties, ultra-soft pseudo-potential (USP) and generalized gradient approximation (GGA) is used. The inclusion of Mg at the Sr site in SrTiO₃ not only affects the electronic band structure through generating new gamma points but also band gap increases from 1.788 eV to 1.866 eV. The introduction of Mg is well explained by the partial and total density of states which is affected by incorporating dopant in pure SrTiO₃. Optical properties also affected by doping. The absorption edge shifted towards lower value from 0.37 eV to 0.06 eV as Mg-doped in the pure SrTiO₃ that represented a red shift. The refractive index increases by doping as of 2.49 to 2.52.The doping of Mg in SrTiO₃ affects positively in electronic and optical properties and makes this material a very interesting candidate for optical devices.     

Structural, electronic and optical properties of orthorhombic distorted perovskite TbMnO3

This paper calculates the structural parameters, electronic and optical properties of orthorhombic distorted perovskite-type TbMnO3 by first principles using density functional theory within the generalised gradient approximation. The calculated equilibrium lattice constants are in a reasonable agreement with theoretical and experimental data. The energy band structure, density of states and partial density of states of elements are obtained. Band structures show that TbMnO3 is an indirect band gap between the O 2p states and Mn 3d states, and the band gap is of 0.48 eV agreeing with experimental result. Furthermore, the optical properties, including the dielectric function, absorption coefficient, optical reflectivity, refractive index and energy loss spectrum are calculated and analysed, showing that the TbMnO3 is a promising dielectric material.