Experimental demonstration of a dual-band metamaterial absorber

We present the design, simulation and fabrication of a dual-band metamaterial absorber. The designed structure consists of periodic composite metallic holes array and dielectric layer. The availability of absorption enhancement is verified by our measured results. Cavity and electrical resonances lead to these two absorption peaks at ${\mathit{\lambda }}_1=1.8\mathrm{\mu }\mathrm{m}$ and ${\mathit{\lambda }}_2=4.3\mathrm{\mu }\mathrm{m}$. Effects of structural parameters on absorption and resonant wavelengths have been experimentally surveyed. The average absorption can be increased by optimizing the structural parameters of the designed metamaterial absorber.     

YbNi2: A heavy fermion ferromagnet

Measurements of the magnetization and specific heat of YbNi₂ binary alloy are reported. The DC magnetic susceptibility displays a ferromagnetic behavior with a Curie temperature T_C=10.5 K, one of the highest found in Yb compounds. Moreover, the temperature dependence of the specific heat exhibits a lambda anomaly with a peak of 5.12 J/mol K at 9.4 K. The analysis also shows an additional magnetic contribution around 32 K stemming from the crystalline electric field of a quartet at ${\Delta }_1=72\mathrm{K}$ and a doublet at ${\Delta }_2=126\mathrm{K}$, according to the splitting of the Yb³⁺ ion in cubic symmetry. From the magnetic contribution to the specific heat, a relatively high Kondo temperature $T_K=27\mathrm{K}$ is estimated. Below the magnetic transition, the specific heat shows a huge value of the electronic coefficient ${\gamma }_{\mathit{LT}}=573\mathrm{mJ}/\mathrm{mol}\mathrm{K}$, which is a signature of a heavy fermion behavior. Therefore, this alloy is a fine example of enhanced ferromagnetism and heavy fermion behavior among Yb compounds.     

Electric field and temperature dependence of hole mobility in electroluminescent PDY 132 polymer thin films

The current density–voltage ($J\text{–}V$) behavior of polymer PDY 132 thin films has been investigated in hole-only device configuration, viz., ITO/poly(ethylene-dioxthiophene):polystyrenesulphonate (PEDOT:PSS)/PDY 132/Au, as a function of polymer (PDY) film thickness (150 nm and 200 nm) and temperature (290–90 K). Hole current density was found to follow two distinct modes of conduction, (i) low electric field region I: ohmic conduction where slope $～1$, and (ii) intermediate and high electric field region II: non ohmic conduction where slope $～2$. Region I has been attributed to the transport of intrinsic background charge carriers while region II has been found to be governed by space charge limited currents (SCLC) with hole mobility strongly dependent on electric field and temperature. The respective hole transport parameters determined from the SCLC regime, ${\mu }_{p0}$ is $3.7\times 10^{?3}{m}^2/Vs$, ${\mu }_p(0,T)$ is $3.7\times 10^{?8}{m}^2/Vs$, and zero field activation energy (${\Delta }_0$) of 0.48 eV is obtained.     

Luminescent, optical and color properties of natural rose quartz

Rose quartz is an interesting mineral with numerous impurities that have been studied by scanning electron microscopy (SEM), X-ray fluorescence (XRF), X-ray diffraction (XRD), cathodoluminescence (CL), ion beam luminescence (IBL), radioluminescence (RL), thermoluminescence (TL) and optical absorption (OA). After HF etching, rose quartz from Oliva de Plasencia (Caceres, Spain) shows under SEM the presence of other silicate phases such as dumortierite $[{\mathrm{Al}}_{6.5-7}({\mathrm{BO}}_3)({\mathrm{SiO}}_4{)}_3(\mathrm{O},\mathrm{OH}{)}_3]$. The OA spectrum of rose quartz suggests that these inclusions are the cause of coloration of rose quartz. The luminescence (CL, IBL, RL, TL) spectra behavior, at both room temperature and lower, confirms that the $\sim 340\mathrm{nm}$ emission could be associated with Si–O strain structures, including non-bridging oxygen or silicon vacancy–hole centers; the observed $\sim 400\mathrm{nm}$ emission could be associated with recombination of a hole trapped adjacent to a substitutional, charge-compensated aluminum alkali ion center; the $\sim 500\mathrm{nm}$ emission could be associated with substitutional ${\mathrm{Al}}^{3+}$ and the $\sim 700\mathrm{nm}$ peak could be associated with ${\mathrm{Fe}}^{3+}$ point defects in ${\mathrm{Si}}^{4+}$ sites. These results suggest that, while defect properties of rose quartz are not greatly dissimilar to those of purer forms of quartz and silica, further research seems necessary to determine criteria for the evolution of the newly-formed self-organized microstructures in the rose quartz lattice under irradiation.     

Thin film semiconductor nanomaterials and nanostructures prepared by physical vapour deposition: An atomic force microscopy study

Amorphous/nanocrystalline ${\mathrm{SiO}}_x/\mathrm{CdSe}$, ${\mathrm{GeS}}_2/\mathrm{CdSe}$, ${\mathrm{SiO}}_x/\mathrm{ZnSe}$ and $\mathrm{Se}/\mathrm{CdSe}$ amorphous multilayers (MLs) were grown by consecutive physical vapour deposition of the constituent materials at room substrate temperature. A step-by-step manner of deposition was applied for the preparation of each layer ($2–10\mathrm{nm}$ thick) of MLs. Surface morphology has been investigated by atomic force microscopy (AFM) in order to get information about ML interfaces. For a scanned area of $3.4\times 4\mathrm{\mu }{\mathrm{m}}^2$ ${\mathrm{SiO}}_x/\mathrm{CdSe}$ and ${\mathrm{GeS}}_2/\mathrm{CdSe}$ MLs showed surface roughness which is around three times greater than the roughness of ${\mathrm{SiO}}_x/\mathrm{ZnSe}$ MLs. This observation has been connected with effects of both film composition and deposition rate. For a scanned area of $250\times 250{\mathrm{nm}}^2$ the roughness determined in all MLs displayed close values and a similar increase with the ML period. The latter has been related to the flexible structure of amorphous materials. The AFM results, in good agreement with previous X-ray diffraction and high resolution electron microscopy data, indicate that the application of step-by-step physical vapour deposition makes possible fabrication of various amorphous/nanocrystalline MLs with smooth interfaces and good artificial periodicity at low substrate temperatures.     

Spin-glass behavior in the antiperovskite manganese nitride Mn3CuN codoped with Ge and Si

Antiperovskite manganese nitrides ${\mathrm{Mn}}_3\left({\mathrm{Cu}}_{0.6}{\mathrm{Si}}_x{\mathrm{Ge}}_{0.4?x}\right)N$ ($x=0.05$, 0.1, 0.15) were prepared and their negative thermal expansion, magnetic and specific heat properties were investigated. A frozen state with a freezing temperature was found at ～207 K in ${\mathrm{Mn}}_3\left({\mathrm{Cu}}_{0.6}{\mathrm{Si}}_{0.15}{\mathrm{Ge}}_{0.25}\right)N$. This indicates that ${\mathrm{Mn}}_3\left({\mathrm{Cu}}_{0.6}{\mathrm{Si}}_{0.15}{\mathrm{Ge}}_{0.25}\right)N$ exhibits a spin glass state at low temperatures. We discussed the cause of spin glass behavior and correlated this spin glass behavior with broadening of the negative thermal expansion operation-temperature window of the manganese nitrides ${\mathrm{Mn}}_3\left({\mathrm{Cu}}_{0.6}{\mathrm{Si}}_{0.15}{\mathrm{Ge}}_{0.25}\right)N$.     

Pressure dependence of negative thermal expansion in Zr2(WO4)(PO4)2

Negative thermal expansion materials can experience significant stresses when they are used in composites. Under ambient conditions Zr₂(WO₄)(PO₄)₂ displays anisotropic negative thermal expansion (NTE) (${\alpha }_v=?14.0\left(10\right)\times 10^{?6}{K}^{?1}$, ${\alpha }_a=?7.9\left(5\right)\times 10^{?6}{K}^{?1}$, ${\alpha }_b=2.5\left(5\right)\times 10^{?6}{K}^{?1}$, ${\alpha }_c=?8.7\left(2\right)\times 10^{?6}{K}^{?1}$ at 0 GPa). The effect of hydrostatic pressure on its thermal expansion characteristics was investigated by neutron diffraction between 300 and 60 K at pressures up to 0.3 GPa. No phase transitions were observed in the pressure and temperature range examined. The material was found to have a bulk modulus, B₀, of 61.3(8) GPa at ambient temperature, and unlike some other NTE materials, pressure had no detectable effect on thermal expansion (${\alpha }_v=?14.2\left(8\right)\times 10^{?6}{K}^{?1}$, ${\alpha }_a=?7.9\left(3\right)\times 10^{?6}{K}^{?1}$, ${\alpha }_b=2.9\left(5\right)\times 10^{?6}{K}^{?1}$, ${\alpha }_c=?9.2\left(2\right)\times 10^{?6}{K}^{?1}$ at 0.3 GPa).     

Application of medium energy plasma focus device in study of radioisotopes

Pulsed neutrons generated in a plasma focus device are used for the thermal neutron activation analysis (TNAA) of selected three elements having widely different half-lives varying from a few seconds to a few days [Dysprosium (Dy), Manganese (Mn) and Gold (Au)]. Neutron pulse having strength of $(1.2\pm 0.3)\times {10}^9$ neutrons/pulse with a pulse width of $46\pm 5\text{ns}$ is produced by “MEPF-12” device operated at a filling gas (deuterium + 0.5% krypton) pressure of 3 mbar. The fast 2.45 MeV D–D neutrons are thermalized before irradiating the sample. The decay gammas from the radioisotopes ^165mDy ($T_{1/2}=1.26\text{min.}$), ⁵⁶Mn ($T_{1/2}=2.58\text{hrs.}$), and ¹⁹⁸Au ($T_{1/2}=2.69\text{days}$) produced via reactions, ¹⁶⁴Dy($n,\gamma$)^165mDy, ⁵⁵Mn($n,\gamma$) ⁵⁶Mn, and ¹⁹⁷Au($n,\gamma$) ¹⁹⁸Au respectively are counted off-line in a lead shielded well type $76\times 76{\text{mm}}^2$ NaI(Tl) detector coupled to a calibrated 2048 channel analyzer. The values of half-lives evaluated from the measured decay gammas, $1.43\pm 0.3\text{min.}$, $2.56\pm 0.5\text{hrs.}$ and $2.84\pm 0.6\text{days}$ respectively for the radioisotopes of Dy, Mn and Au, are seen to be close to the values reported in literature.     

Persistent luminescence and synchrotron radiation study of the Ca2MgSi2O7:Eu2+,R3+ materials

The tetragonal ${\mathrm{Ca}}_2{\mathrm{MgSi}}_2{\mathrm{O}}_7$:${\mathrm{Eu}}^{2+},{\mathrm{R}}^{3+}$ persistent luminescence materials were prepared by a solid state reaction. The UV excited and persistent luminescence was observed in the green region centred at 535 nm. Both luminescence phenomena are due to the same ${\mathrm{Eu}}^{2+}$ ion occupying the single ${\mathrm{Ca}}^{2+}$ site in the host lattice. The ${\mathrm{R}}^{3+}$ codoping usually reduced the persistent luminescence of ${\mathrm{Ca}}_2{\mathrm{MgSi}}_2{\mathrm{O}}_7$:${\mathrm{Eu}}^{2+}$, which differs from the ${\mathrm{M}}_2{\mathrm{MgSi}}_2{\mathrm{O}}_7$:${\mathrm{Eu}}^{2+}$ $(\mathrm{M}=\mathrm{Sr},\mathrm{Ba})$ and ${\mathrm{MAl}}_2{\mathrm{O}}_4$:${\mathrm{Eu}}^{2+}$ $(\mathrm{M}=\mathrm{Ca},\mathrm{Sr})$ materials. Only the ${\mathrm{Tb}}^{3+}$ ion enhanced slightly the persistent luminescence. With the aid of synchrotron radiation, the band gap energy of ${\mathrm{Ca}}_2{\mathrm{MgSi}}_2{\mathrm{O}}_7$:${\mathrm{Eu}}^{2+}$ was found to be about 7 eV that is very similar to those of the ${\mathrm{M}}_2{\mathrm{MgSi}}_2{\mathrm{O}}_7$:${\mathrm{Eu}}^{2+}$ $(\mathrm{M}=\mathrm{Sr},\mathrm{Ba})$ materials. Thermoluminescence results suggested that the ${\mathrm{R}}^{3+}$ ions might act as electron traps, but only the TL peaks created by ${\mathrm{Tm}}^{3+}$ and ${\mathrm{Sm}}^{3+}$ can be found in the temperature range accessible. Lattice defects (e.g. oxygen vacancies) are also important, since the same main thermoluminescence peak was observed at about $100{}^{\circ }\mathrm{C}$ with and without ${\mathrm{R}}^{3+}$ codoping.