Effect of the annealing temperature of thin Hf0.3Zr0.7O2 films on their energy storage behavior

With increasing annealing temperature (T_anneal), the magnitude of the electric fields for the antiferroelectric‐to‐ferro‐electric (E_AF) and ferroelectric‐to‐antiferroelectric (E_FA) transition of a 9.2 nm thick Hf_0.3Zr_0.7O₂ film decreased. The energy storage densities of the Hf_0.3Zr_0.7O₂ films crystallized at 400 °C, 500 °C, and 600 °C were as large as 42.2 J/cm³, 40.4 J/cm³, and 28.3 J/cm³, respectively, at the electric field of 4.35 MV/cm. The maximum dielectric constant of the Hf_0.3Zr_0.7O₂ film crystallized at 600 °C was the largest (～46) as it had the smallest E_AF and E_FA, whereas the leakage current density of the film crystallized at 400 °C was the smallest. The 400 °C of T_anneal was the optimum condition for energy storage application. (© 2014 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

Influences of Cu composition and sintering condition in Bi-2223 tapes using Ag---Cu alloy sheath doped with Ti, Zr or Hf

Bi-2223 Ag---Cu alloy sheathed tapes doped with Ti, Zr or Hf were fabricated by a powder-in-tube technique using intermediate uniaxial presses and variations in total sintering times. Increasing Cu compositions in the Ag---Cu alloy sheath doped with certain elements into the sheath, combined with appropriate total sintering times were found to lead good superconducting properties. Furthermore, the best total sintering time varied according to the amount of Cu in the Ag---Cu alloy sheath and the existence of doping elements. A transport critical current density, J_c, of 4.1 × 10⁴ A/cm² at 4.2 K, 14 T and 2.2 × 10⁴ A/cm² at 77 K, 0 T was achieved in Ag-10 at% Cu-0.1 at% Hf sheathed Bi-2223 tapes sintered for total 200 h.     

TDPAC studies of Hf doped YBCO

Time differential perturbed angular correlation measurements of the 133–482 keVγ-γ cascade of¹⁸¹Ta in Hf-doped YBa₂Cu₃O_7−x are presented. The¹⁸¹Hf precurser nuclei are incorporated into the sample by thermal neutron irradiation. Two quadrupole interaction frequencies are observed in the as-irradiated sample:v _Q1=161±10 MHz with intensityf ₁=75%, asymmetry parameterη ₁=0.32 and damping parameter Λ₁=0.42, andv _Q2=1108±40 MHz withf ₂=25%,η ₂=0.62, and Λ₂=0.60. On annealing the sample in air at various temperaturesT _a and quenching to room temperature,f ₁ remained nearly constant forT _a<600°C andv _Q1 for all annealing temperatures indicating that these are insensitive to oxygen stoichiometry. This frequency is interpreted to be due to¹⁸¹Hf substitutingY sites. BeyondT _a=600°C,f ₁ increased and reached a constant value of 90% forT _a=800°C. The value ofv _Q2 showed a slight variation between 1086 and 1160 MHz, whilef ₂ remained nearly constant at 25% forT _a<600°C. This component is identified to be due to¹⁸¹Hf substituting Cu 1 sites in the Cu-O chains of YBCO. Above 600°Cv _Q2 decreased and reached a value of 808 MHz beyond 750°C.     

The 181Hf/181Ta Probe in the Li and Nb Sites of Congruent Linbo3 Co-doped with Mg and Cr Ions Studied by γ–γ PAC

The results reported in this work show the relevance of the lithium deficiency for the Li lattice site occupation of dopants in congruent lithium niobate crystals co-doped with 0.1 mol% Cr₂O₃ and different concentrations of HfO₂, up to 3 mol%. The same behavior is observed in a crystal doped with 1 mol% of HfO₂ and co-doped with 4 mol% MgO where after annealing most of the Hf/Ta probes occupy the Nb lattice site.     

三元层状陶瓷M-Al-N(M=Ti,Zr,Hf)的结构及力学性质的第一性原理模拟

基于第一性原理方法,探索M-Al-N（M=Ti,Zr,Hf）结构的稳定性,计算其力学性质.计算M-Al-N化合物的能量,发现除实验已知的结构Ti₂AlN和Ti₄AlN₃、Zr₂AlN、Hf₂AlN外,还存在两种新的热力学稳定结构Zr₄AlN₃、Hf₄AlN₃.弹性常数和声子谱的计算,表明这两个结构是力学稳定和晶格动力学稳定的.计算M₂AlN和M₄AlN₃的力学性质,发现它们具有高的体模量、剪切模量、弹性模量、维氏硬度等;分析其力学性质随组分比例、组成元素的变化规律,为该类材料的选择和应用提供理论依据.最后计算M₂AlN和M₄AlN₃的电子态密度和分态密度、电子密度分布、Mulliken群分析等.     

替位杂质对贵金属(111)表面稳定性影响的分子动力学研究

采用嵌入原子方法的原子间相互作用势，通过分子动力学方法研究了过渡族金属Cu，Ag，Au，Ni，Pd，Pt(111)表面的相互替位掺杂对表面稳定性的影响，计算了替位掺杂体系的表面能与表面空位形成能，探讨了影响表面稳定性的因素及其变化规律. 计算表明：替位杂质对表面能变化的影响主要是替位杂质的凝聚能和原子半径，而影响空位形成能变化的原因除凝聚能和原子半径外，合金溶解热具有重要的作用. 此外，通过替位杂质导致的体系表面能变化对合金体系的偏析行为进行了预测，理论预测与实验结果符合很好. 关键词： 替位杂质 贵金属 表面能 表面空位形成能     

非均匀磁场和杂质磁场对自旋1系统量子关联的影响

通过负值度和测量诱导的扰动, 研究了非均匀磁场和杂质磁场对自旋为1的Heisenberg系统量子关联的影响. 研究发现非均匀磁场的增加会降低纠缠, 但也可用来产生纠缠, 并且会提高临界非线性作用K_c的值, 测量诱导的扰动的临界磁场要高于负值度的临界磁场, 而且测量诱导的扰动不会随着非线性作用|K| 的减小而消失, 它能全面反映量子关联的存在. 研究还发现, 不同杂质磁场对测量诱导的扰动的影响彼此间无交叉. 杂质磁场下, 相互作用|J| 必须小于非线性作用|K| 才会有纠缠存在, 但是测量诱导的扰动却可以在相互作用|J| 大于非线性作用|K| 时依然存在, |J| 与|K| 相同时只是测量诱导的扰动的最小取值点. 此外, 系统粒子数目对量子关联也具有重要影响.     

烧结温度和掺杂浓度对Y_4Zr_3O_(12)∶Eu~(3+)荧光粉发光性质的影响

采用溶胶凝胶法制备了Y_4Zr_3O_(12)∶Eu~(3+)纳米荧光粉,分别采用XRD、TEM和荧光光谱仪对样品的结构、形貌和发光性能进行了表征,探讨了烧结温度和Eu~(3+)掺杂浓度对荧光粉发光性能的影响。结果表明,样品可以被394 nm和467 nm的激发光有效激发。样品的最佳烧结温度和Eu~(3+)离子的最佳掺杂摩尔分数分别为1 400℃和18%。浓度猝灭主要归因于电偶极-电偶极相互作用。     

切向气流作用下激光对典型金属靶的辐照效应

总结了亚音速切向气流在激光辐照典型金属靶过程中所起的作用,提出气流效应主要包括增大靶与外界环境的对流换热强度;移除靶表面的熔化层,加快烧蚀速率;促进靶的氧化反应,有利于靶的烧蚀;空气动力学效应导致靶在熔化之前就可发生破裂等几个方面。对上述气流效应进行了详尽的分析,同时指出应对氧化反应及热力联合效应进行更广泛的实验研究,获得更明确的规律性认识,以便建立统一的物理数学模型,从而为实际的工程应用提供参考。     

Perturbed angular correlation studies of Ta hyperfine interactions in Hf-Ni and Zr-Ni compounds

The hyperfine interaction experienced by ¹⁸¹Ta nuclei in the intermetallic compounds ZrNi₅, HfNi₅, and Hf₂Ni₇ has been investigated by perturbed angular correlation (PAC) spectroscopy. At temperatures T≥15 K the ¹⁸¹Ta angular correlation of appropriately annealed ZrNi₅ and HfNi₅ is unperturbed, indicating the absence of a magnetic hyperfine interaction. This observation rules out the possibility of spontaneous magnetic order of ZrNi₅ and HfNi₅ recently proposed in the literature. The temperature dependence of the electric quadrupole interaction of ¹⁸¹Ta in Hf₂Ni₇ suggests the existence of a reversible phase transformation at T≥500 K.     

切向气流作用下激光对典型金属靶的辐照效应

总结了亚音速切向气流在激光辐照典型金属靶过程中所起的作用,提出气流效应主要包括增大靶与外界环境的对流换热强度;移除靶表面的熔化层,加快烧蚀速率;促进靶的氧化反应,有利于靶的烧蚀;空气动力学效应导致靶在熔化之前就可发生破裂等几个方面。对上述气流效应进行了详尽的分析,同时指出应对氧化反应及热力联合效应进行更广泛的实验研究,获得更明确的规律性认识,以便建立统一的物理数学模型,从而为实际的工程应用提供参考。