Optical constants of Cu(In0.7Ga0.3)5Se8 and Cu(In0.4Ga0.6)5Se8 crystals

Variable angle spectroscopic ellipsometry has been applied to characterize the optical constants of bulk Cu(In_0.7Ga_0.3)₅Se₈ and Cu(In_0.4Ga_0.6)₅Se₈ crystals grown by the Bridgman method. The spectra were measured at room temperature over the energy range 0.8-4.4 eV. Adachi’s model was used to calculate the dielectric functions as well as the spectral dependence of complex refractive index, absorption coefficient, and normal-incidence reflectivity. The calculated data are in good agreement with the experimental ones over the entire range of photon energies. The parameters such as strength, threshold energy, and broadening, corresponding to the E₀, E_1A, and E_1B interband transitions, have been determined using the simulated annealing algorithm.     

Relationships between lattice energy and electronic polarizability of AB crystals

The correlations between the electronic polarizability, determined from Clausius-Mosotti equation based on dielectric constant ε, and the lattice energy density u have been established for A^NB^8-N crystals, such as the systems of rock salt crystals (group I-VII, II-VI) and tetrahedral coordinated crystals (group II-VI, III-V). For the A^NB^8-N crystals systems, our present conclusions suggest that lattice energy density u decreases exponentially with increasing electronic polarizability, and the normal mathematical expression between lattice energy density u and electronic polarizability is u = pα^q, p and q depend on the type of crystals. For the same cation binary A^NB^8-N crystals systems, curve fitting equations have been obtained, and the relevant squares of the correlation coefficient R² are larger than 0.99, which show all lattice energy density u are in good exponential relation with electronic polarizability. These empirical equations will give more information on calculating lattice energy or electronic polarizability. New data of lattice energy have been calculated on the above equation u = pα^q, and a good linear trend in the calculating values along with the Zhang’s values has been obtained.     

Optical properties of BiSBr and BiSeBr crystals

Optical properties of BiSBr and BiSeBr crystals were investigated by the full potential linearized augmented plane wave (FP-LAPW) method with density-functional theory (DFT). The complex dielectric function and optical constants, such as optical absorption coefficient, refractive index, extinction coefficient, energy-loss spectrum and reflectivity, were calculated and compared in the energy range of 0–30 eV. Origin of anisotropic behavior of optical spectra was also discussed. The plasmon energy ?ω_p was estimated to be 18 eV for BiSeBr and 20 eV for BiSBr crystal.     

Temperature dependence of the Urbach energy in ordered defect compounds Cu-III3-VI5 and Cu-III5-VI8

Two previous models used with success in Cu-III-VI₂ semiconductors have been employed to study the temperature dependence of the Urbach energy in ordered compounds Cu-III₃-VI₅ and Cu-III₅-VI₈. The model which contains two variable parameters seems to explain better the data over the whole temperature range studied. However, the ordered vacancy or the donor acceptor defect pair in the cation sublattice provides new features in these compounds that need further study.     

Optical characterization of InGaAsN/GaAsN/GaAs quantum wells with InGaP cladding layers

Optical properties of InGaAsN/GaAs and InGaAsN/GaAsN/GaAs quantum well structures with InGaP cladding layers were studied by photoreflectance at various temperatures. The excitonic interband transitions of the InGaAsN/GaAsN/GaAs QW systems were observed in the spectral range above hν=E_g(InGaAsN). The confinement potential of the system with strain compensating GaAsN barriers became one step broader, thus more quantum states and larger optical transition rate were observed. A matrix transfer algorithm was used to calculate the subband energies numerically. Band gap energies, effective masses were adopted from the band anti-crossing model with band-offset values adjusted to obtain the subband energies to best fit the observed optical transition features. A spectral feature below and near the GaAs band gap energy from GaAs barriers is enhanced by the GaAs/InGaP interface space charge accumulation induced internal field.     

Optical and magneto-optical spectra of europium-doped strontium tetraborate single crystals

Optical absorption, luminescence, magnetic circular dichroism and Faraday rotation spectra of Sr_0.95Eu_0.05B₄O₇ single crystals are studied. The crystal field parameter for europium ions is found to be equal to 790 cm⁻¹. Excitation spectrum of luminescence strongly differs from that of low-doped polycrystalline strontium tetraborate. The Verdet constant in the ultraviolet is comparable to that of terbium gallium garnet in the visible.     

Optical absorption spectrum of Cu2O-CaO-P2O5 glasses

Homogeneous CaO-P₂O₅ and Cu₂O-CaO-P₂O₅ glasses were prepared using a melt-quenched method under controlled conditions. The binary glasses were found to be colourless and transparent while the ternary glasses changed from light green to dark green as the Cu₂O content increased. From the absorption edge studies, the values of the optical band gap, E_opt and Urbach energy, ΔE were evaluated. The position of the absorption edge and hence the optical band gap were found to depend on the glass composition. Analysis of the optical band gap shows that for the binary glasses, the value increases as the content of CaO decreases, while for the ternary glasses, the value of the optical band gap increases as the content of the Cu₂O decreases. The density of the glasses was also measured and was found to increase with the increase in CaO and Cu₂O contents.     

Far-infrared dielectric functions and phonon spectra of alloys determined by spectroscopic ellipsometry

We have used spectroscopic ellipsometry to determine the complex dielectric function of a series of ternary Be_xZn_1−xTe thin films grown by molecular beam epitaxy. The II–VI semiconductor alloys were grown on InP substrates that had an InGaAs buffer layer. After the growth, X-ray diffraction experiments were performed in order to determine the alloy concentration. A standard inversion technique was used to obtain the dielectric functions from the measured ellipsometric spectra, obtained between 2000 nm (5000 cm⁻¹) and 40,000 nm (250 cm⁻¹). By modelling the dielectric function as a collection of oscillators, representing longitudinal and transverse optical phonons of the Be_xZn_1−xTe lattice, we were able to recover the phonon spectra for this alloy system. It is argued that the additional phonon modes that are obtained from ellipsometry are best understood from the recently-proposed percolation model.     

Chiral optical absorption bands in [ ]Cd1−x Mnx Ga2S4 semiconducting compound

[ ]Cd_1−x Mn_x Ga₂S₄ is a semimagnetic semiconductor and it has revealed an exceptional property namely ‘optical activity‘. Therefore, a spectroscopic investigation of chiral absorption bands has been carried out with the view to examine the role of d*-d states of manganese atoms. It has been found that inner transitions of Mn⁺⁺ dominate the spectral region with a special feature, indicating that these transitions show the presence of a substantial contribution from the magnetic dipole moment which rotates the electric vector of the incident polarized radiation. The origin is associated to the lack of a symmetry center caused by the ordered vacancies in this defect compound.     

Exciton spectra, valence band splitting, and energy band structure of CuGaXIn1−XS2 and CuGaXIn1−XSe2 crystals

Exciton spectra are studied in CuGa_XIn_1−XS₂ solid solutions by means of photoreflectivity and wavelength modulation spectroscopy at liquid nitrogen temperature. The exciton parameters, dielectric constants, and free carrier effective masses are deduced from experimental spectra by calculations in the framework of a model taking into account the spatial dispersion and the presence of a dead-layer. The crystal field and spin orbit valence band splitting is calculated as a function of X taking into account the energy position of excitonic lines. The energy band structure of CuGa_XIn_1−XS₂ and CuGa_XIn_1−XSe₂ compounds is derived from optical spectra at photon energies higher than the fundamental band gap. The energies of optical transitions are tabulated for X values from 0 to 1.     

Optical properties of InGaN/GaN double quantum wells with varying well thickness

The optical properties and recombination kinetics of the InGaN/GaN double quantum well (DQW) structures with different well thickness (L_w) have been studied by means of photoluminescence (PL), time-resolved PL, and cathodoluminescence (CL) measurements. With increasing quantum well thickness up to 4 nm, the PL emission energy decreases and the blueshift of the PL emission energy increases with increasing excitation density. On the other hand, the PL emission energy of the DQWs with L_w=16 nm is higher than that of the DQWs with L_w=4 nm, and is independent of the excitation density. With increasing L_w from 1 to 4 nm, the PL decay times increase. In contrast, the decay times of 16 nm DQWs are faster than those of 4 nm DQWs. These different results for 16 nm DQWs such as the blueshift of the emission energy, the decrease of the excitation density dependence, and the increase of recombination rate can be ascribed to the relaxation of the piezoelectric field. We also observed the inhomegeneity in the CL spectra of the DQWs with L_w=1 nm on 1 μm scale.     

Optical spectra and energy levels of the Cr ions in MWO4 (M=Mg, Zn, Cd) and MgMoO4 crystals

Single crystals of MWO₄ (M=Mg, Zn, Cd) and MgMoO₄ doped with Cr³⁺ have been grown by the flux growth method. Their optical spectra have been systematically measured and assigned on the basis of the classical Ligand Field Theory. The exchange charge model of the crystal field has then been applied to calculate the crystal field parameters (CFPs) and the energy levels of the Cr³⁺ ion in all studied crystals. These are in reasonable agreement with the experimental data. Systematic trends in the CFPs values, crystal field splittings and Racah parameters have been evidenced and their relation with sizes and symmetry properties of the host cavities occupied by Cr³⁺ has been pointed out.     

Electronic structure and optical properties of RbPb2Br5

We report on density functional theory (DFT) calculations of the total and partial densities of states of rubidium dilead pentabromide, RbPb₂Br₅, employing the augmented plane wave+local orbitals (APW+lo) method as incorporated in the WIEN2k package. The calculations indicate that the Pb 6s and Br 4p states are the dominant contributors to the valence band: their main contributions are found to occur at the bottom and at the top of the band, respectively. Our calculations reveal that the bottom of the conduction band is formed predominantly from contributions of the unoccupied Pb 6p states. Data of total DOS derived in the present DFT calculations are found to be in agreement with the experimental X-ray photoelectron valence-band spectrum of this compound. The predominant contributions of the Br 4p states at the top of the valence band of rubidium dilead pentabromide are confirmed by comparison on a common energy scale of the X-ray emission band representing the energy distribution of the valence Br p states and the X-ray photoelectron valence-band spectrum of the RbPb₂Br₅ single crystal. Main optical characteristics of RbPb₂Br₅, such as dispersion of the absorption coefficient, real and imaginary parts of dielectric function, electron energy-loss spectrum, refractive index, extinction coefficient and optical reflectivity are explored for RbPb₂Br₅ by the DFT calculations.     

Optical properties of GaNAs/GaAs triple quantum well structures

Optical properties of the GaNAs/GaAs triple quantum well structures were characterized by using photoreflectance and photoluminescence spectroscopy at different temperatures. The excitonic interband transitions of the triple quantum well systems were observed in the spectral range above hν=E_g(GaN_xAs_1−x). A matrix transfer algorithm was used to match the GaN_xAs_1−x/GaAs boundary conditions and calculate the triple quantum well subband energies numerically for theoretical comparison. The internal electric field in the system was extracted from Franz-Keldysh oscillations in the photoreflectance spectra. The influences of the annealing treatment on the transition energy and the internal electric field are also analyzed.     

Optical and electronic polarizability investigation of Nd-doped soda-lime silicate glasses

This paper reports on different physical and optical properties of Nd³⁺-doped soda-lime silicate glass. The glasses containing Nd³⁺ in (65−x)SiO₂:25Na₂O:10CaO:xNd₂O₃ (where x=0.0-5.0 mol%) have been prepared by the melt-quenching method. In order to understand the role of Nd₂O₃ in these glasses the density, molar volume, refractive index and optical absorption were investigated. The results show that the density and molar volume of the glasses increase with an increase in Nd₂O₃ concentration and consequently generate more non-bridging oxygen (NBOs) into glass matrix. The optical absorption spectra were measured in the wavelength range from 300 to 700 nm and the optical band gaps were determined. It was found that the optical band gap decreases with an increase in Nd₂O₃ concentration. On the basis of the measured values of density and refractive index, the Nd³⁺ ion concentration in glasses, the polarizability of oxide ions and optical basicity were theoretically determined.     

Optical, electrical and photovoltaic properties of thermally annealed PPHT:DDE blend thin films

We have investigated the optical, electrical and photovoltaic properties of devices based on 1,2-diazoamino diphenyl ethane (DDE) and poly(3-phenyl hydrazone thiophene) (PPHT):DDE blend. It is observed from the J-V characteristics of the Al/DDE/ITO (ITO—indium tin oxide) device that the electron current injected from Al contact was shown to be space charge limited (SCL), indicating that Al forms nearly ohmic contact for electron injection into lowest unoccupied molecular orbital (LUMO) of DDE. The effect of thermal annealing and composition, on the optical, electrical and photovoltaic response of blend of PPHT and DDE sandwiched between a transparent ITO electrode and an Al back contact are investigated. The observed absorption quenching in the PPHT:DDE blend is attributed to the disordering of PPHT chains and charge transfer between PPHT and DDE as evidenced by FTIR spectra. The observed red shift in the absorption peak on thermal annealing is due to the improvement in the ordering and increases in conjugation length in PPHT. The observed dark current-voltage curves agree well with trap-controlled SCL transport theory. The photophysics of the blend material and influence of thermal annealing on the performance and morphology of these devices were discussed. Annealing process results in the formation of PPHT:DDE complex and increase in the ordering of polymer chain, that increases the incident photon to current efficiency (IPCE) and power conversion efficiency of the photovoltaic devices.     

Thermally stimulated current measurements in undoped Ga3InSe4 single crystals

The trap levels in nominally undoped Ga₃InSe₄ crystals were investigated in the temperature range of 10-300 K using the thermally stimulated currents technique. The study of trap levels was accomplished by the measurements of current flowing along the c-axis of the crystal. During the experiments we utilized a constant heating rate of 0.8 K/s. Experimental evidence is found for one hole trapping center in the crystal with activation energy of 62 meV. The analysis of the experimental TSC curve gave reasonable results under the model that assumes slow retrapping. The capture cross-section of the trap was determined as 1.0×10⁻²⁵ cm² with concentration of 1.4×10¹⁷ cm⁻³.     

Optical, thermal, dielectric and ferroelectric behaviour of sodium acid phthalate (SAP) single crystals

Sodium acid phthalate (SAP), an efficient semi-organic crystal having dimensions 17×8×2 mm³ has been grown from aqueous solution by slow evaporation technique at room temperature within the period of 2 weeks. The lattice parameters of the grown crystals were determined using single-crystal X-ray diffraction analysis. The presence of functional groups was estimated qualitatively by Fourier transform infrared (FTIR) analysis. The band gap energy was determined using optical absorption studies. The TG/DTA analysis reveals that the SAP crystal is thermally stable up to 141.6 °C. The dielectric constant and dielectric loss was studied as a function of frequency and the corresponding activation energy (E_a) has been calculated for the grown crystal. Scanning electron microscope studies enunciate the ferroelectric domain patterns of the SAP crystal. Ferroelectric property of the grown crystal was confirmed by hysteresis loop studies.     

Variation of spark-processing parameters on the photoluminescence properties of spark-processed silicon

Electrical and physical parameters, which influence the photoluminescence (PL) properties of spark-processed silicon (sp-Si), were systematically varied in order to obtain optimal PL emission. Among these parameters are the average spark current, the pulse width of the spark events, the frequency of the pulses, the processing time, the electrode diameter, the distance between the electrodes, the spark-processing environment, and the gas ambient pressure. It was found that for optimal PL emission the processing current needs to be between 20 and 40 mA, and the pulse frequency of the sparks between 10 and 15 kHz. Further, the N₂/O₂ ratio of the processing environment needs to be about 7:3 and the ambient gas pressure and the processing time as large as feasible. The conditions that are favorable for green PL are a small pulse width, a small counter electrode diameter, a small gap between electrodes, a relatively large nitrogen concentration in the processing chamber, and a comparatively large spark frequency. In the opposite cases, a UV/blue PL is predominantly observed. The results are discussed in terms of various thermal effects on the resulting molecules or defects, which are believed to be important for the PL emission.