Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

The atomic layer chemical vapor deposition (ALCVD) deposited Al₂O₃ and ZrO₂ films were investigated by ex situ X-ray photoelectron spectroscopy. The thickness dependence of band gap and valence band alignment was determined for these two dielectric layers. For layers thicker than 0.9 nm (Al₂O₃) or 0.6 nm (ZrO₂), the band gaps of the Al₂O₃ and ZrO₂ films deposited by ALCVD are 6.7±0.2 and 5.6±0.2 eV, respectively. The valence band offsets at the Al₂O₃/Si and ZrO₂/Si interface are determined to be 2.9±0.2 and 2.5±0.2 eV, respectively. Finally, the escape depths of Al 2p in Al₂O₃ and Zr 3p3 in ZrO₂ are 2.7 and 2.0 nm, respectively.     

Band alignment at the interfaces of Al2O3 and ZrO2-based insulators with metals and Si

Internal photoemission of electrons was used to determine the band alignment in metal (Mg, Al, Ni, Cu, Au)-oxide-silicon structures with Al₂O₃- and ZrO₂-based insulators. For Al₂O₃- and ZrO₂ layers grown on Si by atomic layer deposition the barrier height between the Si valence band and the oxide conduction band was found to be 3.25 and 3.1 eV, respectively. Thermal oxidation of the Si/oxide stacks results in a barrier height increase to ≈4 eV for both cases due to formation of a silicate interlayer. However, there is a significant sub-threshold electron emission both from silicon and metals, indicating a high density of states in the band gap of the insulators. These states largely determine the electron transport across metal oxides and may also account for a significant dipole component of the potential barrier at the metal/ZrO₂ and metal/Al₂O₃ interfaces.     

Luminescence of GeO2 glass, rutile-like and α-quartz-like crystals

The luminescence of GeO₂ rutile-like crystals was studied. Crystals were grown from a melt of germanium dioxide and sodium bicarbonate mixture. Luminescence of the crystal was compared with that of sodium germanate glasses produced in reduced and oxidized conditions. A luminescence band at 2.3 eV was observed under N₂ laser (337 nm). At higher excitation photon energies and X-ray excitation an additional band at 3 eV appears in luminescence. The band at 2.3 eV possesses intra-center decay time constant about 100 μs at 290 K and about 200 μs at low temperature. Analogous luminescence was obtained in reduced sodium germanate glasses. No luminescence was observed in oxidized glasses under nitrogen laser, therefore the luminescence of rutile-like crystal and reduced sodium germanate glass was ascribed to oxygen-deficient luminescence center modified by sodium. The band at 2.3 eV could be ascribed to triplet-singlet transition of this center, whereas the band at 3 eV, possessing decay about 0.2 μs, could be ascribed to singlet-singlet transitions. Both bands could be excited in recombination process with decay kinetics determined by traps, when excitation realized by ArF laser or ionizing irradiation with X-ray or electron beam. Another luminescence band at 3.9 eV in GeO₂ rutile-like crystal was obtained under ArF laser in the range 100-15 K. Damaging e-beam irradiation of GeO₂ crystal with α-quartz structure induces similar luminescence band.     

Influence of Y2O3 on structural and optical properties of SiO2-BaO-ZnO-xB2O3-(10−x) Y2O3 glasses and glass ceramics

SiO₂-BaO-ZnO-xB₂O₃-(10−x) Y₂O₃, (0 ≤ x ≤ 10) glasses are synthesized. The effect of Y₂O₃ on the structural and optical properties of glasses has been investigated using different characterization techniques. The results are discussed in light of non-bridging oxygens (NBO), optical basicity and heat-treatment of glasses. The band gap has been calculated for as cast and heat-treated glasses. The band gap energy is found to decrease with the increasing content of Y₂O₃ in the glasses and heat-treatment. The presence of the crystalline phase in the glass matrix showed remarkable effect on band gap which decreases to semiconducting range.     

Optical properties and structure of thin films from the system GeSe2-Sb2Se3-AgI

Chalcohalide glasses from the GeSe₂-Sb₂Se₃-AgI system were synthesized by taking preliminary prepared GeSe₂, Sb₂Se₃ and AgI in their molecular percentages and melting them in an evacuated quartz ampoule. Thin films from the above system were deposited using vacuum thermal evaporation at different conditions on optical glass substrates BK-7. Using X-ray microanalysis it was found that the film composition differs in a certain degree from the bulk composition. Optical transmission and reflection measurements were carried out in the spectral range 400-2500 nm. The optical constants of films thicker than 400 nm (refractive index, n, and absorption coefficient, k) and the film thickness (d) were calculated using a method developed by Konstantinov. The values of n change from 2.38 for thin GeSe₂ films up to 3.48 for thin Sb₂Se₃ films while the optical band gap decreased from 1.92 eV to 1.29 eV, respectively. After exposure to light the photo-induced changes in the optical parameters were negligible for GeSe₂ and Sb₂Se₃ films and increase for some of the ternary samples. Using IR spectroscopy some conclusions about changes in the film structure were drawn.     

Remark on the optical gap in ZnO-Bi2O3-TeO2 glasses

Four ZnO-Bi₂O₃-TeO₂ glasses were prepared from high purity (4N5) oxides. From measurements of the optical transmission on very thin bulk samples the optical gap was determined at around 3.55 eV for the glasses studied. The temperature dependence of the optical gap was also determined from the room temperature close up to 500 K. Preliminary Raman scattering measurements indicate that with a decrease in TeO₂ content, TeO₄ trigonal bipyramid transformation proceeds into TeO₃ trigonal pyramids.     

Crystal growth of boron monophosphide using a B2H6-PH3-H2 system

Boron monosphide (BP) with (100) orientation can be epitaxially grown on Si substrates with (100) orientation by thermal decomposition of B₂H₆ and PH₃ in hydrogen. In a horizontal CVD system, the growth rate was studied as a function of gas phase composition and temperature. The growth rate is independent of the PH₃ partial pressure in the region where the PH₃ is in excess. For low values of the B₂H₆ partial pressure the growth rate is proportional to the B₂H₆ partial pressure (a linear region) with an activation energy of 1.8 eV, and for high values of the B₂H₆ partial pressure the growth rate becomes constant (a saturation region) with an acivation energy of 3.0 eV. A simple adsorption-reaction model can be proposed to explain the experimental growth kinetics. The conductivity of the as-grown layer is determined by the PH₃ partial pressure. n-type BP can be obtained for high values of the PH₃ partial pressure and p-type BP for low values. Si doping during the growth and phosphorus anti-site donors are two possibilities to explain the results.     

Synthesis and characterization of ilmenite NiTiO3 and CoTiO3 prepared by a modified Pechini method

Powders of ilmenite structure NiTiO₃ and CoTiO₃ were prepared by a simple method based on the modified Pechini process. The raw compounds and citric acid (CA) were mixed in ethanol (EA) with the molar ratio Ni(Co)/Ti/CA/EA = 1/1/1/7.5. The DTA curve shows exothermic peaks only around 300-350 °C and 600 °C, which correspond to the decomposition of the organic compound and direct crystallization of the ilmenite phase. X-ray diffraction patterns indicated that the ilmenite phase was successfully synthesized as the Ni(Co)-Ti precursor calcined above 600-900 °C for 3 h, and the activation energies of NiTiO₃ and CoTiO₃ were calculated to be about 8.84 and 13.23 kJ/mol. TEM bright field images showed that the grain sizes of powders of NiTiO₃ and CoTiO₃ at 600-900 °C were estimated to be about 10-250 and 20-200 nm depending on the nature of the aggregate. The samples of NiTiO₃ calcined at 600-800 °C have the larger specific surface area of 31.51, 18.78, and 6.01 m²/g, respectively. The UV-Vis diffuse reflectance spectra show the optical band gaps of NiTiO₃ and CoTiO₃ as 3.02 and 2.43 eV.     

A study of nonlinear optical properties in Bi2O3-WO3-TeO2 glasses

A series of bismuth tungsten tellurite glasses were prepared and their densities, linear refractive indices and transmission spectra were measured. The optical bandgaps E_opt and Urbach energies E_e of glasses were obtained from ultraviolet absorption edges. Both the optical gap (E_opt) and the band tail (E_e) are behaving oppositely. As the value of E_opt decreases with increasing WO₃ content, the degree of disorder increases which causes more defects or localized states resulting in deep localized in the bandgap with the tailing increased. Z-scan technique was carried out to investigate the third-order nonlinear optical properties of Bi₂O₃-WO₃-TeO₂ glasses. The third-order optical nonlinearity increases with decreasing the optical bandgap E_opt, since a increase of WO₃ content can provide the non-bridging oxygen ion content.     

Semiconducting TiO2SiO2 glasses (II): Optical properties

The refractive index, optical absorption coefficient α and the thermomodulated absorption dα/dT have been measured on 70% TiO₂?30% SiO₂ glasses with up to 8% Ti³⁺. The direct absorption data show intense ligand field absorption at photon energies hν = 1.9 and 3.0 eV, arising from Ti³⁺ in a distorted octahedral environment. In the bandgap region at 3.5 eV α obey αhν ～ (hν ? E_g)²; it is qualitatively different from the bandgap absorption in crystalline TiO₂. The da/dT spectra show peaks in the bandgap region and at 1.1 eV in the near IR. This last peak is attributed to absorption by small polarons, and its line shape is compared with theoretical predictions.     

AC conductivity of (As2Te3)95Ge5

The elctrical conductivity of amorphous chalcogenide (As₂Te₃)₉₅Ge₅ is investigated at variable frequency, from 1 kHz up to 35 GHz, and a variable temperature, from 77 to 300 K. The low-temperature conductivity is constant with temperature at a fixed frequency. At a fixed temperature, it obeys a ω^0.8 law only at low frequencies. The results are analysed with respect to the polaron problem, but also with a simple model of several dilute localized levels having a wide energy distribution in the forbidden band.     

Preparation of Sb2S3 nanomaterials with different morphologies via a refluxing approach

Single-crystalline antimony trisulfide (Sb₂S₃) nanomaterials with flower-like and rod-like morphologies were successfully synthesized under refluxing conditions by the reaction of antimony trichloride (SbCl₃) and thiourea with PEG400 and OP-10 as the surfactants. X-ray diffraction (XRD) indicates that the obtained sample is orthorhombic-phase Sb₂S₃ with calculated lattice parameters a=1.124 nm, b=1.134 nm and c=0.382 nm. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) images show that the flower-like Sb₂S₃ is 9–10 μm in size, which is composed of thin leaves with thickness of 0.05–0.2 μm, width of 0.8–2.2 μm and length of 2.5–3 μm, and the rod-like Sb₂S₃ is 45–360 nm in diameter and 0.7–4 μm in length, respectively. UV–Vis analysis indicates that the band gap of Sb₂S₃ nanorods is 1.52 eV, suitable for photovoltaic conversion. A possible mechanism of formation was proposed. The effects of reaction time and surfactants on the growth of nanomaterials with different morphologies were also investigated.     

Bond character and properties of the mixed alkali system Na2OK2OAl2O3SiO2

The mixed alkali glass system Na₂OK₂OAl₂O₃SiO₂ was investigated. Density, transformation temperature, refractive index, and chemical durability were studied. Optical absorption and ESR spectra of the CuO-doped glasses were determined.Calculations of the polarizability of O^2?, bonding parameters of the Cu²⁺ complex, and the packing density are presented. It was found that for the mixed alkali glasses, the oxygen- alkali bond has a more ionic character than expected from additivity. This fact enables the non-linear changes of the refractive index, of the shift of the Cu²⁺ absorption band, and of the covalency to be interpreted as the Na mole fraction is varied. It is also possible to explain qualitatively the density, T_g and chemical durability non-linear variations with change of the Na content by the ionicity deviations of the bond character and the postulated pairs of Na⁺ and K⁺ ions in the mixed alkali glasses.     

Optical constants of semiconducting amorphous TiS2

Absorption edge, index of refraction and reflectivity were measured on a-TIS₂, which is liquid at room temperature. Optical constants ?₁ and ?₁ in the 0.05–5 eV region were derived using the Kramers-Kronig analysis.     

Synthesis and crystal structure of oxonitrate complexes Cs[VO2(NO3)2], Cs[MoO2(NO3)3], and MoO2(NO3)2

Cs[VO₂(NO₃)₂] (I), MoO₂(NO₃)₂ (II), and Cs[MoO₂(NO₃)₃] (III) complexes have been obtained by crystallization from nitric solutions and studied by single-crystal X-ray diffraction. Complexes I and II contain infinite zigzag chains of similar compositions, [VO₂(NO₃)₂]⁻ and [MoO₂(NO₃)₂], in which V and Mo atoms form, respectively, trigonal- and pentagonal-bipyramidal polyhedra. Each of these polyhedrons also contains one terminal and two bridge O atoms and two terminal NO₃ groups which are monodentate and bidentate in complexes I and II, respectively. Complex III has an island structure and consists of Cs⁺ cations and [MoO₂(NO₃)₃]⁻ anions, in which the Mo atom is surrounded by one bidentate NO₃ group and two monodentate NO₃ groups and two terminal O atoms in the cis-positions; oxygen atoms form a polyhedron in the form of distorted octahedron. According to the ab initio calculation of isolated MoO₂(NO₃)₂ molecules in the gas phase and solution, the coordination environment of the Mo atom, similarly to the Cr(VI) atom in CrO₂(NO₃)₂, is formed by two bidentate nitrate groups and two terminal O atoms (polyhedron- twisted trigonal prism).     

The structure and optical properties of GeO2-GeS2 glasses

Oxy-chalcogenide glasses with compositions of xGeO₂-(100 − x)GeS₂, where 0 ? x ? 100 mol%, have been prepared and studied in terms of their structures and optical properties. X-ray fluorescence spectroscopy shows that Ge:S ratio can deviate from GeS₂ by ∼10 at.%, depending critically upon the preparation conditions. Raman scattering spectroscopy suggests that stoichiometric GeO₂-GeS₂ glasses have a heterogeneous structure in the scale of 1-100 nm. The optical gaps are nearly constant at 3.0-3.5 eV for glasses with 0 ? x ? 80 mol% and abruptly increase to ∼6 eV in GeO₂. This dependence suggests that the optical gap is governed by GeS₂ clusters, which are isolated and/or percolated. Composition-deviated glasses appear as orange and brown, and these glasses seem to have more inhomogeneous structures.     

Hydride-assisted growth of GaN nanowires on Au/Si(0 0 1) via the reaction of Ga with NH3 and H2

High quality, straight GaN nanowires (NWs) with diameters of 50 nm and lengths up to 3 μm have been grown on Si(0 0 1) using Au as a catalyst and the direct reaction of Ga with NH₃ and N₂:H₂ at 900 °C. These exhibited intense, near band edge photoluminescence at 3.42 eV in comparison to GaN NWs with non-uniform diameters obtained under a flow of Ar:NH₃, which showed much weaker band edge emission due to strong non-radiative recombination. A significantly higher yield of β-Ga₂O₃ NWs with diameters of ≤50 nm and lengths up to 10 μm were obtained, however, via the reaction of Ga with residual O₂ under a flow of Ar alone. The growth of GaN NWs depends critically on the temperature, pressure and flows in decreasing order of importance but also the availability of reactive species of Ga and N. A growth mechanism is proposed whereby H₂ dissociates on the Au nanoparticles and reacts with Ga giving Ga_xH_y thereby promoting one-dimensional (1D) growth via its reaction with dissociated NH₃ near or at the top of the GaN NWs while suppressing at the same time the formation of an underlying amorphous layer. The higher yield and longer β-Ga₂O₃ NWs grow by the vapor liquid solid mechanism that occurs much more efficiently than nitridation.     

Quenched glasses in the systems of Li2O with Al2O3, Ga2O3 and Bi2O3

By rapid quenching in a twin roller apparatus, glass was found to occur widely in the systems of Li₂O with Al₂O₃, Ga₂O₃, Bi₂O₃ and in mixed systems. Examination of the resulting flakes by X-ray powder diffraction, differential thermal analysis, and capacitance data revealed the occurrence of glass, glass transitions, crystallization exotherms and the nature of some of the crystallization paths.The log ionic conductivity of the glasses was found to follow a linear relationship with the Li concentration. Evidence was observed for three new metastable crystalline phases, one in the Li₂OAl₂O₃ system and two in the Li₂OBi₂O₃ system. The latter system also showed evidence for the occurrence of two glasses at almost all compositions.     

A novel route of synthesis of WS2 thin film and its characterization

WS₂ thin films have been deposited by chemical deposition technique using citric acid as a complexing agent at 343 K. X-ray pattern shows that crystalline nature with hexagonal- and orthorhombic-mixed phase. The films show that good optical properties high absorption and band gap value was found to be 1.31 eV. The specific conductivity of the film was found to be in order of 10⁻³ (Ω cm)⁻¹.     

Bulk and impurity infrared absorption in 0.5 As2Se30.5 GeSe2 glass

A study of infrared absorption in the 250–4000 cm^?1 region has been carried out for 0.5 As₂Se₃0.5 GeSe₂ glasses quantitatively doped with oxide impurity. The frequencies of the intrinsic 2- and 3-phonon absorption bands at 490 and 690 cm^?1 correspond well to those predicted from combinations of the high frequency bands in the first order IR and Raman spectra of As₂Se₃ and GeSe₂ glasses.Glasses doped with As₂O₃ exhibit the same oxide impurity absorptionbands as those doped with GeO₂. Unlike As₂Se₃ glass, at impurity concentrations up to 1000 ppm As₂O₃, 0.5 As₂Se₃0.5 GeSe₂ glass exhibits only one major oxide impurity species, characterized by absorption bands at 780 and 1260 cm^?1 and due to oxygen bonded to network Ge. The observation of a much weaker network AsO vibration band at 670 cm^?1 confirms that oxygen bonds preferentially to Ge in this glass. The same minor oxide species appears to determine excess IR absorption at the CO₂ laser wavelength of 10.6 μm in both As₂Se₃ and 0.5 As₂Se₃ 0.5 GeSe₂ glasses. The frequencies and intensities of absorption bands due to hydrogen impurities are also quite comparable for these two materials.