Electrical conductivity and photoconductivity of As2S3PbS glasses

Measurements of dc electrical conductivity and photoconductivity of various glassy compositions (x = 0.1?0.625) in (As₂S₃)_1?x(PbS)_x have been made. Experimental results of the temperature dependence of dc conductivity from room temperature to 200°C (which includes the glass transition temperature) are reported. All the compositions exhibit intrinsic conduction in the measured temperature range. Thermal activation energy, glass transition temperature and σ₀ for the compositions studied, were determined from the experimental data. The low value of $\text{σ}{}_0\text{(10?10}{}^{\mathrm{?2}}\text{Ω}{}^{\mathrm{?1}}\text{cm}{}^{\mathrm{?1}}$) in these semiconducting glasses is attributed to the greater participation of localized states in the conduction process.In the measurements of photoconductivity, the variation of photocurrent with temperature, photon energy, light intensity and electric field is observed. The recombination model has been involved to explain the results of photoconductivity. Both electrical and photoconductivity data support the presence of higher density of localized states in the x = 0.1 composition than in others.     

Silver sulfide based glasses (I). Glass forming regions,structure and ionic conduction of glasses in GeS2Ag2S and GeS2Ag2SAgI systems

Ag₂S forms with GeS₂ stable glasses over a wide range of compositions (0–55% Ag₂S mol%). In the same system, more complex glasses obtained by dissolving silver iodide have been synthesized with up to 50 mol% AgI.Raman spectra are presented and a vibrational assignment in terms of bridging and non-bridging sulfur has been made. The electrical conductivity of these glasses has been measured over a temperature range (?50°C? + 50°C) and for various compositions by the complex impedance diagram method. At 25°C, the conductivity reached a maximum value of 6 × 10^?3 Ω^?1 cm^?1. Whatever the glass used, the same limit value of conductivity $\text{(σ ? 10 su?2 Ω}{}^{\mathrm{?1}}\text{cm}{}^{\mathrm{?1}}$) and activation energy ($\text{E}{}_{\mathrm{\sigma }}\text{? 0.25}\text{eV}$) are obtained for the highest content of silver iodide. A conduction mechanism is proposed.     

Prediction of glass-forming ability for metallic systems

The relative glass-forming ability (GFA) of metallic alloys is considered in terms of a parameter $\text{ΔT}{}^1\text{= (T}{}_{\mathrm{<mtext>liq</mtext>}}{}^{\mathrm{<mtext>mix</mtext>}}\text{? T}{}_{\mathrm{<mtext>liq</mtext>}}\text{)/T}{}_{\mathrm{<mtext>liq</mtext>}}{}^{\mathrm{mix}}$, which represents the departure of the alloy liquids temperature, T_liq, from that of the simple rule of mixtures liquids temperature, T_liq^mix. For values of $\text{ΔT}{}^1\text{> 0.20}$ a metallic system is likely to form a glass by melt-quenching in useful thicknesses (i.e. > 20 μm) at a cooling rate of 10⁵?10⁷ K s^?1. Hence, a rapid assessment of the GFA of novel compositions may in general be obtained simply from a knowledge of the melting points of the pure components and the liquidust emperatures of the alloys.     

Effects of pressure on the electrical conductivity of chalcogenide glasses

The effects of hydrostatic pressure (to ～2.4 GPa) on the electrical conductivity of AsTe, AsTeI and AsTeGe bulk semiconducting glasses have been determined. The electrical conductivity σ increases nearly exponentially with increasing pressure P. The Δ 1n σ/ΔP values are dependent upon composition and pressure, and vary from about 2 to 6 GPa^?1. This is a narrow range of values considering that the initial conductivies vary over five orders of magnitude for the compositions studied. Many of the glasses exhibited time-dependent conductivity changes both at high pressure and after cycling to high pressure. At high pressure the conductivity drifted to higher values over a period of several hours, initially following a logarithmic time dependence. Generally, the drifts were observed for P ? 0.8 GPa and for $\text{σ ? 10}{}^{\mathrm{t-1}}\text{(Ω-}\text{m}\text{)}{}^{\mathrm{?1}}$. Following the high-pressure experiment, the conductivity (and also the density) of some glasses were above that for the as-prepared material. These same samples had a slightly different conductivity temperature dependence. The conductivity slowly relaxed (over many months) toward the original conductivity state, again initially following a logarithmic time dependence. Much of our data can be interpreted consistently if we assumed that the conductivity changes depend primarily on “expected” volume changes. The kinds of behavior reported here are similar to those observed for a wide variety of glass systems. Any models developed for describing electrical transport under pressure must account for time-dependent as well as pressure-dependent effects.     

Properties of heavily doped GDSi with low resistivity

Significant decrease in resistivity has been observed in glow-discharge-produced silicon (GDSi) containing 10¹⁹?10²¹ cm^?3 phosphorous atoms. At the highest doping level a resistivity of 0.01 ω cm at room temperature was obtained. The temperature dependence of the resistivity follows the form, $\text{? = ?}{}_0\text{exp}\text{(T}{}_0\text{/T)}{}^{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}$, over a temperature range from 80–400 K. Optical absorption, which increased with wavelength and was roughly proportional to the conductivity, was observed in the longer wavelength side of the intrinsic absorption edge and it was ascribed to mobile charge carriers. Hall effect measurements have shown that μ_H of phosphorus doped GDSi is about 1 cm² V^?1s^?1 and has a normal (negative) sign.     

Study of amorphous Ge–SiO2–P+Si tunnel junctions

A new method to determine ac conductivity of amorphous Ge using Al-amorphous Ge–SiO₂–P⁺Si tunnel junctions is presented. Frequency dependence of ac conductivity is found to satisfy the power law in the frequency range between 1 and 50 kHz and the density of localized states at the Fermi level is estimated to be ～ 1.7 × 10²⁰ cm^?3 eV^?1 which decreases to ～ 4.5 × 10¹⁹ cm^?3 eV^?1 after annealing at 175°C.Temperature dependence of tunneling conductance of Al-amorphous Ge–SiO₂–P⁺Si junctions is appreciable only near zero bias. Zero bias conductance of the junctions obeys the $\text{T}{}^{\mathrm{<mtext>?</mtext><mtext>1</mtext><mtext>4</mtext>}}$ law of Mott; the density of localized states obtained from the $\text{T}{}^{\mathrm{<mtext>?</mtext><mtext>1</mtext><mtext>4</mtext>}}$ law is one order of magnitude smaller than that obtained by ac conductivity measurements, being insensitive to annealing. This behavior of the tunnel junctions differes in many respects from those of Al–Al₂O₃-amorphous Ge tunnel juntions.     

The effects of oxygen,hydrogen and fluorine on the conductivity of high purity evaporated amorphous silicon films

Electron bombardment evaporation was used to deposit amorphous silicon (α-Si) films in an evaporator with a base pressure of 2 × 10^?10 Torr. Rutherford backscattering analysis was used to establish the conditions necessary for deposition of pure films.The DC conductivity was measured as a function of temperature (? 150°C to + 140°C). Pure films, which were deposited between room temperature and 400°C, were found to have a room temperature conductivity (σ_RT) in the region of 10^?3μ^?1cm^?1 and a log $\text{σα}\text{T}{}^{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}$ dependence. The value of σ_RT could be reduced by annealing reaching a minimum of 2 × 10^?7μ^?1 cm^?1 for an anneal temperature (T_A) of 520°C, but activated conduction was not observed.The implantation of hydrogen or fluorine (or contamination with oxygen) had the effect of reducing σ_RT, with a minimum value of less than 10^?8μ^?1cm^?1 (T_A = 400°C) for fluorine implantation to a dose of ≈ 10¹⁶ cm² (≈ 0.4 at% concentration). These films had high temperature (50°C) activation energies typical of activated conduction in extended states on the edge of the mobility gap. Implantation of fluorine to a dose of 1.5 × 10¹⁷ resulted in a rise of σ_RT (T_A = 400°C) to nearly 10⁴μ^?1 cm^?1 and log $\text{σα}\text{T}{}^{\mathrm{<mtext>?1</mtext><mtext>4</mtext>}}$ behaviour.X-ray analysis revealed that some crystallization occurred in films annealed at 600°C. This is correlated with a rise in σ_RT of the pure films and the disappearance of the effects of the introduced impurities.     

Temperature dependence of hopping transport in polymeric semiconductors

We report the results of measurement and analysis of the electrical conductivity of two synthetic highly purified copolymers of the polyacene quinone radical (PAQR) type. The dc conductivity was examined as a function of temperature and pressure. The conductivity-pressure relation is observed to go as log σ versus $\text{P}{}^{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}$. The conductivities under moderate pressure (400–5000 atm) show linear relationships on log σ versus $\text{T}{}^{\mathrm{<mtext>?</mtext><mtext>1</mtext><mtext>4</mtext>}}$ plots in the temperature range 70 K < T < 300 K. The possible interpretations as variable range hopping or as nearest neighbour hopping with distributions of activation energies are discussed.     

Electrical and optical properties of amorphous boron and amorphous concept for ß-rhombohedral boron

Measurements of the conductivity (σ), thermoelectric power (S) and thermal conductivity (κ) of amorphous boron are made over wide temperature ranges (T = 77–850 K for σ, T = 300–850 K for S and T = 80–1100 K for κ). The room temperature spectral dependencies of the reflection (R) and absorption (α) coefficients are determined for the wavelength intervals 2–25 μm and 1.3–25 μm respectively. The I–V characteristics are also studied and shown to be consistent with the Poole-Frenkel law.The value obtained for the thermal energy gap of amorphous boron (1.3 eV) is slightly smaller than that of crystal ß-rhombohedral boron (1.4 eV). The temperature dependence of the electrical conductivity can be satisfactorily described by the Mott law $\text{ln}\text{σ ≈ ?(T}{}_0\text{/T)}{}^{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}$, where $\text{T}{}_0\text{? 10}{}^8\text{K}$. This gives an estimate, N ≈ 10¹⁸ cm^?3, for the concentration of trapping levels responsible for the hopping conduction. The value $\text{?}{}_0\text{? 9}$ is found from the spectral dependence of R while α has Urbach-like character $\text{? α ≈}\text{exp}\text{(}\text{h}\text{?}\text{ω/Δ)}$, where $\text{Δ ? 0.19}\text{eV}$.A comparison is made between amorphous boron and crystalline ß-rhombohedral boron. Because of the very complex crystal structure and the large dimensions of the unit cell of ß-boron, some of its physical properties could be qualitatively described on the basis of the so-called ‘amorphous concept’.     

Electrical,structural and optical properties of amorphous carbon

The planar and transverse electrical resistivity of amorphous carbon (a-C) films getter-sputtered at low temperature (77–95 K) is well-fitted by the expression $\text{? = ?}{}_0\text{exp}\text{(T}{}_0\text{/T)}{}^{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}$ The exponent T₀ being approximately the same in both cases (≈ 7 × 10⁷ K) suggests that the amorphous films are isotropic. Films thinner than 600 Å display a two-dimensional hopping conductivity from which one deduces a density of states N(E_F) at the Fermi level of 10¹⁸ eV^?1 cm^?3 and a radius of the localized wave functions (a) of 12 Å. Tunneling experiments and optical absorption measurements are consistent with a pseudogap of approximately 0.8 eV. Electron diffraction experiments indicate that a-C films consist of a mixture of diamond and graphite bonds; this fact taken in the light of the other experiments would suggest that the graphite bonds act as the localized conduction states.     

Electrical properties of glassy AsxGe10Te90−x alloys

This paper analyses the electrical properties of glassy alloys of As_xGe₁₀Te_90?x, while reporting the conductivity and dielectric constant of As₅Ge₁₀Te₈₅ and As₁₅Ge₁₀Te₇₅ compositions in the temperature range 77–383 K and the frequency range from dc to 5 MHz. The dc conductivity has been shown to be of the form

The ratio σ₀₁/σ₀₂ is of the order of 10⁶. ΔE₁, the higher temperature activation energy, is dependent on the composition, while ΔE₂, the lower temperature activation energy, is less dependent on the composition. The dielectric constant has been found to be independent of temperature and frequency up to about 253 K. However, at higher temperatures, it becomes activated and proportional to log ω.Some common features of As_xGe₁₀Te_90?x are a kink in dc conductivity, a ω^0.8 relationship for ac conductivity, no evidence of variable-range hopping at low temperatures, field-dependent conductivity and memory switching. The data can be interpreted in terms of the dangling-bond theory of Mott and his collaborators. A high density of states of the order of 10²⁰eV^?1 cm^?3 near the Fermi level may be expected.     

Threefold bonding of tellurium in liquid semiconductor alloys

Bond orbital considerations show that a third covalent band in tellurium is unstable unless the concentration of threefold bonded (3F) tellurium atoms is smaller than the concentration of dangling bonds. At low hole concentrations, the formation of 3F atoms is inhibited further because of non-linear screening of their positive charge, which results in a large electrostatic energy. Consequently 3F bonding becomes important only in liquids whose electrical conductivity is higher than an estimated value $\text{≈1500 Ω}{}^{\mathrm{?1}}\text{cm}{}^{\mathrm{?1}}$.     

Frequency dependence of conduction and polarization in conductive polymers

We report the results of the measurement and analysis of the complex conductivities of two high polymers over the frequency range 10²–10⁶ Hz, and temperature range 70–300 K. Giant polarization of the nomadic type is observed, with dielectric constants ranging from about 50 to 6000 in these aromatic hydrocarbon polymers. The complex conductivities resemble power law behavior, σ_ac = Aω^s (with s in the range 0.7–1.0) in some temperature ranges, and deviates from this in others. The dc conductivity and the real part of the ac conductivity at various frequencies follow a $\text{T}{}^{\mathrm{<mtext>?</mtext><mtext>1</mtext><mtext>4</mtext>}}$ law. The dielectric constant varies as expected for nomadic polarization in long-chain molecules. An attempt is made to develop an understanding of the observed dependences of the complex conduction or polarization on temperature and frequency in terms of interchain and intrachain transport processes.     

Hydrogen permeation in the metallic glass Fe40Ni40P14B6

Hydrogen permeation from the gas phase through the metallic glass Fe₄₀Ni₄₀P₁₄B₆ (Metglas 2826) was measured with the electrochemical technique over 313 to 353K and 10⁵ to 10³ Pa. Specimen surfaces were coated with a thin layer of electrodeposited palladium to eleminate surface impedances to hydrogen entry and exit. Sievert's law behavior was observed over the temperature and pressure ranges studied. An excellent fit to the permeation transients as obtained from Fick's diffusion theory. Diffusivities derived from least squares fitting of permeation trasients were in good agreement with those obtained from time lag measurements. Within the concentration range studied, diffusivity was found to be independent of input hydrogen concentration. The expressions for the permeability coefficient, 2.24 × 10¹⁶ exp{[(48.99 ± 2.93) kJ/mol]/RT} atom H/ms $\text{Pa}{}^{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}$, the diffusivity 8.52 × 10^?7 exp{[(?47.07 ± 1.63) kJ/mol]/RT} m²/s, and the solubility, 2.62 × 10²²exp{[(?1.92 ± 4.56) kJ/mol]/RT} atom H/m³$\text{Pa}{}^{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}$, were determined.An annealing treatment at 573K for one hour decreases bot the permeability and diffusivity of hydrogen in the metallic glass.     

Effect of thermal history on conductivity and electrical relaxation in alkali silicate glasses

Electrical conductivity σ₀ and electric field relaxation measurements have been carried out as a function of thermal history for two alkali silicate glasses, Na₂O3SiO₂ and K₂O3SiO₂. Specimens of each glass with three different thermal histories, two of the anneal-and-quench type and one of the rate-cool type, were studied. The average structural or fictive temperature T_f of each of the specimens was characterized by measuring their indices of refraction. Effects of thermal history on σ₀ and its activation enthalpy $\text{H}{}_{\mathrm{\sigma }}{}^1$ were in accord with results of previous investigators. That is, for a given type of thermal history σ₀ was lower and $\text{H}{}_{\mathrm{\sigma }}{}^1$ higher the lower T_f. In addition it was found that for two specimens with the same T_f or index of refraction but different thermal histories the rate-cooled specimen exhibited a lower conductivity than the annealed-and-quenched specimen, in accord with the results of Ritland. The distribution of relaxation times τ_σ for decay of the electric field due to ionic migration was found to be due primarily to a distribution in the pre-exponential term ln $\text{τ}{}_{\mathrm{\sigma }}{}^1$ in the equation $\text{ln}\text{τ}{}_{\mathrm{\sigma }}\text{=}\text{ln}\text{τ}{}_{\mathrm{\sigma }}{}^1\text{+ H}{}^1\text{/RT}$; the distribution in $\text{H}{}^1$ was extremely narrow. Differences in thermal history caused small differences in the distribution of τ_σ, but no difference in the average activation enthalpy $\text{〈H}{}^1\text{〉}$ for τ_σ. From this result it appeared that the dependence of the conductivity activation enthalpy $\text{H}{}_{\mathrm{\sigma }}{}^1$ on thermal history was due to the effect of thermal history on the temperature dependence of the distribution in τ_σ.     

Nucleation kinetics of sodium disilicate

The kinetics of crystal nucleation in Na₂O · 2SiO₂ have been determined over the range of undercoolings between 173 and 373°C. The plot of log(I_v?) versus $\text{1}\text{ΔT}{}^2{}_{\mathrm{r}}\text{T}{}^3{}_{\mathrm{r}}$ is a straight line of negative slope over some 13 orders of magnitude in I_v. The slope of this relation indicates a nucleation barrier of about 45 kT at ΔT_r = 0.2, and the intercept at $\text{1}\text{ΔT}{}^2{}_{\mathrm{r}}\text{T}{}^3{}_{\mathrm{r}}\text{= 0}$ is 10²⁶ cm^-3 sec^-1. poise. The results are in good agreement with predictions of the theory of homogeneous nucleation, even in the pre-exponential factor.     

Small polaron conduction in V2O5P2O5 glasses

Dc conductivity measurements have been made between 90 and 520 K on three bulk samples of V₂O₅P₂O₅ glass. Heat treatment is found to result in a reduction of the activation energy at a given temperature and this is most noticeable at low temperatures. The behaviour at low temperatures can be described using Mott's variable range hopping arguments, and at high temperatures by non-adiabatic small polaron hopping between nearest neighbours. At intermediate temperatures a simple model is used in which excitations by optical and acoustic phonons are considered to make independent contributions to the jump frequency. Mott's theory is extended to the polaron case for $\text{T>}\text{1}\text{4}\text{?}$ and is shown to be in good agreement with results. Values for $\text{r}{}_{\mathrm{<mtext>p</mtext>}}\text{(～2.8}\text{A}\text{?}\text{)}$ the polaron radius and $\text{α(～3.5}\text{A}\text{?}{}^{\mathrm{?1}}\text{)}$ the electron decay constant are shown to be consistent with the model for small polarons. A method is suggested for obtaining α and N(E_F) from the ac conductivity and the slope of 1nσ versus $\text{1}\text{T}{}^{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}$ at low temperatures. Values of N(E) are obtained which correlate with those obtained by the previous analysis. This implies that the disorder energy separating adjacent sites Δ₀ is large (～0.4 eV) in these materials.     

Radiative and non-radiative transition probabilities and quantum yields for excited states of Er3+ in germanate and tellurite glasses

Absorption and fluorescence spectra of Er³⁺ in germanate and tellurite glasses were obtained. Spontaneous transition probabilities of the ${}^4\text{S}{}_{\mathrm{<mtext>3</mtext><mtext>2</mtext>}}$ and ${}^4\text{F}{}_{\mathrm{<mtext>9</mtext><mtext>2</mtext>}}$ to all terminal levels of Er³⁺ were calculated using the Judd-Ofelt theory and intensity parameters obtained from measured intergrated absorption coefficients. Quantum efficiencies of the ${}^4\text{S}{}_{\mathrm{<mtext>3</mtext><mtext>2</mtext>}}$ and ${}^4\text{F}{}_{\mathrm{<mtext>9</mtext><mtext>2</mtext>}}$ fluorescences were measured by the comparative method and by the use of measured decay times. Multiphonon relaxation rates for ${}^4\text{S}{}_{\mathrm{<mtext>3</mtext><mtext>2</mtext>}}\text{→}{}^4\text{F}{}_{\mathrm{<mtext>9</mtext><mtext>2</mtext>}}$ and ${}^4\text{F}{}_{\mathrm{<mtext>9</mtext><mtext>2</mtext>}}\text{→}{}^4\text{I}{}_{\mathrm{<mtext>9</mtext><mtext>2</mtext>}}$ were calculated using the experimental data. The average rate for ${}^4\text{S}{}_{\mathrm{<mtext>3</mtext><mtext>2</mtext>}}\text{→}{}^4\text{F}{}_{\mathrm{<mtext>9</mtext><mtext>2</mtext>}}$ in germanate is 1.16 × 10⁵ sec^?1 and in tellurite is 1.60 × 10⁴ sec^?1, and the rate for ${}^4\text{F}{}_{\mathrm{<mtext>9</mtext><mtext>2</mtext>}}\text{→}{}^4\text{I}{}_{\mathrm{<mtext>9</mtext><mtext>2</mtext>}}\text{is}\text{2.85 × 10}{}^5\text{sec}{}^{\mathrm{?1}}$ in germanate and 2.33 × 10⁵ sec^?1 in tellurite. The higher rates in germanate glasses are explained by the stronger interaction of the glass phonons with the electronic states of Er³⁺ in germanate than in tellurite glasses. This also explains the higher quantum yield of the visible fluorescence of Er³⁺ in tellurite glasses compared to other glasses.     

Alloying effect on the viscous flow in metallic glasses

The temperature dependence of viscosities near the glass transition is measured from the rates of thermal transformation for metallic glasses PtNiP, PdNiP, NiPBA1 and (Fe, Co)PBA1. Alloying among metallic elements which lowers the glass transition temperature T_g lowers the ideal glass transition temperature T₀, but raises the residual configurational entropy S_g and the activation energies for “diffusive” rearrangement, $\text{Δμ}{}^1$, of the alloying glasses, while compositional ordering associated with the addition of metalloids raises the T_g and T₀ and lowers the S_g and $\text{Δμ}{}^1$. Results are correlated to the atomic ordering and stability of the glasses. The extracted free volume and the critical diffusive volume are much smaller, by a factor of 4, for metallic glasses than for many other glasses.