Raman Scattering From TMTSF-Salts

Abstract

Experimental results for Raman scattering from TSeF, TMTSF-D12, (TMTSF)₂PF₆ and (TMTSF)₂AsF₆ excited with blue-green laser light at liquid nitrogen temperature are reported. A strong resonance effect for excitation of TMTSF with 4579 Å was observed and an assignment for the a_g modes was obtained by comparison with results from TTF. Methyl group modes were identified at 328 cm^?1, 472 cm^?1 and 916 cm^?1, respectively. Charging the TMTSF molecule resulted in a strong frequency shift of -122 cm^?1 and -76 cm^?1 for the a_gu₂ mode, respectively. A study of the temperature dependence of the scattering from molecular modes between 2 K and 300 K did not reveal any correlation with the phase transitions in the conducting compounds.     

High temperature ESR study of Fe(III) in various vitreous matrices

The Raman spectra of binary high-silica glasses have been studied. The main peaks at 808 cm^?1 and 710 cm^?1 in vitreous B₂O₃ and vitreous P₂O₅, respectively, are greatly reduced in binary high-silica glass, whereas a peak at 425 cm^?1 due to GeOGe vibration and a peak at 1320 cm^?1 due to P = O vibration remain strong, increasing in intensity with decreasing SiO₂ concentration. In the stimulated Raman spectra of a P₂O₅-SiO₂ glass fiber pumped by a mode-locked and Q-switched Nd:YAG laser at 1.064 μm, strong Stokes emissions due to the P = O vibration have been observed at 1.24 μm and 1.48 μm. In the spectra for a GeO₂-SiO₂ glass fiber, four narrow-width Stokes emissions due to the GeOGe vibration have been observed at 1.115, 1.172, 1.235 and 1.305 μm.     

Infrared spectra of amorphous thallium-selenium alloys

Amorphous thallium-selenium alloys (a-Tl_xSe_1?x) have been studied by Fourier transform infrared spectroscopy within the composition range 0 ? x ? 0.53. Differential scanning calorimetry measurements were used to check the selenium content and the homogeneity of the samples. For the stoichiometric composition a-TlSe there is strong evidence of short-range order similar to that found in the crystalline phase, c-TlSe. The spectra of both amorphous and crystalline TlSe display features associated with bond-bending and bond-stretching modes of distorted tetrahedra at ～97 cm^?1 and ～163 cm^?1, reflecting the similarity of tetrahedral coordination within the [(TlSe₂)^?1]n chains. At the Se-rich side with x ? 0.24, a superposition of typical infrared bands of a-TlSe and amorphous selenium (a-Se) is observed. The results are discussed in terms of a structural model for a-Tl_xSe_1?x.     

Electron Spin Resonance In CuCrS2 and CuCrSe2 Single Crystals

Abstract

Single crystal ESR spectra of CuCrS₂ and CuCrSe₂ have been measured at both X- and Q-band frequencies. Anisotropic signals from the localised Cr³⁺ d-electrons give zero-field splitting parameters of 0.29cm^?1 and 0.31cm^?1 for the sulphide and selenide respectively, suggesting a possible orbital interaction between the Cr and Cu ions. The dependence of the ESR parameters on temperature shows the effect of magnetic ordering.     

Anomalous physical properties and Raman spectra of glassy B2O3BaTiO3Na2O materials

Anomalous physical properties (refractive index and density) of B₂O₃BaTiO₃Na₂O ternay glasses are determined and discussed on the basis of the structure present in the glasses and evidenced by vibrational Raman spectroscopy.These glasses behave in a manner analogous to the alkali B₂O₃X₂O binary glasses for molar ratio R = basic oxide/B₂O₃ up to 0.3, with oxygen binding by means of bridging bonds while boron coordination changes from the trigonal to tetrahedral type. The phenomenon is indicated by a progressive weakening of the 806 cm^?1 peak (attributable to a breathing vibration of the boroxol unit) and by a concomitant strengthening of the ～775 cm^?1 peak (attributable to a vibrational mode of boroxol units, or derived units, containing at least one 4-coordinate boron atom). For higher R values the Raman spectra bring to light the progressive demolition of the structural units responsible for the 775 cm^?1 Raman peak, which gives rise (the transformation is complete for R ～ 1) to two new main structural units, orthoborate [BTi₄O₁₀]^?1 (peak at 845 cm^?1) and metaborate BO₂^? (peak at 715 cm^?1).     

Optical and electrical properties of chlorinated and hydrogenated amorphous silicon prepared by glow discharge

Chlorinated and hydrogenated amorphous silicon films were prepared by glow discharge of a SiCl₄/H₂ mixture. Infrared spectra of these films show that, in addition to the hydrogen induced bands, two new modes appear at 545 cm^?1 (SiCl stretching) and 500 cm^?1 (Si TO modes induced by chlorine). Observation of the 545 cm^?1 band proves that chlorine is able to act as a dangling bond terminator in an amorphous silicon matrix. A good agreement is found between the total amount of chlorine determined by electron microprobe analysis and the value estimated from the integrated strength of the SiCl stretching mode. The relatively high value of the optical band gap (1.80 eV) of our material containing only 5 at.% bonded hydrogen shows that chlorine plays a major role in the optical gap value. Electrical conductivity, photoconductivity and luminescence properties are qualitatively similar to that of a: SiH films.     

Intrinsic and impurity infrared absorption in As2Se3 glass

A quantitative study of infrared absorption in the 250–4000 cm^?1 region of As₂Se₃ glasses doped with small amounts of As₂O₃ or purified by various procedures has been carried out with particular attention to absorption in the wavelength regions of the CO₂ and CO lasers. The dependence of the relative intensities of the oxide impurity bands in the 650–1340 cm^?1 region on the total amount of As₂O₃ added to the glass indicates the existence of three distinct oxide-impurity species. A number of higher-frequency impurity bands which are due to the presence of hydrogen in the glass and whose intensities are highly dependent on the glass-melting conditions have been observed and classified. Intrinsic multiphonon absorption in the 400–1100 cm^?1 region has been interpreted in terms of combination and overtone bands of the two highest-frequency fundamental vibrational modes. Absorption coefficients of As₂Se₃ glass in the 920–1090 cm^?1 CO₂ laser region are limited by intrinsic multiphonon absorption to values of around 10^?2 cm^?1. The lowest absorption coefficients measured in the 1700–2000 cm^?1 CO laser region were around 2 × 10^?3 cm^?1 and may contain contributions from hydrogen-impurity bands.     

Triplet Excitions in Crystalline Trans-Stilbene I. Spectroscopy of the So → T1 Transition

Abstract

The first singlet → triplet absorption of trans-stilbene has been studied between 10 and 300 K. The triplet exciton energy (energy of the lowest 0–0 line) is 17380 cm^?1 at 10 K, and does not change significantly with temperature. Vibrational A_g modes of 206. 1250 and 1570 cm^?1 are active. The Franck-Condon factor of the origin region is small. The low temperature spectra of the 0–0 and 206 cm^?1 regions show a doublet structure with a splitting of 82 ± 1 cm^?1 which is attributed to the site splitting. Further structure shown by the lines is discussed. The lines are approximately lorentzian. From curve fitting, line-widths and exciton-phonon coupling constants, increasing linearly with T, are deduced. Exciton-phonon coupling appears to be different on the two sites. The product of absorption coefficient at 4880 Å, α, by the total triplettriplet interaction rate constant has been measured at 295 K: αγ=2.3 ± 0.3. 10^?15 cm² sec^?1, corresponding for γ_total to a value of a few 10^?12 cm³ sec^?1.     

Spectres de vibration du Cristal de Biphényle à Basse Température

Abstract

Low-temperature infrared and Raman spectra of Crystalline biphenyl have been investigated in the 3100–25 cm^?1 range, and those of biphenyl-D₁₀ between 200 and 25 cm^?1. The infrared dichroism of an Oriented crystal at 77°K has been measured in the 3100–400 cm^?1 region. The assignment for the internal modes V ₅(B_2u), v ₆ (B_2u), v ₁(B_1u), v ₁₀(B_1g), v ₂(B_2g) et v ₃ (B_3g) is given.

The band splitting is analized and hte components due ot the correlation effect in the fundamentals are separated from the components due to combinations. Isotopic shifts are used to assign the nine external vibrations as well as the torsional mode. The temperature effect on the frequencies occuring below 500 cm^?1 is discussed.     

Raman scattering in amorphous films of In1−xSex alloys

Raman scattering (RS) in amorphous films of In_1−xSe_x with 0.67±x?0.38 has been studied in backscattering geometry with the use of a microscope. Recorded RS spectra are revealing a mixed vibrational density-of-states and molecular character. The spectra spread from the Rayleigh line up to 200-250 cm⁻¹. The bands superimposed on the continua are related to zone center modes of the relevant crystal counterpart, Se-Se or In-In vibrations. The RS spectra suggest the structure of the In_1−xSe_x alloys to be the continuous random network built up of In centered tetrahedral clusters with In and Se atoms at the corners. The structure of the Se-rich alloys is similar to 4-2 networks with dominant InSe_4/2 clusters and two-fold coordination of Se bridging atoms. That of the In-rich alloys is expected to resemble 4-3 network with rather strong involvement of In atoms at corner of the In-centered tetrahedral clusters and Se atoms being linked to three In ones.     

Ab initio calculation of vibrational frequencies of GexSe1−x glass

We have used the density functional theory to make the models of Ge_xSe_1?x glass for which the energy is a minimum. The clusters, Ge₂Se₂, Ge₂Se₃, Ge₃Se, Ge₃Se₂, Ge₄Se, GeSe₃, GeSe₄, chain mode zig-zag Ge₄Se₃, corner sharing GeSe₄, and edge sharing Ge₂Se₆, have been made successfully and their vibrational spectra have been calculated from the first principles. We are able to optimize the bond distances as well as the bond angles. The calculated values of the frequencies of vibrations of the various clusters have been compared with those obtained from the experimental Raman spectra of actual glasses, Ge_xSe_1?x(0 < x < 0.3). The local concentration, x within 0.25 nm is nonuniform in the amorphous material. When the same cluster occurs in two stable configurations, low frequency vibrations of frequency, ν < 100 cm^?1, are found. The corner sharing GeSe₄ has low frequency modes at 54 cm^?1 and 93 cm^?1 whereas these modes disappear in the pyramidal configuration. The low frequency modes are therefore associated with the breaking of C₄ symmetry of the pyramidal configuration. The computed vibrational frequencies of clusters Ge₃, Ge₄Se₃, Ge₂Se₃, GeSe₃ and Ge₃Se₂ are actually present in the Raman spectra of the glass, Ge_xSe_1?x(0 < x < 0.3).     

Smooth titania nanotubes: Self-organization and stabilization of anatase phase

We present transmission electron microscopy and Raman scattering measurements showing that niobium inhibits the processes of nucleation and growth of anatase crystallites in the initial amorphous titania nanotubes and thus shifts the temperature of the complete amorphous-to-anatase phase transition to higher values up to 550 °C. Niobium dopants stabilize the anatase phase in titania nanotubes up to 650 °C. The size of anatase crystallites can reach 30–50 nm. Excess niobium atoms which are pulled off from the volume of anatase crystallite form polymeric or monomeric Ti–O–NbO groups at the interface area. Slight shift and broadening of E_g (144 cm^?1), A_1g (515 cm^?1) and E_g (630 cm^?1) modes in Raman spectra can be explained by niobium insertion into the anatase structure.     

Identification of the IR frequencies of the interstitial carbon atom in some M6C (M = Fe,Ru) carbonyl clusters by13 C-enrichment

¹³C-enriched carbido carbonyl clusters of the type [M₆C(CO) _n ] ^z? (M=Fe,n=16,z=2; M=Ru,n=16 ifz=2 andn=17 ifz=0) have been prepared and their IR spectra observed in the 900?600 cm^?1 region; the band shifts occurring upon¹³ C substitution enable the assignment to the stretching modes of the interstitial C atom. Band patterns reflect the symmetry of the M₆C core, but the frequencies seem dependent on other molecular features.     

Infrared spectra of glassy Se containing small amounts of S,Te, As,or Ge

The infrared transmission spectra of glassy Se containing 2.5 and 5.0 at % S, Te, As or Ge as well as pure Se were measured in the wavenumber region 400-60 cm^?1 at room temperature. Besides the absorption bands reported already for pure Se, well-defined bands were founds at 355 cm^?1 and 168 cm^?1 for the addition of S, and at 205 cm^?1 for Te. These new absorption bands attributed to Se₃S₅ and Se₅Te₃ mixed rings, respectively. For As, a strong absorption band appeared at 240 cm^?1. The band near 135 cm^?1 began to broaden and shift to lower frequency with As content. Two shoulder bands near 307 cm^?1 and 278 cm^?1 and a separated band at 195 cm^?1 were found for Ge. With increasing Ge concentration the band at 135 cm^?1 broadened and shifted to lower frequency. An interpretation for the new bands is presented on the basis of a molecular model.     

Infrared optical properties of (CuGe2P3)1−x(6 Ge)x solid solutions

Infrared reflectivity spectra of (CuGe₂P₃)_1−x(6 Ge)_x mixed crystals with compositions in the range x = 0.07–0.33 are measured at room temperature in the wavenumber range from 180 to 4000 cm⁻¹. An analysis of the spectra reveals six vibrational modes. The composition dependence of the mode frequencies and of the free carrier concentration and mobility is given and compared with infrared optical data for CuGe₂P₃.     

The validity of the double layer model on the amorphous semiconductor surface including the bulk localized state within the gap

Under the two assumptions that the origin of surface states may be different from that of bulk localized states within the gap and the density of surface states is sufficiently high, the validity of the double layer model on the amorphous semiconductor surface is investigated in comparison with the case of a crystal. It is suggested that the criteria concerning the double layer should be determined by the relative value of the surface states to that of bulk localized states. The existence of the double layer can be confirmed when the bulk localized state density n(E_f) is smaller than 10¹⁹ cm^?3 eV^?1. When n(E_f) is high at about 10²⁰ cm^?3 eV^?1, surface states cannot be distinguished from the localized states within the gap. This double layer model is strongly supported by the results of previous experiments by others who have measured the dependence of the Schottky barrier height on the work function of metal and the dependence of the surface potential on the preparation conditions of a-SiH.     

Vibrational Properties of LiGaO2 (I). Experimental Results

Infrared reflectivity spectra of LiGaO₂ are measured at room temperature in the wave-number range from 200 to 4000 cm¹ for the polarization directions E ∥ a and E ∥ c. The parameters of 10 B₁ modes and 4 A₁ modes are determined by a dispersion analysis of the spectra. The results obtained are compared with previous Raman scattering measurements.     

Some features of EPR and optical spectra of vanadium in aluminophosphate glasses

The EPR and optical spectra of vanadium in glasses of ternary Al₂O₃P₂O₅SiO₂ and Al₂O₃P₂O₅B₂O₃ systems have been measured. The results were compared with earlier data for vanadium in binary phosphate, aluminophosphate and silicaphosphate glasses and with results of de-Biasi for V⁴⁺ in crystalline powder α-crystobalite AlPO₄. The superpositions of two hyperfine spectra (ASB-I and ASB-II) were found for many glasses of ternary systems. Both spectra can be attributed to VO²⁺ ions. The intensity ratio of the ASB-II spectrum to ASB-I depends on glass composition but is great (> 7) for all the glasses. Only the ASB-II spectrum was observed in glasses with low concentration of Al₂O₃. The spectral parameters of ASB-II spectrum are g_| = 1.916–1.921; g_⊥ 1.980–1.988; A_| = (188?190) × 10^?4cm^?1 and A_⊥ = (74–77) × 10^?4cm^?1. Three intense bands at 370, 455 and 700 ans 720 nm observed in these glasses can be attributed to V³⁺ ions. The excellent agreement of the parameters of the EPR spectrum of V⁴⁺ ions in crystalline α-crystobalite AIPO₄ and ASB-II spectra in the glasses under study suggest the identical electron structure of the paramagnetic species. This species is believed to be characterized by optical bands at 680 and 790 nm which have been observed by de Biasi. The orbital mixing coefficients indicate strong tetragonal distortion of vanadyl complexes responsible for the ASB-II spectrum. It is assumed that VO²⁺ ions responsible for this spectrum act as modifiers fitting into the relatively small holes of the three-dimensional networks of phosphate glasses containing no cations of large radii. The microscopic basicity of oxygens in such holes must be about 0.48.     

The effects of oxygen,hydrogen and fluorine on the conductivity of high purity evaporated amorphous silicon films

Electron bombardment evaporation was used to deposit amorphous silicon (α-Si) films in an evaporator with a base pressure of 2 × 10^?10 Torr. Rutherford backscattering analysis was used to establish the conditions necessary for deposition of pure films.The DC conductivity was measured as a function of temperature (? 150°C to + 140°C). Pure films, which were deposited between room temperature and 400°C, were found to have a room temperature conductivity (σ_RT) in the region of 10^?3μ^?1cm^?1 and a log $\text{σα}\text{T}{}^{\mathrm{<mtext>1</mtext><mtext>4</mtext>}}$ dependence. The value of σ_RT could be reduced by annealing reaching a minimum of 2 × 10^?7μ^?1 cm^?1 for an anneal temperature (T_A) of 520°C, but activated conduction was not observed.The implantation of hydrogen or fluorine (or contamination with oxygen) had the effect of reducing σ_RT, with a minimum value of less than 10^?8μ^?1cm^?1 (T_A = 400°C) for fluorine implantation to a dose of ≈ 10¹⁶ cm² (≈ 0.4 at% concentration). These films had high temperature (50°C) activation energies typical of activated conduction in extended states on the edge of the mobility gap. Implantation of fluorine to a dose of 1.5 × 10¹⁷ resulted in a rise of σ_RT (T_A = 400°C) to nearly 10⁴μ^?1 cm^?1 and log $\text{σα}\text{T}{}^{\mathrm{<mtext>?1</mtext><mtext>4</mtext>}}$ behaviour.X-ray analysis revealed that some crystallization occurred in films annealed at 600°C. This is correlated with a rise in σ_RT of the pure films and the disappearance of the effects of the introduced impurities.     

Infrared lattice vibration study of CuIn5S8

Infrared reflectivity spectra of the spinel compound CuIn₅S₈ are measured at room temperature in the wavenumber range from 180 to 4000 cm⁻¹. It is found that the spectra are dominated by two strong modes with frequencies and oscillator strengths that are practically equal to those of the corresponding modes in the normal spinels of type A^IIIn₂S₄. A very weak additional mode at 357 cm⁻¹ is ascribed to a secondary tetragonal phase previously observed in as-grown CuIn₅S₈ single crystals.