On the use of a O2:SF6 plasma treatment on GaAs processed surfaces for molecular beam epitaxial regrowth

Preparation of processed GaAs surface cleaning in view of molecular beam epitaxy regrowth by means of a O₂SF₆ microwave plasma has been investigated. Photoemission, Auger electron spectroscopy, atomic force microscopy and secondary ion mass spectrometry have been used for characterization. The O₂SF₆ plasma treatment was found to be very efficient for decontaminating the GaAs surface and leads to the formation of an oxide layer that can be taken off by a thermal or low-temperature H-plasma-assisted deoxidation. The levels of oxygen and carbon contaminants at the regrowth interface were measured to be in the range of a standard homoepitaxial layer-epiready substrate interface. Fluorine was observed to be eliminated upon deoxidation while sulphur is present, particularly in the case of low temperature grown layers. This plasma treatment was found to be efficient for preparation of processed GaAs surfaces for molecular beam epitaxial regrowth.     

Investigation of interface characteristics of Al2O3/Si under various O2 plasma exposure times during the deposition of Al2O3 by PA-ALD

Plasma-assisted atomic layer deposition (PA-ALD) is more suitable than thermal atomic layer deposition (ALD) for mass production because of its faster growth rate. However, controlling surface damage caused by plasma during the PA-ALD process is a key issue. In this study, the passivation characteristics of Al₂O₃ layers deposited by PA-ALD were investigated with various O₂ plasma exposure times. The growth per cycle (GPC) during Al₂O₃ deposition was saturated at approximately 1.4?Å/cycle after an O₂ plasma exposure time of 1.5?s, and a refractive index of Al₂O₃ in the range of 1.65–1.67 was obtained. As the O₂ plasma exposure time increased in the Al₂O₃ deposition process, the passivation properties tended to deteriorate, and as the radio frequency (RF) power increased, the passivation uniformity and the thermal stability of the Al₂O₃ layer deteriorated. To study the Al₂O₃/Si interface characteristics, the capacitance-voltage (C-V) and the conductance-voltage (G-V) were measured using a mercury probe, and the fixed charge density (Q_f) and the interface trap density (D_it) were then extracted. The Q_f of the Al₂O₃ layer deposited on a Si wafer by PA-ALD was almost unaffected, but the D_it increased with O₂ plasma exposure time. In conclusion, as the O₂ plasma exposure time increased during Al₂O₃ layer deposition by PA-ALD, the Al₂O₃/Si interface characteristics deteriorated because of plasma surface damage.     

Enhancement of the hydrophobicity of silk fabrics by SF6 plasma

Hydrophobic properties are of interest in fabric and textile manufacture. We have used radio-frequency inductively coupled SF₆plasma to modify the surface of Thai silk fabrics for the enhancement of the hydrophobic property. The water contact angle of fabrics increased from 0°up to 145°after SF₆ plasma treatment. The measured water absorption time was found to depend upon the treatment time and RF power, for SF₆ pressures lower than 0.05 Torr. At higher SF₆ pressures, all samples achieved absorption times in excess of 200 min, regardless of the treatment time and RF power. The morphology changes of fabrics after plasma treatment were characterized by scanning electron microscopy and atomic force microscopy. After plasma treatment, the RMS surface roughness of the fibres increased from about 10 to 30 nm. From X-ray photoelectron microscopy analysis, we found that the hydrophobicity of the fabrics is the highest when the fluorine/carbon ratio at the surface increases. A small decrease of the oxygen/carbon ratio was also observed on the fabrics that showed the longest absorption times.     

Growth and decay of the Pd(1 1 1)-Pd5O4 surface oxide: Pressure-dependent kinetics and structural aspects

Growth and decomposition of the Pd₅O₄ surface oxide on Pd(1 1 1) were studied at sample temperatures between 573 and 683 K and O₂ gas pressures between 10⁻⁷ and 6 × 10⁻⁵ mbar, by means of an effusive O₂ beam from a capillary array doser, scanning tunnelling microscopy (STM) and thermal desorption spectrometry (TDS). Exposures beyond the p(2 × 2)O adlayer (saturation coverage 0.25) at 683 K (near thermodynamic equilibrium with respect to Pd₅O₄ surface oxide formation) lead to incorporation of additional oxygen into the surface. To initiate the incorporation, a critical pressure beyond the thermodynamic stability limit of the surface oxide is required. This thermodynamic stability limit is near 8.9 × 10⁻⁶ mbar at 683 K, in good agreement with calculations by density functional theory. A controlled kinetic study was feasible by generating nuclei by only a short O₂ pressure pulse and then following further growth kinetics in the lower (10⁻⁶ mbar) pressure range.Growth of the surface oxide layer at a lower temperature (573 K) studied by STM is characterized by a high degree of heterogeneity. Among various metastable local structures, a seam of disordered oxide formed at the step edges is a common structural feature characteristic of initial oxide growth. Further oxide nucleation appears to be favoured along the interface between the p(2 × 2)O structure and these disordered seams. Among the intermediate phases one specifically stable phase was detected both during growth and decomposition of the Pd₅O₄ layer. It is hexagonal with a distance of about 0.62 nm between the protrusions. Its well-ordered form is a superstructure.Isothermal decay of the Pd₅O₄ oxide layer at 693 K involves at first a rearrangement into the structure, indicating its high-temperature stability. This structure can break up into small clusters of uniform size and leaves a free metal surface area covered by a p(2 × 2)O adlayer. The rate of desorption increases autocatalytically with increasing phase boundary metal-oxide. We propose that at close-to-equilibrium conditions (693 K) surface oxide growth and decay occur via this intermediate structure.     

Effect of modification of S-terminated Ge(1 0 0) surface on ALD HfO2 gate stack

When S-termination on a Ge(1 0 0) surface was desorbed at an elevated temperature and an atomic layer deposition (ALD) HfO₂ film was deposited, interfacial thickness was less than 1 nm. As a result, the equivalent oxide thickness (EOT) of the stack on the initially S-terminated surface was thinner than that deposited on the O₃-oxidized surface, while HfO₂ film thickness was almost identical on both surfaces. Nevertheless, the HfO₂ stack on the initially S-terminated surface exhibited improved leakage current characteristics due to an increase in barrier height. Its thinner but robust interface will contribute to the scaling down of gate oxide integrity.     

Structure and electronic properties calculation of ultrathin α-Al2O3 films on (0 0 0 1) α-Cr2O3 templates

Ab initio total energy Hartree-Fock calculations of ultrathin films of α-Al₂O₃ on (0 0 0 1) α-Cr₂O₃ templates are presented. The surface relaxation, the in-plane reconstruction and the surface and strain energies of the slabs are studied as a function of alumina film thickness. The surface Al layer is found to relax inwards considerably, with the magnitude of the inwards relaxation depending on the thickness of the ultrathin alumina film in a non-linear manner. The calculations also reveal that ultrathin films of alumina lower the surface energy of (0 0 0 1) α-chromia substrates. This indicates that the (0 0 0 1) α-chromia surface provides favourable conditions for the templated growth of α-alumina. However, increasing the alumina film thickness is found to give rise to a significant increase in strain energy. Finally, the electronic properties at the surface of the (0 0 0 1) α-Al₂O₃/α-Cr₂O₃ slabs are investigated. Here it is found that the alumina coating gives rise to an increase in the covalency of the bonds at the surface of the slabs. In contrast, the influence of an alumina layer on the electrostatic potential at the surface of the chromia slab is relatively minor, which should also be beneficial for the templated growth of α-alumina on (0 0 0 1) α-chromia substrates.     

Ultra thin V2O3 films grown on oxidized Si(1 1 1)

The growth of V₂O₃(0 0 0 1) has been investigated by scanning tunnelling microscopy (STM) and X-ray photoelectron spectroscopy (XPS). Direct evaporation of vanadium onto the Si(1 1 1)-7 × 7 substrate gives rise to massive surface intermixing and consequent silicide formation. In order to obtain the vanadium oxide with good quality, the 7 × 7 surface was initially partially oxidized which leads to a smooth oxygen–silicon surface layer which in turn prevents a complete vanadium–silicon alloy formation. Finally a vanadium oxide film of V₂O₃ stoichiometry was created. The grown film exposes single crystalline areas of stepped surfaces which appear azimuthally randomly-oriented.     

Free radical reactions at the Ru(0 0 0 1) surface: Atomic oxygen and dissociated NH3

X-ray photoelectron spectroscopy was used to study the effect of atomic oxygen on Ru(0 0 0 1), and the effect of dissociated ammonia on RuO₂/Ru(0 0 0 1), in UHV conditions at ambient temperature. The Ru(0 0 0 1) surface was exposed, at ambient temperature, to a mixed flux of atomic and molecular oxygen generated by dissociation of O₂ in a thermal catalytic cracker, with 45% dissociation efficiency. The detailed study of the XPS spectra shows the formation of a disordered multilayer oxide (RuO₂). No formation of higher oxides of Ru was observed. The formation of RuO₂ proceeded without saturation for total oxygen exposures of up to 10⁵ Langmuir, at which point an average oxide thickness of 68 Å was observed. RuO₂ formed by the reaction with atomic oxygen was exposed to a flux of NH_x (x = 1, 2) + H generated by the cracker. The reduction of RuO₂ to Ru metal was observed by XPS. An exposure of 3.6 × 10² L of NH_x + H, resulted in the observation of adsorbed H₂O and OH, but no evidence of lattice oxide. The chemisorbed species were removed by additional NH_x + H exposure. No nitrogen adsorption was observed.     

Double-ceramic-layer thermal barrier coatings based on La2(Zr0.7Ce0.3)2O7/La2Ce2O7 deposited by electron beam-physical vapor deposition

Double-ceramic-layer (DCL) thermal barrier coatings (TBCs) of La₂(Zr_0.7Ce_0.3)₂O₇ (LZ7C3) and La₂Ce₂O₇ (LC) were deposited by electron beam-physical vapor deposition (EB-PVD). The composition, interdiffusion, surface and cross-sectional morphologies, cyclic oxidation behavior of DCL coating were studied. Energy dispersive spectroscopy and X-ray diffraction analyses indicate that both LZ7C3 and LC coatings are effectively fabricated by a single LZ7C3 ingot with properly controlling the deposition energy. The chemical compatibility of LC coating and thermally grown oxide (TGO) layer is unstable. LaAlO₃ is formed due to the chemical reaction between LC and Al₂O₃ which is the main composition of TGO layer. Additionally, the thermal cycling behavior of DCL coating is influenced by the interdiffusion of Zr and Ce between LZ7C3 and LC coatings. The failure of DCL coating is a result of the sintering of LZ7C3 coating surface, the chemical incompatibility of LC coating and TGO layer and the abnormal oxidation of bond coat. Since no single material that has been studied so far satisfies all the requirements for high temperature applications, DCL coating is an important development direction of TBCs.     

A KrF fast discharge laser in mixtures containing NF3, N2F4 or SF6

A fast discharge KrF laser system (λ = 248.5 nm) has been operated at 25 mJ/pulse, 3.0 MW peak power in high pressure He: Kr: fluoride mixtures containing low concentrations of both krypton and the fluorine donors N₂F₄, NF₃ and SF₆. Lasing action is reported for the first time in N₂F₄ and SF₆ with optimum energy output at 750 and 160 mJ/l respectively.     

The effect of fluorine-based plasma treatment on morphology and chemical surface composition of biocompatible silicone elastomer

X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM) have been used to investigate the effect of reactive ion etching (RIE) on poly(methylhydrogensiloxane-co-dimethylsiloxane) surface in fluorine-based plasmas. Polysiloxane layers supported on the standard silicon wafers were etched using SF₆ + O₂ or CF₄ + O₂ plasmas. SEM studies show that the polysiloxane morphology depends on plasma chemical composition strongly. Presence of a columnar layer likely covered with a fluorine rich compound was found on the elastomer surface after the CF₄ + O₂ plasma exposure. After the SF₆ + O₂ or CF₄ + O₂ plasma treatment the polysiloxane surface enriches with fluorine or with fluorine and aluminum, respectively. Different morphologies and surface chemical compositions of the silicone elastomer etched in both plasmas indicate different etching mechanisms.     

Methanol decomposition on the β-Ga2O3 (1 0 0) surface: A DFT approach

Density functional theory (DFT) cluster model calculations on methanol reactions on the β-Ga₂O₃ (1 0 0) surface have been realized. β-Ga₂O₃ structure has tetrahedral and octahedral ions and the results of gallia-methanol interaction are different depending on the local surface chemical composition. The surface without oxygen vacancies is very reactive and produces the methanol molecule decomposition. The unsaturated surface oxygen atoms strongly oxidize the methanol molecule. CO₂ and H₂O molecules are produced when methanol reacts with a free oxygen vacancy surface on octahedral gallium sites. On the other hand, H₂CO is found after the reaction of this molecule with a free O vacancy surface on tetrahedral gallium sites. A weak interaction between the remaining CO₂ molecule and the oxide surface was found, being this molecule easy to desorb. Otherwise, H₂CO has a stronger surface bond and it could suffer a later oxidation.     

Hydroxylation-induced modifications of the Al2O3/NiAl(0 0 1) surface at low water vapour pressure

STM, STS, LEED and XPS data for crystalline θ-Al₂O₃ and non-crystalline Al₂O₃ ultra-thin films grown on NiAl(0 0 1) at 1025 K and exposed to water vapour at low pressure (1 × 10⁻⁷-1 × 10⁻⁵ mbar) and room temperature are reported. Water dissociation is observed at low pressure. This reactivity is assigned to the presence of a high density of coordinatively unsaturated cationic sites at the surface of the oxide film. The hydroxyl/hydroxide groups cannot be directly identify by their XPS binding energy, which is interpreted as resulting from the high BE positions of the oxide anions (O_1s signal at 532.5-532.8 eV). However the XPS intensities give evidence of an uptake of oxygen accompanied by an increase of the surface coverage by Al³⁺ cations, and a decrease of the concentration in metallic Al at the alloy interface. A value of ∼2 for the oxygen to aluminium ions surface concentration ratio indicates the formation of an oxy-hydroxide (AlO_xOH_y with x + y ∼ 2) hydroxylation product. STM and LEED show the amorphisation and roughening of the oxide film. At P(H₂O) = 1 × 10⁻⁷ mbar, only the surface of the oxide film is modified, with formation of nodules of ∼2 nm lateral size covering homogeneously the surface. STS shows that essentially the valence band is modified with an increase of the density of states at the band edge. With increasing pressure, hydroxylation is amplified, leading to an increased coverage of the alloy by oxy-hydroxide products and to the formation of larger nodules (∼7 nm) of amorphous oxy-hydroxide. Roughening and loss of the nanostructure indicate a propagation of the reaction that modifies the bulk structure of the oxide film. Amorphisation can be reverted to crystallization by annealing under UHV at 1025 K when the surface of the oxide film has been modified, but not when the bulk structure has been modified.     

Reaction of O2 with the boron-terminated TaB2(0 0 0 1) surface

X-ray photoelectron spectroscopy has been used to study the clean TaB₂(0 0 0 1) surface and its reaction with O₂. In agreement with previous studies, XPS indicates that the clean surface is boron terminated. The topmost boron layer shows a chemically shifted B 1s peak at 187.1 eV compared to a B 1s peak at 188.6 eV for boron layers below the surface. The 187.1-188.6 eV peak intensity ratio and its variation with angle between the crystal normal and the detector is well described by a simple theoretical model based on an independently calculated electron inelastic mean free path of 15.7 Å for TaB₂. The dissociative sticking probability of O₂ on the boron-terminated TaB₂(0 0 0 1) surface is lower by a factor of 10⁴ than for the metal-terminated HfB₂(0 0 0 1) surface.     

Epitaxial MoOx nanostructures on TiO2(1 1 0) obtained using thermal decomposition of Mo(CO)6

Stoichiometric and highly-defective TiO₂(1 1 0) surfaces (called as yellow and blue, respectively) were exposed to Mo(CO)₆ vapours in UHV and in a reactive O₂ atmosphere. In the case of yellow-TiO₂, an O₂ reactive atmosphere was necessary to obtain the Mo(CO)₆ decomposition at 450 °C with deposition of MoO_x nanostructures where, according to core level photoemission data, the Mo⁺⁴ state is predominant. In the case of blue-TiO₂ it was possible to obtain Mo deposition both in UHV and in an O₂ atmosphere. A high dose of Mo(CO)₆ in UHV on blue-TiO₂ allowed the deposition of a thick metallic Mo layer. An air treatment of this sample at 580 °C led to the elimination of Mo as MoO₃ and to the formation of a transformed layer of stoichiometry of Ti_(1−x)Mo_xO₂ (where x is close to 0.1) which, according to photoelectron diffraction data, can be described as a substitutional near-surface alloy, where Mo⁺⁴ ions are embedded into the titania lattice. This embedding procedure results in a stabilization of the Mo⁺⁴ ions, which are capable to survive to air exposure for a rather long period of time. After exposure of the blue-TiO₂(1 1 0) substrate to Mo(CO)₆ vapours at 450 °C in an O₂ atmosphere it was possible to obtain a MoO₂ epitaxial ultrathin layer, whose photoelectron diffraction data demonstrate that is pseudomorphic to the substrate.     

Characterization and electrical properties of V2O5-CuO-P2O5 glasses

Characterization and electrical properties of vanadium-copper-phosphate glasses of compositions xV₂O₅-(40−x)CuO-60P₂O₅ have been reported. X-ray diffraction (XRD) confirms the amorphous nature of these glasses. It was observed that, the density (d) decreases gradually while the molar volume (V_m) increases with the increase of the vanadium oxide content in such glasses. This may be due to the effect of the polarizing power strength, PPS, which is a measure of ratio of the cation valance to its diameter. The dc conductivity increases while the activation energy decreases with the increase of the V₂O₅ content. The dc conductivity in the present glasses is electronic and depends strongly upon the average distance, R, between the vanadium ions. Analysis of the electrical properties has been made in the light of small polaron hopping model. The parameters obtained from the fits of the experimental data to this model are reasonable and consistent with glass composition. The conduction is attributed to non-adiabatic hopping of small polaron.     

Hydroxylated α-Al2O3 (0 0 0 1) surfaces and metal/α-Al2O3 (0 0 0 1) interfaces

X-ray photoelectron spectroscopy was applied to study the hydroxylation of α-Al₂O₃ (0 0 0 1) surfaces and the stability of surface OH groups. The evolution of interfacial chemistry of the α-Al₂O₃ (0 0 0 1) surfaces and metal/α-Al₂O₃ (0 0 0 1) interfaces are well illustrated via modifications of the surface O1s spectra. Clean hydroxylated surfaces are obtained through water- and oxygen plasma treatment at room temperature. The surface OH groups of the hydroxylated surface are very sensitive to electron beam illumination, Ar⁺ sputtering, UHV heating, and adsorption of reactive metals. The transformation of a hydroxylated surface to an Al-terminated surface occurs by high temperature annealing or Al deposition.     

Surface properties of LiCoO2, LiNiO2 and LiNi1−xCoxO2

The surface composition and chemical environment of LiCoO₂, hexagonal LiNiO_2, cubic LiNiO₂, and the mixed transition metal oxide LiNi_0.5Co_0.5O₂ have been determined by Auger electron and X-ray photoelectron spectroscopies. While the LiCoO₂ surface properties can easily be extrapolated from bulk composition, the nickel-containing materials are less straightforward. Their surface concentration tends to be depleted in lithium relative to that of the bulk and shows an atypical chemical environment for the constituent elements. The Ni 2p XPS photoemission suggests a near “ NiO-like” selvedge through the XPS binding energies and satellite structure which are essentially identical to that of NiO; the spectrum appears fairly insensitive to lithium concentration. Although there is little evidence for higher binding energy Ni³⁺ species or for an electron poor Ni^2.δ+-derived band structure in the XPS, the lattice oxygen is very electron-rich and yields among the lowest binding energies reported for a transition metal oxide. The nickel-containing lithium oxide selvedge is thus not simply “NiO” and the surface lithium cations have a measurable effect on the electronic structure even in their more highly depleted levels. This is explained in the context of the charge-transfer model of the oxide band structure.     

Impact of O2 exposure on surface crystallinity of clean and Ba terminated Ge(1 0 0) surfaces

In analogy with the case of Sr on Si [Y. Liang, S. Gan, M. Engelhard, Appl. Phys. Lett. 79 (2001) 3591], we studied surface crystallinity and oxidation behaviour of clean and Ba terminated Ge(1 0 0) surfaces as a function of oxygen pressure and temperature. The structural and chemical changes in the Ge surface layer were monitored by LEED, XPS and real-time RHEED. In contrast to the oxidation retarding effect, observed for 1/2 monolayer of Sr on Si, the presence of a Ba termination layer leads to a pronounced increase in Ge oxidation rate with respect to clean Ge. In fact, while the Ge(1 0 0) surface terminated with 1/2 ML Ba amorphizes for a pO₂ of 10⁻² Torr, LEED indicates that clean Ge forms a thin (4.5 Å), 1 × 1 ordered oxide upon aggressive O₂ exposure (150 Torr, 200 °C, 30 min). We briefly discuss the origins for the difference in behaviour between Ba on Ge and Sr on Si.     

In situ XPS study of Pd(1 1 1) oxidation. Part 1: 2D oxide formation in 10 mbar O2

The oxidation of the Pd(1 1 1) surface was studied by in situ XPS during heating and cooling in 3 × 10⁻³ mbar O₂. A number of adsorbed/dissolved oxygen species were identified by in situ XPS, such as the two dimensional surface oxide (Pd₅O₄), the supersaturated O_ads layer, dissolved oxygen and the R 12.2° surface structure.Exposure of the Pd(1 1 1) single crystal to 3 × 10⁻³ mbar O₂ at 425 K led to formation of the 2D oxide phase, which was in equilibrium with a supersaturated O_ads layer. The supersaturated O_ads layer was characterized by the O 1s core level peak at 530.37 eV. The 2D oxide, Pd₅O₄, was characterized by two O 1s components at 528.92 eV and 529.52 eV and by two oxygen-induced Pd 3d_5/2 components at 335.5 eV and 336.24 eV. During heating in 3 × 10⁻³ mbar O₂ the supersaturated O_ads layer disappeared whereas the fraction of the surface covered with the 2D oxide grew. The surface was completely covered with the 2D oxide between 600 K and 655 K. Depth profiling by photon energy variation confirmed the surface nature of the 2D oxide. The 2D oxide decomposed completely above 717 K. Diffusion of oxygen in the palladium bulk occurred at these temperatures. A substantial oxygen signal assigned to the dissolved species was detected even at 923 K. The dissolved oxygen was characterised by the O 1s core level peak at 528.98 eV. The “bulk” nature of the dissolved oxygen species was verified by depth profiling.During cooling in 3 × 10⁻³ mbar O₂, the oxidised Pd²⁺ species appeared at 788 K whereas the 2D oxide decomposed at 717 K during heating. The surface oxidised states exhibited an inverse hysteresis. The oxidised palladium state observed during cooling was assigned to a new oxide phase, probably the R 12.2° structure.