石墨烯晶圆的制备：从高品质到规模化

石墨烯晶圆是引领未来的战略材料,在集成电路、微机电系统和传感器等领域具有广阔的应用前景。实现石墨烯晶圆广泛应用的前提是高品质材料的规模化制备。可控性高、工艺兼容性强、成本低的化学气相沉积(chemical vapor deposition,CVD)法,是高品质石墨烯晶圆规模化制备的首选方法。本文将综述石墨烯晶圆的CVD制备进展：首先探讨石墨烯晶圆的制备需求,从实用牵引和应用场景出发,提出石墨烯晶圆的制备品质等级;随后重点介绍石墨烯的晶圆级制备方法和石墨烯晶圆材料的规模化制备技术;最后,对石墨烯晶圆可行的制备路线进行总结,并展望未来可能的发展方向。     

超疏水表面的制备方法

超疏水表面材料具有防水、防污、可减少流体的粘滞等优良特性,是目前功能材料研究的热点之一.其中超疏水表面的制备方法是研究的关键点.介绍和评述超疏水表面的制备方法,对该领域的发展方向进行了展望.     

石墨烯纤维材料的化学气相沉积生长方法

石墨烯纤维材料是以石墨烯为主要结构基元沿某一特定方向组装而成或由石墨烯包覆纤维状基元形成的宏观一维材料。根据组成基元的不同可将石墨烯纤维材料分为石墨烯纤维和石墨烯包覆复合纤维。石墨烯纤维材料在一维方向上充分发挥了石墨烯高强度、高导电、高导热等特点,在智能纤维与织物、柔性储能器件、便携式电子器件等领域具有广阔的应用前景。随着化学气相沉积(Chemical Vapor Deposition,CVD)制备石墨烯薄膜技术的发展,CVD技术也逐渐应用于石墨烯纤维材料的制备。利用CVD法制备石墨烯纤维可避免传统纺丝工艺中繁琐的氧化石墨烯(Graphene Oxide,GO)还原过程。同时,通过CVD法直接将石墨烯沉积至纤维表面可以保证石墨烯与纤维基底之间强的粘附作用,提高复合纤维的稳定性,同时可实现对石墨烯质量的有效调控。本文综述了石墨烯纤维材料的CVD制备方法,石墨烯纤维材料优异的力学、电学、光学性质及其在智能传感、光电器件、柔性电极等领域的应用,并展望了CVD法制备石墨烯纤维材料未来的发展方向。     

石墨烯玻璃透明薄膜加热特性

Graphene has become a research focus in recent years owing to its excellent characteristics, and glass is a commonly used material with high transparency and low cost. Graphene glass combines the excellent properties of both graphene and glass; graphene glass has not only high thermal conductivity, high electrical conductivity, and good surface hydrophobicity but also exhibits superior electrothermal conversion and wide-spectrum high-light-transmittance characteristics. Therefore, the study of graphene glass films is of theoretical value and practical significance. In this study, a high-purity glass-based (JGS1 quartz glass) multilayer graphene film was developed based on an atmospheric-pressure chemical vapor deposition (APCVD) method, and its electrical characteristics, light transmittance, and electrical heating characteristics were experimentally investigated in detail. The results show that graphene glass with different surface resistance values obtained through direct growth on a high-purity quartz glass substrate using the APCVD method, not only has excellent uniformity and quality, but also has considerably flat and high transmittance across the entire visible light region and exhibits excellent heating performance and fast response time. For graphene glass with a surface resistance of 1500 Ω·sq^-1, the light transmittance can reach 74%, and the saturation temperature can rise to 185 ℃ by applying a bias voltage of 40 V. In addition, when the resistance value of the graphene glass is 420 Ω·sq^-1, the graphene glass reaches a high saturation temperature of 325 ℃ in 40 s, and the corresponding heating rate can exceed 18 ℃·s^-1, achieving a significantly higher heating rate than other heating films at the same voltage. Compared with the polyethylene-terephthalate- (PET-) based and silicon-based graphene films obtained by the transfer, graphene glass has a higher saturation temperature, shorter thermal response time, and faster heating rate. Furthermore, graphene glass exhibits better heating cycle stability and longer-term heating stability at a constant voltage. In addition, an experiment using the graphene glass to thermally tune the wavelength of a vertical-cavity surface-emitting laser was conducted and gave good results. The position of the laser peak controlled by the graphene glass was red-shifted by 1.78 nm by applying a voltage of 20 V, and the wavelength tuning efficiency reached 0.059 nm·℃^-1. Compared with PET-based and silicon-based graphene films, the actual electrical heating capacity of graphene glass increased by 195%. These experimental findings demonstrate that graphene glass transparent films with excellent electric heating characteristics can be used in various transparent electric heating fields and have relatively wide application prospects.     

介电层上石墨烯的制备

石墨烯因其优异而独特的性能,自发现以来便受到了广泛的关注.为了实现石墨烯的进一步应用,可控制备大面积、高质量的石墨烯便成为研究人员需要首先攻克的难题.利用传统方法在金属基底上催化生长的石墨烯,需要先转移到介电层上才能进行后续的器件构筑.与之相比,介电层表面上直接生长石墨烯后,就可直接利用目前的硅加工工艺制备器件,从而避免因转移而引起的污染、破损,进而有望得到高质量、无污染的石墨烯样品.介绍了近年来介电层上直接生长石墨烯的研究进展,其中包括在各种传统介电层材料和新型六方氮化硼薄膜上制备石墨烯的各种方法.总结展望了介电层表面石墨烯制备的主要挑战及发展方向.     

气相反应对CVD生长石墨烯的影响

化学气相沉积法(CVD)制备的石墨烯薄膜具有质量高、均匀性好、层数可控且可放大等优点,近年来受到了学术界和工业界的广泛关注。在高温CVD生长过程中,除衬底表面的反应外,气相反应同样会影响石墨烯的生长行为和薄膜质量。本文将综述气相反应对CVD生长石墨烯的影响：首先对CVD体系内的气相传质过程和气相反应进行了详细讨论;随后系统介绍了基于气相调控提高石墨烯的结晶性、洁净度、畴区尺寸、层数和生长速度的相关策略及其机理;最后对气相反应影响CVD生长石墨烯的规律进行总结,并展望了未来可能的发展方向。     

聚3,4-乙烯二氧噻吩/石墨烯/钛电极的制备及其电化学性能

采用直流电弧等离子体喷射化学气相沉积法把石墨烯生长在钛(Ti)基底上,并采用电化学氧化聚合法在石墨烯表面沉积聚3,4-乙烯二氧噻吩(PEDOT),由此构造PEDOT/石墨烯/Ti电极。形貌及结构表征结果表明,电聚合200圈以上的PEDOT呈线状或泡沫状且均匀分布于石墨烯表面。电化学性能测试结果表明,PEDOT/石墨烯/Ti电极具有高的比电容和库伦效率;其电聚合次数为400圈时,与PEDOT/Ti电极相比,比电容提高42倍,其最大电势窗口可达1.4 V,而在0～1.2 V电势窗口范围内,扫描速度为10 mV·s-1时,比电容可达到269.6 mF·cm-2。     

超级电容器用石墨烯薄膜：制备、基元结构及表面调控

石墨烯薄膜是一种以石墨烯纳米片为基元结构的宏观体,通过合理的结构设计和表面修饰使其具有优异的电学、力学和热学性能,将在电化学储能、电子器件、健康和环保等领域具有潜在的应用。本文主要综述了从石墨烯基元调控到二维宏观膜组装以及石墨烯薄膜在超级电容器应用中的研究进展。主要介绍了石墨烯薄膜的简易制备方法,并详细介绍了通过对石墨烯基元的结构调控和表面修饰来优化石墨烯薄膜电化学性能的两大策略,最后对石墨烯薄膜应用所面临的挑战和未来的发展进行了总结与展望。     

石墨烯空心微球制备方法的研究进展

石墨烯被认为是一种颇具潜力的新型材料,具有优异的导电性能、力学性能以及大的比表面积,但石墨烯极易因为片层间的分子间作用力以及π-π作用而发生堆叠团聚。 构筑三维空心微球结构不仅能够有效阻止石墨烯片团聚,从而保证大的比表面积与优异的性质,还具有结构规整、尺寸可调的独特优势。 本文对近年来石墨烯空心微球的制备方法进行了阐述,主要按照模板法与无模板法两大类进行了整理与分析,又将模板法分为硬模板法与软模板法两类来叙述,对石墨烯空心微球的制备过程中应用到的多种技术进行了介绍与举例,并分别对硬模板法、软模板法、无模板法各自的优缺点进行了分析与总结。     

石墨烯薄膜的光化学还原制备与表征

采用光化学还原方法制备了图案化的石墨烯薄膜.研究了光还原氧化石墨烯薄膜(PRGO)的热稳定性和发光性质.热重分析(TGA)结果表明,光化学还原主要引起氧化石墨烯(GO)氧化基团的减少,而对GO内水含量影响较小;发光(PL)测试结果表明,不同激发条件下,PRGO的发光与GO相比表现出了不同的变化规律:在波长514 nm的光激发下,PRGO的发光强度比GO明显降低,同时伴随着发光峰峰位红移;而在波长830 nm的光激发下,PRGO的发光强度比GO略有增强,并且发光峰峰位无明显变化,此结果表明不同尺寸的碳团簇局域态(sp2C团簇)的光还原反应活性不同,这与GO特殊的能带结构密切相关.     

Superclean Growth of Graphene Using a Cold-Wall Chemical Vapor Deposition Approach

Chemical vapor deposition (CVD) has become a promising approach for the industrial production of graphene films with appealing controllability and uniformity. However, in the conventional hot-wall CVD system, CVD-derived graphene films suffer from surface contamination originating from the gas-phase reaction during the high-temperature growth. Shown here is that the cold-wall CVD system is capable of suppressing the gas-phase reaction, and achieves the superclean growth of graphene films in a controllable manner. The as-received superclean graphene film, exhibiting improved optical and electrical properties, was proven to be an ideal candidate material used as transparent electrodes and substrate for epitaxial growth. This study provides a new promising choice for industrial production of high-quality graphene films, and the finding about the engineering of the gas-phase reaction, which is usually overlooked, will be instructive for future research on CVD growth of graphene.     

生物质羟基磷灰石作为模板制备三维石墨烯

As a new 2D material with excellent chemical stability, good electric conductivity, and high specific surface area, graphene has been widely used in energy storage and conversion devices. However, 2D graphene layers are easily stacked, which may significantly reduce the surface area and degrade the excellent electrical properties of graphene. To avoid this, one of the most effective methods is to construct 3D graphene (3DG) with specific porous microstructures. Chemical vapor deposition (CVD) is an important method for the synthesis of high-quality 3DG, where templates play a defining role in controlling the structure and cost of 3DG. Metallic materials with 3D microstructures, such as nickel foam, have proven to be useful as substrates for the growth of high-quality 3DG. However, metal substrates are usually expensive, and the pickling solution generated after etching may cause environmental problems. Therefore, non-metallic substrate materials with lower costs have been investigated for the preparation of 3DG. Herein, we developed a novel template material, mammal bone ashes, for the CVD preparation of 3DG. Mammal bone ash is an inexpensive and abundant biomass hydroxyapatite. During the high-temperature CVD reaction, the bone ash powders were slightly sintered to form a continuous porous structure with graphene coating. The morphology of 3DG is inherited from the microstructure of bone ash templates. After removing the bone ash template with hydrochloric acid, the template-grown 3DG was obtained with a unique bicontinuous structure, i.e. both the graphene framework and the void space were continuous. In addition, the pickling solution of the bone ash templates after etching was exactly the same as that for the raw materials for the production of phosphoric acid to achieve high atom utilization. We further optimized the graphitization degrees, layer number, and porous morphology of 3DGs. The microstructure evolution of 3DG is highly relevant to the layer thickness and uniformity of graphene layers. A short growth time would lead to a non-uniform and thin layer of graphene, which is not able to support a complex 3D porous structure. In contrast, a uniform graphene layer with proper thickness is capable of forming a robust 3D architecture. In addition, the facile CVD method can be extended to a series of metal phosphate templates, including tricalcium phosphate [Ca₃(PO₄)₂], trimagnesium phosphate [Mg₃(PO₄)₂], and aluminum phosphate [AlPO₄]. 3DG with bicontinuous morphology is promising as a conductive frame material in electrochemical energy storage devices. As an illustration, high-performance Li-S batteries were fabricated by the uniform composition of an S cathode on 3DG. In comparison with heavily stacked 2D graphene sheets in reduced graphene oxide / S composite, the non-flat structure of 3DGs remained unchanged even after the harsh melt-diffusion process of high-viscosity liquid sulfur. The resulting 3DG/S cathode delivered a high specific capacity of ~550 mAh∙g^-1 at a high current rate (2C). Our work opens an avenue to the low-cost and high-utility production of 3D graphene, which could be integrated with the well-developed phosphorus chemical industry.     

Superclean Growth of Graphene Using a Cold‐Wall Chemical Vapor Deposition Approach

Chemical vapor deposition (CVD) has become a promising approach for the industrial production of graphene films with appealing controllability and uniformity. However, in the conventional hot‐wall CVD system, CVD‐derived graphene films suffer from surface contamination originating from the gas‐phase reaction during the high‐temperature growth. Shown here is that the cold‐wall CVD system is capable of suppressing the gas‐phase reaction, and achieves the superclean growth of graphene films in a controllable manner. The as‐received superclean graphene film, exhibiting improved optical and electrical properties, was proven to be an ideal candidate material used as transparent electrodes and substrate for epitaxial growth. This study provides a new promising choice for industrial production of high‐quality graphene films, and the finding about the engineering of the gas‐phase reaction, which is usually overlooked, will be instructive for future research on CVD growth of graphene.     

蓝宝石衬底上化学气相沉积法生长石墨烯

化学气相沉积(CVD)法是制备大面积、高质量石墨烯材料的主要方法之一,但存在衬底转移和碳固溶等问题,本文选用蓝宝石衬底弥补了传统CVD法的不足。利用CVD法在蓝宝石衬底上生长石墨烯材料,研究生长温度对石墨烯表面形貌和晶体质量的影响。原子力显微镜(AFM)、光学显微镜(OM)、拉曼光谱和霍尔测试表明,低温生长有利于保持材料表面的平整度,高温生长有利于提高材料的晶体质量。研究氢气和碳源对蓝宝石衬底表面刻蚀作用机理,发现氢气对蓝宝石衬底有刻蚀作用,而单纯的碳源不能对衬底产生刻蚀效果。在1200 ℃下,直径为50 mm的晶圆级衬底上获得平整度和质量相对较好的石墨烯材料,室温下载流子迁移超过1000 cm²·V^-1·s^-1。     

Electro‐oxidized Monolayer CVD Graphene Film Transducer for Ultrasensitive Impedimetric DNA Biosensor

We report the effect of electrochemical anodization on the properties of monolayer graphene as the main aim of this research and consequently using the resulting label‐free impedimetric biosensor for DNA sequences detection. Monolayer graphene was grown by chemical vapor deposition (CVD) with methane as precursor on copper foil, transferred onto a glassy carbon electrode and electrochemically anodized. Raman spectroscopy and X‐Ray photo electron spectroscopy revealed enhancement of defect density, roughness and formation of C−O−C, C−O−H and C=O functional groups after anodization. Amine‐terminated poly T probe was linked covalently to the carboxylic groups of anodized graphene by the zero‐length linker to fabricate the impedance‐based DNA biosensor. The anodized graphene electrode demonstrated a superior performance for electrochemical impedance detection of DNA. The DNA biosensor showed a large linear dynamic range from 2.0×10⁻¹⁸ to 1.0×10⁻¹² M with a limit of detection of 1.0×10⁻¹⁸ M using electrochemical impedance spectroscopy (EIS) method. Equivalent circuit modeling shows that DNA hybridization is detected through a change in charge transfer resistance.     

Layer Dependence of Graphene for Oxidation Resistance of Cu Surface

We studied the oxidation resistance of graphene-coated Cu surface and its layer dependence by directly growing monolayer graphene with different multilayer structures coexisted, di-minishing the influence induced by residue and transfer technology. It is found that the Cu surface coated with the monolayer graphene demonstrate tremendous difference in oxidation pattern and oxidation rate, compared to that coated with the bilayer graphene, which is considered to be originated from the strain-induced linear oxidation channel in monolayer graphene and the intersection of easily-oxidized directions in each layer of bilayer graphene, respectively. We reveal that the defects on the graphene basal plane but not the boundaries are the main oxidation channel for Cu surface under graphene protection. Our finding indi-cates that compared to putting forth efforts to improve the quality of monolayer graphene by reducing defects, depositing multilayer graphene directly on metal is a simple and effective way to enhance the oxidation resistance of graphene-coated metals.     

石墨烯玻璃:玻璃表面上石墨烯的直接生长

玻璃是一种历史悠久、用途广泛的无定形硅酸盐材料,而石墨烯则是近年来发现的仅由碳原子组成的二维层状材料。石墨烯具有超高的机械强度、导电性、导热性和透明性,恰好与传统的玻璃形成互补。将石墨烯与玻璃结合在一起,在保持透明性的基础上,同时赋予普通玻璃导电性、导热性和表面疏水性,具有非常重要的实际意义和理论价值。相比于液相涂膜或者转移的方法,直接在玻璃表面生长石墨烯能够从根本上避免由于污染和破损引起的石墨烯性能的下降,从而发展出一种新型材料——石墨烯玻璃。本文介绍了我们研究组在各种玻璃表面直接生长石墨烯的研究进展,其中包括石墨烯在固态耐高温玻璃和熔融态玻璃表面的高温生长,以及利用等离子体辅助手段实现石墨烯在普通玻璃表面的低温生长,并以此为基础发展出多种基于石墨烯玻璃的应用实例。总结展望了石墨烯玻璃的制备和应用的未来挑战与发展方向。