气相反应对CVD生长石墨烯的影响

化学气相沉积法(CVD)制备的石墨烯薄膜具有质量高、均匀性好、层数可控且可放大等优点,近年来受到了学术界和工业界的广泛关注。在高温CVD生长过程中,除衬底表面的反应外,气相反应同样会影响石墨烯的生长行为和薄膜质量。本文将综述气相反应对CVD生长石墨烯的影响：首先对CVD体系内的气相传质过程和气相反应进行了详细讨论;随后系统介绍了基于气相调控提高石墨烯的结晶性、洁净度、畴区尺寸、层数和生长速度的相关策略及其机理;最后对气相反应影响CVD生长石墨烯的规律进行总结,并展望了未来可能的发展方向。     

超洁净石墨烯薄膜的制备方法

化学气相沉积(Chemical vapor deposition,CVD)法制备的石墨烯薄膜具有质量高、可控性好、可放大等优点,近年来受到了学术界和工业界的广泛关注。然而,近期研究结果表明,在高温CVD生长石墨烯的过程中,伴随着许多副反应,这些副反应会导致石墨烯薄膜表面沉积大量的无定形碳污染物,造成石墨烯薄膜的“本征污染”现象。同时,这些污染物的存在会导致转移后的石墨烯薄膜表面更脏,对石墨烯材料和器件的性能带来严重影响。这也是CVD石墨烯薄膜的性能一直无法媲美机械剥离石墨烯的重要原因之一。事实上,超洁净生长方法制备得到的超洁净石墨烯薄膜在诸多指标上都给出了目前文献报道的最好结果,代表着石墨烯薄膜材料制备技术的发展前沿。本文首先对CVD法制备石墨烯过程中表面污染物的形成机理进行分析,然后综述了超洁净石墨烯薄膜的制备方法,并列举了超洁净石墨烯薄膜的优异性质。最后,总结并展望了超洁净石墨烯未来可能的发展方向和规模化制备面临的机遇与挑战。     

新型石墨烯基LED器件：从生长机理到器件特性

III族氮化物因具有禁带宽度大、击穿电压高、电子饱和漂移速度大、稳定性高等优异特性而广泛应用在发光二极管(LED)、激光器以及高频器件中。目前III族氮化物薄膜通常是异质外延生长在蓝宝石衬底表面,但是由于蓝宝石与III族氮化物之间存在较大的晶格失配与热失配,使得外延生长的III族氮化物内部存在较大的应力与较高的位错密度,严重影响了器件性能;与此同时,蓝宝石衬底热导率差,限制了其在大功率器件方面的应用。近年来研究发现,石墨烯作为外延生长缓冲层,能够有效解决蓝宝石衬底与外延III族氮化物薄膜之间由于晶格失配和热失配导致的高应力与高位错密度等问题,进而获得了高品质薄膜,并提升了器件的性能。本文综述了石墨烯/蓝宝石衬底上III族氮化物生长与LED器件构筑的研究现状,着重介绍了本课题组提出的一种新型外延衬底—石墨烯/蓝宝石衬底的特点,阐明了III族氮化物在该新型衬底上的生长机理,总结了其对III族氮化物质量提升的作用,并对其发展前景进行了展望。     

介电层上石墨烯的制备

石墨烯因其优异而独特的性能,自发现以来便受到了广泛的关注.为了实现石墨烯的进一步应用,可控制备大面积、高质量的石墨烯便成为研究人员需要首先攻克的难题.利用传统方法在金属基底上催化生长的石墨烯,需要先转移到介电层上才能进行后续的器件构筑.与之相比,介电层表面上直接生长石墨烯后,就可直接利用目前的硅加工工艺制备器件,从而避免因转移而引起的污染、破损,进而有望得到高质量、无污染的石墨烯样品.介绍了近年来介电层上直接生长石墨烯的研究进展,其中包括在各种传统介电层材料和新型六方氮化硼薄膜上制备石墨烯的各种方法.总结展望了介电层表面石墨烯制备的主要挑战及发展方向.     

气相助剂辅助绝缘衬底上石墨烯生长：现状与展望

借助化学气相沉积(chemical vapor deposition,CVD)技术在绝缘衬底上直接生长的石墨烯薄膜,在能源存储/转换等领域有着广阔的应用前景。然而,绝缘衬底表面石墨烯的生长呈现成核密度高、畴区尺寸小、生长速率低等特点,获得的石墨烯薄膜往往具有较高的晶界密度和较低的层数均匀度,严重制约着石墨烯基器件性能的发挥。在反应体系中引入气相助剂可有效降低碳源裂解和石墨烯生长的能垒,从而实现石墨烯品质与生长速率的提升。本文综述气相助剂辅助绝缘衬底上石墨烯制备的方法：首先对绝缘衬底上石墨烯的生长行为进行分析;随后着重介绍几类常见的气相助剂辅助石墨烯生长的策略和机理;最后,总结绝缘衬底上制备高品质石墨烯存在的挑战,并对未来的发展方向进行展望。     

聚3,4-乙烯二氧噻吩/石墨烯/钛电极的制备及其电化学性能

采用直流电弧等离子体喷射化学气相沉积法把石墨烯生长在钛(Ti)基底上,并采用电化学氧化聚合法在石墨烯表面沉积聚3,4-乙烯二氧噻吩(PEDOT),由此构造PEDOT/石墨烯/Ti电极。形貌及结构表征结果表明,电聚合200圈以上的PEDOT呈线状或泡沫状且均匀分布于石墨烯表面。电化学性能测试结果表明,PEDOT/石墨烯/Ti电极具有高的比电容和库伦效率;其电聚合次数为400圈时,与PEDOT/Ti电极相比,比电容提高42倍,其最大电势窗口可达1.4 V,而在0～1.2 V电势窗口范围内,扫描速度为10 mV·s-1时,比电容可达到269.6 mF·cm-2。     

石墨烯纤维材料的化学气相沉积生长方法

石墨烯纤维材料是以石墨烯为主要结构基元沿某一特定方向组装而成或由石墨烯包覆纤维状基元形成的宏观一维材料。根据组成基元的不同可将石墨烯纤维材料分为石墨烯纤维和石墨烯包覆复合纤维。石墨烯纤维材料在一维方向上充分发挥了石墨烯高强度、高导电、高导热等特点,在智能纤维与织物、柔性储能器件、便携式电子器件等领域具有广阔的应用前景。随着化学气相沉积(Chemical Vapor Deposition,CVD)制备石墨烯薄膜技术的发展,CVD技术也逐渐应用于石墨烯纤维材料的制备。利用CVD法制备石墨烯纤维可避免传统纺丝工艺中繁琐的氧化石墨烯(Graphene Oxide,GO)还原过程。同时,通过CVD法直接将石墨烯沉积至纤维表面可以保证石墨烯与纤维基底之间强的粘附作用,提高复合纤维的稳定性,同时可实现对石墨烯质量的有效调控。本文综述了石墨烯纤维材料的CVD制备方法,石墨烯纤维材料优异的力学、电学、光学性质及其在智能传感、光电器件、柔性电极等领域的应用,并展望了CVD法制备石墨烯纤维材料未来的发展方向。     

化学气相沉积法合成石墨烯的转移技术研究进展

化学气相沉积(CVD)法合成石墨烯已为人们广泛研究采用。其中,如何将生长的石墨烯材料转移到与各种器件匹配的基底上是十分重要的科学问题。本文从方法、特点和结果等方面综述了由CVD法合成石墨烯的几种主要转移技术的研究进展,并对转移技术的未来做出了展望。     

石墨烯对镍钛形状记忆合金耐腐蚀性能的影响

利用化学气相沉积法在镍钛形状记忆合金表面原位生长出石墨烯,拟提高镍钛形状记忆合金的抗腐蚀性能。通过X射线光电子能谱、拉曼光谱与扫描电镜等手段对其表征,分析石墨烯修饰后的合金表面结构和形貌。在人工唾液环境中探究了石墨烯对镍钛形状记忆合金的腐蚀速率、细胞毒性和金属释放的影响。结果表明,石墨烯在金属基体和腐蚀介质之间可以起到物理屏蔽作用,可明显地降低金属基体发生腐蚀的速率,对镍钛合金具有较强的保护能力。     

生物质羟基磷灰石作为模板制备三维石墨烯

As a new 2D material with excellent chemical stability, good electric conductivity, and high specific surface area, graphene has been widely used in energy storage and conversion devices. However, 2D graphene layers are easily stacked, which may significantly reduce the surface area and degrade the excellent electrical properties of graphene. To avoid this, one of the most effective methods is to construct 3D graphene (3DG) with specific porous microstructures. Chemical vapor deposition (CVD) is an important method for the synthesis of high-quality 3DG, where templates play a defining role in controlling the structure and cost of 3DG. Metallic materials with 3D microstructures, such as nickel foam, have proven to be useful as substrates for the growth of high-quality 3DG. However, metal substrates are usually expensive, and the pickling solution generated after etching may cause environmental problems. Therefore, non-metallic substrate materials with lower costs have been investigated for the preparation of 3DG. Herein, we developed a novel template material, mammal bone ashes, for the CVD preparation of 3DG. Mammal bone ash is an inexpensive and abundant biomass hydroxyapatite. During the high-temperature CVD reaction, the bone ash powders were slightly sintered to form a continuous porous structure with graphene coating. The morphology of 3DG is inherited from the microstructure of bone ash templates. After removing the bone ash template with hydrochloric acid, the template-grown 3DG was obtained with a unique bicontinuous structure, i.e. both the graphene framework and the void space were continuous. In addition, the pickling solution of the bone ash templates after etching was exactly the same as that for the raw materials for the production of phosphoric acid to achieve high atom utilization. We further optimized the graphitization degrees, layer number, and porous morphology of 3DGs. The microstructure evolution of 3DG is highly relevant to the layer thickness and uniformity of graphene layers. A short growth time would lead to a non-uniform and thin layer of graphene, which is not able to support a complex 3D porous structure. In contrast, a uniform graphene layer with proper thickness is capable of forming a robust 3D architecture. In addition, the facile CVD method can be extended to a series of metal phosphate templates, including tricalcium phosphate [Ca₃(PO₄)₂], trimagnesium phosphate [Mg₃(PO₄)₂], and aluminum phosphate [AlPO₄]. 3DG with bicontinuous morphology is promising as a conductive frame material in electrochemical energy storage devices. As an illustration, high-performance Li-S batteries were fabricated by the uniform composition of an S cathode on 3DG. In comparison with heavily stacked 2D graphene sheets in reduced graphene oxide / S composite, the non-flat structure of 3DGs remained unchanged even after the harsh melt-diffusion process of high-viscosity liquid sulfur. The resulting 3DG/S cathode delivered a high specific capacity of ~550 mAh∙g^-1 at a high current rate (2C). Our work opens an avenue to the low-cost and high-utility production of 3D graphene, which could be integrated with the well-developed phosphorus chemical industry.     

石墨烯玻璃:玻璃表面上石墨烯的直接生长

玻璃是一种历史悠久、用途广泛的无定形硅酸盐材料,而石墨烯则是近年来发现的仅由碳原子组成的二维层状材料。石墨烯具有超高的机械强度、导电性、导热性和透明性,恰好与传统的玻璃形成互补。将石墨烯与玻璃结合在一起,在保持透明性的基础上,同时赋予普通玻璃导电性、导热性和表面疏水性,具有非常重要的实际意义和理论价值。相比于液相涂膜或者转移的方法,直接在玻璃表面生长石墨烯能够从根本上避免由于污染和破损引起的石墨烯性能的下降,从而发展出一种新型材料——石墨烯玻璃。本文介绍了我们研究组在各种玻璃表面直接生长石墨烯的研究进展,其中包括石墨烯在固态耐高温玻璃和熔融态玻璃表面的高温生长,以及利用等离子体辅助手段实现石墨烯在普通玻璃表面的低温生长,并以此为基础发展出多种基于石墨烯玻璃的应用实例。总结展望了石墨烯玻璃的制备和应用的未来挑战与发展方向。     

Layer Dependence of Graphene for Oxidation Resistance of Cu Surface

We studied the oxidation resistance of graphene-coated Cu surface and its layer dependence by directly growing monolayer graphene with different multilayer structures coexisted, di-minishing the influence induced by residue and transfer technology. It is found that the Cu surface coated with the monolayer graphene demonstrate tremendous difference in oxidation pattern and oxidation rate, compared to that coated with the bilayer graphene, which is considered to be originated from the strain-induced linear oxidation channel in monolayer graphene and the intersection of easily-oxidized directions in each layer of bilayer graphene, respectively. We reveal that the defects on the graphene basal plane but not the boundaries are the main oxidation channel for Cu surface under graphene protection. Our finding indi-cates that compared to putting forth efforts to improve the quality of monolayer graphene by reducing defects, depositing multilayer graphene directly on metal is a simple and effective way to enhance the oxidation resistance of graphene-coated metals.     

金属衬底上石墨烯的控制生长和微观形貌的STM表征

目前化学气相沉积(CVD)方法在不同的金属基底上大规模生长获得石墨烯得到了广泛的应用; 同时扫描隧道显微镜(STM)做为一种强大的精细直观的研究手段可以用于表征金属衬底上石墨烯的微观形貌, 指导石墨烯的控制生长. 本文侧重于Cu箔、Pt 箔和Ni 衬底上石墨烯的控制生长、表面微观形貌、表面缺陷态、堆垛形式的阐述, 得到结论: (1) 两种溶碳量较低的金属(Cu, Pt)上, 石墨烯的生长都符合表面催化的生长机制, 同时层间的范德华相互作用也可以诱导双层石墨烯的生长; (2) 衬底粗糙度的增加可以使石墨烯的电子态去简并化, 从而破坏石墨烯面内π键共轭结构, 导致部分碳原子转变为sp³杂化; (3) 原生的褶皱是由于界面热膨胀系数失配所导致; (4) Pt 箔表面石墨烯的平整度要远优于Cu箔表面的石墨烯, 且不同晶面共存的基底对于石墨烯的连续性并没有产生显著的影响.     

金属衬底在石墨烯化学气相沉积生长中的作用

以过渡金属为催化衬底的化学气相沉积法(Chemical Vapor Deposition,CVD)已经可以制备与机械剥离样品相媲美的石墨烯,是实现石墨烯工业应用的关键技术之一。原子尺度理论研究能够帮助我们深刻理解石墨烯生长机理,为实验现象提供合理的解释,并有可能成为将来实验设计的理论指导。本文从理论计算的角度,总结了各种金属衬底在石墨烯CVD生长过程中的各种作用与相应的机理,包括在催化碳源裂解、降低石墨烯成核密度等,催化加快石墨烯快速生长,修复石墨烯生长过程中产生的缺陷,控制外延生长石墨烯的晶格取向,以及在降温过程中石墨烯褶皱与金属表面台阶束的形成过程等。在本文最后,我们对当前石墨烯生长领域中亟需解决的理论问题进行了深入探讨与展望。     

石墨烯玻璃透明薄膜加热特性

Graphene has become a research focus in recent years owing to its excellent characteristics, and glass is a commonly used material with high transparency and low cost. Graphene glass combines the excellent properties of both graphene and glass; graphene glass has not only high thermal conductivity, high electrical conductivity, and good surface hydrophobicity but also exhibits superior electrothermal conversion and wide-spectrum high-light-transmittance characteristics. Therefore, the study of graphene glass films is of theoretical value and practical significance. In this study, a high-purity glass-based (JGS1 quartz glass) multilayer graphene film was developed based on an atmospheric-pressure chemical vapor deposition (APCVD) method, and its electrical characteristics, light transmittance, and electrical heating characteristics were experimentally investigated in detail. The results show that graphene glass with different surface resistance values obtained through direct growth on a high-purity quartz glass substrate using the APCVD method, not only has excellent uniformity and quality, but also has considerably flat and high transmittance across the entire visible light region and exhibits excellent heating performance and fast response time. For graphene glass with a surface resistance of 1500 Ω·sq^-1, the light transmittance can reach 74%, and the saturation temperature can rise to 185 ℃ by applying a bias voltage of 40 V. In addition, when the resistance value of the graphene glass is 420 Ω·sq^-1, the graphene glass reaches a high saturation temperature of 325 ℃ in 40 s, and the corresponding heating rate can exceed 18 ℃·s^-1, achieving a significantly higher heating rate than other heating films at the same voltage. Compared with the polyethylene-terephthalate- (PET-) based and silicon-based graphene films obtained by the transfer, graphene glass has a higher saturation temperature, shorter thermal response time, and faster heating rate. Furthermore, graphene glass exhibits better heating cycle stability and longer-term heating stability at a constant voltage. In addition, an experiment using the graphene glass to thermally tune the wavelength of a vertical-cavity surface-emitting laser was conducted and gave good results. The position of the laser peak controlled by the graphene glass was red-shifted by 1.78 nm by applying a voltage of 20 V, and the wavelength tuning efficiency reached 0.059 nm·℃^-1. Compared with PET-based and silicon-based graphene films, the actual electrical heating capacity of graphene glass increased by 195%. These experimental findings demonstrate that graphene glass transparent films with excellent electric heating characteristics can be used in various transparent electric heating fields and have relatively wide application prospects.     

蓝宝石衬底上化学气相沉积法生长石墨烯

化学气相沉积(CVD)法是制备大面积、高质量石墨烯材料的主要方法之一,但存在衬底转移和碳固溶等问题,本文选用蓝宝石衬底弥补了传统CVD法的不足。利用CVD法在蓝宝石衬底上生长石墨烯材料,研究生长温度对石墨烯表面形貌和晶体质量的影响。原子力显微镜(AFM)、光学显微镜(OM)、拉曼光谱和霍尔测试表明,低温生长有利于保持材料表面的平整度,高温生长有利于提高材料的晶体质量。研究氢气和碳源对蓝宝石衬底表面刻蚀作用机理,发现氢气对蓝宝石衬底有刻蚀作用,而单纯的碳源不能对衬底产生刻蚀效果。在1200 ℃下,直径为50 mm的晶圆级衬底上获得平整度和质量相对较好的石墨烯材料,室温下载流子迁移超过1000 cm²·V^-1·s^-1。