密度泛函理论研究SinMn (n=2～14)团簇的结构和电子性质

采用密度泛函理论中的广义梯度近似对SinMn (n=2～14) 团簇的几何构型进行优化,并对能量、频率和电子性质进行了计算. 结果表明,当n≥10时,Mn原子完全陷入Si原子形成的笼内.二阶能量差分、分裂能和垂直电离势都表明Si5Mn和Si12Mn是稳定的团簇,且12是团簇的幻数.通过对电子性质的分析发现Si12Mn团簇具有较高的化学稳定性.布局数分析表明,在Si5Mn团簇中Mn原子的磁矩(3.923 μB)是最大的.较多的电荷转移以及Mn原子的4s, 3d态和Si原子的3s, 4p态的较强杂化是导致Mn原子磁矩减小的原因.当n≥7时,SinMn 的总磁矩是1 μB.     

GenMn(n=1-13)团簇的稳定结构、电子性质和磁性研究

基于全电子的密度泛函理论,对GenMn (n=1-13)团簇的结构和电子、磁特性进行了研究,结果表明：GenMn(n=1-7)团簇的最稳定结构是在Gen+1团簇的最稳态结构的基础上用Mn原子替代一个角位的Ge原子获得;纯锗团簇的稳态结构为空心的笼状或扁长的棒状构型,而GenMn(n=8-13)趋于以二十面体为基础生长,即掺杂Mn可以使锗团簇趋于密实结构生长;除Ge3Mn团簇的总磁矩是5μB外,其他掺杂团簇总磁矩都是3μB或1μB,而且主要是由Mn原子3d轨道电子提供的,且3d轨道的磁矩大小与4s,3d轨道间电子的转移程度有着直接的关系;计算得到的Mn原子居于中心的六棱柱形结构的Ge12Mn团簇,无论是几何结构还是化学活性方面都是最稳定的．     

RuSi_n(n=1～6)团簇的结构、稳定性和电子性质的密度泛函研究

运用杂化密度泛函理论方法在(U)B3LYP/Lan L2DZ水平研究了Ru Sin(n=1~6)团簇体系的稳定结构及电子性质.结果发现:Ru Sin(n=1~6)团簇基本保持了纯硅团簇的框架.对原子平均束缚能和分裂能的计算表明,Ru Si6团簇是Ru Sin(n=1~6)团簇中热力学稳定性最强的.对自然电荷分布的研究结果发现,Ru Sin(n=2,4~6)团簇的最低能结构出现电荷反转现象.HOMO-LUMO能隙的研究结果表明掺入钌原子后团簇的化学活性增强了,且Ru Si的化学活性是Ru Sin(n=1~6)团簇最强的.通过对团簇磁矩的研究发现,Ru Si和Ru Si3团簇具有了磁性,其余团簇的总磁矩为零,且Ru Sin(n=1~6)团簇中各原子对团簇总磁矩的贡献不同.     

Ge_nMn(n=1-13)团簇的稳定结构、电子性质和磁性研究

基于全电子的密度泛函理论,对GenMn(n=1-13)团簇的结构和电子、磁特性进行了研究,结果表明:GenMn(n=1-7)团簇的最稳定结构是在Gen+1团簇的最稳态结构的基础上用Mn原子替代一个角位的Ge原子获得;纯锗团簇的稳态结构为空心的笼状或扁长的棒状构型,而GenMn(n=8-13)趋于以二十面体为基础生长,即掺杂Mn可以使锗团簇趋于密实结构生长;除Ge3Mn团簇的总自旋磁矩是5μB外,其他掺杂团簇总自旋磁矩都是3μB或1μB,而且主要是由Mn原子3d轨道电子提供的,且3d轨道的磁矩大小与4s,3d轨道间电子的转移程度有着直接的关系;计算得到的Mn原子居于中心的六棱柱形结构的Ge12Mn团簇,无论是几何结构还是化学活性方面都是最稳定的.     

Ge_nMn(n≤8)团簇的电子结构与磁性的密度泛函理论研究

采用密度泛函理论下广义梯度近似方法,对Mn掺杂Ge基半导体团簇Ge_nMn(n≤8)的结构与磁性进行了理论研究.结果表明:Ge_nMn(n≤8)的最稳定构型与相应的Ge_(n+1)团簇相似.Mn掺杂后团簇的原子平均结合能与纯锗团簇比较近似;能量二次差分表明:Ge_3Mn和Ge_5Mn团簇较相邻团簇表现出较高的稳定性;当n=1,3和6时,HMO-LUMO能隙较大,n=2时,能隙较小,说明GeMn、Ge_3Mn和Ge_6Mn具有相对较好的化学稳定性,而Ge_2Mn具有较高的化学活性.对Ge_nMn(n≤8)团簇的磁性研究发现,除Ge_8Mn的总磁矩为1μB外,其他团簇的总磁矩均为3μB,且团簇的磁性主要来源于Mn原子.     

V掺杂ZnO团簇的结构和磁性质

本文采用第一性原理密度泛函理论系统的研究了V原子单掺杂和双掺杂(ZnO)12团簇的结构和磁性质。我们考虑了三种掺杂方式：替代掺杂,外掺杂和内掺杂。单掺杂时,替代掺杂团簇是最稳定结构,而对于双掺杂,外掺杂团簇是最稳定结构。团簇磁矩主要来自V-3d态的贡献,4s和4p态也贡献了一小部分磁矩。由于轨道杂化,相邻的Zn和O原子上也产生少量自旋。V原子掺杂团簇的总磁矩与掺杂位置有关,说明V掺杂(ZnO)12团簇在可调磁矩的磁性材料领域有潜在应用价值。     

V掺杂ZnO团簇的结构和磁性质

本文采用第一性原理密度泛函理论系统的研究了V原子单掺杂和双掺杂(ZnO)_(12)团簇的结构和磁性质.我们考虑了三种掺杂方式:替代掺杂,外掺杂和内掺杂.单掺杂时,替代掺杂团簇是最稳定结构,而对于双掺杂,外掺杂团簇是最稳定结构.团簇磁矩主要来自V-3d态的贡献,4s和4p态也贡献了一小部分磁矩.由于轨道杂化,相邻的Zn和O原子上也产生少量自旋.V原子掺杂团簇的总磁矩与掺杂位置有关,说明V掺杂(ZnO)_(12)团簇在可调磁矩的磁性材料领域有潜在应用价值.     

二元等比锰硫MnnSn(n=1-7)团簇的结构与性质研究

采用密度泛函理论系统研究了二元等比锰硫团簇MnnSn(n=1-7)的结构和物理性质。首先得到了体系的最低能量结构以及相应的亚稳态同分异构体,讨论了团簇几何结构的生长模式和结构稳定性。通过电荷转移和差分密度分析发现Mn原子和S原子之间离子键和共价键的共存效应可以有效提高团簇结构稳定性。当原子数为奇数和偶数时,锰硫团簇的磁矩分别为5uB和淬灭状态,呈现出奇特的二元奇偶振荡现象,通过布局分析和态密度进一步探索了团簇磁性的来源和具体分布情况。     

Fe掺杂ZnSe团簇结构和磁性质

采用密度泛函理论研究了Fe原子单掺杂和双掺杂(ZnSe)12团簇的结构、电子性质和磁性质.我们考虑了三种掺杂方式:替代掺杂,外掺杂和内掺杂.单掺杂时,外掺杂团簇是最稳定结构;而双掺杂时,内掺杂团簇是最稳定结构.团簇磁矩主要来自Fe-3d态的贡献,4s和4p态也贡献了一小部分磁矩.由于轨道杂化,相邻的Zn和Se原子上也产生少量自旋.不同掺杂团簇的总磁矩不同,在可调磁矩的磁性材料领域有潜在应用价值.     

RuSin（n=1～6）团簇的结构、稳定性和电子性质的密度泛函研究

运用杂化密度泛函理论方法在(U)B3LYP/LanL2DZ水平研究了RuSin(n=1~6)团簇体系的稳定结构及电子性质．结果发现：RuSin(n=1~6)团簇基本保持了纯硅团簇的框架.对原子平均束缚能和分裂能的计算表明,RuSi6团簇是RuSin(n=1~6)团簇中热力学稳定性最强的.对自然电荷分布的研究结果发现,RuSin(n=2,4～6)团簇的最低能结构出现电荷反转现象. HOMO-LUMO能隙的研究结果表明掺入钌原子后团簇的化学活性增强了,且RuSi的化学活性是RuSin(n=1~6)团簇最强的。通过对团簇磁矩的研究发现,RuSi和RuSi3团簇具有了磁性,其余团簇的总磁矩为零,且RuSin(n=1～6)团簇中各原子对团簇总磁矩的贡献不同.     

Influence of sintering conditions on structural,thermal, electric and ferroelectric properties of Na0.5Bi0.5TiO3 ceramics

Na_0.5Bi_0.5TiO₃ ceramics were prepared by a conventional solid-state reaction method and by a hot-pressing route. The influence of sintering conditions on structural, thermal, dielectric and ferroelectric properties of these ceramics was investigated. All obtained samples exhibited a single perovskite phase. It was shown that the sintering conditions significantly influence the properties under investigation. This includes changes in the value of the electric permittivity ? and dielectric loss tanδ, a shift of T_m and T_d and change of the ferroelectric properties. These effects are mainly related to volatility of the Na and Bi components during the sintering process along with formation of their compensating charge defects, which leads to local structure change.     

Dielectric,thermal and Raman spectroscopy studies of lead-free (Na0.5Bi0.5)1−xSrxTiO3 (x = 0, 0.04 and 0.06) ceramics

ABSTRACT

Lead-free (Na_0.5Bi_0.5)_1?xSr_xTiO₃ (x = 0, 0.04 and 0.06) ceramics with relative densities above 97% were prepared by solid-state synthesis process. Their dielectric, thermal and Raman properties were studied. X-ray diffraction analysis shows perovskite structure with rhombohedral symmetry at room temperature. Sr doping of Na_0.5Bi_0.5TiO₃ (NBT) results in an increase of the dielectric permittivity, diffusing of the permittivity maximum and its shift toward lower temperatures. The temperature of the rhombohedral–tetragonal phase transition indicated by the differential scanning calorimetry (DSC) peak and relaxational dielectric anomaly near the depolarization temperature are also shifted toward lower temperatures. The observed increase and broadening of the permittivity maximum, enhancement of the dielectric relaxation near the depolarization temperature, broadening of the DSC anomaly related to the rhombohedral–tetragonal phase transition and broadening of the Raman bands with increasing Sr content are attributed to the increase of the degree of cationic disorder and evident enhancement of the relaxor-like features in NBT–xST. This enhancement could play a positive role in the improvement of the piezoelectric performance of NBT-based ceramics.     

Improved ferroelectric,dielectric and magnetic properties with La- and Mn- doped Bi5Ti3FeO15 thin films

A series of La and Mn co-doped Bi₅Ti₃FeO₁₅ (BLTFMO) thin films were prepared by spin-coating deposition route. X-ray diffraction, atomic force microscopy and scanning electron microscopy were used to characterize the structures of these BLTFMO thin films. Ferromagnetic properties are obtained as the La-doping content is 0, 0.1, 0.2, and 0.3 with the transition temperature of 127.2 K, 65.1 K, 48.1 K, and 7.9 K, respectively. Well-defined ferroelectric loops are found in all these BLTFMO films, and a higher remnant polarization of 27.84, 24.21 and 24.02 μC/cm² is obtained in the 0.1, 0.2 and 0.3 La-doped films, respectively. A weak dielectric dispersion for the BLTFMO without La-doping, a strong one in 0.1, 0.2, 0.3 and 0.4 La doped films as indicated by the appearance of a dielectric loss peak, and a weak dispersion in 0.6, 0.8 and 1 La doped ones are demonstrated.     

Structural,optoelectronic and thermoelectric properties of antiperovskite compounds Ae3PbS (Ae = Ca,Sr and Ba): A first principles study

In the last years, alkaline-earth based antiperovskite compounds with small semiconductor band gap have been proven to be promising candidate for optoelectronic and thermoelectric applications. In this work, the structural, electronic, optical and thermoelectric properties of Ae₃PbS (Ae = Ca, Sr and Ba) compounds have been predicted using first principles calculations based on the full-potential linearized augmented plane-wave (FP-LAPW) method and semiclassical Boltzmann transport theory. Exchange-correlation effect is treated with the generalized gradient approximation with Perdew–Burke–Ernzerhof scheme (GGA-PBE) and Tran–Blaha modified Becke–Johnson exchange potential. The lattice constant of considered materials increases as Ae goes in order from Ca to Ba and the hardness slightly decreases in this order. Ca₃PbS and Sr₃PbS are semiconductor with direct band gap of 0.199 eV and 0.116 eV, respectively, while Ba₃PbS is nearly metallic. Important optical responses of studied antiperovskites are found in the visible and ultraviolet energy range. Finally, the thermoelectric properties including Seebeck coefficient, electrical conductivity, thermal conductivity, power factor and figure of merit are calculated. Obtained results show that Ca₃PbS and Sr₃PbS could be candidate for applications in thermoelectric generators at low and moderate temperatures due to their high figure of merit values.     

Structural,elastic, thermodynamic and electronic properties of LuX (X = N,Bi and Sb) compounds: first principles calculations

ABSTRACT

The structural, electronic, elastic and thermodynamic properties of LuX (X = N, Bi and Sb) based on rare earth into phases, Rocksalt (B1) and CsCl (B2) have been investigated using full-potential linearized muffin-tin orbital method (FP-LMTO) within density functional theory. Local density approximation (LDA) for exchange-correlation potential and local spin density approximation (LSDA) are employed. The structural parameters as lattice parameters a₀, bulk modulus B, its pressure derivate B’ and cut-off energy (E_c) within LDA and LSDA are presented. The elastic constants were derived from the stress–strain relation at 0 K. The thermodynamic properties for LuX using the quasi-harmonic Debye model are studied. The temperature and pressure variation of volume, bulk modulus, thermal expansion coefficient, heat capacities, Debye temperature and Gibbs free energy at different pressures (0–50 GPa) and temperatures (0–1600 K) are predicted. The calculated results are in accordance with other data.     

多组分复合薄膜的光学、电学、机械性能及其应用

复合薄膜因其可具有比单组份薄膜更加优异的性能而得到广泛的应用。通过以膜层的防护、催化、电学、光学以及力学性能等复合思想为切入点,阐述了通过膜层的复合掺杂旨在增强合金的抗腐蚀性,提高润滑摩擦性能,改善膜层的导电性能以及进行光学薄膜折射率和光谱吸收的调控,增强膜层的硬度及拉伸强度等机械性能的方法。对国内外的相关前沿成果进行简要介绍,并对复合薄膜的未来发展进行展望,为相关领域的研究提供参考。     

Pressure dependences of elastic and lattice dynamic properties of AlAs from ab initio calculations

Ab initio calculations, based on norm-conserving nonlocal pseudopotentials and density functional theory (DFT), are performed to investigate the structural, elastic, dielectric, and vibrational properties of aluminum arsenide AlAs with zinc-blende (B3) structure and nickel arsenide (B8₁) structure under hydrostatic pressure. Firstly, the path for the phase transition from B3 to B8₁ is confirmed by analyzing the energies of different structures, which is in good agreement with previous theoretical results. Secondly, we find that the elastic constants, bulk modulus, static dielectric constants, and the optical phonon frequencies are varying in a nearly linear manner under hydrostatic pressure. What is more, the softening mode of transversal acoustic mode at X point supports the phase transition in AlAs.     

The pressure dependences of elastic and lattice dynamic properties of AlAs from ab initio calculations

Ab initio calculations,based on norm-conserving nonlocal pseudopotentials and density functional theory(DFT),are performed to investigate the structural,elastic,dielectric,and vibrational properties of aluminum arsenide(AlAs) with a zinc-blende(B3) structure and a nickel arsenide(B81) structure under hydrostatic pressure.Firstly,the path for the phase transition from B3 to B81 is confirmed by analyzing the energies of different structures,which is in good agreement with previous theoretical results.Secondly,we find that the elastic constants,bulk modulus,static dielectric constants,and the optical phonon frequencies vary in a nearly linear manner under hydrostatic pressure.What is more,the softening mode of the transversal acoustic mode at the X point supports the phase transition in AlAs.     

Electronic,dielectric and mechanical properties of MoS2/SiC hybrid bilayer: A first principle study

The electronic, mechanical and dielectric properties of lateral MoS₂/SiC heterobilayer are investigated using first principles calculations. Among various stacking conformations, the energetically favorable stackings namely AA₂ and AB′₁ have been considered in the present study. The band gap of the heterobilayer shows reduction as compared to constituent monolayers which also remains stacking dependent. The electronic band-gap is further tunable by applying mechanical strain and perpendicular electric field that rendered heterostructures from semiconductor to metal at critical value of applied strain/field. The stacking of heterobilayer strongly influence its mechanical properties e.g. ultimate tensile strength of considered two favorable stacking differ by more than 50%; the ultimate tensile strain of 17% and 21% respectively has been calculated for two different stackings. The static dielectric constant also shows tunability on heterostructuring the constituent monolayers as well as applying strain and field. These tunable properties of MoS₂/SiC may be useful for the device applications at nanoscale.     

Pressure-dependent mechanical and thermodynamic properties of newly discovered cubic Na2He

Recently for the first time, a stable compound of He and Na (Na₂He) is predicted at high pressure. We explore the pressure-dependent elastic, mechanical and thermodynamic properties of this newly discovered Na₂He by using ab initio technique. The calculation presents good accordance between the theoretical and experimental lattice parameters. Though the most stable structure of Na₂He is found at 300?GPa, present study ensures the mechanical stability of this compound up to 500?GPa. The study of Cauchy pressure, Pugh's ratio, and Poisson's ratio implies the ductile manner of Na₂He up to 500?GPa. According to the value of Poisson's ratio the bonding force exists in Na₂He is central. The study of Zener anisotropy factor indicates that Na₂He is an anisotropic material but near at 300?GPa approximately isotropic nature of Na₂He is revealed. The study of the bulk modulus, shear modulus, Young's modulus and Vickers hardness implies that the hardness of Na₂He can be improved by applying external pressure. However, the Debye temperature, melting temperature and minimum thermal conductivity of Na₂He are also calculated and discussed at different pressures.