Evaporation induced diameter control in fiber crystal growth by micro‐pulling‐down technique: Bi4Ge3O12

Diameter self‐control was established in Bi₄Ge₃O₁₂ fiber crystal growth by micro‐pulling‐down technique. In accordance with Bi₂O₃‐GeO₂ phase diagram, the diameter was controlled due to compensation of solidification with evaporation of volatile Bi₂O₃ self‐flux charged into the crucible with excess. The crucibles had capillary channels of 310 or 650 μm in outer diameter. The crystals up to 400 mm long and 50‐300 μm in diameter were grown at pulling‐down rates of 0.04‐1.00 mm/min. The melt composition and the pulling rate were generally only two parameters determining solidification rate. As a result, crystals with uniform (± 10%) diameter and aspect ratio up to 10⁴ were produced without automation of the process. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis and crystal growth of sillenite phases in the Bi2O3 ‐ TiO2 ‐ Nb2O5 system

The synthesis of Bi₂O₃‐Nb₂O₅ sillenite phase (BNbO) and the solubility of this phase with Bi₁₂TiO₂₀ was investigated by solid‐state reaction synthesis and niobium doped Bi₁₂TiO₂₀ (BTO:Nb) crystals were grown by the Top Seeded Solution Growth (TSSG) technique. The structures of polycrystalline compounds were checked by X‐ray powder diffraction method at room temperature. The correct composition of the sillenite phase stabilized with niobium was determined as Bi₁₂[Nb_0.17Bi_0.83]O_19.7 (BNbO) with unit cell parameter a = 10.261(2) Å. The system BTO‐BNbO is poorly soluble, but niobium doped BTO crystals were grown from the liquid composition 10Bi₂O₃ : xTiO₂ : (1‐x)/2 Nb₂O₅, with x = 0.95 and 0.90. A niobium concentration limit in the liquid phase is established in order to grow BTO:Nb with good crystalline quality. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and optical characterization of cerium and lead‐doped Bi12TiO20 sillenite single crystals

Bi₁₂TiO₂₀ (BTO) single crystals doped with PbO and CeO₂ were grown by the Top Seeded Solution Growth (TSSG) technique from the liquid phase with nominal compositions of 10Bi₂O₃ : (1–x)TiO₂ : x PbO and 10Bi₂O₃ : (1–x)TiO₂ : xCeO₂ with x = 0.25 and 0.10. No growth‐related difficulties were encountered other than those typical of sillenite crystals. Samples with good optical quality were obtained and were characterized by optical absorption, dark current, spectral photocurrent dependence, optical activity and electro‐optic coefficient measurements. A comparison is made of the results of the optical measurements of doped and undoped BTO crystals. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Effect of axial vibration on Bi12SiO20 crystal growth by vertical Bridgman technique

Bi₁₂SiO₂₀ single crystals have been grown successfully by vertical Bridgman technique. During the crystal growth process, different axial vibration amplitudes of 50 μm, 70 μm and 100 μm were applied with the same vibration frequency of 50 Hz. The effect of different axial vibration amplitudes on quality of the as‐grown Bi₁₂SiO₂₀ single crystals was discussed. The crystals have been characterized by X‐ray rocking curve optical and absorption spectrum. The experimental results reveal that the axial vibration amplitude has a pronounced effect on quality of the as‐grown Bi₁₂SiO₂₀ single crystals. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Influence of doping on OH absorption in LiNbO3 crystals

Undoped, Cr doped and Mg, Cr codoped LiNbO₃ crystals were grown by conventional Czochralski technique. Comparative study was carried out using Fourier transform infrared (FTIR) and UV‐Visible spectroscopy. Infrared optical absorption for OH^– ion has been used to study the effect of dopants on the crystals. The peak position of OH^– shift to 3535 cm^‐1 for Mg, Cr codoped crystals compared to 3484 cm^‐1 for undoped and Cr doped crystals. Prominent absorption bands are found in the visible region centered at 480 nm (20833 cm^‐1) and 653 nm (15313 cm^‐1) in Cr doped crystals. Whereas in Mg, Cr codoped crystals these broad absorption bands are red shifted to 517 nm (19342 cm^‐1) and 678 nm (14749 cm^‐1). UV cutoff in Cr doped crystals shift towards higher wavelength compared to undoped LiNbO₃ crystals. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Single‐crystal growth and characterization of mullite‐type orthorhombic Bi2M4O9 (M = Al3+, Ga3+, Fe3+)

Pure and homogeneous single crystals of orthorhombic mullite‐type Bi₂M₄O₉ (M = Al³⁺, Ga³⁺, Fe³⁺), and a mixed Bi₂Fe_1.7Ga_2.3O₉ crystal from an equimolar Ga/Fe composition were grown by the top seeded solution growth (TSSG) method. All these compounds melt incongruently in the range of about 800 and 1100 °C. In case of bismuth gallate and ferrate inclusion‐free crystals with dimensions up to several cubic centimeters can be grown. Limited solubility in Bi₂O₃ and the high steepness of the liquidus curve are the reasons for getting only small imperfect bismuth aluminate crystals. In contrast to ceramic materials preparation reported in literature, divalent calcium and strontium could not be incorporated into the mullite‐type structure during the melt growth process. Several fundamental physical properties like heat capacity, thermal expansion, heat conductivity, elastic constants, high‐pressure behavior and oxygen diffusivity were determined by different research groups using single‐crystalline samples from the as‐grown materials. Furthermore, the refractive indices of Bi₂Ga₄O₉ were measured in the range of 0.430 and 0.700 μm. Such as many other bismuth containing compounds the refractive indices of Bi₂Ga₄O₉ are larger than 2, and Bi₂Ga₄O₉ is an optic biaxial positive crystal. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Improved Single Crystal Growth of the Boron Sillenite “Bi24B2O39” and Investigation of the Crystal Structure

The boron sillenite, up to now known as the 12:1 compound Bi₂₄B₂O₃₉ in the system Bi₂O₃ – B₂O₃ andcrystallizing in the space group I23, melts incongruently at 655 °C only about 25 K above the eutectic tie line and corresponding to a steep liquidus line. Single crystals with dimensions larger then 1 cm ³ have been successfully grown in [100], [110], and [111] direction by an improved Top Seeded Solution Growth (TSSG) technique equipped with crucible weighing, accelerated crystal rotation technique and air‐cooled pulling rod. The structure of the boron sillenite was analyzed by X‐ray diffraction method, which was possible due to the high crystalline quality achieved. A defect‐free sublattice corresponding to a Bi‐O framework is isostructural with all sillenites, but a 2 Å environment around the origin is occupied by different cations with different population coefficients. The best calculation results in the formula Bi_24.5BO_38.25 which is more Bi‐rich than the 12:1 assumption.     

Vertical Bridgman Growth and Scintillation Properties of Doped Bi4Si3O12 Crystals

Pure BSO and Ce, Nd, Eu, Cr and Fe doped BSO crystals of high optical quality with 20x20x100mm³ have been grown by the vertical Bridgman method. After measuring their transmission spectra, light outputs, FWHM energy resolutions and excitation-emission spectra, we summarized and explained the laws of doped effects on the scintillation characteristics. we can expect that Eu may be the most promising dopant candidate of the doped elements for improving the scintillation characteristics of BSO crystal.     

Growth,structure, and superconducting properties of Bi2Sr2Ca2Cu3O10 and (Bi,Pb)2Sr2Ca2Cu3O10‐y crystals

Large and high‐quality single crystals of both Pb‐free and Pb‐doped high temperature superconducting compounds (Bi_1‐xPb_x)₂Sr₂Ca₂Cu₃O_10‐y (x = 0 and 0.3) were grown by means of a newly developed “Vapour‐Assisted Travelling Floating Zone” technique (VA‐TSFZ). This modified zone‐melting technique was realised in an image furnace and allowed for the first time to grow Pb‐doped crystals by compensating for the Pb losses occurring at high temperature. Crystals up to 3×2×0.1 mm³ were successfully grown. Post‐annealing under high pressure of O₂ (up to 10 MPa at T = 500°C) was undertaken to enhance T_c and improve the homogeneity of the crystals. Structural characterisation was performed by single‐crystal X‐ray diffraction (XRD) and the structure of the 3‐layer Bi‐based superconducting compound was refined for the first time. Structure refinement showed an incommensurate superlattice in the Pb‐free crystals. The space group is orthorhombic, A2aa, with cell parameters a = 27.105(4) Å, b = 5.4133(6) Å and c = 37.009(7) Å. Superconducting studies were carried out by A.C. and D.C. magnetic measurements. Very sharp superconducting transitions were obtained in both kinds of crystals (ΔT_c ≤ 1 K). In optimally doped Pb‐free crystals, critical temperatures up to 111 K were measured. Magnetic critical current densities of 2�10⁵ A/cm² were measured at T = 30 K and μ₀H = 0 T. A weak second peak in the magnetisation loops was observed in the temperature range 40‐50 K above which the vortex lattice becomes entangled. We have measured a portion of the irreversibility line (0.1‐5 Tesla) and fitted the expression for the melting of a vortex glass in a 2D fluctuation regime to the experimental data. Measurements of the lower critical field allowed to obtain the dependence of the penetration depth on temperature: the linear dependence of λ(T) for T < 30 K is consistent with d‐wave superconductivity in Bi‐2223. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Crystal growth of the CdGa2(1‐x)Cr2xSe4 compounds by chemical transport method

Single crystals of CdGa_2(1‐x)Cr_2xSe₄ compounds for 0 ≤ x ≤ 1 have been grown by using the chemical vapor transport technique in a closed system. The transporting agent was CdCl₂ in a proportion of 0.75 mg/cc of capsule. The starting material was previously synthetized. The structural characterization on the crystals were done by powder x‐ray diffraction studies. The results show three different phases for various Cr concentration ranges: spinel structure for x ≥ 0.7, rombohedral for 0.6 ≥ x ≥ 0.5 and tetragonal for 0.4 ≥ x ≥ 0. That is, the chromium dilution in the CdCr₂Se₄ compound by Ga atoms produces very significant changes in the structural atomic arrangement. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Photoluminescence and radiation damage in W,Mg, Ca doped Bi4Ge3O12 crystals

Spectral properties and radiation damage in W, Mg and Ca doped Bi₄Ge₃O₁₂ (W:BGO, Mg:BGO, Ca:BGO) crystals before and after thermal treatment and gamma‐ray (γ‐) or ultraviolet (UV) radiation were studied. The absorption and the photoluminescence (PL) spectra of doped BGO crystals in visible region were measured. Before γ or UV radiation, the emission intensity of W:BGO crystal is stronger than that of pure BGO at about 500 nm. After γ radiation (10k Gy), the emission intensities of doped BGO are all weaker than pure BGO under identically condition. However, the emission intensity of W:BGO is stronger than that of pure BGO after UV exposure (10k Gy). Thermal treated (annealed in N₂ at 550 °C for 6 h) W:BGO has shown a much stronger emission intensity than others. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

A new nonlinear optical crystal: Bi2O2(OH)(NO3)

The nonlinear optical (NLO) properties of Bi₂O₂(OH)(NO₃) crystals have been reported for the first time. Bi₂O₂(OH)(NO₃) crystals with dimensions of 1.3×1.2×0.1 mm³ have been grown by hydrothermal method, and the crystals characterized by X‐ray powder diffraction (XRD), SEM and IR. The measured second harmonic generation (SHG) effect of Bi₂O₂(OH)(NO₃) was about 7 times that of KDP. The mechanism responsible for the large SHG of Bi₂O₂(OH)(NO₃) was explained according to its structure. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Concentration distribution of Nd3+ In Nd:Gd3Ga5O12 crystals studied by optical absorption method

Nd:Gd₃Ga₅O₁₂ crystals with different concentrations of Nd³⁺ were grown by Czochralski method, their absorption spectra were measured at room temperature. By using the optical absorption method, the effective distribution coefficient k_eff for Nd³⁺ in GGG was fitted to be 0.40±0.01, which is higher than that of Nd³⁺ in YAG. The 808nm absorption cross‐section was calculated to be 4.0±0.2×10^‐20cm^‐2. The lengthways and radial concentration distribution of Nd³⁺ in the crystals were also analyzed and discussed. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Growth and morphology of the single crystals of thermoelectric oxide material NaxCoO2

We have grown single crystals of recently discovered thermoelectric oxide material Na_xCoO₂ using NaCl flux. Crystals of sizes upto 1.5 x 1.5 x 1.5 mm³ having different morphological habits were reproducibly grown. The atomic force microscopic studies show that along c‐axis crystals grow via 2D layer‐by‐layer mechanism. The X‐ray diffraction analyses show that grown crystals are rich in Na content as compared to the starting charge indicating that NaCl flux also acts as a source of Na. The resistivity of the crystals exhibited a linear temperature dependence in the region between 30 and 300 K. © 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim     

Growth of Bi<Subscript>12</Subscript>GeO<Subscript>20</Subscript> and Bi<Subscript>12</Subscript>SiO<Subscript>20</Subscript> crystals by the low-thermal gradient Czochralski technique

Bi₁₂SiO₂₀ crystals have been grown for the first time by the low-thermal gradient Czochralski technique in the 〈111〉 and 〈110〉 directions. The conditions for reproducible crystal growth with a high-quality polyhedral faceted front are found. The systematic features of shaping Bi₁₂SiO₂₀ and Bi₁₂GeO₂₀ crystals, grown by the low-thermal gradient Czochralski technique, are compared. The defect formation in these crystals is studied and their optical homogeneity is analyzed by interferometry.     

Preparation of crystalline fibres of codoped BaAl2O4:Eu2+:Cr3+

Phosphor material BaAl₂O₄:Eu²⁺, Cr³⁺ with varying concentrations of Cr co‐doping were prepared by solid‐state synthesis method. Crystalline fibres were obtained by controlled annealing temperature. Synthesized compositions were characterized for their phase and crystallinity by powder x‐ray diffraction. The crystalline morphology was investigated using SEM analysis. High resolution transmission electron microscopy (HRTEM) in image and diffraction modes was used to investigate the microstructure. The effect of Cr doping on quality and morphology of grown crystals was investigated. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Sb2Te3 Single Crystals Doped with Chromium Atoms

Chromium-doped Sb₂Te₃ single crystals were prepared from elements of semiconductor purity using a modified Bridgman method. The samples of these crystals were characterized by means of X-ray diffraction analysis, measurements of the reflectivity in the plasma resonance frequency range ω_p, of the Hall constant R_H and electrical conductivity σ. It was found that the incorporation of Cr atoms into the Sb₂Te₃ crystal lattice reduces the volume of the unit cell, whereas the values of ω_p and R_H (i.e. the concentration of holes) remain unaltered and the values of σ decrease with increasing chromium content. This effect is qualitatively explained by an interaction of incorporated Cr atoms with antisite defects of Sb₂Te₃ crystal lattice. The In (R_Hσ) vs. In T dependences show that the dominant mechanism of scattering of free charge carriers in the studied crystals is the scattering by acoustic phonons; the presence of chromium atoms increases the scattering rate by ionized impurities.     

Optical Properties of Bi2Se3‐xAsx Single Crystals

Bi₂Se_3‐xAs_x single crystals with the As content of c_As = 0 to 2.0x10¹⁹ atoms/cm³ prepared from the elements of 5N purity by means of a modified Bridgman method were characterized by measurements of infrared reflectance and transmittance. Values of the plasma resonance frequency omega_p, optical relaxation time tau, and high‐frequency permittivity were determined by fitting the Drude‐Zener formulas to the reflectance spectra. It was found that the substitution of As atoms for Se atoms in the Bi₂Se₃ crystal lattice leads to a decrease in the omega_p values. This effect is accounted for by a model of point defects in the crystal lattice of Bi₂Se_3‐xAs_x. The dependences of the absorption coefficient K on the energy of incident photons were determined from the transmittance spectra. The optical width of the energy gap is found to decrease with increasing As content. The values of the exponent b from the relation of K ∼ lamda^b for the long‐wavelength absorption edge range within the interval 2.0 to 2.3, i.e. the dominant scattering mechanism of free current carriers in Bi₂Se_3‐xAs_x crystals is the scattering by acoustic phonons.     

Growth and Optical Absorption of Photorefractive Bi12SiO20 Crystals Doped with Zn and Cd and Co-doped with P

Single crystals of Bi₁₂SiO₂₀ (BSO) Zn- and Cd-doped and co-doped with P have been grown by Czochralski technique and optimum conditions for producing optically homogeneous crystals were established. The transmission and reflection spectra have been measured in the range 0.38–0.85 μm and absorption coefficients have been determined. The Zn dopants have been found to bleach the crystals and decrease the transmission shoulder, whereas Cd dopant increases the absorption and makes the shoulder well pronounced. P-doping strongly decreases the transmission shoulder and shifts absorption to shorter wavelengths. The absorption Coefficient of BSO doped with P has been found to decrease with dopant concentration increase up to 3 mol% P and above it increases with P concentration in the whole studied range. Zn + P- and Cd + P-co-doping (P concentration in the crystal less than 3 mol%) decreases strongly the absorption coefficient and shifts the spectra to short wavelengths.     

Crystal Growth and Spectroscopic Characterisation of BiB3O6:RE3+ (RE3+ = Pr3+, Nd3+, Gd3+, Er3+, Tm3+)

Large single crystals of optical quality of BiB₃O₆:RE³⁺ (RE³⁺ = Pr³⁺, Nd³⁺, Gd³⁺, Er³⁺, Tm³⁺) were grown from nearly stoichiometric melts using the top‐seeding growth technique to dimensions up to 12 x 12 x 18 mm³. Absorption spectra were measured in the wavelength range from 10000 cm^‐1 to 30000 cm^‐1 with an absorption spectrometer to estimate the doping concentration of RE³⁺. For the determination of the phonon energies and the quenching behaviour of the host lattice IR and Raman spectra were recorded.