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1.
稀土Tm3+/Yb3+共掺杂氟氧化物上转换可见发光   总被引:1,自引:0,他引:1  
制备了稀土Tm3+/Yb3+共掺杂氟氧化物上转换发光材料(60TeO2-10AlF3-10PbF2-10NaF-2Tm2O3-8Yb2O3),在980nm红外光泵浦激发下,测量了样品的吸收谱、上转换荧光发射谱和上转换发光强度与激光泵浦功率的对数关系.观察到峰值为477nm蓝光和651nm红光可见发射,分别是稀土Tm3+的激发态1G4→3H6,1G4→3F4跃迁;在806nm附近,观察到较强的红外发射(3H4→3H6),分析了稀土Tm3+/Yb3+共掺杂氟氧化物上转换可见发射机制,证实了稀土Tm3+上转换发射是在稀土Yb3+的敏化作用下,通过能量传递(ET)和激发态吸收(ESA),实现了激发态1G4向基态3H6、激发态3F4跃迁的三光子吸收过程和激发态3H4→3H6的双光子吸收过程.  相似文献   

2.
The BaY2F8 crystals doped with different concentrations of Tm3+ ions were prepared by the temperature gradient technique (TGT). X‐ray powder diffraction was applied to analyze the phase. The cracking phenomenon along (010) and (100) planes of the crystals grown by temperature gradient technique was studied on the basis of the structure of BaY2F8 crystals. The absorption spectra were measured and investigated in the ultraviolet‐visible and near‐infrared ranges at room temperature. Several characteristic absorption bands of Tm3+‐doped BaY2F8 crystal were observed. The emission and excitation spectra were obtained and investigated at room temperature and 12 K, showing the characteristic emission peaks of Tm3+ ions. The temperature dependence of Photoluminescence curve was also investigated in the range of 12–296 K. The luminescence intensity of emission bands decreased with increasing temperature, while the effective bandwidth increased. The up‐conversion spectrum excited at 650 nm was recorded and up‐conversion mechanism was analyzed in detail. The result showed the purple, green and yellow emissions corresponding to 3P13F3, 1D23H5 and 3P01G4 transitions, respectively.  相似文献   

3.
Bi2Se3‐xAsx single crystals with the As content of cAs = 0 to 2.0x1019 atoms/cm3 prepared from the elements of 5N purity by means of a modified Bridgman method were characterized by measurements of infrared reflectance and transmittance. Values of the plasma resonance frequency omegap, optical relaxation time tau, and high‐frequency permittivity were determined by fitting the Drude‐Zener formulas to the reflectance spectra. It was found that the substitution of As atoms for Se atoms in the Bi2Se3 crystal lattice leads to a decrease in the omegap values. This effect is accounted for by a model of point defects in the crystal lattice of Bi2Se3‐xAsx. The dependences of the absorption coefficient K on the energy of incident photons were determined from the transmittance spectra. The optical width of the energy gap is found to decrease with increasing As content. The values of the exponent b from the relation of K ∼ lamdab for the long‐wavelength absorption edge range within the interval 2.0 to 2.3, i.e. the dominant scattering mechanism of free current carriers in Bi2Se3‐xAsx crystals is the scattering by acoustic phonons.  相似文献   

4.
Colour centers in YAlO3:Pr3+ crystals originating under xenon lamp or y–radiation and oxidizing annealing are considered. The nature of colour centers under these treatments is similar in nominally pure and Pr3+ containing crystals but the intensity of induced absorption lines is higher in activated crystals which assumably is associated with valent transitions of Pr ions.  相似文献   

5.
黄彦林  赵广军 《人工晶体学报》2006,35(2):288-293,305
本试验测试了Er3 掺杂钨酸铅晶体(PbWO4:Er3 )的吸收光谱,依据J-O理论,首次计算报道了光谱项特征:J-O强度参数、量子荧光效率、荧光分支比等,Ω2=3.75×10-20cm2,Ω4=0.67×10-20cm2,Ω6=0.41×10-20cm2。计算证实,PWO:Er3 中几乎有80%的激发能量非辐射跃迁转移致4I13/2能级,4I13/2的计算寿命是5200μs,J-O计算显示,在PWO中产生4I13/2→4I15/2和发射1.53μm.有高的几率。讨论了不同浓度Er3 掺杂对于吸收系数和PbWO4晶体光学吸收边的影响,讨论了Er3 掺杂PbWO4晶体的光致发光和X射线激发发光光谱,PbWO4:Er3 晶体中存在着从PbWO4基质到Er3 离子的能量传递,发光光谱的分析表明,这种能量传递是共振能量传递。  相似文献   

6.
本文报道了室温下飞秒激光辐照Tm∶YAG晶体的紫外光上转换荧光。Tm3+荧光的强度与泵浦光的功率之间的依赖关系揭示了晶体的上转换过程由三光子吸收过程所主导。研究表明上能级粒子的增加来自于Tm3+吸收一个泵浦光子跃迁到3H4能级后再吸收两个泵浦光子,然后离子跃迁至下能级产生上转换荧光。  相似文献   

7.
Thulium-doped gadolinium vanadate (Tm:GdVO4) single crystal has been successfully grown by a modified Czochralski (CZ) technique. Effective distribution coefficient of Tm was determined to be 0.74. Absorption characterization was performed in the 800 nm region and the maximum absorption peak was found at 799 nm for p polarization. Fluorescence spectra for tuning at the maximum absorption were obtained around 1.8-2.0µm region with 100 nm bandwidth. This suggests that a Tm:GdVO4 crystal is expected as a new promising LD pumped solid-state laser in the 2µm region.  相似文献   

8.
采用离子注入的方法在氮化铝薄膜中实现pr3和Tm3元素的单掺杂和共掺杂.以Raman光谱为主要表征手段,对离子注入过程中薄膜内部的应力变化进行研究;以阴极荧光为主要表征手段,对其低温和室温下的发光特性进行研究.Raman光谱的结果显示,离子注入过程使得薄膜内部应力下降,而退火过程使得薄膜内部应力升高.阴极荧光光谱结果显示,AIN:Pr3+主要跃迁峰位于528 nm;AIN:Tm3+主要跃迁峰位位于467 nm;AIN:Pr3+,Tm3+主要跃迁峰位位于528 nm和467 nm.AIN:Tm3+的低温光谱显示,与1I6和1D2两个能态相关的跃迁峰相对强度会随着温度出现急剧变化,由此表明在Tm3+之间存在与温度相关的相互作用.  相似文献   

9.
The absorption spectra of undoped Y2SiO5 crystals were studied before and after γ‐irradiation. After γ‐irradiation, the additional absorption peaks at 260‐270 and 320nm were observed in as‐grown and H2‐annealed Y2SiO5 crystal, but it did not occur in air‐annealed Y2SiO5 crystal. These absorption peaks were attributed to F color centers and O hole centers, respectively. Owing to more oxygen vacancies and color centers in H2‐annealed Y2SiO5 crystal than that in as‐grown Y2SiO5 crystal after γ‐irradiation, the additional absorption peaks were more intense in the former than that in the latter. With the irradiation dose increasing from 20 to 220kGy, the intensity of additional absorption peaks increased. © 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim  相似文献   

10.
Single crystals of lithium tantalate (LiTaO3) doped with Pr, Nd + Yb and Tm were grown by the Czochralski method. A thermal system with 50 mm diameter iridium crucible and two different afterheaters (active and passive) was checked with respect to temperature distribution in a pulling region. The obtained crystals were up to 20 mm in diameter and up 50 mm in length. Crystals were poled, and the Curie temperature was determined for specimens cut of from different parts of single crystals. The polarized absorption spectra, time resolved emission spectra and emission lifetime of Pr3+ doped LiTaO3 crystals were measured. An intense emission from the 3P0 level was observed. Optical properties of the Yb3+ ions excited by energy transfer from Nd3+ ions have been researched for LiTaO3:Nd, Yb crystals.  相似文献   

11.
The work is devoted to investigation of stable color centers (CC) that are created in Gd3Ga5O12 (GGG) crystals under irradiation with γ-quanta (E = 1.25 MeV, D = 105 Gy ) as well as transient CC created in the crystals under irradiation with pulsed electron beam (E = 0.25 MeV, pulse duration 10 ns, fluence 1012 cm-2, time interval of registration 0-500 ns). On the basis of the performed study of optical absorption spectra of the as-grown and irradiated crystals it was established the correlation between a defect subsystem of as-grown crystals and a type of CC induced by radiation in the crystals. The role of Ca2+ dopant ions in the processes of CC formation is examined. Models of the stable and transient CC are proposed. (© 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

12.
采用泡生法生长了115 kg级大尺寸钛宝石(Ti:Al2 O3)晶体,晶体外形完整无开裂,制备了口径达?300 mm的高质量大口径钛宝石单晶样品.在X射线和α粒子激发下测试了晶体的闪烁发光性能.结果表明,Ti:Al2 O3晶体的闪烁发光包含近红外和近紫外发光.近红外发光来源于Ti3+特征发射,效率较高,衰减时间慢.近紫...  相似文献   

13.
在LiNbO3中掺进ZnO和Fe2O3,以Czochralski技术生长Zn(7mol;):Fe(0.03;):LiNbO3,Zn(3mol;):Fe(0.03;):LiNbO3和Fe(0.03;):LiNbO3晶体.测试晶体的吸收光谱,Zn:Fe:LiNbO3晶体的吸收边相对Fe:LiNbO3晶体发生紫移.测试晶体的红外光谱,Zn(7mol;):Fe:LiNbO3晶体OH-吸收峰移到3529cm-1.测试晶体抗光致散射能力,Zn(3mol;):Fe:LiNbO3晶体抗光致散射能力比Fe:LiNbO3晶体提高一个数量级,Zn(7mol;):Fe:LiNbO3晶体比Fe:LiNbO3晶体高二个数量级.测试晶体的衍射效率和响应时间,Zn:Fe:LiNbO3晶体响应时间缩短,衍射效率降低.对吸收边和OH-吸收峰移动的机理,以及Zn:Fe:LiNbO3晶体抗光致散射能力增强的机理进行了研究.  相似文献   

14.
This paper deals with Pr‐doped and Pr, Si‐codoped YAlO3 single crystal growth by the micro‐pulling‐down method and investigation of their spectroscopic and scintillating properties. The Pr3+ 5d ‐4f radioluminescence intensity is more than 10 times higher than that of Bi4Ge3O12 standard sample, but the Si‐codoping decreases it. Absorption spectra of as‐grown and air‐annealed Si,Pr‐codoped YAlO3 samples show along with an onset of 4f ‐5d transition round 230 nm the induced absorption band at 400 nm which possibly related to a hole center absorption (Pr4+ or O). Thermoluminescence measurements above the room temperature were performed in order to monitor deep electron traps. Strong concentration dependence of thermoluminescence was observed for Pr:YAlO3 glow curves. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)  相似文献   

15.
Nd‐doped gadolinium aluminium tetraborate, NdxGd1‐xAl3(BO3)4 (NGAB), crystallizes with x = 0.1 in the trigonal system with point group 32, conforming space group R32. They were grown using flux method, of large sizes and good optical quality. The unit cell constants were a = 0.93057 (6) and c = 0.72481 (3) nm, and z = 1. The measured absorption of the NGAB is compared to Judd‐Ofelt (JO) theory. When applied, the JO theory of parity‐forbidden electric‐dipole transitions of rare earth ions on noncentrosymmetric sites demonstrates good agreement. A measured band gap of the eigentransition was about 4.00 eV. The fitted intensity parameters Ot (t = 2, 4, and 6) were 2.446 × 10‐20, 2.266 × 10‐20 and 2.598 × 10‐20 cm2. Both the emission properties of the sub‐stable 4F3/2 state with the level lifetime of 506.20 μs and a fluorescence spectrum corresponding to the transition 4F3/24I11/2 were studied. The results indicate the pass band of laser for potential applications in practice.  相似文献   

16.
通过分析铝酸钇(YAP)晶体产生孪晶、开裂、色心和弥散性散射的原因,探讨了克服这些缺陷和问题的技术途径.采用提拉法生长了b轴方向的掺钕和掺铥铝酸钇(Nd:YAP和Tm:YAP)晶体,通过温场系统、生长工艺参数和切割工艺的优化,克服了晶体开裂的问题,晶体直径达到46mm;通过真空退火工艺,既显著减轻了紫外和可见区的色心吸收,又减小了晶体的应力,有助于克服晶体在加工过程中的开裂问题.晶体生长实验和晶体的显微观察表明:YAP晶体中的弥散状散射很可能同熔体中组分的均匀性有关,通过增大晶体的直径,增强强迫对流有助于减轻晶体中的弥散状散射.高质量b轴Nd:YAP和a轴Tm:YAP晶体已分别实现二极管泵浦大于140W的1.079μm和大于10W的1.99μm激光输出.  相似文献   

17.
采用坩埚下降法生长了Nd3 掺杂浓度分别为 15 %、8%和 2 .5 %原子分数的Sr3 Ga2 Ge4O14 晶体 ,所得晶体最大尺寸为2 6mm× 15mm。Nd3 掺杂Sr3 Ga2 Ge4O14 晶体的特征吸收峰波长为 80 6nm ,与Nd3 离子在YAG中的特征吸收峰相比 ,向短波方向发生了微小的偏离。这是Sr3 Ga2 Ge4O14 晶格中Ga3 和Ge4 的统计分布所致。Nd3 ∶SGG晶体的这些特性将有助于泵浦效率的提高和泵浦阈值的降低 ,因此Nd3 ∶SGG晶体有望成为一种新型的LD泵浦固体激光材料。  相似文献   

18.
本文使用铱坩埚感应加热Czochralski法成功地生长出了无色透明且尺寸达5 0mm× 6 0mm的Lu2 SiO5:Ce晶体。XRD结构分析表明 ,该晶体为单斜结构。在室温下分别以X射线和紫外光为激发源测量了该晶体的发射光谱 ,获得的发射波长分别为 4 0 3nm和 4 2 0nm ,光衰减时间为 4 1ns,光产额达 32 0 0 0p/MeV。发射光谱的双峰结构以及晶体的发光特性证明其发光源于Ce3 离子的 5d1→5F5/ 2 和 5d1→5F7/ 2 跃迁。  相似文献   

19.
本文使用铱坩埚感应加热Czochralski法成功地生长出了无色透明且尺寸达φ50mm×60mm 的Lu2SiO5:e晶体.XRD结构分析表明, 该晶体为单斜结构.在室温下分别以X射线和紫外光为激发源测量了该晶体的发射光谱,获得的发射波长分别为403nm和420nm,光衰减时间为41ns,光产额达32000p/MeV.发射光谱的双峰结构以及晶体的发光特性证明其发光源于Ce3+离子的5d1→5F5/2 和 5d1→5F7/2跃迁.  相似文献   

20.
我们在同成份铌酸锂晶体中掺入四价离子铪,生长了掺杂浓度分别为2、4、6mol;的掺铪铌酸锂系列晶体.掺铪浓度达到4mol;时,晶体的抗光损伤能力为5×105W/cm2,比同成份纯铌酸锂晶体提高了4个数量级.应用全息法测得掺4、6mol;铪的铌酸锂晶体最大折射率变化为8.7×10-6,与高掺镁(6.5mol;)铌酸锂晶体的类似.晶体的红外吸收谱和紫外-可见光吸收谱也显示,掺杂浓度为4mol;时具有明显的阈值特征.由此可以确定铪离子在铌酸锂晶体中的阈值浓度约为4mol;.  相似文献   

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