Chemical Segregation in Vertical Bridgman Growth of GaInSb Alloys

A set of experiments on the solidification of Ga _1-x In _x Sb alloys with a large variation of the sample diameter (from 1mm to 10mm), of the growth rate (from 0.7 to 7 μm/s) and of the concentration (from x=0.01 to x= 0.1) is described. The associated radial and longitudinal segregation of the In have been analysed by SIMS or electron microprobe. Numerical simulation of the experiments, taking into account thermal, hydrodynamic and chemical behaviour has been carried out with the help of FIDAP. It is shown from these numerical results that a plateau of concentration can be reached even if a convective loop is present close to the interface, provided that the convection does not extend into the bulk of the liquid. This is in full agreement with the experimental results obtained. Supporting this analysis, in some experiments, a defect in term of verticality of the crucible led to complex 3-D convection involving the whole liquid, and in that case no plateau was obtained. For the radial segregation ΔC_R, three regimes of transport are found, characterised by the convective level: - A diffusive one, with a low, constant, ΔC_R related to the interface curvature. - A quasi-diffusive one (weak convection) in which ΔC_R increases with convection. - A convective one in which it decreases. Measured radial segregations are in good agreement with predictions from the numerical simulations.     

Heat and Momentum Transfer Numerical Analysis in a Vertical Bridgman Growth System

In this work the momentum and heat transfer on a Bridgman system for the growth of GaSb has been studied. The main objective was to obtain some information about the role of the different processes like conduction, radiation and convective effects both in the melted material and the surrounding environment. These simulations are based on a 2D axi‐symmetrical model using a finite element method based code. The simulations have been carried out both in steady and transient states. It has been demonstrated that the consideration of a moving environment is important in the distribution of temperatures. The effects of the variations of thermal conductivities and emisivities on the thermal and velocity fields have been investigated. The results show that the key parameters are the thermal conductivities of the different materials present in the system, which produce significant changes in the convective flows inside the melt.     

Modelling of the Transport Processes in Bridgman grown Gallium Antimonide

In this work the thermal, velocity and species fields in the melt during the crystal growth by the vertical Bridgman method, has been studied. The simulations were focused on the special case of GaSb, which is a semiconductor of high technological importance. The simulations have been carried out both in 2 and 3‐D. In both cases the momentum (Navier‐Stockes), energy and mass transport equations were solved. The wall‐to‐wall radiation has also been included. In the two‐dimensional case an axisymmetric global model was developed taking into account the different elements present inside the real Bridgman growth system. In order to study the transport processes in the whole system during a complete growth process, the time dependence has also been considered. In the three‐dimensional case, the mathematical domain is restricted to the melt. These simulations were developed in order to study the influence of the ampoule tilting on the dopant distribution in the melt.     

碲锌镉垂直布里奇曼法晶体生长过程固液界面的演化

计算模拟了半导体材料碲锌镉垂直布里奇曼法单晶体生长过程,以等温线图展示了固液界面形状的演化,分析了温度梯度和坩埚移动速率对固液界面形状以及晶体内组分偏析的影响.计算结果表明在凝固的初始段,固液界面的凹陷深度较大,随后有较大幅度的减小.整个凝固过程中固液界面的凹陷深度值有一定的波动性.提高温度梯度、降低坩埚移动速率均能有效地减小固液界面的凹陷,改善晶体的径向组分偏析.     

垂直Bridgman法变速生长Hg1-xMnxTe晶体

在固液界面迁移理论和SODCM模型(二次反扩散补偿法)的基础上,本文提出采用垂直Bridgman法变速生长Hg1-xMnxTe晶体,并从理论和实验两方面对该方法的可行性进行了验证.与传统垂直Bridgman法的对比实验结果表明,该方法可以在提高轴向组分均匀性的前提下增大抽拉速度,进而提高晶体生长速度.     

Bridgman法晶体生长的瞬态数值模拟

采用变形有限元法对坩埚下降法晶体生长过程进行了瞬态数值模拟.对随下降距离生长位置、生长速度、界面位置处的法线方向温度梯度和凹度的变化进行了分析说明,将生长过程划分为三个阶段.结果表明在整个生长过程中,晶体生长条件一直处于变化之中,因而晶体的质量也在整块晶体中呈现一定的波动性.     

分离结晶垂直Bridgman法生长CdZnTe晶体的全局数值模拟

采用FLUENT软件对分离结晶Bridgman法生长CdZnTe晶体进行了全局数值模拟.模拟对象为:熔体上部边界条件分别为固壁和自由表面时两种晶体生长系统.重点考虑坩埚和晶体之间狭缝宽度e和重力对分离结晶过程的影响.在计算中分别取e=0 mm、0.5 mm和1 mm三种狭缝宽度,得到了在微重力和常重力条件下的温度分布、结晶界面形状以及流函数分布图.结果表明:在微重力条件下,当熔体上部为固壁时,随着狭缝宽度的增大,热毛细力作用增强,流动强度增强;当熔体上部为自由表面时,则与之相反.在常重力条件下,由于浮力-热毛细对流的共同作用,随着狭缝宽度的增加,流动强度逐渐减弱,有助于提高晶体生长质量.     

籽晶垂直布里奇曼法生长大尺寸CdZnTe单晶体

采用改进的垂直布里奇曼(MVB)法并引入籽晶生长技术,成功生长出直径60mm,单晶体积超过200cm3的CdZeTe(CZT)晶锭.根据CZT 晶片在近红外(NIR)波段的透过谱,由截止波长推算Zn组分在晶片中的平均含量,进一步的拟合得出晶体生长过程Zn沿晶锭轴向分凝因数约为1.30;分析了晶片在中红外波段内的红外透过率,发现波数在2000～4000cm-1内透过率平直且较高,超过60;,而从2000cm-1到500cm-1随波数的减小透过率急速下降至零;由钝化后的Au/CZT晶片的I-V曲线,计算得到生长态CZT晶片的电阻率ρ达到1.8×109～2.6×1010Ω·cm.     

碘化钾单晶的非真空密闭坩埚下降法生长

本文报道了KI单晶在非真空密闭条件下的坩埚下降法生长.以经充分干燥的高纯KI多晶为原料,将KI多晶料密封于套层铂坩埚中,添加少量活性碳粉末,可避免碘化物熔体的氧化与挥发,从而在非真空条件下实现KI单晶的坩埚下降法生长.在晶体生长过程中,炉体温度调节于750～770 ℃,固液界面温度梯度为30～40 ℃/cm,坩埚下降速率控制为1～2 mm/h,成功生长出尺寸为φ25 mm×50 mm的透明完整KI单晶.采用XRD、DTA-TG、透射光谱、荧光光谱对所获KI单晶进行了测试表征,结果表明该单晶具有良好的光学均匀性,在450～2500 nm波长范围的光学透过率达70;以上,其光学吸收边位于280 nm左右;在266 nm脉冲光激发下,该单晶具有397 nm峰值波长的荧光发射.     

Growth of BiSbTe3 -Mixed Crystals using a Bridgman Configuration of the TITUS Furnace - Numerical Simulation of Convection and Segregation

A standard Bridgman configuration of the TITUS facility was used to grow BiSbTe ₃ -mixed crystals at normal and at reduced gravity. The growth experiments in space, including a dynamical registration of the temperature distribution of the furnace, were performed during the MIR'97 mission. The transient temperature profiles have been analysed to get thermal boundary conditions for numerical simulations of convection and segregation with the FEM package FIDAP. The calculations have been done within the frame of a 3D model close to the real growth conditions. The aim of the paper is to discuss the resulting Buoyancy driven flow configuration in the melt and its influence on the radial and axial segregation depending on the gravity level.     

Vertical Bridgman Growth and Scintillation Properties of Doped Bi4Si3O12 Crystals

Pure BSO and Ce, Nd, Eu, Cr and Fe doped BSO crystals of high optical quality with 20x20x100mm³ have been grown by the vertical Bridgman method. After measuring their transmission spectra, light outputs, FWHM energy resolutions and excitation-emission spectra, we summarized and explained the laws of doped effects on the scintillation characteristics. we can expect that Eu may be the most promising dopant candidate of the doped elements for improving the scintillation characteristics of BSO crystal.     

LiNbO3晶体的坩埚下降法生长

通过选择合适的原料配比(Li2O 48.6mol;,Nb2O5 51.4mol;),控制固液界面处的温度梯度为20～40℃/cm,晶体生长速度为0.6～1.5mm/h,采用密闭条件下的坩埚下降法工艺成功地生长出了具有良好光学均匀性的完整LiNbO3单晶.用X射线粉末衍射表征获得的LiNbO3晶相,讨论了若干工艺条件对晶体组分与质量的影响.测定了未密闭条件下生长的LiNbO3晶体不同部位样品的紫外可见光谱,发现其吸收边沿生长方向发生红移,并讨论了产生此现象的原因.     

Shape evolution of detached Bridgman crystals grown in microgravity

Detached (or dewetted) Bridgman crystal growth defines that process in which a gap exists between a growing crystal and the crucible wall. In microgravity, the parameters that influence the existence of a stable gap are the growth angle of the solidifying crystal, the contact angle between the melt and the crucible wall, and the pressure difference across the meniscus. During actual crystal growth, the initial crystal radius will not have the precise value required for stable detached growth. Beginning with a crystal diameter that differs from stable conditions, numerical calculations are used to analyze the transient crystal growth process. Depending on the initial conditions and growth parameters, the crystal shape will either evolve towards attachment at the crucible wall, towards a stable gap width, or inwards towards eventual collapse of the meniscus. Dynamic growth stability is observed only when the sum of the growth and contact angles exceeds 180°.     

Bridgman法晶体生长的热物性各向同性坩埚的选择

本文对不同坩埚热物性组合时计算得到的结果进行了比较.对各向同性坩埚而言,应该优先选择具有与晶体和熔体的导热系数相当导热系数的材料,也可选择导热系数较大的材料.在强度允许的情况下,减小坩埚壁厚对晶体生长有利.     

Contribution to the stability analysis of the dewetted Bridgman growth under microgravity conditions

Experimental observations show that the gap between the sample and the crucible, commonly obtained after solidification in microgravity, is remarkably stable. With the aim to understand the reason of this stability, the dewetting phenomenon is studied by Lyapunov's method. After a short review of the existing mechanisms leading to dewetting, the open smooth crucible configuration is chosen as the most representative. The analytical stability analysis, taking into account geometrical and thermal effects, performed under some boundary heat transfer approximations, shows that, in most cases, the dewetting process is intrinsically stable. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

环境条件对Bridgman法晶体生长过程的影响

本文对不同环境条件时Bridgman法晶体生长过程进行计算,并对不同条件对生长过程的影响加以讨论.较大的温度梯度、较大的换热系数和适量的底部冷却是Bridgman法晶体生长的必备条件,也是工艺优化的重要方向.     

Comment on the paper “Contribution to the stability analysis of the dewetted Bridgman growth under microgravity conditions”

New considerations of the stability problem of dewetting, as addressed in the initial paper [Cryst. Res. Technol. 39 , 491 (2004)], show that, in the most general case, when dewetting occurs in microgravity it is necessarily stable. This explains why the phenomenon has been observed so many times during solidification of semiconductors in space. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Using a Phase‐field‐like Approach for the Calculation of Melt Flow and Interface Shape during Czochralski Growth

A phase‐field‐like approach is introduced into the commercial general‐purpose program FIDAP^TM to calculate the melt‐crystal interface for a quasi‐stationary approach of the Czochralski growth. Temperature and flow field are solved using the segregated solver of the FIDAP^TM software.