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1.
The electrical resistivity and Hall effect of indium sulfide single crystals are measured in the temperature range from 25 to 350 K. The donor energy levels located at 500, 40 and 10 meV below the conduction band are identified from both measurements. The data analysis of the temperature‐dependent Hall effect measurements revealed a carrier effective mass of 0.95 m0, a carrier compensation ratio of 0.9 and an acoustic deformation potential of 6 eV. The Hall mobility data are analyzed assuming the carrier scattering by acoustic and polar optical phonons, and ionized impurities. 相似文献
2.
To identify the impurity levels in CuIn5S8 single crystals, the dark electrical conductivity and photoconductivity measurements were carried out in the temperature range of 50–460 K. The data reflect the intrinsic and extrinsic nature of the crystals above and below 300 K, respectively. Energy band gaps of 1.35 and 1.31 eV at 0 K and 300 K, were defined from the dark conductivity measurements and the photocurrent spectra, respectively. The dark and photoconductivity data in the extrinsic temperature region reflect the existence of two independent donor energy levels located at 130 and 16 meV. The photocurrent‐illumination intensity dependence (F) follows the law IphαFγ, with γ being 1.0, 0.5 and 1.0 at low, moderate and high intensities indicating the domination of monomolecular, bimolecular and strong recombination at the surface, respectively. In the intrinsic region and in the temperature region where the shallow donor energy level 16 meV is dominant, the free electron life time, τn, is found to be constant with increasing F. In the temperature region 140 K < T < 210 K, the free electron life time increases with increasing illumination intensity showing the supralinear character. Below 140 K, τn decrease with decreasing illumination intensity. (© 2003 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim) 相似文献
3.
Systematic dark electrical resistivity and Hall mobility measurements have been carried out in the temperature range 150‐400 K on n‐type GaS0.5Se0.5 layered crystals. The analysis of temperature dependent electrical resistivity and carrier concentration reveals the extrinsic type of conduction with a donor impurity level located at 0.44 eV, donor and acceptor concentrations of 3.4 ×1017 and 4.1×1016 cm‐3, respectively, and an electron effective mass of 0.41 m0. The Hall mobility is limited by the electron‐phonon short‐range interactions scattering at high temperatures combined with the ionized impurity scattering at low temperatures. The electron‐phonon short‐range interactions scattering mobility analysis reveals an electron‐phonon coupling constant of 0.25 and conduction band deformation potential of 5.57 eV/Å. 相似文献
4.
E. Hernndez L. Durn C. A. Durante Rincn G. Aranguren C. Guerrero J. Naranjo 《Crystal Research and Technology》2002,37(11):1227-1233
From electrical resistivity measurements in the range from 240 to 450 K and from optical absorption measurements the energy gap value of CuIn5Se8 has been found to be 1.13 eV. Thermally stimulated current and electrical measurements at high temperature performed in indium annealed samples show deep levels at 0.55 and 0.79 eV, respectively. These defects are expected to be associated with interstitial indium or indium in copper site because of the In‐rich condition. 相似文献
5.
N. I. Leonyuk E. L. Belokoneva G. Bocelli L. Righi E. V. Shvanskii R. V. Henrykhson N. V. Kulman D. E. Kozhbakhteeva 《Crystal Research and Technology》1999,34(9):1175-1182
The laser crystals of chromium doped yttrium oxyorthosilicate (YSO) were grown from the melt by Czochralski technique. The crystals of YSO, yttrium pyrosilicate and stillwellite-like lanthanum borosilicate were obtained from high temperature solutions. Lithium and potassium di- and trimolybdates were used as fluxes in the growth experiments on silicate crystals. In the case of borosilicate crystals, the choice of fluxes was based on the potassium trimolybdate with an excess of potassium fluoride. The composition of grown crystals was studied by electron microprobe analysis, and structural characteristics were determined for all the single crystals. 相似文献
6.
M. Parlak . Ereleb . Günal H.
zkan N. M. Gasanly A. ulfaz 《Crystal Research and Technology》1997,32(3):395-400
X-ray powder diffraction data were obtained for Cu3In5Se9 and Cu3Te9, which were found to crystallize in orthorhombic and tetragonal systems, respectively. The electrical resistivities and Hall mobilities of these compounds were investigated in the temperature range 35–475 K. Cu3In5Se9, was identified to be n-type with a room temperature resistivity of 3 × 103 Ω·cm which decreases with increasing temperature. For T < 65 K impurity activation energy of 0.03 eV and for T > 350 K onset of intrinsic conduction yielding a band gap energy of 0.99eV were detected. The neutral impurity scattering was found to dominate at low temperatures, while in the high temperature region thermally activated mobility was observed. Cu3In5Te9 exhibits p-type conduction with a room temperature resistivity of 8.5 × 10−3 Ω·cm decreasing sharply above 400 K and yielding an impurity ionization energy of 0.13 eV. The temperature dependence of mobility indicates the presence of lattice and ionized impuritiy scattering mechanisms above and below 160 K, respectively. 相似文献