ZnSe—ZnTe应变层超晶格的纵光学声子模

本文首次利用室温非共振喇曼后向散射测得具有7.3％晶格失配的ZnSe-ZnTe应变层超晶格限制在ZnSe层中的纵光学声子模。计算了限制效应引起的声子模频率的红移,以及弹性应变引起的声子模的移动,它比前者大得多。ZnSe层所受拉伸应变引起声子频率红移,ZnTe层所受压缩应变引起声子频率蓝移。同时在喇曼光谱中观察到由于这种效应导致出现的纵光学声子折叠模。     

包裹在自组装Si/Ge点超晶格上的声学声子拉曼散射研究(英文)

pacc:7830Self-assembledSi/Gequantumdot(QD)structureshavebeenintensivelystudiedinthelast yearsforpotentialapplicationsinSibasedinte gratedoptoelectronics[1].Forthedemandof manytechnicalapplications,Gedotsuperlattices separatedbySicanbedepositedinordertoin …     

半导体超晶格界面声子的拉曼散射与对界面本质的认识

介绍了对半导体超晶格中宏观和微观两种界面声子研究的最新结果，深入讨论了这些新结果的物理意义，以及有待进一步研究的问题 。     

ZnSe—ZnTe应变层超晶格的光吸收研究

在室温下测量了Znse-ZnTe应变层超晶格的光吸收谱,观测到对应于第一轻重空穴跃迁的吸收台阶.根据测量所得的超晶格带隙确定了ZnSe-ZnTe的价带不连续为1.10eV.     

ZnS-ZnSe应变层超晶格的纵声学声子折叠模

本文报道室温下ZnS-ZnSe应变层超晶格的纵声学声子折叠模的喇曼光谱测量,在10～90cm~(-1)范围内得到三级双峰结构。     

ZnSe－ZnS应变超晶格光学振动模的研究

本文给出了ＣａＡｓ衬底上生长的ＺｎＳｅ－ＺｎＳ应变超晶格的室温Ｒａｍａｎ分析，观测了该超晶格中ＺｎＳｅ子层和ＺｎＳ子层的纵光学振动模（ＬＯ），首次发现在一些样品中ＺｎＳｅ子层的纵光学声子模ＬＯＺｎＳ出现红移，另一些样品中ＬＯＺｎＳｅ出现蓝移，而ＺｎＳ子层的ＬＯＺｎＳ总是向低波数方向移动，并利用限制效应和应变效应给出了解释。     

半导体超晶格声子激光器的研究进展

太赫兹频率的相干声子在纳米尺度器件的探测和操控领域具有重要的应用价值。半导体超晶格声子激光器是实现太赫兹频率相干声子源稳定输出的重要途径。本文首先回顾了GHz到THz频率范围声学放大的多种方法,然后详细阐述了超晶格声子放大、超晶格声学布拉格镜的工作原理与设计方法以及声子激光器的阈值条件,同时总结了电抽运和光抽运结构器件的研究现状,最后简要讨论了亚太赫兹声子激光器在声-电子领域的应用。分析表明,这种能够产生强相干太赫兹声子的半导体超晶格声子激光器在纳米尺度器件的探测与成像等方面具有广阔的发展前景。     

Dynamical Properties of Coherent Plasmons Coupled with LO Phonons in an InAs/GaAs Strained Superlattice

We have investigated the coherent plasmon photoexcited in the electron miniband of an InAs/GaAs strained superlattice (SL) using a reflection-type pump-probe technique. Under the condition that the center energy of the pump pulses is tuned to the fundamental transition energy of the SL, the coherent plasmon coupled with the longitudinal optical (LO) phonon of GaAs that is the barrier layer is observed. The time-domain signals of the coherent plasmon coupled with the GaAs-like LO phonon drastically change with varying the generation and detection energies. From the energy dependence of the time-domain signals, we discuss the relaxation process of the carriers photoexcited in the miniband of the SL.     

Phonons in Ge/Si quantum dot structures: influence of growth temperature

In this paper we present the results of a Raman study of Ge/Si quantum dot (QD) superlattices grown with different thicknesses of a Si interlayer and at different substrate temperatures. The built-in strain and atomic intermixing in the QDs are deduced from an analysis of optical phonon frequencies of the QDs obtained from Raman spectra of the structures.     

Symmetry-adapted tight-binding calculations of the totally symmetric A1 phonons of single-walled carbon nanotubes and their resonant Raman intensity

The atomistic calculations of the physical properties of perfect single-walled carbon nanotubes based on the use of the translational symmetry of the nanotubes face increasing computational difficulties for most of the presently synthesized nanotubes with up to a few thousand atoms in the unit cell. This difficulty can be circumvented by use of the helical symmetry of the nanotubes and a two-atom unit cell. We present the results of such symmetry-adapted tight-binding calculations of the totally symmetric A₁ phonons (the RBM and the G-band modes) and their resonant Raman intensity for several hundred nanotubes.In particular, we show that (1) the frequencies and the resonant Raman intensity of the RBM and the G-band modes show diameter and chirality dependence and family patterns, (2) the strong electron– phonon interactions in metallic nanotubes lead to Kohn anomalies at the zone center, (3) the G-band consists of a subband due to phonons of semiconducting tubes centered at 1593 cm⁻¹, a subband of phonons at 1570 cm⁻¹, and a subband of phonons of metallic tubes at 1540 cm⁻¹. The latter prediction confirms previous theoretical results but disagrees with the commonly adopted assignment of the G-band features.     

分子束外延ZnSe/GaAs材料的拉曼散射研究

用分子束外延(MBE)技术，在GaAa(100)衬底上生长了厚度从0．045μm到1．4μm的ZnSe薄膜。通过室温拉曼光谱的测量对ZnSe薄膜纵光学声子(Longitudinal-opticalphonon)的谱形进行了分析。用拉曼散射的空间相关模型定量分析了一级拉曼散射的型间相关长度与晶体质量之间的关系，结果表明ZnSe外延层的晶体质量随着外延层厚度的减薄是渐渐退化的，这是由于界面失配位错引入外延层所致，理论分析与实验结果相吻合。     

Raman spectroscopic studies of ZnSe/GaAs interfaces

ZnSe/semi‐insulating GaAs interfaces were studied by observing photogenerated plasmon–LO (PPL) coupled modes by nonresonant micro‐Raman spectroscopy. The effect of the carriers generated by the focused laser beam was investigated for a series of different thicknesses of ZnSe epitaxial layers. The PPL mode in GaAs was observed in the micro‐Raman spectra for all samples, but with different magnitude. The plasma is believed to be an electron gas as a result of the negative nature of the interfacial region that contains predominantly hole traps. The free carrier concentration is estimated to be > 10¹⁸ cm⁻³ and their lifetime ∼0.1 ns. This relatively long lifetime suggests that the ZnSe/GaAs interface has to be of high structural quality leading to a low recombination velocity. ZnSe/GaAs heterostructures of less crystalline quality (as determined by resonant Raman measurements) shows the effect of photogenerated carriers only to lesser extent. Copyright © 2007 John Wiley & Sons, Ltd.     

Magnetic Raman optical activity in FeF2

Raman optical activity (ROA) of magnons and phonons in antiferromagnetic FeF₂ (T_N=78 K) has been studied as a function of temperature and in applied magnetic field. For exciting light incident along the rutile-structure c-axis, ROA is observed for magnons but not phonons. In zero field, the small anisotropy-induced splitting (0.09 cm⁻¹) of the two acoustic-magnon branches is observed by light scattering for the first time. The splitting in applied magnetic field is found to reduce with increasing temperature in accordance with theory. No ROA was detected for two-magnon excitations.     

UHV/CVD硅锗膜的Raman光谱分析

本文提出一种用Raman光谱测量SiGe合金膜中的锗组分及应变的方法,方法是非破坏的。并用这一方法测量了几种不同锗组分和膜厚度的SiGe合金样品,它们都是用UHV／CVD设备生长的,其中两个样品还与X－射线双晶衍射的结果作了比较,两种方法的结果十分一致,这说明本文提出的方法是准确可靠的,这些样品用于制作SiGe/Si异质结PMOSFET,对0．5um 沟长器件,跨导达112ms.mm^-1。     

Structural, optical and Raman studies of template-free solvothermally synthesized ZnSe/ZnSe:Ce nanoparticles

The present work reports a general, single step and easy solvothermal method to synthesize well crystallized and pure phase Ce³⁺ doped ZnSe nanocrystals for the first time in a unified system. The products were well characterized by powder X-ray diffraction (XRD), UV-vis spectroscopy (UV-vis), photoluminescence spectroscopy (PL), transmission electron microscopy (TEM), high resolution transmission electron microscopy (HRTEM), energy dispersive X-ray diffraction (EDAX) and Raman spectroscopy. The products were found to show significant finite size effect as characterized by broadened XRD peaks, blue-shifts of the interband optical absorption edge and the asymmetric broadening of Raman spectra. The emission intensity of Ce³⁺ ion doped ZnSe was found to be considerably increased with respect to the pure one. The observed lineshape of LO modes indicates broadening that is due to the nanosized effect. The structure and properties were correlated and detailed growth mechanism is also discussed.     

Si/SiGe异质结构的硅盖层中应变对Raman谱特征的影响

应变Si/SiGe异质结构通过大剂量Ge离子注入并结合高温快速热退火制备而成。325 nm波长的紫外激光被用于调查应变Si盖层的Raman谱特征。实验发现,硅盖层中的张应变导致硅的520 cm-1的一级拉曼散射峰向低频方向偏移,峰的偏移程度反映硅盖层中横向张应力的大小约为12.5×108 N·m-2。硅盖层中的张应变并未导致1 555和2 330 cm-1的次级拉曼散射峰的变化。