Effect of the defectiveness of a semiconductor on the characteristics of Pd-GaAs contacts

A study was made of the volt-ampere characteristics of Pd-GaAs Schottky barriers in relation to the defectiveness of the gallium arsenide. The defect content of the material was checked metallographically and by the method of x-ray topography. Single crystals of GaAs doped with Ge, Ge + Sb, and Ge + In were studied. Here, the electron concentration was (1–4) · 10¹⁵ cm^–3, and mean dislocation density ranged from 4·10⁴ to 2·10² cm^–2. The defectiveness of the material was altered by the introduction of different concentrations of isovalent impurities. It was shown that for diodes produced by the same technology, the manifestation of low-temperature VAC anomalies and the current mechanism are determined by structural features of the semiconductor (by dislocations and microdefects).Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 7, pp. 90–95, July, 1988.     

Electrophysical properties and annealing of defects in nuclear transmutation-doped GaAs irradiated by H+ ions

A study has been made of the electrophysical characteristics of nuclear-transmutation-doped GaAs (NTDG) and GaAs doped with metallurgical impurities Sn, Te, Ge, and In, after irradiation by H⁺ ions at fluxes of up to 1.5·10¹⁶ cm^–2. It is shown that the changes in the GaAs produced by irradiation do not depend on the method used to dope the material and can be described on the basis of the known spectrum of E and H traps in GaAs. Crystals of GaAs annealed after irradiation display deep (P1–P3) traps, which are responsible for the high-temperature proton insulation GaAs.V. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 61–65, October, 1992.     

Effect of electron irradiation on the electrophysical properties and photoluminescence of nuclear-transmutation-doped gallium arsenide

The Hall effect, the electric conductivity, and the photoluminescence spectra of electron irradiated (E=1 MeV, D=1.1·10¹⁵–3.8·10¹⁸ cm^–2) nuclear-transmutation-doped n-GaAs crystals and crystals of n-GaAs doped by the standard metallurgical method were investigated. The energy spectrum of the radiation-induced defects, determined from the Hall effect and DLTS spectra [E1–E5 traps with ionization energy 0.08, 0.14, 0.31, 0.71, and 0.9 eV, respectively (from the bottom of the C band)], is the same in nuclear-transmutation-doped and standard GaAs and satisfactorily describes the experimental dependence n(D). The rate of introduction of traps E1, E2 decreases as n₀ increases (from 1.3 cm^–1 in GaAs with n₀ — 10¹⁷ cm^–3 to 0.7 cm^–1 in GaAs with n₀ 10¹⁸ cm^–3). The rate of removal of charge carriers () increases as n₀ increases, irrespective of the method of growth and doping of GaAs. The isovalent impurity In in nuclear-transmutation-doped gallium arsenide with N_In 10¹⁸ cm^–3 decreases .Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 45–51, April, 1991.     

Properties of epitaxial layers of p-type germanium-doped gallium arsenide

The electrophysical properties and cathode-luminescence(CL) spectra of p-type layers of GaAsGe with p=1.8·10¹⁷–3.6·10¹⁹ cm^–3 obtained by the method of liquid-phase expitaxy for a Ge content in the solution of 0.4–12 at. % were investigated. Regularities are set up for the change in the Hall constant, the Hall hole mobility, and the CL spectra as a function of the impurity concentration and temperature, which are explained from the viewpoint of an impurity zone mode. On the basis of the data obtained it is assumed that the material properties studied are determined by the impurity centers Ge_As and (Ge_Ga-V_Ga).Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 65–69, January, 1989.     

Carrier concentration in modulation-doped AlGaAs-GaAs heterostructures

Single-interface modulation-doped AlGaAs-GaAs heterostructures have very high mobilities if thick undoped spacers are introduced between the Si donors and the twodimensional electron gas. Electron densities are limited to values below 10¹² cm^–2. Higher channel densities are desirable for device applications and can be obtained by confining the electrons in quantum wells doped from both sides. Single quantum-well structures have been grown with sheet carrier densities exceeding 3×10¹² cm^–2 at 300 K and 77 K mobilities of 54,000 cm²/Vs. Single quantum wells doped from one side only with low electron concentrations of 2×10¹¹ cm^–2 have 4.2 K mobilities of 200,000cm²/Vs.     

Behavior of copper in gallium arsenide with high tin concentration

Investigations were made of the electrical properties, the cathodolumiescence and photoconductivity spectra, and the temperature dependence of the majority carrier lifetime in gallium arsenide with a high concentration of tin (n=2·10¹⁸ cm^–3, 1.5·10¹⁷ cm^–3) that was doped with copper under different diffusion regimes. Measurements of the Hall effect revealed centers with an ionization energy 0.175 ± 0.005 eV, their concentration depending on the rate of cooling of the samples. The cathodoluminescence and Hall effect data suggest that the cathodoluminescence band observed at 1.35 eV in GaAsSnCu is associated with radiative transitions of electrons to centers with _a =E_v + 0.175 eV. The hole lifetime in GaAsSnCu has a complicated temperature dependence which can be explained qualitatively by the presence of two types of capture center.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 58–63, September, 1980.     

Defect study on electron irradiated GaAs by means of positron annihilation

Measurements of the positron lifetime and Doppler-broadened annihilation-radiation have been performed in electron-irradiated GaAs. The positron lifetime at the irradiation induced defects was 0.250 ns at 300 K. The defect clustering stage was found to occur at around 520–620 K, and the coarsening and annealing stage is believed to be above 620 K. Similar annealing stages were also observed in GaAs lightly doped with Si (0.2×10¹⁸ cm^–3). Both the lifetime and the S-parameter in the irradiated GaAs were found to decrease with temperature from 300 K to 100 K, suggesting the coexistence of shallow traps in electron irradiated GaAs.     

The Hall effect in selectively doped strained-layer Ge-Ge1−xSix superlattices superlattices

For the first time, research on the unique galvanomagnetic properties of the hole gas in the channels of selectively doped CVD Ge-Ge_1−XSi_X (X≤0, 2) superlattices with strained Ge layers was carried out. We have obtained a high value of the hole mobility 1.5 × 10⁴ cm²/V s (T = 4, 2 K) at a hole concentrations of (1–5) × 10¹⁷ cm⁻³ in SLs channels. It is shown that the main contribution into the longitudinal conductivity of strained Ge-Ge_1−XSi_X SL due to light hole band splitting under the strains in Ge layers.     

EPR study of neutron irradiated Ge-S glasses

The results of EPR measurements on neutron irradiated Ge-S glasses doped by Mn are presented. It has been found that the integrated neutron flux from 1·1 × 10¹⁵ n. cm^–2 to 1·5× × 10¹⁷n. cm^–2 has no detectable effect on the nearest neighbour surroundings of Mn²⁺ probing ions but increases the intensity of all EPR lines. A new EPR line was detected in Mn-doped Ge-S glasses irradiated with the highest neutron dose of 1·5 × 10¹⁷ n. cm^–2.     

Electrophysical properties of heat-treated gallium arsenide

The electrical conductivity, Hall effect, ionization energy, and defect concentration of GaAs samples subjected to various forms of heat treatment were studied. The original material comprised single crystals grown by the Bridgman and Czochralski methods with electron concentrations of 2·10¹⁵–7·10¹⁷ cm^–3. The ionization energy and defect concentration were calculated with an electronic computer. The thermal conversion of GaAs was attributed to traces of copper, lattice defects, and residual impurities. The mobility varied in a complicated manner with the temperature of heat treatment in GaAs samples retaining their original n-type conductivity.Translated from Izvestiya VU Z, Fizika, No. 3, pp. 69–76, March, 1973.     

Investigation of the electrical and photoelectric properties of manganese-doped gallium arsenide as a material for photoresistive detectors

An investigation was made into the electrical and photoelectric properties of gallium arsenide with an initial electron density 5×10¹⁵–4×10¹⁷ cm^–3 doped with Mn in different thermodynamic diffusion regimes characterized by diffusion temperatures of 900 and 1000°C and arsenic vapor pressure 10^–2 and 10^–3 atm. The ionization energy and defect concentration were determined by a computer analysis of the equilibrium hole density determined from the Hall effect. Centers with ionization energy 0.08–0.10 eV were found, their concentration varying from 2×10¹⁹ to 2×10²⁰ cm^–3 depending on the diffusion temperature and the doping level of the original crystals. Data obtained by investigating the stationary intrinsic photoconductivity were used to determine a hole lifetime of t_p 10^–9 sec. The photoconductivity spectra were investigated in the range 0.5–2 eV at 77°K, and defects with ionization energy E_v + 0.6 eV were found in all samples. The impurity photoconductivity at wavelength 10.6 m was investigated. It was shown that GaAsMn can be used as a material for impurity photoresistors.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 15–19, March, 1981.     

Energy distributions and emission coefficients of secondary ions ejected from AIIIBV group semiconductors

The energy distributions of Ga⁺ and Ga₂ ⁺ secondary ions sputtered from the surface of single crystals of GaAs and GaP by Ar⁺ (E = 18 keV, j = 1·10^–6 A/cm²) ions were studied. Integral emission coefficients for secondary ions from four semiconductors (GaAs, GaP, InAs, and A1_0.35Ga_0.65As) bombarded by Ar⁺ ions (E = 2 keV, j₀ = 1·10^–6 A/cm²) were also measured. It is shown that the energy distribution of the Ga⁺ secondary ions are broad and qualitatively similar to distributions of secondary ions sputtered from metal oxide surfaces. Very high integral emission coefficients (up to 20–30%) for secondary ions are also observed, exceeding analogous coefficients for clean metal surfaces. These facts (the significant number of low energy secondary electrons and high secondary ion emission coefficients) are due to the lower density of free electrons in comparison with metals, which ensures a high degree of survival of sputtered ions, and the partially ionic character of the bonds in the semiconductors under study.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 88–92, November, 1990.     

Pressure studies of conduction-band N-pair-state mixing in dilute GaAs1−xNx alloys

High-pressure photoluminescence (PL) experiments (at 9 K) are reported for GaAs_1−xN_x/GaAs quantum wells having N compositions (x=0.0025, 0.004) in the dilute regime where the GaAs_1−xN_x alloy conduction band (CB) evolves rapidly by incorporation of N-pair states. Under increasing pressure, the PL spectra exhibit several new N-pair features that derive from CB-resonant states at 1 atm. Two of these features appear strongly at sub-band-gap energies for P29 kbar in the x=0.0025 sample, but are absent for all pressures in the x=0.004 sample. Several competing PL assignments due to bound-exciton recombination at NN_i pairs (i=1–4 is the anion separation) are considered in light of prior findings for N-doped (10¹⁷ cm⁻³) GaAs. The absence of certain PL features in the x=0.004 sample shows that N-pair states mix into the CB-continuum via a selective process, and this selectivity offers an important test for band-structure calculations in dilute GaAs_1−xN_x alloys.     

Photoluminescence and electric conductivity in germanium at low temperatures

We have studied the exciton and electron-hole droplet (EHD) luminescence in optically irradiated germanium at temperatures between 1.8 and 4.2 K in the presence of an electric field. Simultaneously the electric conductivity was measured. The sample material was high-purity Ge (N _A –N _D =7·10¹⁰ cm^–3) andp-doped Ge withN _A =3·10¹⁴ cm^–3. In the high-purity Ge samples the exciton and EHD-luminescence intensity decreased nearly linearly as a function of the applied electric current, whereas the dependence upon the electric field was more complicated. Our results could be explained by a model in which carrier annihilation at the contacts following a rapid drifting process plays a dominant role (drift model). In thep-doped Ge samples the current-dependence of the luminescence intensity was qualitatively similar. However, here the drift model is not strictly valid any more because of the reduced carrier mobility and the generation of additional carriers by impurity impact ionization. During variation of the electric field, the luminescence intensity and the electric current show hysteresis. Here the capture of the moving carriers by the EHD appears to play an important role, in addition to the EHD-nucleation process.     

Chemical characterization by XPS of Cu/Ge ohmic contacts to n-GaAs

Chemical composition of Cu/Ge layers deposited on a 1 μm thick n-type GaAs epitaxial layer (doped with Te to a concentration of 5 × 10¹⁸ cm⁻³) and its interface were examined ex situ by XPS combined with Ar⁺ sputtering. These measurements indicate a diffusion of Cu and Ge from the Cu/Ge layer towards GaAs and, also, an out-diffusion of Ga and As from the GaAs layer to the metallic films. The Auger parameter corrected Auger spectra and XPS spectra show only Cu and Ge metals in the in the Cu/Ge layer and in the interface.     

An IR-Radiometer with Internal Signal Modulation

An infrared (IR) radiometer electrical circuit on the basis of photoresistors and photodiodes made of silicon doped with zinc (Si) as well as the narrow bandgap semiconductor alloy Pb_0.78Sn_0.22Te is presented. In the circuit suggested a bridge with the photoreceiver connected to the radiometer input and immediately fed by signal generators functions as a radiation modulator. The threshold sensitivity turned out on a recorder is 2·10^–13 W·Hz^–1/2 (for the n⁺–n–n⁺ structures made of Si, =0.8–l.2m, T=300K); 1.4·10^–15W·Hz^–1/2 (for p⁺–n–n⁺ S-diodes on the basis of Si, =0.8–1.2m, T=300K) and 10^–12W·Hz^1/2 (for photodiodes on the basis of Pb_0.78Sn_0.22Te, =8–13m, T=77K).     

Search for cold nuclear fusion in palladium-deuteride

We searched for protons generated in cold D fusion reactions in Pd cathodes doped electrolytically with D. The applied experimental technique allowed the detection of proton production rates exceeding 0.074 s^–1 per cm³ cathode material (or 3.1·10^–24 s^–1 per D pair). Our results do not confirm fusion rates such like those recently reported.     

Determination of the strain potential constant by means of the p-InSb photoconductivity spectra under uniaxial compression

The influence of uniaxial pressure (0 < P < 2600 kg/cm2) on the intrinsic photoconductivity (PC) spectrum of p-InSb at 93 and 15°K is investigated. At 77°K the carrier concentration and mobility in the specimens were, respectively, (1.4–3.2)·10¹⁴ cm^–3 and 7000 cm²/V. sec. It is established that the maximum in the PC(E_m) spectra under compression is shifted towards higher energies. In the low-compression range E_m/P=5·10^–6eV·cm²/kg, while E_m/P=1·10^–6eV·cm²/kg for P > 1000 kg/cm². It is shown that the shift of the maximum of the intrinsic PC spectra with pressure is due to the growC;th in the forbidden bandwidth (E_g), and the change in parameters characterizing carrier diffusion in the specimen bulk (the diffusion coefficient, lifetime, surface recombination velocity) plays no part. The change in E_m/P with pressure is explained by the influence of valence band splitting. The deformation potential constants of the valence band |b|=(1.7±0.3) eV and |d|=(4.4±0.8)eV are calculated on the basis of a comparison between experimentally obtained data and theoretical results.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 159–162, February, 1976.     

Electrical properties of GaAs layers irradiated by H4 ions

The quantities(D) and(T) are studied in n- and p-GaAs, irradiated at T = 300°K by H⁺ ions (5 MeV). It is shown that the resistance of lightly doped GaAs specimens increases from original values of ₀ to 10⁹ ·cm upon irradiation by H⁺ ions (5 MeV) to integral fluxes up to D^* – 10¹⁵ H⁺/cm². For D > D^* the layer resistance decreases from 10⁹ ·cm to 1 ·cm at 300°K. It was found that all the GaAs specimens intensely irradiated by H⁺ ions had p-type conductivity near 300°K. Isochronic annealing of radiation defects was studied in the temperature interval 20–700°C.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 1, pp. 39–43, January, 1982.     

Spectral Properties of Single Crystals of Synthetic Diamond

The half-width of the spectrum of Raman scattering (RS) of the first order of a diamond single crystal grown in a nickel-free system containing nitrogen getters is identical to all growth sectors (1.69 ± 0.02 cm^–1). The sectorial inhomogeneity is not reflected in the transmission spectra and birefringence of this crystal. The nitrogen concentration is 4·10¹⁷ cm^–3. For different growth sectors of the diamond crystal grown in the Ni–Fe–C system, the half-width of the Raman line varies from 1.74 to 2.08 cm^–1, differences in the transmission spectra and birefringence are observed, and photoluminescence is revealed. The concentration of nitrogen in the growth sectors {001} is 1.6·10¹⁹ cm^–3, the content of nickel is estimated to be at a level of 10¹⁹ cm^–3, and the content of nitrogen in the {¯111} sectors is 4·10¹⁹ cm^–3.