Van Vleck paramagnetism of the thulium garnet Tm3Al5O12

The magnetic susceptibility of the garnet-type single crystal Tm₃Al₅O₁₂ exhibits the typical Van Vleck temperature independent paramagnetism below ≈8 K. The temperature dependence of the susceptibility over the range 2.0-300 K has been analyzed on the assumption that the cubic crystal-electric-field dominates the energy level on ³H₆ (J=6) ground multiplet for Tm³⁺ ion having 12-electrons in 4f shell. The ground state of the ³H₆ is nonmagnetic with Γ₂ singlet, avoiding the Kramers doublet. The energy separation between Γ₂ and the first excited state Γ⁽²⁾₅ triplet is evaluated to be 68.0 K. The whole energy interval Δ between Γ₂ and the highest state Γ₁ in ³H₆ is estimated to be 339.5 K.     

Spectroscopy of Ca3(BO3)2: Dy crystal

Dy³⁺: Ca₃(BO₃)₂ crystal was grown successfully by the Czochraski technique. The absorption spectrum was measured and its absorption peaks were assigned. The Judd-Ofelt intensity parameters were found to be Ω₂=5.216×10⁻²⁰, Ω₄=1.858×10⁻²⁰, Ω₆=0.623×10⁻²⁰ cm². The spectroscopic parameters of this crystal such as the oscillator strengths, radiative transition probabilities, radiative lifetime as well as the branching ratios were calculated. Also, room temperature luminescence decay curve in correspondence with the emission line ⁴F_9/2→⁶H_13/2 centered at 575 nm was measured.     

An experimental investigation of the photoconductivity spectrum of a monocrystal of AgInS2 grown by Bridgman and chemical transport techniques

The photoconductivity spectrum of a AgInS₂ single crystal grown both by chemical transport and by the Bridgman method has been studied at 300 K. Splitting of the valance band was clearly observed in both the chaleopyrite and pseudo-wurtzite structures. The observed splitting is in reasonable agreement with the values reported by the electroreflection technique.     

Growth and optical property of ZnWO4: Er crystal

Good quality crystals ZnWO₄ activated with Er³⁺ have been grown by means of Czochralski method and characterized using optical spectroscopy techniques. XRD, absorption spectra, fluorescence spectrum are presented and the Judd-Ofelt intensity parameters Ω₂, Ω₄, and Ω₆ are obtained to be 6.76×10^-20, 0.37×10^-20, and 0.50×10^-20 cm², respectively. Along crystallographic axes, refractive indices are presented. The fluorescence decay time of the ⁴I_13/2 level has also been investigated and shows an exponential behavior with a lifetime value of 5.52 ms. The crystal is potentially used for green and infrared eye-safe lasers.     

Impurity photoconductivity in epitaxial layers of gallium arsenide

Impurity photoconductivity spectra in the range 0.5–1.5 eV are studied in epitaxial layers of n-GaAs grown on substrates of semiconductive GaAs withρ > 10⁶ Ω·cm in the system Ga-AsCl₃ -H₂. The effect of uncontrolled acceptor impurities on the impurity photoconductivity spectrum is evaluated.     

Photoconductivity on europium oxyde single crystals and thin films

In this paper, results of photoconductivity measurements on four EuO samples are given. Low frequency photoconductivity versus temperature (10°K < T < 300°K) and magnetic field H is investigated for two wavelengths: 6600 Å and 9000 Å. The photoconductivity kinetic is also described, and is characterized by a distribution in decay times. Temperature, magnetic field and carrier concentration have small effects on this kinetic. Quenching effect is obtained by adding a continuous illumination (λ₂) to the weak modulated light (λ₁). The kinetic is strongly affected by quenching and becomes more simple. Quenching effect is maximum for the wavelength associated to the 4?⁷–4?⁶ 5d, transition. In contrast to the Penney-Kasuya[1] model we propose another one in which the conduction of equilibrium carriers as photo-excited carriers takes place in a broad band. The variation of low frequency photoconductivity versus temperature is attributed to the mobility variation. This variation agrees well with the model of mobility controlled by spin-disorder. The photoconductivity kinetic is interpreted by a three levels recombination model: the conduction band, the 4f levels and a distribution of trap levels. The lack of variation of photoconductivity decay in the range of metal-semiconductor transition is discussed.     

Optical spectroscopy, 1.5 μm emission and up-conversion properties of Er-doped Li3Ba2Gd3(MoO4)8 crystal

Er³⁺:Li₃Ba₂Gd₃(MoO₄)₈ crystal has been grown from a melt of Li₂MoO₄ by the top seeded solution growth method (TSSG). The polarized spectral properties of Er³⁺:Li₃Ba₂Gd₃(MoO₄)₈ crystal were investigated and the spectroscopic parameters were calculated and analyzed based on the Judd-Ofelt (J-O) theory. The emission cross-sections were calculated by the Fuchtbauer-Ladenburg (F-L) equation and the peak values of the emission band at 1535 nm were 9.7×10⁻²¹, 7.9×10⁻²¹ and 8.4×10⁻²¹ cm² for E∥b, E∥D1 and E∥D2, respectively. Under 977 nm excitation five up-conversion fluorescence bands around 490, 530, 550, 660 and 800 nm were observed, and the possible up-conversion mechanisms were proposed.     

Optical, thermal, dielectric and ferroelectric behaviour of sodium acid phthalate (SAP) single crystals

Sodium acid phthalate (SAP), an efficient semi-organic crystal having dimensions 17×8×2 mm³ has been grown from aqueous solution by slow evaporation technique at room temperature within the period of 2 weeks. The lattice parameters of the grown crystals were determined using single-crystal X-ray diffraction analysis. The presence of functional groups was estimated qualitatively by Fourier transform infrared (FTIR) analysis. The band gap energy was determined using optical absorption studies. The TG/DTA analysis reveals that the SAP crystal is thermally stable up to 141.6 °C. The dielectric constant and dielectric loss was studied as a function of frequency and the corresponding activation energy (E_a) has been calculated for the grown crystal. Scanning electron microscope studies enunciate the ferroelectric domain patterns of the SAP crystal. Ferroelectric property of the grown crystal was confirmed by hysteresis loop studies.     

Growth of α-Al2O3:C crystal with highly sensitive optically stimulated luminescence

In this work, an α-Al₂O₃:C crystal was directly grown by the temperature gradient technique (TGT) using Al₂O₃ and graphite powders as the raw materials. The optical, optically stimulated luminescence (OSL) properties and dosimetric characteristics of as-grown crystal were investigated. As-grown α-Al₂O₃:C crystal shows strong absorption band at 205, 230 and 256 nm. Three-dimensional thermoluminescence (TL) emission spectrum of the crystal shows a single emission peak at ∼415 nm. The OSL decay curve can be fitted to two exponentials, the faster component and the slower component. The OSL response of the crystal shows a linear-sublinear-saturation characteristic. As-grown α-Al₂O₃:C crystal shows excellent linearity in the dose range from 5×10⁻⁶ to 50 Gy. For doses higher than the saturation dose (100 Gy), the OSL sensitivity decreases as the dose increases.     

EPR and optical absorption studies of V O ions in L-asparagine monohydrate

Electron paramagnetic resonance (EPR) studies of V O²⁺ ions in L-asparagine monohydrate single crystals are reported at room temperature. It is found that the V O²⁺ ion takes up an interstitial site. The angular variations of the EPR spectra in three mutually perpendicular planes are used to determine the principal g and A values and their direction cosines. The values of g and A parameters are: g_x=1.9011, g_y=2.1008, g_z=1.9891 and A_x=100, A_y=78, A_z=126 (×10⁻⁴) cm⁻¹. The optical absorption spectrum of V O²⁺ ions in L-asparagine monohydrate is also studied at room temperature. The band positions are calculated using the energy expressions and compared with the observed band positions to confirm the transitions. The best-fit values of the crystal field (Dq) and tetragonal (Ds and Dt) parameters are evaluated from the observed band positions.     

Growth and spectral properties of Nd:GdVO4 laser crystal

In this paper, the Czochralski growth, absorption spectra, and photoluminescence spectra of Nd:GdVO₄ crystals are studied. From its absorption spectra, Nd:GdVO₄ is found to exhibit an anisotropic optical absorption effect, and its effective Judd-Ofelt parameters are calculated: Ω₂=10.281×10⁻²⁰ cm², Ω₄=5.426×10⁻²⁰ cm² and Ω₆=9.943×10⁻²⁰ cm². By these parameters, the absorption oscillator strengths, emission oscillator strengths, transition probabilities, fluorescence branch ratios, energy lifetimes, and integrated emission cross-sections are also derived. The photoluminescence spectra of Nd:GdVO₄ crystal consist of a wide emission band of host and the characteristic emission bands of Nd³⁺. Based on the excitation spectrum, both the two evident peaks locating at 345 and 371 nm are ascribed to the characteristic excitation of Nd³⁺, and an energy transfer from the host to its doping Nd³⁺ ions is indicated.     

Pressure dependence study on the electron-phonon coupling of thulium hexachloroelpasolite

Raman spectra of Cs₂NaTmCl₆ have been recorded using a diamond anvil cell at ambient temperature. The vibrational energy of each of the Raman-active TmCl₆⁻³ moiety modes increases linearly with pressure. The integrated band areas of the ν₁(a_1g) and ν₂(e_g) modes are independent of applied pressure. However, the band area of the ν₅(t_2g) mode shows an anomalous behaviour, which has been qualitatively interpreted as due to electron-phonon coupling of the aΓ₅ electronic state with the Γ₁+ν₅(t_2g) vibronic state. This interaction between the coupled states is strongest between ca. 10 and 13 GPa at ambient temperature. The results serve to emphasize the specificity of the occurrence of strong electron-phonon coupling for particular transitions of a given rare earth ion.     

Spectroscopic properties of Tm -doped Ba3Gd2(BO3)4 crystal

crystal with the size up to Φ 13 mm×44 mm was grown successfully by the Czochralski technique and its optical properties were presented. The absorption cross-section and emission cross-section were presented. Also, the potential laser gain near 1.9 μm was investigated. In the framework of the Judd-Ofelt (J-O) theory, the intensity parameters were calculated to be: Ω₂=11.375×10⁻²⁰ cm², Ω₄=5.077×10⁻²⁰ cm² and Ω₆=6.524×10⁻²⁰ cm². The spectroscopic parameters of this crystal such as the oscillator strengths, radiative transition probabilities, radiative lifetime as well as the branching ratios were calculated, too. This crystal is promising as a tunable infrared laser crystal.     

Optical spectroscopy of Er:YSGG laser crystal

Er:YSGG single crystals with good optical quality were grown by Czochralski method. X-ray diffraction (XRD) measurements show that the crystal lattice parameters of the 30 at.% Er³⁺-doped YSGG crystal were a=b=c=12.4640±0.0065 Å, α=β=γ=90°. The doping concentration of Er³⁺ in YSGG was calculated. The absorption spectrum and photoluminescence spectra of Er:YSGG crystal were studied at room temperature. Based on Judd-Ofelt (J-O) theory, the J-O intensity parameters Ω_t (t=2, 4, 6), the experimental and theoretical oscillator strengths were calculated using the absorption spectrum. The intensity parameters Ω_t (t=2,4,6) obtained to be Ω₂=0.23×10⁻²⁰ cm², Ω₄=0.86×10⁻²⁰ cm², Ω₆=0.37×10⁻²⁰ cm², respectively. With these intensity parameters, the line strengths, oscillator strengths, transition probabilities, fluorescence branching ratios and radiation lifetimes were calculated. The photoluminescence spectra and excitation spectrum of Er:YSGG were measured and studied.     

Crystal structure and ferromagnetism of (n-C3H7)4N[CoFe(dto)3] (dto=C2O2S2)

Recently, we have discovered a new type of first order phase transition around 120 K for (n-C₃H₇)₄N[Fe^IIFe^III(dto)₃] (dto=C₂O₂S₂), where the charge transfer transition between Fe^II and Fe^III occurs reversibly. In order to elucidate the origin of this peculiar first order phase transition. Detailed information about the crystal structure is indispensable. We have synthesized the single crystal of (n-C₃H₇)₄N[Co^IIFe^III(dto)₃] whose crystal structure is isomorphous to that of (n-C₃H₇)₄N[Fe^IIFe^III(dto)₃], and determined its detailed crystal structure. Crystal data: space group P6₃, a=b=10.044(2) Å, c=15.960(6) Å, α=β=90°, γ=120°, Z=2 (C₁₈H₂₈NS₆O₆FeCo). In this complex, we found a ferromagnetic transition at T_c=3.5 K. Moreover, on the basis of the crystal data of (n-C₃H₇)₄N[Co^IIFe^III(dto)₃], we determined the crystal structure of (n-C₃H₇)₄N[Fe^IIFe^III(dto)₃] by simulation of powder X-ray diffraction results.     

Characterization of crystal lattice constant and dislocation density of crack-free GaN films grown on Si(1 1 1)

GaN have sphalerite structure (Cubic-GaN) and wurtzite structure (hexagonal GaN). We report the H-GaN epilayer with a LT-AlN buffer layer has been grown on Si(1 1 1) substrate by metal-organic chemical vapor deposition (MOCVD). According to the FWHM values of 0.166° and 14.01 cm⁻¹ of HDXRD curve and E₂ (high) phonon of Raman spectrum respectively, we found that the crystal quality is perfect. And based on the XRD spectrum, the crystal lattice constants of Si (a = 5.3354 ?) and H-GaN (a_epi = 3.214 ?, c_epi = 5.119 ?) have been calculated for researching the tetragonal distortion of the sample. These results indicate that the GaN epilayer is in tensile strain and Si substrate is in compressive strain which were good agreement with the analysis of Raman peaks shift. Comparing with typical values of screw-type (D_screw = 7 × 10⁸ cm⁻²) and edge-type (D_edge = 2.9 × 10⁹ cm⁻²) dislocation density, which is larger than that in GaN epilayers growth on SiC or sapphire substrates. But our finding is important for the understanding and application of nitride semiconductors.     

High-resolution FTIR measurement of the line parameters in the fundamental band of HI

The linestrengths and self-broadening coefficients are determined from high-resolution measurements for P(1)-P(10) and R(0)-R(15) lines in the fundamental vibration-rotation band of hydrogen iodide at different gas pressures in the range of 2-280 Torr. Dipole matrix elements are calculated from the linestrength data. New values of the Herman-Wallis coefficients obtained, C₁₀=0.1319, D₁₀=4.41×10^-3, are in a better agreement with theory than previously reported. A significant influence of the hyperfine splitting on the spectral line profiles is demonstrated.     

Electronic absorption spectra of the 5d3 hexafluororhenate(IV) ion

The Γ₈(⁴A_2g) →Γ₇(²T_2g), Γ₈(²T_2g) electronic transitions for the 5d³ hexafluororhenate(IV) ion have been observed at liquid hydrogen temperature in a single Cs₂GeF₆ crystal and in a mixed crystal where the ReF^?2₆ ion is doped in the cubic Cs₂GeF₆ lattice. The electronic transitions have been assigned with a crystal field model to give information about the parameters B, C, Dq, and spin-orbit coupling. The vibrational structure in the mixed crystal system may be assigned to the ungerade modes of the ReF^?2₆ moiety. Comparison of the mixed and pure crystal vibrational structure shows that the pure crystal vibrational structure can be interpreted on the basis of K ≠ 0 lattice effects and a small distortion in the pure crystal.