Optical functions of chalcopyrite CuGaxIn1-xSe2 alloys

We report pseudodielectric functions <ε> of the quaternary semiconductor alloys CuGa_xIn_1-xSe₂. Measurements were done in polycrystalline samples from 0.7 to 5.2 eV at room temperature by spectral ellipsometry. Accurate values of refractive indices n and extinction coefficients k representative of the bulk materials are obtained from the data. The structures observed in <ε> are analyzed by fitting the numerically differentiated spectra of d²<ε>(ω)/dω² to analytic line shapes. The obtained energies are related to given inter-band transitions by taking into account the electronic band structures of the ternary end-point compounds. Received: 20 December 2000 / Accepted: 30 May 2001 / Published online: 25 July 2001     

Electronic Structure and Optical Properties of Semiconducting Orthorhombic BaSi2

Full potential linearized augmented plane wave （FPLAPW） method calculations are carried out for semiconducting orthorhombic BaSi2. The optical properties and the origin of the different optical transitions are investigated. Our calculated band gap of 1.0918eV is indirect, which is in good agreement with the experimental result. The bonds between Ba and Si are considered to be electrovalent bond. The anlsotropy in the imaginary part ε2（w） and real part εl（w） of the optical dielectric tensor are analysed. The contributions of various transition peaks are explained from the imagnary part of the dielectric function.     

First-principles calculations of the electronic and optical properties of In6S7 compound

The electronic structure and the optical properties of In₆S₇ crystal are calculated by the first-principles full-potential linearized augmented plane wave method (FP-LAPW) using density functional theory (DFT) in its generalized gradient approximation (GGA). The calculated band structure shows that the In₆S₇ is a semiconductor with a direct band gap in good agreement with experimental studies. Furthermore, the dielectric tensor and the optical properties, such as absorption coefficient, refractive index, extinction coefficient, energy-loss spectrum and reflectivity, are derived and analyzed in the study.     

Electronic structure calculations of transparent conductor Cd3TeO6: Optical properties and the effect of In-substitution

The electronic structure of Cd₃TeO₆ has been studied in the terms of first-principles calculations based on the density functional theory in order to investigate their optical properties and In-substitution effects. It was found that the highly dispersed bottom of the conduction band formed from Cd-s orbitals is the origin of the high transparency and conductivity. Cd₃TeO₆ exhibited optical anisotropy in its main crystal axes, and the c-axis showed the most suitable crystal growth direction for obtaining a wide transparent region. A pronounced shift of the absorption edge was effectively observed by the In-substitution, reflecting the domination of the In-5s level in the conduction band near the Fermi level.     

Observation of new critical point in InxAl1−xAs alloy using spectroscopic ellipsometry

Using a spectroscopic ellipsometry, pseudodielectric functions 〈?〉 of In_xAl_1−xAs ternary alloy films (x = 0.43, 0.62, 0.75, and 1.00) from 0.74 to 6.48 eV were determined. Fast in-situ chemical etching to effectively remove surface overlayers using charge-coupled device detector and to avoid the reoxidation of the surface of films prior to the ellipsometric spectrum measurement was performed. At the high energy region, an additional critical point structure which is interpreted as the E′₁ transition from the band structure calculation of the linear augmented Slater-type orbital method was reported.     

Effect of deposition parameters on structural, optical and electrical properties of nanocrystalline ZnSe thin films

This paper presents the chemical bath deposition of zinc selenide (n-ZnSe) nanocrystalline thin films on non-conducting glass substrates, in an aqueous alkaline medium using sodium selenosulphate as Se²⁻ ion source. The X-ray diffraction studies show that the deposited ZnSe material is nanocrystalline with a mixture of hexagonal and cubic phase. The direct optical band gap ‘E_g’ for the as-deposited n-ZnSe films is found to be 3.5 eV. TEM studies show that the ZnSe nanocrystals (NCs) are spherical in shape. Formation of ZnSe has been confirmed with the help of infrared (IR) spectroscopy by observing bands corresponding to the multiphonon absorption. We demonstrate the effect of the deposition temperature and reactant concentration on the structural, optical and electrical properties of ZnSe films.     

First principles study of electronic and optical properties of zincblende InP

Electronic and optical properties of InP in zincblende crystal structure are studied using the full potential linearized augmented plane wave plus local orbitals (FP-LAPW+lo) program. The complex dielectric function and optical constants, such as optical absorption coefficient, reflectivity, refractive index and extinction coefficient, are calculated, which are in good agreement with the experimental results, better than those from the full potential linear muffin-tin orbital (FP-LMTO) method. We also have explained the origin of the spectral peaks on the basis of the electronic band structures.     

Growth and characterisation of high quality MBE grown InNx Sb1–x

The growth, structural and optical characterisation of dilute nitride alloys of InSb grown by plasma‐assisted molecular beam epitaxy is presented. The layers were characterised by high‐resolution X‐ray diffraction indicating high crystalline quality and nitrogen incorporations up to 0.68%. Fourier‐transform infrared absorption measurements reveal the position of the absorption edge to be a result of the competing effects of bandgap reduction (due to nitrogen incorporation and bandgap renormalisation) and Moss–Burstein band filling.

     

Electron-phonon interaction in tetrahedral semiconductors

Considerable progress has been made in recent years in the field of ab initio calculations of electronic band structures of semiconductors and insulators. The one-electron states (and the concomitant two-particle excitations) have been obtained without adjustable parameters, with a high degree of reliability. Also, more recently, the electron-hole excitation frequencies responsible for optical spectra have been calculated. These calculations, however, are performed with the constituent atoms fixed in their crystallographic positions and thus neglect the effects of the lattice vibrations (i.e. electron-phonon interaction) which can be rather large, even larger than the error bars assumed for ab initio calculations.Effects of electron-phonon interactions on the band structure can be experimentally investigated in detail by measuring the temperature dependence of energy gaps or critical points (van Hove singularities) of the optical excitation spectra. These studies have been complemented in recent years by observing the dependence of such spectra on isotopic mass whenever different stable isotopes of a given atom are available at affordable prices. In crystals composed of different atoms, the effect of the vibration of each separate atom can thus be investigated by isotopic substitution. Because of the zero-point vibrations, such effects are present even at zero temperature (T=0).In this paper, we discuss state-of-the-art calculations of the dielectric function spectra and compare them with experimental results, with emphasis on the differences introduced by the electron-phonon interaction. The temperature dependence of various optical parameters will be described by means of one or two (in a few cases three) Einstein oscillators, except at the lowest temperatures where the T⁴ law (contrary to the Varshni T² result) will be shown to apply. Increasing an isotopic mass increases the energy gaps, except in the case of monovalent Cu (e.g. CuCl) and possibly Ag (e.g. AgGaS₂). It will be shown that the gaps of tetrahedral materials containing an element of the first row of the periodic table (C,N,O) are strongly affected by the electron-phonon interaction. It will be conjectured that this effect is related to the superconductivity recently observed in heavily boron-doped carbon.     

p-type doping of GaInNAs quaternary alloys

Using the first-principles band-structure method, we investigate the p-type doping properties and band structural parameters of the random Ga1−xInxN1−yAsy quaternary alloys. We show that the MgGa substitution is a better choice than ZnGa to realize the p-type doping because of the lower transition energy level and lower formation energy. The natural valence band alignment of GaAs and GaInNAs alloys is also calculated, and we find that the valence band maximum becomes higher with the increasing In composition. Therefore, we can tailor the band offset as desired which is helpful to confine the electrons effectively in optoelectronic devices.     

Band parameters for cadmium and zinc chalcogenide compounds

Theoretical investigations of the electronic, optical and elastic properties of cadmium and zinc chalcogenides in the zinc-blende structure are performed using a pseudopotential formalism. Our results are in reasonable agreement with the available experimental data. Polynomial expressions are obtained for the electron effective mass and the static dielectric constant as a function of the fundamental energy band-gap. Relations of elastic constants ratio to the ionicity are also examined and discussed.     

The optical absorption edge of brookite TiO2

The optical absorption edge of brookite TiO₂ was measured at room temperature, using natural crystals. The measurements extend up to 3.54 eV in photon energy and 2000 cm⁻¹ in absorption coefficient. The observed absorption edge is broad and extends throughout the visible, quite different from the steep edges of rutile and anatase. No evidence of a direct gap is seen in the range measured. The spectral dependence of the absorption strongly suggests that the brookite form of TiO₂ is an indirect-gap semiconductor with a bandgap of about 1.9 eV.     

First-principles study of electronic structure, chemical bonding, and optical properties of cubic SrHfO3

Electronic structure and optical properties of SrHfO₃ are calculated using the full potential linearized augmented plane wave plus local orbitals method. The calculated equilibrium lattice is in reasonable agreement with the experimental data. From the density of states (DOS) as well as charge density studies, we find that the bonding between Sr and HfO₃ is mainly ionic and that HfO₃ entities bond covalently. The complex dielectric functions are calculated, which are in good agreement with the available experimental results. The effect of the spin-orbit coupling on the optical properties is also investigated and found to be quite small.     

Electronic structure calculations for BaSxSe1−x alloys

A series of first principles calculations have been carried out to study structural, electronic properties of BaS_xSe_1−x alloys. We have used the local density as well as the generalized gradient approximations for the exchange-correlation potential. The structural properties of these materials, in particular the composition dependence to the lattice constant and bulk modulus, are found to be linear. It is also found linear relationship between theoretical band gaps and 1/a² (where a is lattice constant).     

Oxidation temperature dependent optical properties of bismuth oxide thin films: Effect of vapour chopping and air exposure

The optical properties of vapour chopped and nonchopped bismuth oxide thin films of two thicknesses 1500 Å and 2000 Å have been studied. The films were prepared by thermal oxidation in air; of vacuum evaporated vapour chopped and nonchopped bismuth thin films. As revealed by XRD studies, multiphase and polycrystalline bismuth oxide thin films were obtained. The refractive index was found to increase with the thickness and exposure to air for 40 days. The vapour chopped films showed higher refractive index, band gap and lower grain size than those of nonchopped films. The films showed high transmittance in the visible spectrum. The ageing effect on the vapour chopped films was found low.     

Effect of In-Doping on Electronic Structure and Optical Properties of Sr2TiO4

The effect of In doping on the electronic structure and optical properties of Sr2 TiO4 is investigated by a firstprinciples calculation of plane wave ultrasoft pseudopotentials based on density functional theory. The calculated results reveal that corner-shared TiO6 octahedra dominate the main electronic properties of Sr2TiO4 and the covalency of the Ti-O（1） bond in the ab plane is stronger than that of the Ti-O（2） bond along the c-axis. After In doping, there is a little lattice expansion in Sr2In0.125 Ti0.875 O4 and the interaction between the Ti-O bond near the impurity In atom is weakened. The binding energies of Sr2TiO4 and Sr2In0.125Ti0.875O4 estimated from the electronic structure calculations indicate that the crystal structure of Sr2In0.125 Ti0.875 O4 is still stable after doping, but its stability is lower than that of undoped Sr2TiO4. Moreover, the valence bands （VBs） of the Sr2In0.125Ti0.875O4 system consist of O 2p and In 4d states, and the mixing of O 2p and In 4d states makes the top VBs shift significantly to high energies, resulting in visible light absorption. The adsorption of visible light is of practical importance for the application of St2 TiO4 as a photocatalyst.     

Effect of indium incorporation on the optical properties of spray pyrolyzed Cd0.22Zn0.78S thin films

In this study, effect of indium incorporation on the optical properties is investigated for the spray pyrolyzed onto glass substrates at 275°C substrate temperature undoped and indium doped Cd_0.22Zn_0.78S thin films. The average optical transmittance of all the films was over 77% in the wavelength range between 450 and 800 nm. The optical band gap energies of the thin films have been investigated by the measurement of the optical absorbance as a function of wavelength. The optical absorption studies reveal that the transitions are direct band gaps of 3.02 and 3.05 eV for undoped and doped indium Cd_0.22Zn_0.78S thin films, respectively. The Urbach tail parameter and optical constants such as refractive index, extinction coefficient, and dielectric constants were calculated for these films. The dispersion parameters such as single-oscillator energy and dispersive energy were discussed in terms oft he single-oscillator Wemple—DiDomenico model.     

Study of the order–disorder transition and martensitic transformation in a Cu–Al–Be alloy by EELS

Changes in 3d states occupancy associated with order–disorder transition and martensitic transformation in a Cu–Al–Be alloy was investigated by electron energy loss spectroscopy (EELS) in both high energy and low energy loss regions. From the high energy loss region, the Cu L_2,3 white-line intensities, which reflect the unoccupied density of states in 3d bands, was measured for three states of the alloy: disordered austenite, ordered austenite and martensite. It was found that the white-line intensity remains the same during order–disorder transition but appears slightly smaller in martensite, indicating that some electrons left Cu 3d bands or some hybridization took place during phase transformation. From the low energy loss region, the optical joint density of states (OJDS) was obtained by Kramers–Kronig analysis. As maxima observed in the OJDS spectra are assigned to interband transitions, these spectra can be used to probe changes in the electronic band structure. The analysis shows that during the martensitic transformation, the peaks positions and relative intensities in the OJDS spectra undergoes noticeable changes, which are associated with interband transitions.     

A spectroscopic ellipsometry study on the variation of the optical constants of tin-doped indium oxide thin films during crystallization

In this paper, the variation of the optical constants of tin-doped indium oxide thin films during thermal treatment was explored using spectroscopic ellipsometry based on appropriate analysis models combining a Drude absorption edge and Lorentz oscillators. It was found that the refractive indices and the extinction coefficients show different behaviors depending on depth, thermal treatment time and temperature. The optical constants varied more abruptly in the lower part of the films, which confirms the model that crystallization starts from the film-substrate interface. Hall measurement showed that the significant increase in the extinction coefficients in the near infrared range is due to the increased number of free electrons.     

Single-crystalline Zn2SnO4 hexangular microprisms: Fabrication, characterization and optical properties

Large-scale Zn₂SnO₄ hexangular microprisms were successfully synthesized through a simple thermal evaporation method by heating metal Zn and Sn powders under varying temperatures. The synthesized microprisms are single-crystalline, tens of micrometers in length. And their surfaces have many nano-scale skewed steps along the axial direction. Structurally, we supposed that the hexangular prism could be described as a row of inlaid octahedron of Zn₂SnO₄ crystals. A broad asymmetrical emission band was observed in the PL spectrum of these Zn₂SnO₄ microprisms, which was discussed in detail in the paper.