Adsorption of CO, CO2 and NO molecules on a BaTiO3 (0 0 1) surface

Since the development of Scanning Tunnelling Microscopy (STM) technique, considerable attention has been devoted to various molecules adsorbed on various surfaces. Also, a new concept emerged with molecules on surfaces considered as nano machines by themselves. In this context, a thorough knowledge of surfaces and adsorbed molecules at an atomic scale are thus particularly invaluable. The present work describes the first Density Functional Theory (DFT) study of adsorption of CO, CO₂ and NO molecules on a BaTiO₃ surface following a first preliminary calculation of O and O₂ adsorption on the same surface. In the previously considered work, we found that a (0 0 1) surface with BaO termination is more stable than the one with TiO₂-termination. Consequently, we extended our study to CO, CO₂ and NO molecules adsorbed on a (0 0 1) surface with BaO termination. The present calculation was performed on a (1 × 1) cell with one monolayer of adsorbed molecules. Especially, a series of cases implying CO molecules adsorbed in various geometrical configurations has been examined. The corresponding adsorption energy varies in the range of −0.17 to −0.10 eV. The adsorption energy of a CO₂ molecule directly located above an O surface atom (called O_s) is of the order of −0.18 eV. The O-C distance length is then 1.24 Å and the O-C-O and O-C-O_s angles are 134.0° and 113.0°, respectively. For NO adsorption, the most important induced structural changes are the followings: (i) the N-O bond is broken when a NO molecule is absorbed on a Ba-O_s bridge site. In that case, N and O atoms are located above an O and a Ba surface atom, respectively, whereas the O-Ba-O_s and N-O_s-Ba angles are 106.5° and 63.0°, respectively. The N-O distance is as large as 2.58 Å and the adsorption energy is as much as −2.28 eV. (ii) In the second stable position, the NO molecule has its N atom adsorbed above an O_s atom, the N-O axis being tilted toward the Ba atom. The N-O_s-Ba angle is then 41.1° while the adsorption energy is only −0.10 eV. At last, the local densities of states around C, O as well as N atoms of the considered adsorbed molecules have also been discussed.     

Shell model calculations of the adsorption and diffusion of K, Cl, and KCl on KCl(0 0 1)

Equilibrium adsorption positions and diffusion pathways of the ions K⁺ and Cl⁻ as well as of the molecule KCl on the terrace of the (0 0 1) surface of KCl were determined by shell model calculations allowing relaxations of the crystal lattice in the vicinity of the adsorbed species. For the ions each one adsorption position was found, in which the ions are located above the hollow site at the center of a slightly distorted square formed by two cations and two anions of the uppermost surface layer of the KCl crystal. Adsorption energies of −1.52 eV for K⁺ and −1.61 eV for Cl⁻ were calculated. Jumps of the ions occur from these positions to adjacent hollow positions in the ±[1 0 0] and ±[0 1 0] directions with a jump distance of a₀/2. The activation energies for the jumps result as 0.142 for K⁺ and 0.152 eV for Cl⁻ and the mean diffusion lengths as and . For the KCl molecule four distinct adsorption minima with energies between −0.932 and −0.825 eV were found. Because of the smaller lattice relaxation caused by the molecule the adsorption energies are considerably lower than for the single ions. In the position with the largest adsorption energy the ions of the admolecule are again placed above adjacent hollow sites. In two more adsorption positions only one ion is at the hollow site and the other one in a top position above an oppositely charged ion of the surface. In the fourth position with the smallest adsorption energy both ions are in top positions. Jumps between the different adsorption positions proceed by rotations of the molecule, in which one of its ions remains essentially attached to a local minimum position. The diffusion and desorption of a KCl molecule was studied by a Monte Carlo method, resulting in a mean diffusion length x_s (nm) = 0.39 exp[0.84 (eV)/2kT], which agrees rather well with an experimental value of . Values for the mean stay time as well as for the surface diffusion coefficient are derived.     

Chemical reactions of water molecules on Ru(0 0 0 1) induced by selective excitation of vibrational modes

Tunneling electrons in a scanning tunneling microscope were used to excite specific vibrational quantum states of adsorbed water and hydroxyl molecules on a Ru(0 0 0 1) surface. The excited molecules relaxed by transfer of energy to lower energy modes, resulting in diffusion, dissociation, desorption, and surface-tip transfer processes. Diffusion of H₂O molecules could be induced by excitation of the O-H stretch vibration mode at 445 meV. Isolated molecules required excitation of one single quantum while molecules bonded to a C atom required at least two quanta. Dissociation of single H₂O molecules into H and OH required electron energies of 1 eV or higher while dissociation of OH required at least 2 eV electrons. In contrast, water molecules forming part of a cluster could be dissociated with electron energies of 0.5 eV.     

SiO adsorption on a p(2 × 2) reconstructed Si(1 0 0) surface

We have investigated the adsorption mechanism of SiO molecule incident on a clean Si(1 0 0) p(2 × 2) reconstructed surface using density functional theory based methods. Stable adsorption geometries of SiO on Si surface, as well as their corresponding activation and adsorption energies are identified. We found that the SiO molecule is adsorbed on the Si(1 0 0) surface with almost no activation energy. An adsorption configuration where the SiO binds on the channel separating the dimer rows, forming a Si-O-Si bridge on the surface, is the energetically most favourable geometry found. A substantial red-shift in the calculated vibrational frequencies of the adsorbed SiO molecule in the bridging configurations is observed. Comparison of adsorption energies shows that SiO adsorption on a Si(1 0 0) surface is energetically less favourable than the comparable O₂ adsorption. However, the role of SiO in the growth of silicon sub-oxides during reactive magnetron plasma deposition is expected to be significant due to the relatively large amount of SiO molecules incident on the deposition surface and its considerable sticking probability. The stable adsorption geometries found here exhibit structural properties similar to the Si/SiO₂ interface and may be used for studying SiO_x growth.     

Phosphine and tertiarybutylphosphine adsorption on the indium-rich InP (0 0 1)-(2 × 4) surface

Phosphine and tertiarybutylphosphine adsorption on the indium-rich InP (0 0 1)-(2 × 4) surface at 25 °C have been studied by internal reflection infrared spectroscopy, X-ray photoelectron spectroscopy, and low energy electron diffraction. Both molecules form a dative bond to the empty dangling bonds on the In-P heterodimers and the second-layer In-In dimers and vibrate symmetrically at 2319 (2315) and 2285 (2281) cm⁻¹ and asymmetrically at 2339 (2339) and 2327 (2323) cm⁻¹. A fraction of these species dissociate into adsorbed PH₂ with the hydrogen and tertiarybutyl ligands transferring to nearby phosphorus sites. The calculated energy barriers for desorption (<11 kcal/mol) of these molecules is less than that for dissociation (>17 kcal/mol) and explains their low sticking probabilities at elevated temperatures under InP growth conditions.     

Coverage effects on phenol adsorption on Si(1 0 0)2 × 1 as: A first principle calculation

We investigated the adsorption of a 6-dimers Si(1 0 0)2 × 1 surface as a function of coverage and adsorption type (molecular/dissociative) by first principle calculations. In particular, we performed calculations on models with 2, 3, 4 and 6 phenol molecules, corresponding to coverage Θ = 0.34, 0.5, 0.67 and 1. We found that total adsorption energy, when at least one phenol is in a molecular state is lower than the sum of the corresponding singly adsorbed molecules. The dissociative adsorption of multiple molecules, both in parallel and switched configuration is most favoured for a coverage Θ = 0.34 (2.6 eV per adsorbed molecule). This values decreases to 2.0 eV and remains constant till the coverage 1 is reached.The energy barrier for the molecular-to-dissociated transition of a phenol molecule, in presence of another dissociatively adsorbed molecule is ∼0.008 eV and it is similar to the value in case of single adsorption. Possible hydrogen displacements were also considered.     

Adsorption states of NO on the Pt(1 1 1) step surface

Using infrared reflection absorption spectroscopy (IRAS) and scanning tunneling microscopy (STM), we investigated the adsorption states of NO on the Pt(9 9 7) step surface. At 90 K, we observe three N-O stretching modes at 1490 cm⁻¹, 1631 cm⁻¹ and 1700 cm⁻¹ at 0.2 ML. The 1490 cm⁻¹ and 1700 cm⁻¹ peaks are assigned to NO molecules at fcc-hollow and on-top sites of the terrace, respectively. The 1631 cm⁻¹ peak is assigned to the step NO species. In the present STM results, we observed that NO molecules were adsorbed at the bridge sites of the step as well as fcc-hollow and on-top sites of the terrace. To help with our assignments, density functional theory calculations were also performed. The calculated results indicate that a bridge site of the step is the most stable adsorption site for NO, and its stretching frequency is 1607 cm⁻¹. The interactions between NO species at different sites on Pt(9 9 7) are also discussed.     

Probing the properties of the (1 1 1) and (1 0 0) surfaces of LaB6 through infrared spectroscopy of adsorbed CO

The adsorption of carbon monoxide on the LaB₆(1 0 0) and LaB₆(1 1 1) surfaces was studied experimentally with the techniques of reflection absorption infrared spectroscopy and X-ray photoelectron spectroscopy. The interaction of CO with the two surfaces was also studied with density functional theory. Both surfaces adsorb CO molecularly at low temperatures but in markedly different forms. On the LaB₆(1 1 1) surface CO initially adsorbs at 90 K in a form that yields a CO stretching mode at 1502-1512 cm⁻¹. With gentle annealing to 120 K, the CO switches to a bonding environment characterized by multiple CO stretch values from 1980 to 2080 cm⁻¹, assigned to one, two, or three CO molecules terminally bonded to the B atoms of a triangular B₃ unit at the (1 1 1) surface. In contrast, on the LaB₆(1 0 0) surface only a single CO stretch is observed at 2094 cm⁻¹, which is assigned to an atop CO molecule bonded to a La atom. The maximum intensity of the CO stretch vibration on the (1 0 0) surface is higher than on the (1 1 1) surface by a factor of 5. This difference is related to the different orientations of the CO molecules on the two surfaces and to reduced screening of the CO dynamic dipole moment on the (1 0 0) surface, where the bonding occurs further from the surface plane. On LaB₆(1 0 0), XPS measurements indicate that CO dissociates on the surface at temperatures above 400 K.     

Structure of rutile TiO2 (1 1 0) in water and 1 molal Rb at pH 12: Inter-relationship among surface charge, interfacial hydration structure, and substrate structural displacements

The rutile (1 1 0)-aqueous solution interface structure was measured in deionized water (DIW) and 1 molal (m) RbCl + RbOH solution (pH 12) at 25 °C with the X-ray crystal truncation rod method. The rutile surface in both solutions consists of a stoichiometric (1 × 1) surface unit mesh with the surface terminated by bridging oxygen (BO) and terminal oxygen (TO) sites, with a mixture of water molecules and hydroxyl groups (OH⁻) occupying the TO sites. An additional hydration layer is observed above the TO site, with three distinct water adsorption sites each having well-defined vertical and lateral locations. Rb⁺ specifically adsorbs at the tetradentate site between the TO and BO sites, replacing one of the adsorbed water molecules at the interface. There is no further ordered water structure observed above the hydration layer. Structural displacements of atoms at the oxide surface are sensitive to the solution composition. Ti atom displacements from their bulk lattice positions, as large as 0.05 Å at the rutile (1 1 0)-DIW interface, decay in magnitude into the crystal with significant relaxations that are observable down to the fourth Ti-layer below the surface. A systematic outward shift was observed for Ti atom locations below the BO rows, while a systematic inward displacement was found for Ti atoms below the TO rows. The Ti displacements were mostly reduced in contact with the RbCl solution at pH 12, with no statistically significant relaxations in the fourth layer Ti atoms. The distance between the surface 5-fold Ti atoms and the oxygen atoms of the TO site is 2.13 ± 0.03 Å in DIW and 2.05 ± 0.03 Å in the Rb⁺ solution, suggesting molecular adsorption of water at the TO site to the rutile (1 1 0) surface in DIW, while at pH 12, adsorption at the TO site is primarily in the form of an adsorbed hydroxyl group.     

Search for adsorption potential energy minima of NO on Pt(9 9 7) at 11 K

We observed four kinds of adsorbed NO molecules on Pt(9 9 7) at 11 K using infrared reflection absorption spectroscopy (IRAS). The peaks at 1690, 1484 and 1615 cm⁻¹ are assigned to the N-O stretching modes of the on-top site and the hollow site on the terrace and the bridge site at the step, respectively. The 1385 cm⁻¹ peak is observed below ∼70 K. We assign the 1385 cm⁻¹ peak to the hollow site of the (1 1 1) microfacet at the step or the lower-terrace hollow site nearest to the step. By heating, site-to-site hopping to the more stable site occurs and the relative stability of four adsorption sites can be determined.     

Intracavity laser absorption spectroscopy of HDO between 12 145 and 13 160 cm

The high resolution absorption spectrum of monodeuterated water, HDO, has been recorded by Intracavity Laser Absorption Spectroscopy (ICLAS) in the 12 145-13 160 cm⁻¹ region. The achieved sensitivity (noise equivalent absorption on the order of α_min ∼ 10⁻⁹ cm⁻¹) allowed detecting transitions with line strengths as weak as 10⁻²⁷ cm/molecule which is about 50 times lower than the weakest line intensities previously detected in the considered region.The rovibrational assignment of the 1179 lines attributed to the HDO isotopologue was based on the results of the variational calculations of Schwenke and Partridge as well as the recent calculations based on a new HDO potential energy surface refined from the fitting to the available experimental data. The overall agreement between these new calculations and the observed spectrum is very good, the rms deviation of the differences between the calculated and observed energy values being 0.05 cm⁻¹. A set of 304 new experimental HDO energy levels was obtained. In particular, band origins for the (1 2 2), (2 0 2), and (3 1 1) vibrational states, at 12 568.190, 12 644.652, and 12 919.938 cm⁻¹, respectively, and their rotational sublevels are derived for the first time. A detailed HDO database of 1337 transitions was constructed and is provided as Supplementary Material.     

Monolayer adsorption of water on NaCl(1 0 0)

Density functional theory calculations have been applied to investigate the adsorption geometry of water overlayers on the NaCl(1 0 0) surface in the monolayer regime. Competition between H-H intermolecular repulsion and the attraction of the polar molecules to the surface ions results in the most stable structure having a 2 × 1 adsorption symmetry with an adsorption energy of 415 meV. Overlayers of 1 × 1 symmetry, as observed in experiment, have slightly lower adsorption energies. The layers are also unstable with respect to rotation of individual molecules. Multiple hydrogens/oxygens interacting with a single substrate ion can pull that ion out of the surface, although the examples considered are energetically very unfavourable. Overlayers of 1 × 1 symmetry with a coverage of one water molecule per NaCl do not have a high enough adsorption energy to wet the surface.     

DFT study of NH3 dissociation on Si(1 1 1)-7 × 7. The role of intermolecular interactions

The adsorption of NH₃ molecule on the Si(1 1 1)-7 × 7 surface modelled with a cluster has been studied using density functional theory (DFT). The results indicate the existence of a precursor state for the non-dissociative chemisorption. The active site for the molecular chemisorption is the adatom; while the NH₃ molecule adsorbs on the Si restatom via this preadsorbed state, the adsorption on the Si adatom is produced practically without an energy barrier. The ammonia adsorption on the adatom induces an electron transfer from the dangling bond of this atom to the dangling bond of the adjacent Si restatom, hindering this site for the adsorption of a second NH₃ incoming molecule. However, this second molecule links strongly by means of two H-bonds. The dissociative chemisorption process was studied considering one and two ammonia molecules. For the dissociation of a lonely NH₃ molecule an energy barrier of ∼0.3 eV was calculated, yielding NH₂ on the adatom and H on the restatom. When two molecules are adsorbed, the NH₃-NH₃ interaction yields the weakening of a N-H bond of the ammonia molecule adsorbed closer the Si surface. As a consequence, the dissociation barrier practically disappears. Thus, the presence of a second NH₃ molecule at the adatom-restatom pair of the Si(1 1 1)-7 × 7 surface makes the dissociative reaction self-assisted, the total adsorption process elapsing with a negligible activation barrier (less than 0.01 eV).     

Dissociation of water molecule at three-fold oxygen coordinated V site on the InVO4 (0 0 1) surface

Water molecule adsorption properties at the surface of InVO₄ have been investigated using an ab initio molecular dynamics approach. It was found that the water molecules were adsorbed dissociatively to the three-fold oxygen coordinated V sites on the (0 0 1) surface. The dissociative adsorption energy was estimated to be 0.8-0.9 eV per molecule. The equilibrium distance between V and O of the hydroxyl -OH was almost the same as the V-O distance of tetrahedra VO₄ in the InVO₄ bulk crystal (1.7-1.8 Å).     

Theoretical study of CO adsorption on the illuminated TiO2 (0 0 1) surface

A quantum modeling of the CO adsorption on illuminated anatase TiO₂ (0 0 1) is presented. The calculated adsorption energy and geometries of illuminated case are compared with the ground state case. The calculations were achieved by using DFT formalism and the BH and HLYP. Upon photoexcitation, an electron-hole pair is generated. Comparing of natural population in the ground state and the exited state, shows that an electron is trapped in a Ti⁴⁺ ion and a hole is localized in an oxygen ion. The photoelectron helps generation of a CO₂ molecule on the TiO₂ surface. As shown by optimization of these systems, the CO molecule adsorbed vertically on the TiO₂ (0 0 1) surface in the ground state case while the CO molecule made an angle of 134.3° to this surface at the excited state case. Based on the here used model the obtained adsorption energy was 0.36 eV which is in excellent agreement with the reported experimental value. In the present work the C-O stretch IR frequencies are calculated which are 1366.53 and 1423.16 cm⁻¹. These results are in good agreement with the earlier reported works for the surface carbonaceous compounds, and oxygenated carbon species.     

Intracavity Laser Absorption Spectroscopy of D2O between 12 850 and 13 380 cm

The high resolution absorption spectrum of dideuterated water, D₂O, has been recorded by Intracavity Laser Absorption Spectroscopy (ICLAS) in the 12 850-13 380 cm⁻¹ spectral region which is the higher energy region reported so far for this water isotopologue. Very high deuterium enrichment was necessary to minimize the HDO absorption lines overlapping the D₂O spectrum. The achieved sensitivity (noise equivalent absorption α_min ∼ 10⁻⁹ cm⁻¹) allowed detecting transitions with line strengths on the order of 5 × 10⁻²⁸ cm/molecule. The spectrum analysis, based on recent variational calculations has provided a set of 422 new rovibrational energy levels belonging to 11 vibrational states, including rotational sublevels for four new vibrational states and one level of the (0 9 1) highly excited bending state. The very weak (1 0 4)-(0 0 0) band at 13 263.902 cm⁻¹, which is the highest D₂¹⁶O band currently observed, could be assigned despite the fact that the HDO absorption in the region is stronger by three orders of magnitude. The list of 996 D₂¹⁶O transitions is provided as Supplementary Material.     

A Monte Carlo simulation study of H2 layers on NaCl(0 0 1)

Monte Carlo simulations show that, at one monolayer coverage, H₂ molecules adsorbed on a NaCl(0 0 1) surface occupy all Na⁺ sites and form a commensurate c(2 × 2) structure. If the Cl⁻ sites are occupied as well, a bi-layer p(2 × 1) structure forms. An examination of the H₂ molecules’ rotational motion shows the molecular axes are azimuthally delocalized and so both of the structures acquire (1 × 1) symmetry in accord with experimental observations. These calculations also show that helicoptering o-H₂ (J = 1, m = ±1) prefer to sit on top of Na⁺ sites, while cartwheeling o-H₂ (J = 1, m = 0) prefers to locate over Cl⁻ sites, in agreement with other work.     

XPS investigation of ion beam induced conversion of GaAs(0 0 1) surface into GaN overlayer

For the advance of GaN based optoelectronic devices, one of the major barriers has been the high defect density in GaN thin films, due to lattice parameter and thermal expansion incompatibility with conventional substrates. Of late, efforts are focused in fine tuning epitaxial growth and in search for a low temperature method of forming low defect GaN with zincblende structure, by a method compatible to the molecular beam epitaxy process. In principle, to grow zincblende GaN the substrate should have four-fold symmetry and thus zincblende GaN has been prepared on several substrates including Si, 3C-SiC, GaP, MgO, and on GaAs(0 0 1). The iso-structure and a common shared element make the epitaxial growth of GaN on GaAs(0 0 1) feasible and useful. In this study ion-induced conversion of GaAs(0 0 1) surface into GaN at room temperature is optimized. At the outset a Ga-rich surface is formed by Ar⁺ ion bombardment. Nitrogen ion bombardment of the Ga-rich GaAs surface is performed by using 2-4 keV energy and fluence ranging from 3 × 10¹³ ions/cm² to 1 × 10¹⁸ ions/cm². Formation of surface GaN is manifested as chemical shift. In situ core level and true secondary electron emission spectra by X-ray photoelectron spectroscopy are monitored to observe the chemical and electronic property changes. Using XPS line shape analysis by deconvolution into chemical state, we report that 3 keV N₂⁺ ions and 7.2 × 10¹⁷ ions/cm² are the optimal energy and fluence, respectively, for the nitridation of GaAs(0 0 1) surface at room temperature. The measurement of electron emission of the interface shows the dependence of work function to the chemical composition of the interface. Depth profile study by using Ar⁺ ion sputtering, shows that a stoichiometric GaN of 1 nm thickness forms on the surface. This, room temperature and molecular beam epitaxy compatible, method of forming GaN temperature can serve as an excellent template for growing low defect GaN epitaxial overlayers.     

The absorption spectrum of water between 13 540 and 14 070 cm: ICLAS detection of weak lines and a complete line list

The absorption spectrum of water vapor has been investigated by Intracavity Laser Absorption Spectroscopy (ICLAS) between 13 540 and 14 070 cm⁻¹. This spectrum is dominated by relatively strong transitions of the 4δ polyad of vibrational states. The achieved sensitivity - on the order of α_min ∼ 10⁻⁹ cm⁻¹ - has allowed one to newly measure 222 very weak transitions with intensities down to 5 × 10⁻²⁸ cm/molecule at 296 K. Fifty new or corrected H₂¹⁶O energy levels belonging to a total of 13 vibrational states could be determined from the rovibrational analysis based on variational calculations by Schwenke and Partridge. The previous investigations in the region by Fourier Transform Spectroscopy were critically evaluated and used to construct the best to date set of energy levels accessed by transitions in the considered region. All the rovibrational transitions reaching these upper energy levels and having intensities larger than 4.0 × 10⁻²⁸ cm/mol were calculated. In the resulting line list, the positions at the level of experimental accuracy were augmented with variational intensities leading to the most complete line list for water in normal isotopic abundance in the 13 500-14 100 cm⁻¹ region.