Determination of a (4 × 4) structure formed on a Cu(0 0 1) surface by adsorption of calcium

The adsorption of calcium (Ca) atoms on a Cu(0 0 1) surface has been studied by low-energy electron diffraction (LEED) at 130, 300 and 400 K. It is found that a (4 × 4) was the only LEED pattern appeared at 400 K while a quasi-hexagonal structure was formed in a wide range of submonolayer coverage at 130 K. At 300 K, the (4 × 4) LEED spots were broad and weak. The (4 × 4) structure formed at 400 K was determined by a tensor LEED I-V analysis. It is a new-type of surface alloys consisting of five substitutional Ca atoms, nine surface Cu atoms, and two atomic vacancies in the unit cell. In spite of a quite large size-difference between Ca (3.94 Å) and Cu (2.55 Å) atoms, all Ca atoms are located at the substitutional sites. Among surface alloys so far reported, the atomic size ratio between Cu and Ca in the (4 × 4), 1.54, is the largest. Optimized structural parameters reveal that large lateral displacements of surface Cu atoms, being enabled by the appearance of the vacancies, allow the formation of the (4 × 4) structure.     

Growth of (√3 × √3)-Ag and (1 1 1) oriented Ag islands on Ge/Si(1 1 1) surfaces

We have studied the growth of Ag on Ge/Si(1 1 1) substrates. The Ge/Si(1 1 1) substrates were prepared by depositing one monolayer (ML) of Ge on Si(1 1 1)-(7 × 7) surfaces. Following Ge deposition the reflection high energy electron diffraction (RHEED) pattern changed to a (1 × 1) pattern. Ge as well as Ag deposition was carried out at 550 °C. Ag deposition on Ge/Si(1 1 1) substrates up to 10 ML has shown a prominent (√3 × √3)-R30° RHEED pattern along with a streak structure from Ag(1 1 1) surface. Scanning electron microscopy (SEM) shows the formation of Ag islands along with a large fraction of open area, which presumably has the Ag-induced (√3 × √3)-R30° structure on the Ge/Si(1 1 1) surface. X-ray diffraction (XRD) experiments show the presence of only (1 1 1) peak of Ag indicating epitaxial growth of Ag on Ge/Si(1 1 1) surfaces. The possibility of growing a strain-tuned (tensile to compressive) Ag(1 1 1) layer on Ge/Si(1 1 1) substrates is discussed.     

A study of Ga layers on Si(1 0 0)-(2 × 1) by SR-PES: Influence of adsorbed water

Results for deposition and thermal annealing of gallium on the Si(1 0 0)-(2 × 1) surface achieved by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) are presented. In addition to deposition of Ga on a clean surface, the influence of water adsorption on the arrangement of gallium atoms was also studied. The results on Ga deposition at a higher temperature (490 °C) are consistent with a Ga ad-dimer model showing equivalent bond arrangement of all Ga atoms for coverages up to 0.5 ML. The deposition onto a surface with adsorbed water at room temperature led to a disordered gallium growth. In this case gallium atoms bind to silicon dimers already binding fragments of adsorbed water. A subsequent annealing of these layers leads to a surface structure similar to the Ga-(2 × 2), however, it is less ordered, probably due to the presence of silicon oxides formed from water fragments.     

Determining the structure of Ru(0 0 0 1) from low-energy electron diffraction of a single terrace

While a perfect hcp (0 0 0 1) surface has threefold symmetry, the diffraction patterns commonly obtained are sixfold symmetric. This apparent change in symmetry occurs because on a stepped surface, the atomic layers on adjacent terraces are rotated by 180°. Here we use a low-energy electron microscope to acquire the threefold diffraction pattern from a single hcp Ru terrace and measure the intensity vs. energy curves for several diffracted beams. By means of multiple scattering calculations fitted to the experimental data with a Pendry R-factor of 0.077, we find that the surface is contracted by 3.5(±0.9)% at 456 K.     

Ga-induced superstructures on the Si(1 1 1) 7 × 7 surface

Monolayer Ga adsorption on Si surfaces has been studied with the aim of forming p-delta doped nanostructures. Ga surface phases on Si can be nitrided by N₂⁺ ion bombardment to form GaN nanostructures with exotic electron confinement properties for novel optoelectronic devices. In this study, we report the adsorption of Ga in the submonolayer regime on 7 × 7 reconstructed Si(1 1 1) surface at room temperature, under controlled ultrahigh vacuum conditions. We use in-situ Auger electron spectroscopy, electron energy loss spectroscopy and low energy electron diffraction to monitor the growth and determine the properties. We observe that Ga grows in the Stranski-Krastanov growth mode, where islands begin to form on two flat monolayers. The variation in the dangling bond density is observed during the interface evolution by monitoring the Si (LVV) line shape. The Ga adsorbed system is subjected to thermal annealing and the residual thermal desorption studied. The difference in the adsorption kinetics and desorption dynamics on the surface morphology is explained in terms of strain relaxation routes and bonding configurations. Due to the presence of an energetic hierarchy of residence sites of adatoms, site we also plot a 2D phase diagram consisting of several surface phases. Our EELS results show that the electronic properties of the surface phases are unique to their respective structural arrangement.     

Perturbation of Ge(1 1 1) and Si(1 1 1)√3α-Sn surfaces by adsorption of dopants

We test the response of the √3 × √3α reconstructions formed by 1/3 monolayer of tin adatoms on silicon and germanium (1 1 1) surfaces upon doping with electrons or holes, using potassium or iodine as probes/perturbers of the initial electronic structures. From detailed synchrotron radiation photoelectron spectroscopy studies we show that doping with either electrons or holes plays a complimentary role on the Si and Ge surfaces and, especially, leads to complete conversion of the Sn 4d two-component spectra into single line shapes. We find that the low binding energy component of the Sn core level for both Si and Ge surfaces corresponds to Sn adatoms with higher electronic charge, than the Sn adatoms that contribute to the core level high binding energy signal. This could be analyzed as Sn adatoms with different valence state.     

Structural study of Si(1 1 1)-6 × 1-Ag surface using surface X-ray diffraction

The surface structure of Si(1 1 1)-6 × 1-Ag was investigated using surface X-ray diffraction techniques. By analyzing the CTR scattering intensities along 00 rod, the positions of the Ag and reconstructed Si atoms perpendicular to the surface were determined. The results agreed well with the HCC model proposed for a 3 × 1 structure induced by alkali-metals on a Si(1 1 1) substrate. The heights of the surface Ag and Si atoms did not move when the surface structure changed from Si(1 1 1)-√3 × √3-Ag to Si(1 1 1)-6 × 1-Ag by the desorption of the Ag atoms. From the GIXD measurement, the in-plane arrangement of the surface Ag atoms was determined. The results indicate that the Ag atoms move large distances at the phase transition between the 6 × 1 and 3 × 1 structures.     

Layer-resolved photoelectron diffraction from Si(0 0 1) and GaAs(0 0 1)

Photoelectron diffraction in the layer-resolved mode brings more detailed information about local atomic arrangement than is obtained in the standard mode. This is demonstrated in crystals with diamond and zinc-blende structures, both for unpolarized photon excitation as well as for circularly polarized excitation. The full angular distributions of photoemission intensities are evaluated for large atomic clusters representing ideally truncated surfaces of Si(0 0 1) and GaAs(0 0 1). Highly structured layer-resolved patterns enable a more detailed understanding of the standard mode outcomes. Photoelectron intensities from atomic layers placed at different depths under the crystal surface provide direct evidence about electron attenuation and its anisotropy in crystals.     

(2 × 1)-Na surface reconstruction induced by NaCl dissociation on Ag(1 1 0) during LEED analysis

This study first reports the initial growth stages of sodium chloride (NaCl) on Ag(1 1 0) at room temperature. NaCl grows in bi-layer mode along its [1 0 0] axis and gives rise to (4 × 1) and (1 × 2) reconstructed domains for coverages lower than two monolayers (ML), a minimal thickness inducing a bi-dimensional closed film. In addition, a 10 ML NaCl film has been examined by low energy electron diffraction (LEED). LEED analysis leads to the dissociation of the NaCl deposit in a few minutes. The NaCl dissociation implies Cl desorption from the surface and Na remaining on it. The residual Na is arranged in the form of a (2 × 1) surface reconstruction and is found to be strongly bounded to the Ag substrate. These findings have been established by using the X-ray photoelectron spectroscopy technique.     

Optical anisotropy of the In/Si(1 1 1)(4 × 1)/(8 × 2) nanowire array

Ab initio calculations of the reflectance anisotropy of Si(1 1 1)-In surfaces are presented. A very pronounced optical anisotropy around 2 eV is found that is related to In-chain states. The distortion of the indium chains characteristic for the (4 × 1) → (8 × 2) phase transition results in a splitting of the 2 eV peak, as observed experimentally. The splitting occurs irrespective wether the phase transition occurs according to the trimer or hexamer model.     

Epitaxial growth of Bi thin films on Ge(1 1 1)

We investigated Bi thin film growth on Ge(1 1 1) by using low-energy electron diffraction (LEED) and scanning tunneling microscopy (STM). In the submonolayer regime, adsorbed Bi atoms form patches of the (2×1) structure. However, the structure does not grow to a long-range order. Following the formation of a (1×1) monolayer (ML) film, two-dimensional (1 1 0)-orientated Bi islands grow. The film orientation changes from (1 1 0) to (1 1 1) at 6-10 ML. The (1 1 0)-oriented Bi film shows a six-domain LEED pattern with missing spots, associated with a glide-line symmetry. The hexagonal (1 1 1) film at 14 ML has a lattice constant 2% smaller than bulk Bi(1 1 1).     

The CuGaSe2(0 0 1) surface: A (4 × 1) reconstruction

We report on the formation of a stable (4 × 1) reconstruction of the chalcopyrite CuGaSe₂(0 0 1) surface. Using Ar⁺ ion-bombardment and annealing of epitaxial CuGaSe₂ films grown on GaAs(0 0 1) substrates it was possible to obtain flat, well-ordered surfaces showing a clear (4 × 1) reconstruction. The cleanliness and structure were analyzed in situ by AES and LEED. AES data suggest a slight Se-enrichment and Cu-depletion upon surface preparation. Our results demonstrate that (0 0 1) surfaces of the Cu-III-VI₂(0 0 1) material can show stable, unfacetted surfaces.     

Theoretical STM images of alkaline-earth metal adsorbed Si(1 1 1)3 × 2 surfaces

We have performed total-energy calculations to study theoretical scanning tunneling microscopy (STM) images of the Si(1 1 1)3 × 2 surfaces induced by the adsorption of alkaline-earth metals (AEMs). Previously, in a series of works on Ba/Si(1 1 1) system, we have found that the observed Si(1 1 1)3 × 1-Ba LEED phase indeed has a 3 × 2 periodicity with a Ba coverage of 1/6 ML and the HCC substrate structure. Based on results of the Ba case, we proposed that the HCC structure is also adopted for other AEM atoms, which was confirmed by our recent work. In this paper, we mainly report the STM simulations for different AEM systems to compare with existing experimental data. We discuss the difference in the detailed STM images for different AEM adsorbates. Especially, the difference in filled-state images between Mg and other AEM atoms is attributed to the strong Mg-Si interaction.     

Adsorption and reactivity of SO2 on Ir(1 1 1) and Rh(1 1 1)

The adsorption and reactivity of SO₂ on the Ir(1 1 1) and Rh(1 1 1) surfaces were studied by surface science techniques. X-ray photoelectron spectroscopy measurements showed that SO₂ was molecularly adsorbed on both the Ir(1 1 1) surface and the Rh(1 1 1) surface at 200 K. Adsorbed SO₂ on the Ir(1 1 1) surface disproportionated to atomic sulfur and SO₃ at 300 K, whereas adsorbed SO₂ on the Rh(1 1 1) surface dissociated to atomic sulfur and oxygen above 250 K. Only atomic sulfur was present on both surfaces above 500 K, but the formation process and structure of the adsorbed atomic sulfur on Ir(1 1 1) were different from those on Rh(1 1 1). On Ir(1 1 1), atomic sulfur reacted with surface oxygen and was completely removed from the surface, whereas on Rh(1 1 1), sulfur did not react with oxygen.     

Surface structures formed by individual adsorption and coadsorption of Mn and Bi on Cu(0 0 1), studied by LEED

We have studied the individual adsorption of Mn and Bi, and their coadsorption on Cu(0 0 1) by low-energy electron diffraction (LEED). For Mn, we have determined the c(2 × 2) structure formed at 300 K, whose structure had been determined by several methods. We reconfirmed by a tensor LEED analysis that it is a substitutional structure and that a previously reported large corrugation (0.30 Å) between substitutional Mn and remaining surface Cu atoms coincides perfectly with the present value. In the individual adsorption of Bi, we have found a c(4 × 2) structure, which is formed by cooling below ∼250 K a surface prepared by Bi deposition of ∼0.25 ML coverage at 300 K where streaky half-order LEED spots appear. The c(4 × 2) structure has been determined by the tensor LEED analysis at 130 K and it is a substitutional structure. In the coadsorption, we found a c(6 × 4) structure, which has been determined by the tensor LEED analysis. It is very similar to the previously determined structure of the c(6 × 4) formed by coadsorption of Mg and Bi, and embedded MnBi₄ clusters are arranged in the top Cu layer instead of MgBi₄. Large lateral displacements of Bi atoms in the c(6 × 4)-(Mn + Bi) suggest that the Mn atoms undergo the size-enhancement caused by their large magnetic moment.     

Substitutional adsorption geometry for Pb(1 1 1)-(√3 × √3)R30°-K

Intermixed structures for alkalis (larger than Li) on close-packed substrates have previously been observed only on Al(1 1 1). This study shows that K forms an ordered intermixed structure on Pb(1 1 1). The structures of clean Pb(1 1 1) and Pb(1 1 1)-(√3 × √3)R30°-K were studied using dynamical low-energy electron diffraction (LEED). The clean Pb(1 1 1) surface at 47 K was found to be a relaxed version of the bulk structure, in agreement with an earlier study of the same surface [Y.S. Li, F. Jona, P.M. Marcus, Phys. Rev. B 43 (1991) 6337]. At room temperature, adsorption of K on this surface results in a (√3 × √3)R30° structure, which was shown using dynamical LEED to consist of K atoms substituted in surface vacancies. The K-Pb bond length was found to be 3.62 ± 0.3 Å, with no significant change to the Pb interlayer spacings.     

Water monolayer and multilayer adsorption on Ni(1 1 1)

Water adsorbed on Ni(1 1 1) forms an ordered, hydrogen bonded ice structure with a (2√7 × 2√7)R19° unit cell. The 2√7 wetting structure forms as islands and persists up to saturation of the first layer. Adsorption of a fraction of a monolayer more water into a second layer destroys the 2√7 registry and creates a disordered ice film. Gas adsorption measurements indicate that the wetting layer is completely covered by a second layer of water before thicker multilayer ice forms. As the second layer is completed the film orders to form an incommensurate crystalline ice film with a hexagonal LEED pattern, oriented to the Ni close packed rows. This ordered, incommensurate structure persists as the ice multilayer grows thicker.     

Effects of electronic confinement and substrate on the low-temperature growth of Pb islands on Si(1 0 0)-2 × 1 surfaces

The growth of Pb films on the Si(1 0 0)-2 × 1 surface has been investigated at low temperature using scanning tunneling microscopy. Although the orientation of the substrate is (1 0 0), flat-top Pb islands with (1 1 1) surface can be observed. The island thickness is confined within four to nine atomic layers at low coverage. Among these islands, those with a thickness of six layers are most abundant. Quantum-well states in Pb(1 1 1) islands of different thickness are acquired by scanning tunneling spectroscopy. They are found to be identical to those taken on the Pb(1 1 1) islands grown on the Si(1 1 1)7 × 7 surface. Besides Pb(1 1 1) islands, two additional types of Pb islands are formed: rectangular flat-top Pb(1 0 0) islands and rectangular three-dimensional (3D) Pb islands, and both their orientations rotate by 90° from a terrace to the adjacent one. This phenomenon implies that the structures of Pb(1 0 0) and 3D islands are influenced by the Si(1 0 0)-2 × 1 substrate.     

Vibrational entropy-driven dealloying of Mo(1 0 0) and W(1 0 0) surface alloys

The formation and stability of Cu, Ag and Au-induced c(2 × 2) alloys at the Mo(1 0 0) and W(1 0 0) surfaces have been investigated with low-energy electron microscopy and diffraction. The ordered alloys transform to disordered overlayer structures at elevated temperature. Comparison of the transformation temperatures with energetics obtained from first principles calculations reveals the vibrational entropic contribution to the system free energy that defines alloy thermal stability. Effective Debye temperatures for metal adatoms are determined that exhibit the expected mass and bond strength dependence.     

Observation of a (√3 × √3)-R30° reconstruction on GaN(0 0 0 1) by RHEED and LEED

A new reconstruction of √3 × √3-R30° has been observed on a GaN film grown on a 6H-SiC (0 0 0 1)-√3 × √3 surface using RHEED and LEED experimental techniques. The experimental LEED PF shows that the GaN film is Ga-terminated hexagonal. The surface is a mixture of two structures with a single bilayer height difference between them. One is a √3 × √3-R30° reconstruction with Ga-adatoms occupying the T4 sites. Another is a Ga-terminated 1 × 1 with no extra Ga on top. The area ratio of the √3 × √3 part to the 1 × 1 part is slightly larger than 1. The first principle total energy calculations and Tensor-LEED I-V curves simulations further confirm this structure model.