Thermal Vibration and Twist Induced Semiconducting Behaviour in Short DNA Wires

We study the transport properties of electrons in a short homogeneous DNA molecule where thermal vibrations and twist fluctuations of the base molecules are considered. The nonlinear current-voltage curves can be derived by using the equivalent single-particle multichannel network. The voltage gap is sensitive to the strength of thermal vibrations and twist fluctuations of the base molecules. Our results are in good agreement with the recent finding of semiconducting behaviour in short poly（G）-poly（C） DNA oligomers. The present method can also be used to calculate the other molecular wires.     

Electron transport through asymmetric DNA molecules

We investigate quantum mechanical electron transport along the long axis of the DNA molecule using an effective tight-binding model. The overall contour plot of transmission, the current-voltage characteristics, and the differential conductance are examined for the variation of backbone onsite energy, the energy-dependent hopping strength, and the contact coupling between the leads and the DNA molecule. It is shown that as backbone asymmetry increases, the merging and collapse of the two mini-bands take place and an extra resonance peak in the transmission appears. In addition, we present the modulation of voltage threshold in the current-voltage curves and a double-peak structure in the differential conductance due to the disappearance of the merged mini-band. Finally, in the Coulomb blockade regime of asymmetric contact coupling, a distinct and under-unity resonance in the transmission appears due to the interference effects between the DNA molecular bands and the electronic structure of the leads at the DNA-lead interface.     

Full counting statistics of transport electrons through a two-level quantum dot with spin–orbit coupling

We study the full counting statistics of transport electrons through a semiconductor two-level quantum dot with Rashba spin–orbit (SO) coupling, which acts as a nonabelian gauge field and thus induces the electron transition between two levels along with the spin flip. By means of the quantum master equation approach, shot noise and skewness are obtained at finite temperature with two-body Coulomb interaction. We particularly demonstrate the crucial effect of SO coupling on the super-Poissonian fluctuation of transport electrons, in terms of which the SO coupling can be probed by the zero-frequency cumulants. While the charge currents are not sensitive to the SO coupling.     

Size-dependent single electron tunneling effect in Au nanoparticles

We investigated single electron tunneling (SET) behavior of dodecanethiol-coated Au nanoparticles of two different sizes (average sizes are 5 nm and 2 nm) using nanogap electrodes, which have a well-defined gap size, at various temperatures. The Coulomb staircases and the Coulomb gap near-zero bias voltage caused by the suppression of the tunneling electrons due to the Coulomb blockade effect were observed in the current-voltage (I-V) curves of both sizes of nanoparticles at a low temperature (10 K). At room temperature, the Coulomb gap was observed only in the I-V curve of the smaller nanoparticles. This result indicates that the charging energy of the smaller nanoparticles is enough to overcome the thermal energy at room temperature. This suggests that it is possible to operate the SET devices at room temperature using the smaller nanoparticles as a Coulomb island.     

Spin filters with Fano dots

We compute the zero bias conductance of electrons through a single ballistic channel weakly coupled to a side quantum dot with Coulomb interaction. In contrast to the standard setup which is designed to measure the transport through the dot, the channel conductance reveals Coulomb blockade dips rather then peaks due to the Fano-like backscattering. At zero temperature the Kondo effect leads to the formation of broad valleys of small conductance corresponding to an odd number of electrons on the dot. By applying a magnetic field in the dot region we find two dips corresponding to a total suppression in the conductance of spins up and down separated by an energy of the order of the Coulomb interaction. This provides a possibility of a perfect spin filter.Received: 6 November 2003, Published online: 2 April 2004PACS: 72.15.Qm Scattering mechanisms and Kondo effect - 73.23.Ad Ballistic transport - 72.25.-b Spin polarized transport     

Low-temperature transport properties of individual SnO2 nanowires

Stannic oxide (SnO₂) nanowires have been prepared by Chemical vapor deposition (CVD). The low-temperature transport properties of a single SnO₂ nanowire have been studied. It is found that the transport of the electrons in the nanowires is dominated by the Efros-Shklovskii variable-range hopping (ES-VRH) process due to the enhanced Coulomb interaction in this semiconducting nanowire. The temperature dependence of the resistance follows the relation lnR∼T^−1/2. On the I-V and dI/dV curves of the nanowire a Coulomb gap-like structure at low temperatures appears.     

Absolute negative conductivity and spontaneous current generation in semiconductor superlattices with hot electrons

We study transport through a semiconductor superlattice with an electric field parallel to and a magnetic field perpendicular to the growth axis. Using a semiclassical balance equation model with elastic and inelastic scattering, we find that (1) the current-voltage characteristic becomes multistable in a large magnetic field and (2) "hot" electrons display novel features in their current-voltage characteristics, including absolute negative conductivity and a spontaneous dc current at zero bias. We discuss experimental situations providing hot electrons to observe these effects.     

Electronic Transport in Single-Stranded DNA Molecule Related to Huntington’s Disease

We report a numerical analysis of the electronic transport in single chain DNA molecule consisting of 182 nucleotides. The DNA chains studied were extracted from a segment of the human chromosome 4p16.3, which were modified by expansion of CAG (cytosine-adenine-guanine) triplet repeats to mimics Huntington’s disease. The mutated DNA chains were connected between two platinum electrodes to analyze the relationship between charge propagation in the molecule and Huntington’s disease. The computations were performed within a tight-binding model, together with a transfer matrix technique, to investigate the current-voltage (I–V) of 23 types of DNA sequence and compare them with the distributions of the related CAG repeat numbers with the disease. All DNA sequences studied have a characteristic behavior of a semiconductor. In addition, the results showed a direct correlation between the current-voltage curves and the distributions of the CAG repeat numbers, suggesting possible applications in the development of DNA-based biosensors for molecular diagnostics.     

Room temperature two-terminal characteristics in silicon nanowires

Quantum effects in silicon nanowires due to one-dimensional carrier confinement were observed at room temperature. Electrical transport properties were measured on narrow thin-silicon-on-insulator wires that were defined by e-beam lithography and further narrowed and thinned down by oxidation to a final thickness of around 3 nm, and a width of 29 nm. The room temperature current-voltage characteristics of the resulting silicon nanowires are shown to exhibit a zero current state may be due to the occurrence of Coulomb blockade.     

Theoretical investigation of the O2 adsorption effect in the electron transport of single Fe-porphyrin molecule

The effect of O₂ adsorption on the electron transport behavior of Fe-porphyrin molecule is investigated by the first-principles computational approach. The current-voltage characteristics of Fe-porphyrin and O₂ adsorbed Fe-porphyrin between gold electrodes are calculated. We find that the conductance of the Fe-porphyrin decreases dramatically upon the adsorption of O₂, which suggests that this system has potential application as a molecular sensor or a switch. This switching-behavior is analyzed from the evolutions of the transmission spectra and the molecular projected self-consistent Hamiltonian states of the molecular systems.     

Charge transport transitions and scaling in disordered arrays of metallic dots

We examine the charge transport through disordered arrays of metallic dots using numerical simulations. We find power law scaling in the current-voltage curves for arrays containing no voids, while for void-filled arrays charge bottlenecks form and a single scaling is absent, in agreement with recent experiments. In the void-free case we also show that the scaling exponent depends on the effective dimensionality of the system. For increasing applied drives we find a transition from 2D disordered filamentary flow near threshold to a 1D smectic flow which can be identified experimentally using characteristics in the transport curves and conduction noise.     

Effects of Coulomb interactions on spin states in vertical semiconductor quantum dots

The effects of direct Coulomb and exchange interactions on spin states are studied for quantum dots contained in circular and rectangular mesas. For a circular mesa a spin-triplet favored by these interactions is observed at zero and nonzero magnetic fields. We tune and measure the relative strengths of these interactions as a function of the number of confined electrons. We find that electrons tend to have parallel spins when they occupy nearly degenerate single-particle states. We use a magnetic field to adjust the single-particle state degeneracy, and find that the spin-configurations in an arbitrary magnetic field are well explained in terms of two-electron singlet and triplet states. For a rectangular mesa we observe no signatures of the spin-triplet at zero magnetic field. Due to the anisotropy in the lateral confinement single-particle state degeneracy present in the circular mesa is lifted, and Coulomb interactions become weak. We evaluate the degree of the anisotropy by measuring the magnetic field dependence of the energy spectrum for the ground and excited states, and find that at zero magnetic field the spin-singlet is more significantly favored by the lifting of level degeneracy than by the reduction in the Coulomb interaction. We also find that the spin-triplet is recovered by adjusting the level degeneracy with magnetic field. Received: 14 April 2000 / Accepted: 17 April 2000 / Published online: 6 September 2000     

Dynamical behavior of electron transport in AlGaAs/GaAs double-barrier structures under a high-frequency radiation field

We investigate the time-dependent dynamical behavior of electron transport in AlGaAs/GaAs double-barrier structures under a high-frequency radiation field. The effects of the radiation field with different amplitude and frequency on the real-time and mean current-voltage curves are taken into account. We find that the amplitude and frequency of the radiation field affect the final stable state current-voltage (I-V) behaviors, which leads to the switching between different current states at a smaller bias than that of the absence of the radiation field, and both current hysteresis and resonant peaks are suppressed by the external radiation field. The high radiation field strength can make the resonant peak of current split and the hysteresis of current disappear. This effect provides the potential to use double-barrier structure as a THz photoelectric switch.     

Coulomb promotion of spin-dependent tunneling

We study transport of spin-polarized electrons through a magnetic single-electron transistor (SET) in the presence of an external magnetic field. Assuming the SET to have a nanometer size central island with a single-electron level we find that the interplay on the island between coherent spin-flip dynamics and Coulomb interactions can make the Coulomb correlations promote rather than suppress the current through the device. We find the criteria for this new phenomenon--Coulomb promotion of spin-dependent tunneling--to occur.     

Energy-transfer rate in a double-quantum-well system due to Coulomb coupling

We study the energy-transfer rate for electrons in a double-quantum-well structure, where the layers are coupled through screened Coulomb interactions. The energy-transfer rate between the layers (similar to the Coulomb drag effect in which the momentum-transfer rate is considered) is calculated as functions of electron densities, interlayer spacing, the temperature difference of the 2DEGs, and the electron drift velocity in the drive layer. We employ the full wave vector and frequency-dependent random-phase approximation at finite temperature to describe the effective interlayer Coulomb interaction. We find that the collective modes (plasmons) of the system play a dominant role in the energy-transfer rates.     

Inelastic tunnel transport of electrons through an anisotropic magnetic structure in an external magnetic field

Quantum transport of electrons through a magnetic impurity located in an external magnetic field and affected by a substrate is considered using the Keldysh diagram technique for the Fermi and Hubbard operators. It is shown that in a strongly nonequilibrium state induced by multiple reflections of electrons from the impurity, the current-voltage (I–V) characteristic of the system contains segments with a negative conductivity. This effect can be controlled by varying the anisotropy parameter of the impurity center as well as the parameters of coupling between the magnetic impurity and metal contacts. The application of the magnetic field is accompanied by an increase in the number of Coulomb steps in the I–V curve of the impurity. The effect of appreciable magnetoresistance appears in this case. We demonstrate the possibility of switching between magnetic impurity states with different total spin projection values in the regime of asymmetric coupling of this impurity with the contacts.     

Effect of Intersubband Coulomb Interaction on Hot-Electron Transport in Two-and One-Dimensional Electron Systems

We study the hot-electron transport properties of model GaAs-based quasi-two-dimensional(-quantum-well) and quasi-one-dimensional'(quantum wire) systems having two occupied subbands by using the Lei-Ting balance-equations for two types of carriers. Both the intersubband electron-phonon interaction and intersubband Coulomb interaction are taken into account. Our numerical results show that when the electron density is high enough, the intersubband Coulomb interaction is substantially strong in thermalizing the electrons between the different subbands. As a consequence, the one-type-of-carriers model (OTCM) is a good approximation for electron transport. However, in the cases of the lower electron densities, the intersubband Coulomb interaction is not strong enough to fire the electrons in differents-ubbands to share a common electron temperature and a more accurate two-types-of-carriers model (TTCM) must be used for analysis.     

The effect of coulomb correlations on the nonequilibrium charge redistribution tuned by the tunneling current

We demonstrate that the tunneling current flowing through a system with Coulomb correlations leads to a charge redistribution between the different localized states. A simple model consisting of two electron levels is analyzed by means of the Heisenberg equations of motion taking correlations of electron filling numbers in localized states into account exactly in all orders. We consider various relations between the Coulomb interaction and localized electron energies. Sudden jumps of the electron density at each level in a certain range of the applied bias are found. We find that for some parameter range, inverse occupation in the two-level system appears due to Coulomb correlations. It is also shown that Coulomb correlations lead to the appearance of negative tunneling conductivity at a certain relation between the values of tunneling rates from the two electron levels.     

Transport properties of a single-quantum dot Aharonov-Bohm interferometer

We consider a two-terminal Aharonov-Bohm (AB) interferometer with a quantum dot inserted in one path of the AB ring. We investigate the transport properties of this system in and out of the Kondo regime. We utilize perturbation theory to calculate the electron self-energy of the quantum dot with respect to the intradot Coulomb interaction. We show the expression of the Kondo temperature as a function of the AB phase together with its dependence on other characteristics such as the linewidth of the ring and the finite Coulomb interaction and the energy levels of the quantum dot. The current oscillates periodically as a function of the AB phase. The amplitude of the current oscillation decreases with increasing Coulomb interaction. For a given temperature, the electron transport through the AB interferometer can be selected to be in or out of the Kondo regime by changing the magnetic flux threading perpendicular to the AB ring of the system.     

Generalized Pearson distributions for charged particles interacting with an electric and/or a magnetic field

The linear Boltzmann equation for elastic and/or inelastic scattering is applied to derive the distribution function of a spatially homogeneous system of charged particles spreading in a host medium of two-level atoms and subjected to external electric and/or magnetic fields. We construct a Fokker-Planck approximation to the kinetic equations and derive the most general class of distributions for the given problem by discussing in detail some physically meaningful cases. The equivalence with the transport theory of electrons in a phonon background is also discussed.