Degradation of superconducting properties in MgB2 by Cu addition

The (MgB₂)_2−xCu_x (x=0-0.5) superconducting system was prepared by a solid-state reaction technique. Microstructural evolution and transport properties including resistivity versus temperature up to a magnetic field of 6 T, activation energy, thermoelectric power and Fermi energy, E_F, and the corresponding velocity, V_F, values of the samples prepared were also investigated. The XRD analysis showed a multiphase formation and no detectable solution of Cu in MgB₂. Two different impurity phases, MgCu₂ and CuB₂₄, have been identified and their peak intensity increased when the Cu concentration increased. The temperature dependence of the resistivity of the samples showed a metallic behavior down to T_c. But, for the Cu concentrations above 0.3 the superconducting phase transition completely disappeared. The magnetic field strongly affects the electrical properties. For x=0.0 samples, the transition is found to be sharp, ΔT∼1 K, but it becomes broader with increasing magnetic field and Cu concentration. The calculated values of carrier concentration, n, of the samples are showed a sharp decrease with increasing Cu content. For x=0.0 sample the n was calculated to be 12×10²¹ cm⁻³, but for the x=0.5 sample it decreased to 1.3×10²¹ cm⁻³. We found that the activation energy, U(B), decreased sharply with increasing magnetic field. According to thermoelectric power and Fermi energy, E_F, calculations the decrease of the carrier concentration by the additions of Cu into MgB₂ gives a decrease in E_F and this could be attributed to a shift of the Fermi level towards the top of the σ-hole band.     

MgB2 coated superconducting tapes with high critical current densities fabricated by hybrid physical-chemical vapor deposition

The MgB₂ coated superconducting tapes have been fabricated on textured Cu (0 0 1) and polycrystalline Hastelloy tapes using coated conductor technique, which has been developed for the second generation high temperature superconducting wires. The MgB₂/Cu tapes were fabricated over a wide temperature range of 460-520 °C by using hybrid physical-chemical vapor deposition (HPCVD) technique. The tapes exhibited the critical temperatures (T_c) ranging between 36 and 38 K with superconducting transition width (ΔT_c) of about 0.3-0.6 K. The highest critical current density (J_c) of 1.34 × 10⁵ A/cm² at 5 K under 3 T is obtained for the MgB₂/Cu tape grown at 460 °C. To further improve the flux pinning property of MgB₂ tapes, SiC is coated as an impurity layer on the Cu tape. In contrast to pure MgB₂/Cu tapes, the MgB₂ on SiC-coated Cu tapes exhibited opposite trend in the dependence of J_c with growth temperature. The improved flux pinning by the additional defects created by SiC-impurity layer along with the MgB₂ grain boundaries lead to strong improvement in J_c for the MgB₂/SiC/Cu tapes. The MgB₂/Hastelloy superconducting tapes fabricated at a temperature of 520 °C showed the critical temperatures ranging between 38.5 and 39.6 K. We obtained much higher J_c values over the wide field range for MgB₂/Hastelloy tapes than the previously reported data on other metallic substrates, such as Cu, SS, and Nb. The J_c values of J_c(20 K, 0 T) ∼5.8 × 10⁶ A/cm² and J_c(20 K, 1.5 T) ∼2.4 × 10⁵ A/cm² is obtained for the 2-μm-thick MgB₂/Hastelloy tape. This paper will review the merits of coated conductor approach along with the HPCVD technique to fabricate MgB₂ conductors with high T_c and J_c values which are useful for large scale applications.     

Dielectric and optical behaviors in relaxor ferroelectric Pb(In1/2Nb1/2)1−xTixO3 crystal

Dielectric permittivities (ε′,ε″) have been measured as functions of temperature (140-535 K) and frequency (500 Hz-2.0 MHz) in a (001)-cut Pb(In_1/2Nb_1/2)_0.7Ti_0.3O₃ (PINT30%) single crystal grown by the modified Bridgman method with Pb(Mg_1/3Nb_2/3)_0.71Ti_0.29O₃ (PMNT29%) seed crystal. A diffused phase transition was observed in the temperature region of ∼430-460 K with strong frequency dispersion. Above the Burns temperature T_B≅510 K, the dielectric permittivity was found to follow the Curie-Weiss behavior, ε′=C/(T−T_C), with parameters C=3.9×10⁵ and T_C=472 K. Below T_B≅510 K, polar nanoclusters are considered to appear and are responsible for the diffused dielectric anomaly. Optical transmission, refractive indices, and the Cauchy equations were obtained as a function of wavelength at room temperature. The unpoled crystal shows almost no birefringence, indicating that the average structural symmetry is optically isotropic. The crystal exhibits a broad transparency in the wavelength range of ∼0.4-6.0 μm.     

MgB2 coated conductors directly grown on flexible metallic Hastelloy tapes by hybrid physical–chemical vapor deposition

MgB₂ coated conductors (CCs), which can avoid the low packing density problem of powder-in-tube (PIT) processed wires, can be a realistic solution for practical engineering applications. Here we report on the superior superconducting properties of MgB₂ CCs grown directly on the flexible metallic Hastelloy tapes without any buffer layer at various deposition temperatures from 520 to 600 °C by using hybrid physical–chemical vapor deposition (HPCVD) technique. The superconducting transition temperatures (T_c) are in the range of 38.5–39.4 K, comparable to bulk samples and high quality thin films. Clear (101) and (002) reflection peaks of MgB₂ are observed in the X-ray diffraction patterns without any indication of chemical reaction between MgB₂ and Hastelloy tapes. From scanning electron microscopy, it was found that connection between MgB₂ grains and voids strongly depend on the growth temperature. A systematic increase in the flux pinning force density and thereby the critical current density with decreasing growth temperature was observed for the MgB₂ CCs. The critical current density (J_c) of J_c(5 K, 0 T) ～10⁷ A/cm² and J_c(5 K, 2.5 T) ～10⁵ A/cm² has been obtained for the sample fabricated at a low growth temperature of 520 °C. The enhanced J_c (H) behavior can be understood on the basis of the variation in the microstructure of MgB₂ CCs with growth temperature.     

Superconductivity and calorimetric studies of Pr1.85Ce0.15CuO4+δ under different annealing conditions

Polycrystalline samples of electron-doped Pr_1.85Ce_0.15CuO_4+δ have been prepared under different annealing conditions and investigated by means of X-ray-diffraction, oxygen content analysis, electrical resistivity, magnetic susceptibility and low temperature specific heat measurements. X-ray-diffraction patterns show that samples contain a single T′ phase. The superconducting transition temperatures T_cm taken with the onset of diamagnetism in magnetic-susceptibility measurements are 20 and 19.5 K for sample annealed in flowing Ar gas and in vacuum (∼10⁻³ torr), respectively. The data of the samples, which are annealed in flowing Ar gas, show clear evidence for an αT² term at zero magnetic field in superconducting electronic specific heat, and are consistent with d-wave superconductivity. However, this behavior is not observed in the other sample, which is annealed in vacuum. These results indicate that different heat treatments affect the oxygen content, homogeneity, superconducting transition temperature T_c, superconducting volume fraction, and the superconducting pairing symmetry of Pr_1.85Ce_0.15CuO_4+δ.     

Microstructural and superconducting properties of C6H6 added bulk MgB2 superconductor

The effect of aromatic hydrocarbon (benzene, C₆H₆) addition on lattice parameters, microstructure, critical temperature (T_c), critical current density (J_c) of bulk MgB₂ has been studied. In this work only 2 mol% C₆H₆ addition was found to be very effective in increasing the J_c values, while resulting in slight reduction of the T_c. J_c values of 2 mol% C₆H₆ added MgB₂ bulks reached to 1.83×10⁶ A/cm² at 15 K and 0 T. Microstructural analyses suggest that J_c enhancement is associated with the substitution of carbon with boron and which also results in the smaller MgB₂ grain size. The change in the lattice parameters or the lattice disorder is claimed as a cause of the slight reduction in the T_c by carbon addition. We note that our results show the advantages of C₆H₆ addition include homogeneous mixing of precursor powders, avoidance of expansive nanoadditives, production of highly reactive C, and significant enhancement in J_c of MgB₂, compared to un-doped samples.     

The epitaxial growth of BaSnO3 buffer layer on IBAD-MgO template and its effects on GdBa2Cu3O7−δ film: A preliminary study

We report a successful fabrication of c-axis oriented GdBa₂Cu₃O_7−δ (GdBCO) films on the BaSnO₃ (BSO) buffer layers on ion-beam assisted deposition (IBAD)-MgO template by pulsed-laser deposition (PLD). The (0 0 l) growth and in-plane textures of BSO buffer layers were found sensitive to the substrate temperature (T_s). With increasing the BSO layer thickness up to ∼165 nm, in-plane texture (Δ? ∼ 6.2°) of BSO layers was almost unaltered while completely c-axis oriented BSO layers were obtainable from samples with the thickness below ∼45 nm. On the BSO buffer layers showing in-plane texture of 6.2° and RMS surface roughness of ∼8.6 nm, GdBCO films were deposited at 780–800 °C. All GdBCO films exhibited Δ? values of 4.6–4.7°, T_c,zero of ∼91 K, and critical current density (J_c) over 1 MA/cm² at 77 K in a self-field. The highest J_c value of 1.82 MA/cm² (I_c of 51 A/cm-width) was achieved from the GdBCO film deposited at T_s of 790 °C. These results support that BSO can be a promising buffer layer on the IBAD-MgO template for obtaining high-J_c GdBCO coated conductors.     

Electronic and magnetic properties of layered LnFePO (Ln=La and Ce)

Effects of the replacement of La with Ce on the electronic and magnetic properties of a layered superconductor LaFePO (T_c=∼5 K) were studied. Polycrystalline samples of CeFePO, prepared by a solid-state reaction, showed metallic conduction down to 2 K without exhibiting superconducting transition, although the resistivity decreased largely at temperatures below 30 K. Further, they showed an apparent positive magnetoresistance (MR) below ∼2 K, superposed on a negative MR. Temperature dependence of magnetic susceptibility is decomposed to a temperature-sensitive Curie-Weiss component presumably due to the Ce³⁺ ions with a magnetic moment of 1.98μ_B and a less temperature-sensitive component attributable to itinerant electrons. The magnetic interaction between Ce³⁺ ions and itinerant electrons in CeFePO likely suppresses the superconducting transition observed in LaFePO.     

On the superconductivity in in situ synthesized MgB2 tapes

Single core stainless steel (SS) sheathed MgB₂ tapes have been made by the powder-in-tube (PIT) method using commercial Mg and B powders in two series, one with nominal composition and the other with excess Mg. The electrical resistivity and susceptibility measurements have been carried out to evaluate residual resistivity ratio (RRR), the coherence length ξ(0) and critical current density J_C(T) in these tapes. Detailed structural analysis of the core material has been carried out to correlate the superconducting properties with the crystallinity. In the optimized growth condition the MgB₂ tapes exhibited an estimated J_C of ∼1.4×10⁷ A/m² at 39.45 K in zero field and the zero temperature coherence length is found to be ∼68 Å. MgB₂ tapes fabricated from starting powders having nominal Mg-composition have been shown to exhibit higher J_C than those fabricated from excess magnesium composition of the starting powders. The strained lattice together with the presence of nanosized MgO inclusion having size smaller than the coherence length, are shown to be responsible for the observed higher J_C.     

High pressure behaviour of KHSO4 studied by electrical impedance spectroscopy

Measurements of the electrical conductivity were performed in KHSO₄ at pressures between 0.5 and 2.5 GPa and in the temperature range 120-350 °C by the use of the impedance spectroscopy. The temperatures of the α-β phase transition (T_Tr) and of the melting (T_m), determined from the Arrhenius plots ln(σT) vs. 1/T, increase with pressure up to 1.5 GPa having dT/dP∼+45 K/GPa. Above the pressure 1.5 GPa, the pressure dependencies of T_Tr and T_m are negative dT/dP∼−45 K/GPa. At pressures above 0.5 GPa, the reversible decomposition of KHSO₄ into K₃H(SO₄)₂+H₂SO₄ (and probably into K₅H₃(SO₄)₄+H₂SO₄) affects the electrical conductivity of KHSO₄, with the typical values of the protonic electrical conductivity, c. 10⁻¹ S/cm at 2.5 GPa.     

Effect of annealing on the magnetic and superconducting properties of single-crystalline UCoGe

Single-crystals of the new ferromagnetic superconductor UCoGe have been grown. The quality of as-grown samples can be significantly improved by a heat-treatment procedure, which increases the residual resistance ratio (RRR) from ∼5 to ∼30. Magnetization M(T) and resistivity ρ(T) measurements show the annealed samples have a sharp ferromagnetic transition with a Curie temperature T_C is 2.8 K. The ordered moment of 0.06 μ_B is directed along the orthorhombic c-axis. Superconductivity is found below a resistive transition temperature T_s=0.65 K.     

Crystallization studies on AgI-Ag2O-MoO3 superionic system synthesized by melt quenching and mechanical milling

Crystallization in the melt-quenched (MQ) and mechanically milled (MM) superionic systems has been thoroughly investigated using differential scanning calorimetry, X-ray diffraction and electrical conductivity measurements. It is observed that the two systems obey different crystallization processes. The conventionally melt-quenched samples exhibit only one crystallization peak near 112 °C, whereas, the mechanochemically synthesized samples show two well-separated crystallization peaks at T_cl∼75-97 °C and T_c2∼132±2 °C. The higher value of electrical conductivity in the mechanochemically synthesized samples (∼10⁻² Ω⁻¹ cm⁻¹ at 300 K) than the melt-quenched samples is attributed to the higher value of disorder (entropy) in the former.     

EDXRF measurements on gold diffusion-doped Bi1.8Pb0.35Sr1.9Ca2.1Cu3Oy

Gold (Au) diffusion in superconducting Bi_1.8Pb_0.35Sr_1.9Ca_2.1Cu₃O_y was investigated over the temperature range 500-800 °C by the energy dispersive X-ray fluorescence (EDXRF) technique. It is found that the Au diffusion coefficient decreases as the diffusion-annealing temperature decreases. The temperature dependences of Au diffusion coefficient in grains and over grain boundaries are described by the relations D₁=6.7×10⁻⁵exp(−1.19 eV/k_BT) and D₂=9.7×10⁻⁴exp(−1.09 eV/k_BT), respectively. The diffusion doping of Bi-2223 by Au causes a significant increase of the lattice parameter c by about 0.19%. For the Au-diffused samples, dc electrical resistivity and transport critical current density measurements indicated the critical transition temperature increased from 100 to 104 K and the critical current density increased from 40 to 125 A cm⁻², in comparison with those of undoped samples. From scanning electron microscope (SEM) and X-ray diffraction (XRD) measurements it is observed that Au doping of the sample also improved the surface morphology and increased the ratio of the high-T_c phase to the low-T_c phase. The possible reasons for the observed improvement in microstructure and superconducting properties of the samples due to Au diffusion are also discussed.     

Superconductivity and magnetism in Ir-doped GdFeAsO

The 5d-transition metal, Ir has successfully been doped at Fe site and induced superconductivity in GdFeAsO at T_c = 18.9 K and ∼20 atom%. The Ir-doping shortened the c-axis length and stretched the a-axis one, which led to enhance the coupling between the FeAs- and SmO-layer, and to weaken the bonding between Fe and As atom. Paramagnetism was observed in all of the samples, which was resulted from the magnetic Gd ion as in the F-doped GdFeAsO. An upper critical field of GdFe_0.8Ir_0.2AsO was extrapolated to around 24 T, much smaller than that of F-doped GdFeAsO owing to a relatively low T_c and small value of dH_c2/dT.     

Effect of heating rates on microstructure and superconducting properties of pure MgB2

The influence of different heating rates, ranging from 5 to 30 K min⁻¹, on the microstructure and superconducting of the MgB₂ bulk was investigated. No obvious variation in the grain size was found for the samples heated from 5 K min⁻¹ to 20 K min⁻¹ except for the changes in morphologies. Moreover, the grain refinement was obtained under the heating rate of 30 K min⁻¹. The critical current density (J_c) suggested that the 5 K min⁻¹ sample had the best performance in high field. Here, the differential thermal analysis (DTA) was employed to analyze the kinetics of MgB₂ phase formation with the different heating rates. The results showed that the large amount of MgB₂ formed at low temperature, which lead to compact structures under the slow heating rate. The fast heating rate would promote the evaporation of Mg at high temperature, which was considered to generate the vacancy and impurities in the sample.     

Specific heat measurements in pure and in (Cu, Mn, Fe, Ni)-doped single-crystals of l-arginine phosphate monohydrate

The influence of highly diluted impurities (Cu, Mn, Fe, Ni) on the temperature (T) dependence of the specific heat (c_p) of l-arginine phosphate monohydrate (LAP) was investigated in the temperature range 1.8-300 K. The doped samples yielded values for c_p in excess to those obtained for a pure LAP sample. The melting temperatures (T_m≈420 K) obtained by differential scanning calorimetry for pure and doped LAP samples were found not to be significantly affected by the impurities. The T-dependence of c_p was fully accounted for by taking into consideration the Debye contribution, an Einstein term and a contribution due to both Frenkel and Schottky defects. The model fit all c_p versus T data using a single value for both the Debye (θ_D=160 K) and the Einstein (T_E=376.8 K) temperatures, and for the energy (ε_d=157.9 meV) required to create the defects.     

Rare earth-transition metal compound-based MOSLM for the visible spectral range

We have demonstrated a magneto-optical spatial light modulator in which functionality is realized by (i) heating up to Curie temperature (T_c) magneto-optical elements (pixels) with a semiconductor laser and (ii) application of a switching magnetic field. The pixels were made of films of amorphous rare earth-transition metal compounds (TbFe films with T_c=403 K and DyFe films with T_c=343 K) having good magneto-optical responses for wavelengths from the visible spectral range. We have found that the magnetization direction of pixels can be modulated with a laser radiation density of 5 mJ/cm² and in a switching magnetic field of 15 Oe.     

MgB2 fabrication by diffusion-controlled three layered (B-Mg-B) technique

MgB₂ was successfully fabricated through diffusion-controlled three-layered (B-Mg-B) technique under high pressure. Due to melting temperature of Mg, the material was pre-heat treated at 600 °C between 1 and 48 h. Optimum pre-heat treatment condition was found to be 600 °C for 48 h. Then, the compacted material was grinded and pelletized under pressure of 2 ton. The pellets were heat treated at 600-900 °C for 1-48 h. Optimum heat treatment condition was determined to be 800 °C for 1 h for formation of almost pure MgB₂. Diffusion coefficient was determined with Fick's law and EDX data. Diffusion coefficient value for B in Mg matrix and Mg in B matrix was determined to be 1.66×10⁻⁷ and 3.14×10⁻⁸ cm²/sn, respectively. Best T_c value (39.4 K) was obtained for material heat treated at 800 °C for 1 h. A symmetric hysteresis was obtained for the best MgB₂ material and magnetization decreased with increase in the temperature and the applied magnetic field.     

Electron-phonon interaction in NbB2: a comparison with MgB2

We present a comparison of electron-phonon interaction in NbB₂ and MgB₂, calculated using full-potential, density-functional-based methods in P6/mmm crystal structure. Our results, described in terms of (i) electronic structure, (ii) phonon density of states F(ω), (iii) Eliashberg function α²F(ω), and (iv) the solutions of the isotropic Eliashberg gap equation, clearly show significant differences in the electron-phonon interaction in NbB₂ and MgB₂. We find that the average electron-phonon coupling constant λ is equal to 0.59 for MgB₂ and 0.43 for NbB₂, leading to superconducting transition temperatures T_c at around 22 K for MgB₂ and 3 K for NbB₂.     

Correlated vortex pinning in Si-nanoparticle doped MgB2

The magnetoresistivity and critical current density of well characterized Si-nanoparticle doped and undoped Cu-sheathed MgB₂ tapes have been measured at temperatures T≥28 K in magnetic fields B≤0.9 T. The irreversibility line B_irr(T) for doped tape shows a stepwise variation with a kink around 0.3 T. Such B_irr(T) variation is typical for high-temperature superconductors with columnar defects (a kink occurs near the matching field B_?) and is very different from a smooth B_irr(T) variation in undoped MgB₂ samples. The microstructure studies of nanoparticle doped MgB₂ samples show uniformly dispersed nanoprecipitates, which probably act as a correlated disorder. The observed difference between the field variations of the critical current density and pinning force density of the doped and undoped tape supports the above findings.