Growth of single-phase c-axis aligned La1.2Ca1.8Mn2O7 films on SrTiO3 (001)

We report the growth of single phase, c-axis aligned thin films of La_1.2Ca_1.8Mn₂O₇ on SrTiO₃ (001) substrates using a controlled pulsed laser deposition method. In this method, constraint of epitaxy is utilized to stabilize the Ruddlesdon-Popper (RP) phase of La_1.2Ca_1.8Mn₂O₇. Oxygen ambient pressure and the rate of deposition play a very important role in influencing the epitaxial growth as well as maintaining phase purity of the material. The oxygen pressure inside the deposition chamber was very precisely controlled and varied during the layer-by-layer growth of the film. Films, prepared by our method, show excellent electrical and magnetic characteristics with a sharp metal-insulator transition at T_M-I=90 K, closely followed by a magnetic transition at T_C=91 K.     

Large magnetoresistance in low temperature metallic region of manganite compounds (La0.7−2xEux)(Ca0.3Srx)MnO3 (0.05≤x≤0.15)

Magnetoresistance (MR) and magnetization (dc and ac) measurements have been carried out on the manganites, (La_0.7−2xEu_x)(Ca_0.3Sr_x)MnO₃ (0.05≤x≤0.15), in the temperature range of 5-320 K. At 5 K, an unusually large MR of almost 98% is observed in the x=0.15 sample, nearly up to fields of 4-5 T. This large high-field MR occurs in the metallic region, far below the insulator-metal transition temperature, and does not vary linearly with applied field. The unusual magnetoresistance is explained in the light of various possibilities such as phase segregation, cluster spin-glass behavior, etc.     

Local structure and magnetic properties of Mn substituted manganites studied by EXAFS and Dc magnetic measurements

We report extended X-ray absorption fine structure (EXAFS) measurements at the Mn K edge and magnetic measurements performed on (La_1−xCa_x)(Mn_1−yM_y)O₃ samples (M=Cr or Ni; x=0.37 and 0.75 and y=0.03 or 0.08). The Mn substitution produces important effects on both the sides of the LaMnO₃-CaMnO₃ phase diagram. For x<0.5 the ferromagnetic-metallic phase maintains its main character even after Mn substitution, but both the doping species (Ni or Cr) lower T_C and broaden the magnetic transition, and the EXAFS study evidences two Mn-O distances, suggesting the presence of zones of distorted insulating phase. For x>0.5, after the doping with Cr, the charge ordered phase persists but on a shorter scale, whereas the Jahn-Teller distortion is weakened as indicated by EXAFS measurements, and the formation of ferromagnetic clusters is evidenced by magnetic measurements.EXAFS and magnetic measurements are in mutual agreement, thus confirming the correlation between the local disorder determined by charge localization and magnetic degrees of freedom.     

Magnetic field dependence on transition temperature Tc in cuprate superconductors

We investigate the magnetic field dependence on T_c in the high transition temperature superconductors. It is shown that phonon-enhanced spin fluctuations drive this superconductivity once more suggested by us [Phys. Rev. B 61 (2001) 4289]. We know magnetic field dependence on our transition temperature is in good correspondence with experimental data. It is elucidated that the external field is closely related to the local internal field in order to influence spin fluctuations.     

Magnetic structure of geometrically frustrated compound Co2Cl(OH)3 determined by proton NMR

The magnetic structure of a geometrically frustrated system Co₂Cl(OH)₃ is determined by comparing the observed proton NMR spectrum with numerical calculations based on various magnetic models. The best fit is obtained with a model that the magnetic moments of Co²⁺ ions in the triangular plane are parallel to the principal axis of local crystal field and those of Co²⁺ ions in the kagome lattice plane are randomly disordered in the a-b plane, which nearly bisects the angle between the principal axis of the local field and a line pointing towards the body center of the tetrahedron. The coexistence of the ferromagnetic order in the triangular plane and the random disorder in the kagome plane is consistent with the results of measurements by Zheng et al. However, the magnetic moments of Co²⁺ ions are not directed towards the body center of the tetrahedron as characteristic in the “spin ice” magnetic structure. Furthermore, the Co²⁺ ions in the triangular plane have a smaller magnitude of magnetic moment than those in the kagome plane. Thus, our result suggests that the transition metal compound Co₂Cl(OH)₃ is different from the “spin ice” in magnetic structure, although it is similar to rare-earth pyrochlores in crystal structure.     

Tunneling magnetoresistance in exchange-biased CoFeB/AlOx/Co/IrMn junctions

A series of exchange-biased magnetic tunneling junctions (MTJs) were made in an in-plane deposition field (h) = 500 Oe. The deposition sequence was Si(1 0 0)/Ta(30 Å)/CoFeB(75 Å)/AlO_x(d Å)/Co(75 Å)/IrMn(90 Å)/Ta(100 Å), where d was varied from 12 Å to 30 Å. The MTJ was formed by the cross-strip method with a junction area of 0.0225 mm². The tunneling magnetoresistance (ΔR/R) of each MTJ was measured. The high-resolution cross-sectional transmission electron microscopic (HR X-TEM) image shows the very smooth interface and clear microstructure. X-ray diffraction (XRD) demonstrates that the IrMn layer of the MTJ exhibits a (1 1 1) texture. From the results (ΔR/R) increases from 17% to 50%, as d increases from 12 Å to 30 Å. The tunneling resistance (R_o) of these junctions ranges from 150 Ω to 250 Ω. The exchange-biasing field (H_ex) of the MTJ is 50-95 Oe. Finally, the saturation resistance (R_s) was measured as a function of the angle (α) of rotation, where α is the angle between h and the in-plane saturation field (H_s) = 1.1 kOe. The following figure presents the dependence of R_s on α, instead of originally expected independence, the curve actually varies with a period of π.     

Two-dimensional electron gas in a periodic magnetic field

We study the energy spectrum and electronic properties of a two-dimensional (2D) spinless electron gas in a periodic magnetic field which has the symmetry of a triangular lattice. We show that the energy bands depend strongly on the value of the magnetic field. For large field the low-energy electrons are localized on closed rings where the magnetic field vanishes. This results in the appearance of persistent currents around these rings. We also calculate the intrinsic Hall conductivity, which is quantized when the Fermi level is in a gap.     

Synthesis and magnetic properties of CeVO3 nanostructures

CeVO₃ nanocrystals were fabricated by sintering CeVO₄ precursors in flowing hydrogen. Under an applied field of 20 Oe, a G-type orbital ordering transition, corresponding to the cooperative Jahn-Teller distortion, was enhanced and observed from the magnetization curve of CeVO₃ nanorods, different from that of the nanocrystallites. This enhancement of the orbital ordering transition depended on the giant magnetocrystalline anisotropy induced by strong crystallographic anisotropy. Furthermore, a stronger applied field decreased the anisotropy of electronic state induced by spatial shapes of orbitals and confined the cooperative Jahn-Teller distortion by lifting the orbital degeneracy, leading to the suppression of the orbital ordering transition.     

Effect of Si-spacer layer thickness on magnetic and magnetoresistive properties of Co/Si/Co/GaAs(0 0 1)

The magnetization process of Co/Si/Co/GaAs was studied as a function of Si-spacer layer thickness. Coercivity of Co/Si decreased with increasing Si-spacer layer thickness.The Hysteresis loop changed from two phases to a single phase with decreasing temperature and Si-spacer layer thickness. Magnetoresistance (MR) ratio in current-perpendicular-to-plane (CPP) configuration increased with decreasing Si-spacer layer thickness.     

Structure, magnetic and optical properties of polycrystalline Co-doped TiO2 films

Co-doped TiO₂ films were fabricated under different conditions using reactive facing-target magnetron sputtering. Co doping improves the transformation of TiO₂ from anatase phase to rutile phase. The chemical valence of doped Co in the films is +2. All the films are ferromagnetic with a Curie temperature above 340 K. The average room-temperature moment per Co of the Co-doped TiO₂ films fabricated at 1.86 Pa decreases from 0.74 μ_B at x=0.03 to 0.02 μ_B at x=0.312, and decreases from 0.54 to 0.04 μ_B as x increases from 0.026 to 0.169 for the Co-doped TiO₂ films fabricated at 0.27 Pa. The ferromagnetism originates from the oxygen vacancies created by Co²⁺ dopants at Ti⁴⁺ cations. The optical band gaps value (E_g) of the Co-doped TiO₂ films fabricated at 1.86 Pa decreases linearly from 3.35 to 2.62 eV with the increasing x from 0 to 0.312. For the Co-doped TiO₂ films fabricated at 1.86 Pa, the E_g decreases linearly from 3.26 to 2.53 eV with increasing x from 0 to 0.350.     

Structural and magnetic properties of Cr1+x(Se1−yTey)2 compounds

The structural and magnetic properties of Cr_1+x(Se_1−yTe_y)₂ having a NiAs structure has been studied for (1+x)=1.27, 1.32 and 1.36 and y=0.75 by means of the Korringa-Kohn-Rostoker (KKR) band structure method. The sub-stoichiometry and the disorder on the chalcogenide sub-lattice has been treated by means of the coherent potential approximation (CPA) alloy theory. From total energy calculations a preferential site occupation on the Cr sub-lattice was found together with an antiparallel alignment of the magnetic moments on the two inequivalent Cr layers. The magnetic properties at finite temperature has been studied by means of Monte Carlo simulations on the basis of a classical Heisenberg Hamiltonian and the exchange coupling parameters calculated from first principles. This approach allowed to determine the critical temperature in good agreement with experiment.     

Spin-transfer switching in MgO magnetic tunnel junction nanostructures

Spin-transfer driven switching was observed in MgO based magnetic tunnelling junctions (MTJ) with tunnelling magnetoresistance ratio of up to 160% and the average intrinsic switching current density (J_c0) down to 2 MA/cm², which are the best known results reported in spin-transfer switched MTJ nanostructures. Based on a comparison of results both from MgO and AlO_x MTJs, further switching current decrease via MgO dual structures with two pinned layers is discussed.     

Itinerant electron transport in microscopically inhomogeneous magnetic fields

We report on magnetoresistance measurements in thin nickel films modulated by a periodic magnetic field emanating from micromagnetic arrays fabricated at the film surface. By increasing the strength of the magnetic potential using nickel and dysprosium micromagnets, we are able to quench the anisotropic magnetoresistance (AMR) in the film.     

Magnetic properties of the charge ordered Nd0.75Na0.25MnO3

Nd_0.75Na_0.25MnO₃ polycrystalline ceramic is prepared via sol-gel process and its magnetic properties and electron spin resonance (ESR) spectra have been investigated experimentally. As the compound is cooled from room temperature, a charge-ordered state first develops below 170 K. A high magnetic field melts the charge ordered state and stabilizes a ferromagnetic (FM) state below 170 K. A field induced transition, analogous to a spin flip transition, is observed between 40 and 170 K. The critical temperature for spin flip increases with increasing temperature. Below 130 K, the compound tends to be intrinsically inhomogeneous, i.e. FM clusters and paramagnetic domains coexist in this system at least, which is confirmed by ESR measurements. When the external magnetic field is zero, long range FM interaction is not developed in this system; however, a tendency of re-entrant FM transition is observed in this compound.     

Large negative magnetoresistance in thiospinel CuCrZrS4

We report on large negative magnetoresistance observed in ferromagnetic thiospinel compound CuCrZrS₄. The electrical resistivity increased with decreasing temperature according to the exp(T₀/T)^1/2, an expression derived from variable range hopping with strong electron-electron interaction. The resistivity under a magnetic field was expressed by the same form with the characteristic temperature T₀ decreasing with increasing magnetic field. Magnetoresistance ratio ρ(T,0)/ρ(T,H) is 1.5 for H=90 kOe at 100 K and increases divergently with decreasing temperature reaching 80 at 16 K. Results of magnetization measurements are also presented. A possible mechanism of the large magnetoresistance is discussed.     

Hybrid magnetic transistor

We report the development of a hybrid semiconductor-metal-semiconductor permeable-base transistor in vertical architecture. This transistor has a p-type silicon collector, a thin tin layer as base and a magnetoresistive conjugated polymer, poly(9,9-dioctyl-1,4-fluorenylenevinylene), as emitter material. The transistor transport characteristics are dependent on the applied magnetic field and the base transport factor for positive charge carriers is nearly ideal, independently of the magnetic field in the investigated range.     

Metastable ferromagnetic phases with predictable Tcs in La2MnCo1−xNixO6

Metastable ferromagnetic phases, for different compositions in La₂MnCo_1−xNi_xO₆, are obtained for samples synthesized by a low-temperature method and annealed in air at different temperatures in the range 200-1350 °C. The T_cs of the ferromagnetic phases vary linearly between those of the phases of the end members. T_cs of the different phases of La₂MnCo_1−xNi_xO₆ can be predicted based on the T_cs and spin states of Mn, Co and Ni in the different phases of the end members, La₂MnCoO₆ and La₂MnNiO₆.     

Effects of nonstoichiometry on the properties of electron-doped manganite Pr0.1Ca0.9MnO3

Mn⁴⁺-rich perovskite manganites (nominal composition: Pr_0.1Ca_0.9MnO₃) were synthesized by using a citric acid method and sintered at different temperatures (800, 900, 1000, and 1300 °C) to adjust the concentration of charge carrier. All the samples are found to be in the cluster glass state at low temperature, as indicated by dc and ac magnetization. With the increase of sintering temperature, the ferromagnetic component in samples increases at first, and attains a maximum at 1000 °C, then decreases again at 1300 °C, which could be well interpreted by the change of charge carrier concentration induced by nonstoichiometry, consistent with the trend on the phase diagram. However, nonstoichiometry breaks long-range Mn-O-Mn interaction, resulting in the variance from the phase diagram.