Interactions of water vapor with polycrystalline uranium surfaces - The low temperature regime

The initial interaction of water vapor with polycrystalline uranium surfaces at low temperatures (LT, 200 K), was studied by combined measurements utilizing Direct Recoil Spectrometry (DRS), Auger electron Spectroscopy (AES) and X-ray Photoelectron Spectroscopy (XPS). Three stages of water dissociation and adsorption can be observed: Stage (1) 0-0.6 oxygen monolayer coverage: full (H₂O → O + 2H) dissociation is dominant, coexisting with partial dissociation (H₂O → OH + H). In contrast to room temperature, where the adsorption is of a Langmuir type, in the present low temperature case it is a precursor-state type - the oxygen accumulation is linear, indicating that a constant fraction of the water molecules impinging on the surface diffuses to a dissociation and adsorption site. Only minor oxidation of the uranium occurs. Stage (2) 0.6-full oxygen coverage: only partial dissociation occurs. Still only minor oxidation of uranium takes place. Stage (3) buildup of a second hydroxyl layer, concurrent with slow continuous oxidation of uranium. Subsequent heating of the sample after the described exposure was accompanied by additional continuous oxidation. Above ∼230 K, the main process seems to be OH decomposition and desorption. A comparison is made to the dissociation and adsorption processes at room temperature.     

Inhibition of hydrogen chemisorption on uranium surfaces by traces of water vapor

Traces of about 2% water vapor are sufficient to inhibit hydrogen dissociation and chemisorption on uranium surfaces, under low pressure exposures, at room temperature. The efficiency of the inhibition increases with temperature in the range of 200 - 400 K. The inhibition effect is also influenced by the extent of residual strain of the sample, with increasing inhibition efficiencies exhibited by a less strained surface. O₂, in contrast to H₂O, is not an inhibitor to surface adsorption and dissociation of hydrogen. Three types of mechanisms are discussed in order to account for the above inhibition effect of water. It is concluded that the most probable mechanism involves the reversible adsorption of water molecules on hydrogen dissociation sites causing their “blocking”.     

Interactions of oxygen and CO with AgAu bimetallic nanoparticles on sputtered highly ordered pyrolytic graphite (HOPG) surfaces

Oxidation of AgAu bimetallic nanoparticles on sputtered HOPG by atomic oxygen and reduction of the oxidized surface by CO at room temperature were studied using X-ray photoelectron spectroscopy (XPS). For 2 nm-sized nanoparticles, prepared by postdeposition of Ag on Au-core, atomic oxygen exposure mostly leads to the formation of chemically inert oxygen species. This result is analogous to that of pure Ag and Au nanoparticles of similar sizes on the same substrate. In contrast, “Au on Ag-core” nanoparticles form chemically active oxygen species, suggesting that depending on detailed structures of bimetallic nanoparticles, diverse chemical properties can be obtained.     

The production and oxidation of uranium nanoparticles produced via pulsed laser ablation

Depleted uranium samples were ablated using five nanosecond pulses from a Nd:YAG laser and produced films of ∼1600 Å thickness that were deposited with an angular distribution typical of a completely thermal ablation (cos¹ θ). The films remained contiguous for many months in vacuum but blistered due to tensile stress induced in the films several days after being brought into air. While under vacuum (2 × 10⁻¹⁰ Torr base pressure) the films were allowed to oxidize from the residual gases, of which water vapor was found to be the primary oxidizer. During the oxidation, the samples were monitored with both X-ray and ultraviolet photoemission spectroscopy (XPS and UPS) and were found to oxidize following Langmuir kinetics. That a 2D-surface growth model described the oxidation indicates that, even at these low pressures, oxygen accumulation on the surface is a much faster process than diffusion into the bulk. While bulk diffusion did occur, the oxygen present at the surface saturated the measurements taken using photoemission and diffusion was difficult to observe. A method for determining oxide concentration via photoemission from the valence level, as opposed to the more conventional core levels, is also presented.     

Influence of ion implantation on titanium surfaces for medical applications

The implantation of ions into the near surface layer is a new approach to improve the osseointegration of metallic biomaterials like titanium. Meanwhile it is well known that surface topography and surface physico-chemistry as well as visco-elastic properties influence the cell response after implantation of implants into the human body. To optimize the cell response of titanium, ion implantation techniques have been used to integrate calcium and phosphorus, both elements present in the inorganic bone phase. In this context, the concentration profile of the detected elements and their chemical state have been investigated using X-ray photoelectron spectroscopy and Auger electron spectroscopy depth profiling. Ion implantation leads to strong changes of the chemical composition of the near surface region, which are expected to modify the biofunctionality as observed in previous experiments on the cell response. The co-implantation of calcium and phosphorus samples, which showed best results in the performed tests (biological and physical), leads to a strong modification of the chemical surface composition.     

A spectroscopic study of CNx formation by the keV N2 irradiation of highly oriented pyrolytic graphite surfaces

Amorphous carbon nitride (CN_x) thin layer, formed by the keV N₂⁺ irradiation of highly oriented pyrolytic graphite, has been investigated using X-ray photoelectron and raman spectroscopies, and time-of-flight secondary ion mass spectrometry. C1s X-ray photoelectron spectroscopy (XPS) peak separations indicate that C-N bonds form over and above the graphite fragmentation previously obtained on Ar⁺ irradiation. N1s XPS peak separations indicate three components. Their attributions, and the resultant CN_x structure, are confirmed by angle-resolved XPS and TOF-SIMS analyses.     

Theoretical study of adsorption of water vapor on surface of metallic uranium

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Oxidation and reduction of rough and flat Au surfaces

Very recently, we have shown that the oxidation pattern of very small (<0.7 nm in particle height) and larger Au nanoparticles are dissimilar, i.e. lager particles form Au(III) species upon atomic oxygen exposures, whereas this was not found for the smaller Au nanoparticles. In the present work, we found that the oxidation pattern of a flat Au surface is analogous to those of the larger Au nanoparticles, whereas a rough surface shows a similar oxidation pattern as those of the smaller particles. This result confirms that an increase of the number of undercoordinated atoms of smaller nanoparticles should be responsible for different oxidation patterns. The oxygen species formed on flat Au surfaces can readily react with CO to CO₂, whereas the oxygen species of the rough Au surface is mostly inert to the CO-oxidation, also in agreement with the results for supported Au nanoparticles.     

The initial interactions of beryllium with O2 and H2O vapor at elevated temperatures

In the 310-790 K temperature range, the mechanism of initial oxidation by O₂ is oxide island nucleation and growth. At the lower temperature range, oxygen is first chemisorbed and the oxide nucleates at coverage of ∼0.2. Increasing the temperature causes the oxide islands to nucleate at lower coverage and at 700 K and above, the oxide nucleates without any significant stage of chemisorbed oxygen. The temperature dependence shows that while the dissociation stage is not activated, the oxide nucleation and growth are thermally activated. Also, opposite to O₂ adsorption, the initial H₂O adsorption and oxidation rate was found to decrease with temperature. Opposite to the oxygen case, upon exposure to water vapor there is no noticeable stage of chemisorbed oxygen (or OH) and oxide is directly nucleated. Only after oxide coalescence, this tendency changes and the oxidation rate is increased with temperature.     

Beam induced reduction of U(VI) during X-ray photoelectron spectroscopy: The utility of the U4f satellite structure for identifying uranium oxidation states in mixed valence uranium oxides

Reduction of U^VI by the beam during X-ray photoelectron spectroscopy (XPS) is a commonly observed phenomenon. This can affect the determination of the U oxidation state, or states, in U oxides (or U compounds in general) and compromise the validity of peak parameters derived from U^VI oxide standards. However, there is little quantitative information on the reduction kinetics and species produced. The objective of this contribution is to investigate and quantify the effects of X-ray beam reduction of U^VI during XPS analysis. Successive U4f XPS spectra were taken over a 26 h period during the X-ray induced reduction of U^VI oxy-hydroxide that was precipitated onto the basal plane of mica. In addition, valence band XPS spectra, including the U5f region, were recorded. Factor analysis identified three dominant and, by definition, linearly independent components. Consequently, we fit the U4f level, including the satellite structure, with three components that represented U^VI, U^V, and U^IV. Peak parameters were remarkably stable and consistent with U^VI, U^V, and U^IV over the entire reduction sequence despite the likely formation of a partially covalent mixed-valence U oxide. Although the satellite features for U^IV and U^V were modified by their bonding environment, they still served well as diagnostic tools for identifying U oxidation states. In particular, the 8 eV satellite appears to be a robust indicator of U^V over a range of bonding environments. This is important because the presence of U^V might not be necessarily obvious in the primary peak envelope if XPS energy resolution is low and/or U^IV-U^V binding energy separations are appreciably less than 1 eV. We also discuss insights obtained from modeling the kinetic data for the time evolution of U^VI, U^V, and U^IV.     

Complementary spectroscopic techniques to model the association of contaminant uranium with structural surfaces

Contaminant uranium poses unique problems for decontamination of former weapons processing and nuclear power facilities, as well as chemical plants, waste storage sites and former mining facilities. In addition, dealing with the possibility of intentional (i.e., a terrorist act) or accidental release of radioactive material in a populated area requires an accurate understanding of the nature of the association of such material with structural surfaces. These surfaces must also be considered in the context of repeated contamination, and the importance of atmospheric exposure, interaction with other possible contaminants, and corrosion or surface degradation due to such exposure must be taken into account. Complementary spectroscopic techniques, especially surface spectroscopies, are essential in developing models for the interaction of contaminants with surfaces and interfaces. In this review (which also presents new data on uranium association with corroding steel surfaces), we collect models of this association as determined by spectroscopic techniques, assess the important considerations in the development of more accurate models, and address some of the questions which remain.     

Chemisorption of alkyl thiols and S-alkyl thiosulfates on Pt(1 1 1) and polycrystalline platinum surfaces

The self-assembled monolayers prepared from 1-dodecanethiol (C₁₂SH) or S-dodecylthiosulfate (Bunte salt, C₁₂SSO₃Na) have been characterised on polycrystalline gold and platinum surfaces and on Pt(1 1 1). Contact angle and impedance measurements show that the film quality decreases in the order Au/C₁₂SH > Pt/C₁₂SH ∼ Au/C₁₂SSO₃Na > Pt/C₁₂S SO₃Na. XPS measurements show that the S-SO₃ bond of organic thiosulfates is broken on platinum surfaces and the state of the surface-bound sulfur is indistinguishable from that of thiolate. On platinum three sulfur species are formed upon SAM formation and we suggest that the catalytic activity of platinum is responsible for their existence in pristine monolayers.     

Self-inhibition of water dissociation on magnesium oxide surfaces

Hydroxylated MgO surfaces have been prepared by exposure to water vapour of MgO crystals at room temperature. High hydroxyl coverages were achieved on freshly cleaved surfaces. However, upon adsorption–desorption cycles of the hydroxyl adlayer, the ability of the MgO surfaces to dissociate water was seen to be dramatically inhibited. Reduced reactivities have also been observed on both air- and water-exposed MgO surfaces. This reactive behaviour is discussed in relation to the theoretical prediction that the MgO(100) face is not expected to dissociate water molecules.     

Dissociative adsorption of NO on TiO2(1 1 0) argon ion bombarded surfaces

The interaction of NO with TiO₂(1 1 0) Ar⁺-ion-bombarded surfaces has been studied by X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, Auger electron spectroscopy. Surfaces with different degrees of defects have been characterized by monitoring the evolution of the electronic structure of the surface, with the aim of studying the influence of the surface defects on the interaction with NO. The interaction was studied for exposures up to 500 L. However, the main effects occur already in the first 10 L. The exposure of the surfaces to NO resulted in the removal of defect sites without adsorption of N.     

Preferential surface oxidation of Gd in Gd5Ge4

Gd oxidizes preferentially at the (0 1 0) surface of Gd₅Ge₄. This is consistent with thermodynamic data for the bulk oxides. Upon oxidation in vacuum, the gadolinium oxide displaces or covers the Ge. Oxidation is more extensive at 600 K than at 300 K, because more oxygen is incorporated into the surface and the shift of the Gd binding energy is larger.     

Oxygen induced segregation of aluminum to α-Cu-Al(1 0 0) alloy surfaces studied by low energy ion scattering and X-ray photoelectron spectroscopy

The effect of annealing temperature on the surface composition of α-Cu-Al(1 0 0) alloys for aluminum concentrations of 5, 12 and 17 at% was investigated using X-ray photoelectron spectroscopy (XPS) and low energy ion scattering (LEIS). Two initial states of the sample surfaces were examined: sputter-cleaned and oxidized. The effect of annealing temperature on segregation is different for sputter-cleaned and oxidized samples. Aluminum preferential sputtering and strong oxygen induced aluminum segregation were detected on all examined samples. Whilst for the sputter-cleaned surfaces a small thermal induced segregation was observed, the combination of annealing and oxygen exposure resulted in aluminum enrichment in the 100-300% range relative to the bulk concentration. The segregation rate is proportional to the aluminum concentration for sputter-cleaned surfaces and displays a maximum for the oxidized α-Cu-Al(12 at.%)(1 0 0) surface.     

The interactions of thiophene with polycrystalline UO2

We have studied the adsorption and desorption of thiophene on polycrystalline UO₂ as function of coverage, over the temperature range 100-640 K, using X-ray photoelectron spectroscopy (XPS), temperature programmed desorption (TPD) and electron stimulated desorption (ESD). Thiophene is found to adsorb molecularly on stoichiometric UO₂. C 1s and S 2p XPS spectra are measured at different thiophene exposures and at different temperatures; they show no evidence for the presence of dissociation fragments, confirming that thiophene adsorbs and desorbs molecularly on a polycrystalline stoichiometric UO₂ surface. The variation of the S 2p and C 1s intensity as function of exposure, together with ESD measurements of O⁺ as function of exposure, can be connected to the growth mode of a thiophene film on UO₂; the thiophene film converts from a flat-lying configuration to an inclined structure as coverage increases. The effects of X-rays, UV, and electron irradiation on thiophene films have been studied in two different coverage regimes, monolayer and multilayer. Irradiation leads to a modification of thiophene films, and appreciable concentrations of species stable to 640 K are present on the surface for both regimes. The XPS results suggest that irradiation induces polymerization and oligomerization, as well as formation of thiolates and dissociation fragments of thiophene. The adsorption and reactivity of thiophene on defective UO₂ surfaces have also been studied. The O vacancies and defects in the oxide surface cause cleavage of C-H and C-S bonds leading to the dissociation of thiophene at temperatures as low as 100 K. These results illustrate the important role played by O vacancies in the chemistry of thiophene over an oxide surface.     

Uranium passivation by C implantation: A photoemission and secondary ion mass spectrometry study

Implantation of 33 keV C⁺ ions into polycrystalline U²³⁸ with a dose of 4.3 × 10¹⁷ cm⁻² produces a physically and chemically modified surface layer that prevents further air oxidation and corrosion. X-ray photoelectron spectroscopy and secondary ion mass spectrometry were used to investigate the surface chemistry and electronic structure of this C⁺ ion implanted polycrystalline uranium and a non-implanted region of the sample, both regions exposed to air for more than a year. In addition, scanning electron microscopy was used to examine and compare the surface morphology of the two regions. The U 4f, O 1s and C 1s core-level and valence band spectra clearly indicate carbide formation in the modified surface layer. The time-of-flight secondary ion mass spectrometry depth profiling results reveal an oxy-carbide surface layer over an approximately 200 nm thick UC layer with little or no residual oxidation at the carbide layer/U metal transitional interface.     

Oxidation of low-index FeAl surfaces

The oxidation of the (100), (110) and (111) surfaces of the intermetallic compound FeAl has been investigated using LEED and XPS. On all three surfaces, oxidation at room temperature leads to the formation of an amorphous oxide film on top of an Al-depleted interlayer. The film growth can be divided into two regions of differing kinetics, i.e. the initial formation of a closed oxide film and a subsequent thickening. In the first region, the oxygen-uptake rate varies significantly with surface orientation, while in the thickening regime the uptake is the same for all surfaces. The maximum thickness as well as the composition of the oxide films were found to depend on the initial oxidation rate. At higher oxidation temperatures, ordered oxide films of around 5–8 Å in thickness are formed, very similar to those observed on NiAl. Photoemission spectra from these ordered phases showed evidence for Al atoms in two different chemical environments, i.e. the well-known oxide species in the interior of the film and an additional species present at the oxide/alloy interface.     

Size-dependent oxidation of Pdn (n 13) on alumina/NiAl(110): Correlation with Pd core level binding energies

Small Pd clusters Pd_n (n = 1, 4, 7, 10, 13) deposited on alumina/NiAl(110) at room temperature were examined by X-ray photoelectron spectroscopy (XPS), as-deposited and after exposure to O₂ at temperatures ranging from 100 to 500 K. After O₂ exposure at 100 K, the Pd clusters showed XPS shifts indicative of oxidation. The exception was Pd₄, which did not oxidize under any conditions. The inertness of Pd₄/alumina/NiAl(110) appears to be correlated with a significantly higher-than-expected Pd 3d binding energy, which we attribute to a particularly stable valence shell. None of the clusters examined oxidized during O₂ exposures at 300 K or above, but He⁺ scattering showed that oxygen was bound on the cluster surfaces. Upon heating, all the oxygen associated with these small clusters appeared to spill over and react with the alumina/NiAl(110) support.