Light scattering observations of spin reversal excitations in the fractional quantum Hall regime

Resonant inelastic light scattering experiments access the low lying excitations of electron liquids in the fractional quantum Hall regime in the range 2/5≥ν≥1/3. Modes associated with changes in the charge and spin degrees of freedom are measured. Spectra of spin reversed excitations at filling factor ν?1/3 and at ν?2/5 identify a structure of lowest spin-split Landau levels of composite fermions (CFs) that is similar to that of electrons. Observations of spin wave excitations enable determinations of energies required to reverse spin. The spin reversal energies obtained from the spectra illustrate the significant residual interactions of composite fermions. At ν=1/3 energies of spin reversal modes are larger but relatively close to spin conserving excitations that are linked to activated transport. Predictions of composite fermion theory are in good quantitative agreement with experimental results.     

Evidence for spontaneous interlayer phase coherence in a bilayer quantum Hall exciton condensate

Recent experimental work on the quantized Hall state at total filling factor ν_T=1 in bilayer 2D electron systems has revealed a number of striking phenomena, including a giant and sharply resonant enhancement of the interlayer tunneling conductance at zero bias. The tunneling enhancement is a compelling indicator of spontaneous interlayer phase coherence among the electrons in the system. Such phase coherence is perhaps the single most important attribute of the excitonic Bose condensate which describes this remarkable quantum Hall state.     

Electron-electron interactions in the 2D electron system

In this paper, we report studies of the electron-electron interaction effects in 2D electron systems. The interaction manifests in renormalization of the effective spin susceptibility, effective mass, g^∗-factor, conductivity etc. By applying in-plane magnetic field, we tuned the effective interaction between the electrons and compared with theory the temperature dependence of the conductivity. We find a good agreement with interaction corrections calculated within the Fermi liquid theory. To address the question on the origin of the metal-insulator transition (MIT) in 2D, we explored transport and magnetotransport properties in the vicinity of the MIT and compared our data with solutions of two equations of the renormalization group (RG) theory, which describes temperature evolutions of the resistivity and interaction parameters for 2D electron system. We found a good agreement between the ρ(T,B_∥) data and the RG-theory in a wide range of the in-plane fields. These results support the Fermi liquid type origin of the metallic state and the interpretation of the observed 2D MIT as the true quantum phase transition.     

Dependence of persistent gaps at landau level crossings on relative spin

We report measurements of the quantum Hall state energy gap at avoided crossings between Landau levels originating from different conduction band valleys in AlAs quantum wells. These gaps exhibit an approximately linear dependence on the magnetic field over a wide range of fields and filling factors. More remarkably, we observe an unexpected dependence of the gap size on the relative spin orientation of the crossing levels, with parallel-spin crossings exhibiting larger gaps than antiparallel-spin crossings.     

Coulomb interactions of massless Dirac fermions in graphene; pair-distribution functions and exchange-driven spin-polarized phases

The quasi-2D electrons in graphene behave as massless fermions obeying a Dirac-Weyl equation in the low-energy regime near the two Fermi points. The stability of spin-polarized phases (SPP) in graphene is considered. The exchange energy is evaluated from the analytic pair-distribution functions, and the correlation energies are estimated via a closely similar four-component 2D electron fluid which has been investigated previously. SPPs appear for sufficiently high doping, when the exchange energy alone is considered. However, the inclusion of correlations is found to suppress the spin-phase transition in ideal graphene.     

θ renormalization, electron-electron interactions and super universality in the quantum Hall regime

The renormalization theory of the quantum Hall effect relies primarily on the non-perturbative concept of θ renormalization by instantons. Within the generalized non-linear σ model approach initiated by Finkelstein we obtain the physical observables of the interacting electron gas, formulate the general (topological) principles by which the Hall conductance is robustly quantized and derive—for the first time—explicit expressions for the non-perturbative (instanton) contributions to the renormalization group β and γ functions. Our results are in complete agreement with the recently proposed idea of super universality which says that the fundamental aspects of the quantum Hall effect are all generic features the instanton vacuum concept in asymptotically free field theory.     

Hofstadter spectrum in electric and magnetic fields

The problem of Bloch electrons in two dimensions subjected to magnetic and intense electric fields is investigated. Magnetic translations, electric evolution, and energy translation operators are used to specify the solutions of the Schrödinger equation. For rational values of the magnetic flux quanta per unit cell and commensurate orientations of the electric field relative to the original lattice, an extended superlattice can be defined and a complete set of mutually commuting space-time symmetry operators is obtained. Dynamics of the system is governed by a finite difference equation that exactly includes the effects of: an arbitrary periodic potential, an electric field orientated in a commensurable direction of the lattice, and coupling between Landau levels. A weak periodic potential broadens each Landau level in a series of minibands, separated by the corresponding minigaps. The addition of the electric field induces a series of avoided and exact crossing of the quasienergies, for sufficiently strong electric field the spectrum evolves into equally spaced discreet levels, in this “magnetic Stark ladder” the energy separation is an integer multiple of hE/aB, with a the lattice parameter.     

Universal explicit expression for quantum Hall conductance at any temperatures and chemical potentials

This paper generalises the theorem already obtained [Solid State Commun. 127 (2003) 505] for the high mobility, dissipationless, integer quantum Hall systems at T=0 K to the T>0 K situations. The results obtained are again suitable at both microscopic and macroscopic scales. In comparison [Solid State Commun. 127 (2003) 505], this generalised form gives a universal explicit expression for the Hall conductance σ_xy(μ,T) between any two points selected in such a system as a function of chemical potential and temperature. Further, thermal deviation Δσ_xy(μ,T) from the exact quantised values of σ_xy(μ,T) and the minimum slopes of Hall plateaux in the T>0 cases, observed already in experiments, are also derived in theory. Similar to those in the T=0 K case [Solid State Commun. 127 (2003) 505], the overall quantum Hall behaviour of the system can again be obtained from this theory by simply selecting two points on the two Hall contacts.     

Conductance quantization of an ideal Sharvin contact

Thorough calculations of the conductance of an idealized quantum point contact are presented. The point contact is modelled as a configuration in which two conductive half-spaces are separated by a non-conductive planar screen with a circular window of a given radius a. The screen is considered as opaque for the electrons with the exception of the window. From the viewpoint of the electrical conduction, the half-spaces are interpreted as leads which are perfectly coalesced with one another across the window. We assume that the leads are reservoirs of a strongly degenerate gas of electrons. If the leads are made from an n-type degenerate semiconductor, the Fermi wavelength λ_F = 2π/k_F = 2π/(3π²n)^1/3 may be tens of nanometers. The theory of the conductance Γ_S of such a point contact is reconsidered. Within the framework of the approximation that we use assuming that T = 0, we show that the dependence of Γ_S on the variable k_Fa manifests curved steps terminated by singular spikes. Owing to stochastic influences, the spikes should be seen as maxima in measured spectra. We predict that these maxima should demarcate the edges of the steps in the Γ_S vs. k_Fa plot. This prediction is in agreement with the STM observations reported recently by Nagaoka et al. [K. Nagaoka, S. Yaginuma, T. Nagao, T. Nakayama, Phys. Rev. B. 74 (2006) 033310].     

Inhomogeneous Hall-geometry sample in the quantum Hall regime

A generalization of the known theory describing the Hall channels with integer filling factors in inhomogeneous 2D electronic samples to the case of a stationary nonequilibrium state (with a nonzero Hall voltage V _H across the 2D system) is proposed. For the central strip located near the extremum of the electron density, the theory predicts a change in its width and a shift of the whole strip from the equilibrium position as functions of V _H . The theoretical results are used to interpret recent experiments on measuring the local electric fields along the Hall samples both in equilibrium conditions and in the presence of transport in the quantum Hall regime.     

Vortex lattices in rotating atomic Bose gases with non-local interactions

We study the groundstates of rotating atomic Bose gases with non-local interactions. We focus on the weak-interaction limit of a model involving s- and d-wave interactions. With increasing d-wave interaction, the mean-field groundstate undergoes a series of transitions between vortex lattices of different symmetries (triangular, square, “stripe” and “bubble” crystal phases). We discuss the stability of these phases to quantum fluctuations. Using exact diagonalization studies, we show that with increasing d-wave interaction, the incompressible Laughlin state at filling factor ν=1/2 is replaced by compressible stripe and bubble states.     

Forward scattering approximation and bosonization in integer quantum Hall systems

In this work, we present a model and a method to study integer quantum Hall (IQH) systems. Making use of the Landau levels structure we divide these two-dimensional systems into a set of interacting one-dimensional gases, one for each guiding center. We show that the so-called strong field approximation, used by Kallin and Halperin and by MacDonald, is equivalent, in first order, to a forward scattering approximation and analyze the IQH systems within this approximation. Using an appropriate variation of the Landau level bosonization method we obtain the dispersion relations for the collective excitations and the single-particle spectral functions. For the bulk states, these results evidence a behavior typical of non-normal strongly correlated systems, including the spin-charge splitting of the single-particle spectral function. We discuss the origin of this behavior in the light of the Tomonaga-Luttinger model and the bosonization of two-dimensional electron gases.     

Charge neutral counterflow transport at filling factor 1 in GaAs hole bilayers

Interacting bilayers placed in perpendicular magnetic field exhibit a peculiar quantum Hall state (QHS) at total filling factor ν=1, owing to the carrier-carrier interaction in the two layers. The physics of the ν=1 QHS is similar to that of the many-particle ground state of a superconductor. Unlike conventional superconductors, however, in the ν=1 QHS carriers in one layer pair with vacancies in the opposite layer forming charge neutral particles which flow without dissipation at the lowest temperatures. Here we review the experimental evidence supporting this picture, with an emphasis on magnetotransport in interacting GaAs hole bilayers in a configuration where equal and opposite currents are passed in the two layers.     

Room-temperature magnetoresistance effects of Ag-added Fe3O4 films with single-domain grains

Polycrystalline Ag_x(Fe₃O₄)_1−x films (x=0, 0.1, 0.2 and 0.3) have been prepared by the sol-gel method in combination of the spin-coating technique with a precursor solution containing polyvinyl alcohol (PVA) on fused quartz substrates. XRD analysis and SEM images indicate that the Fe₃O₄ grains are nearly spherical single-domain particles. The coercivities of the films are about 290 Oe for x=0.1 and 360 Oe for x=0.3, respectively, which are nearly the same as the magnetocrystalline anisotropic effective field H_K of Fe₃O₄. At 300 K, the x=0.1 film has a maximal magnetoresistance of −8.7% at a magnetic field of 50 kOe and −3.5% at 8.8 kOe, while the pure Fe₃O₄ film is only −2.2% at 8.8 kOe. This enhancement of the MR can be attributed to the contribution from the spin-dependent scattering at the Ag-Fe₃O₄ interfaces as well as the spin-polarized tunneling at boundaries of Fe₃O₄ grains of the spin-polarized electrons. In addition, different MR behaviors for Ag-added Fe₃O₄ bulk polycrystalline samples and polycrystalline films are discussed.     

Low temperature electronic transports in the presence of a density gradient

In this paper, we review low temperature electronic transport results in high quality two-dimensional electron systems. We discuss the quantization of the diagonal resistance, R_xx, at the edges of several quantum Hall states. Each quantized R_xx value turns out to be close to the difference between the two adjacent Hall plateaus in the off-diagonal resistance, R_xy. Moreover, peaks in R_xx occur at different positions in positive and negative magnetic fields. All three R_xx features can be explained quantitatively by a ∼1% cm electron density gradient. Furthermore, based on this observation, the well known but still enigmatic resistivity rule, relating R_xx to , finds a simple interpretation in terms of this gradient. In another sample, at 1.2 K, R_xx we observe a strongly linear magnetic field dependence. Surprisingly, this linear magnetoresistance also originates from the density gradient. Our findings throw an unexpected light on the relationship between the experimentally measured R_xx and the diagonal resistivity ρ_xx.     

High-quality two-dimensional electron gas at large scale GaN/AlGaN wafer interface prepared by mass production MOCVD systems

Basic electronic properties of two-dimensional electron gas (2DEG) formed at GaN/AlGaN hetero-interface in large-scale (100 mm) wafer made by metal organic chemical vapour deposition (MOCVD) have been reported and discussed. From conventional Hall measurements, highest electron mobility was found to be μ_e∼1680 and 9000 cm²/V s at room temperature and at ∼5 K, respectively, for sheet electron density of n_s∼8×10¹² cm⁻². In magneto-resistance (MR) measurements carried out at 1.5 K in Hall bar sample defined by photolithography and ion implantation, very clear Schubnikov de-Haas oscillations and integer quantum Hall effect were observed in diagonal (R_xx) and off-diagonal (R_xy) resistances, respectively. In addition, a good insulating nature of GaN layer is confirmed by capacitance-voltage (C-V) measurement. These results suggest the high-qualitiness of our 100 mm GaN/AlGaN high electron mobility transistor (HEMT) wafers comparable to those so far reported.     

Optical and intervalley scattering in quantized inversion layers in semiconductors

The momentum relaxation time for scattering of electrons in quantized levels of an inversion layer on a semiconductor surface is calculated for interactions via optical and intervalley phonons. A selection rule is found which prohibits transitions between subbands belonging to the same valley or set of valleys, at least in the zero order to which these scattering processes may occur. Relaxation times for the zero-order interaction and the first-order interaction are obtained for intervalley phonons. The results are applied to the case of a (100)-silicon surface, with electrons in the three lowest subbands (with energy levels E₀, E₁, E'₀) of the two sets of valleys. Agreement with the experimental data of Fang and Fowler is good when the combined effects of intervalley and acoustic scattering are considered.     

Pseudopotentials, correlations, and hierarchy states in quantum hall systems: When the composite Fermion picture works and why

A system of Fermions in a shell of angular momentum l can form a set of multiplets of total angular momentum L. The composite Fermion (CF) picture picks out the lowest lying energy multiplets by selecting from this set a subset that is “Laughlin correlated”, i.e. which maximally avoids pair orbits with the largest pair angular momentum L^′ (or smallest relative angular momentum R=2l−L^′). We demonstrate that Laughlin correlations occur only when the pseudopotential V(L^′) (the interaction energy of a pair as a function of L^′) increases with L^′ more rapidly, than the eigenvalue of L^′2 at the value of L^′ (or R) avoided in the Laughlin correlated state. This requirement is not satisfied for QEs and QHs of the Laughlin ν=1/3 and ν=1/5 states at R=1 and R=3 respectively. At and , clustering of QPs gives lower energy than Laughlin correlations. Novel spin polarized incompressible states at ν=4/11 and ν=4/13 cannot be explained as a second generation in the CF hierarchy.     

Exact results for systems of electrons in the fractional quantum Hall regime II

In a previous work [O. Ciftja, Physica B 404 (2009) 227] we reported the exact calculation of energies for the fractional quantum Hall Laughlin state at filling factor for systems with up to N=4 electrons in a disk geometry. The purpose of this brief extension of the earlier work is to report similar exact results for the other Laughlin state at filling factor . We use the same method of orthogonal Jacobi variables adopted in the earlier work.