Surface structures of K on Mo(1 1 0) surface investigated by RHEED

Phase transitions of K on Mo(1 1 0) have been studied by RHEED technique. As Ba and Cs structures on the bcc(1 1 0) surface, surface structures of K were hexagonal from RT to 250 °C for θ > 0.9 ML. The hexagonal structure successively expanded from α to γ structure with Nishiyama-Wassermamm (N-W) orientation relationship. The nearest neighbor spacing in the α structure at RT was 4.50 Å, which is very closed to the atomic distance of K in metal, and stretched to 5.14 Å in the γ structure at T = 200 °C. At temperatures greater than T = 250 °C, the γ structure oriented in N-W and Kurdjumov-Sachs (K-S) relationships at the same time and stayed up to the temperature of 450 °C. These two orientations of γ structure also appeared in all temperature range for 0.4 < θ < 0.9 ML.     

Two-dimensional glasses and their concentration dependent re-ordering: Dy on Mo(1 1 2)

We performed scanning tunneling microscopy (STM) and low-energy electron diffraction (LEED) experiments for Dy adsorbed on Mo(1 1 2) in the monolayer regime in order to clarify the concentration dependent reordering of the surface glass that exists for coverages above 0.58 of a monolayer (ML) after annealing to temperatures higher than 400 K. The partial reaction model developed earlier is corroborated. The Dy defect structure formed initially in Dy-Mo surface alloy acts as nucleation sites for Dy so that clusters with a wide distribution of lateral distances are formed, as found in particular at a coverage of 0.28 ML. The change in bonding character at coverages above 0.58 ML leads to reordering of the defects and the concentration dependent modulation of the adsorbed Dy layers. Examples at coverages of 0.7, 0.9 and 1.15 ML are shown and compared.     

Thermoluminescence kinetic study of binary lead-silicate glasses

This paper describes a detailed experimental study of the thermoluminescence (TL) properties of four binary lead-silicate glasses, with PbO concentrations ranging from 32% to 62% in mole percent. The TL glow peaks between room temperature and 300 °C were analyzed using a systematic thermal cleaning technique. The T_max-T_stop and E-T_stop methods of analysis were used to identify the number of peaks under the glow curves, and to obtain the activation energy E for each TL trap. A computerized glow curve fitting analysis is used to fit the experimental data to four first-order peaks with maxima at temperatures of 54, 80, 110 and 210 °C, as measured with a heating rate of 2 °C/s. The kinetic parameters of the glow-peak at 210 °C were confirmed by using phosphorescence decay methods of analysis. The TL traps associated with the low-temperature TL peak at 54 °C are found to depend strongly on the PbO concentration of the samples, while the higher-temperature TL peaks show a behavior independent of the PbO concentration. The activation energy E and frequency factor s of the low-temperature TL trap associated with the peak at 54 °C are consistent with a trap involving a delocalized transition through the conduction band. However, the activation energies and frequency factors for the higher-temperature TL traps are consistent with traps involving localized transitions via an excited state below the conduction band. The data suggest that these higher-temperature TL traps are associated with the common silicate matrix in these binary silicate glasses.     

The effects of elements doping on transport and thermoelectric properties of Sr3Ti2O7

The Ruddlesden–Popper (RP) phase compounds (Sr_0.95R_0.05)₃Ti₂O₇ (R=Er, Y, Dy, Gd, Eu, Sm, Nd and La) were prepared, and their transport and thermoelectric properties were investigated. The results indicate that high-T electrical resistivity ρ (300 K<T<1000 K) increases monotonically with temperature and basically has a relation ρ∝T^M, with M varying from 0.91 to 1.92 at temperatures T>~650 K, suggesting acoustic phonon scattering is dominant. At low temperatures (5 K<T<300 K), ρ for (Sr_0.95R_0.05)₃Ti₂O₇ (R=Nd and La) decreases monotonously with decreasing temperature, whereas ρ for (Sr_0.95R_0.05)₃Ti₂O₇ (R=Er, Y, Dy, Gd, Eu and Sm) decreases first, and then increases instead as T decreases to a critical temperature T_c. Moreover, electrical conductivity σ∝T^1/2 holds at lower temperatures, indicating that the electron–electron interaction caused by the presence of disorder dominates the transport process at the low temperatures. Besides, experiments show that at T<~400 K the lattice thermal conductivity of the doped compounds basically decreases with increase of the atomic mass of dopants. Generally, the figure of merit (ZT) at 1000 K increases first, and then decreases with the increase of the dopants' ionic radius, and the largest ZT is achieved in (Sr_0.95Gd_0.05)₃Ti₂O₇ mainly owing to its lower lattice thermal conductivity.     

Surface characterization of self-assembled N-Cu nanostructures

We report on the process of low energy N₂⁺ implantation and annealing of a Cu(0 0 1) surface. Through AES we study the N diffusion process as a function of the substrate temperature. With STM and LEIS we characterize the surface morphology and the electronic structure is analyzed with ARUPS. Under annealing (500 < T < 700 K) N migrates to the surface and reacts forming a Cu_xN compound that decomposes at temperatures above 700 K. LEIS measurements show that N locates on the four-fold hollow sites of the Cu(0 0 1) surface in a c(2 × 2) arrangement. Finally, a gap along the [0 0 1] azimuthal direction is determined by ARUPS. DFT calculations provide support to our conclusions.     

Novel structural phases of Dy thin films on W(1 1 2)

Thin films of the rare-earth metal Dy were grown on W(1 1 2) at room temperature and 570 K. Then the resultant film morphologies were characterised by LEED and STM. A series of novel film morphologies, including c(4 × 6), c(5 × 12) and (5 × 8) structures, were found that are unique among the rare-earth metals. High thermal stability was found for the Dy films (up to 1650 K, close to the melting point at 1685 K) such that the Dy atoms preserved an ordered structure and the Dy volatility was less than would be expected from its vapour pressure. This is an indication of strong electronic interactions between the Dy atoms and the W(1 1 2) substrate.     

Molecular beam epitaxy of organic films investigated by high resolution low energy electron diffraction (SPA-LEED): 3,4,9,10-perylenetetracarboxylicacid-dianhydride (PTCDA) on Ag(1 1 1)

A detailed investigation of the multilayer growth of PTCDA on Ag(1 1 1) by high resolution LEED (SPA-LEED) is reported. The first two monolayers are closed and exhibit a structure, which is commensurate with respect to the underlying Ag(1 1 1) surface. The lattice parameters are close to those of the (1 0 2) plane of the β bulk phase of PTCDA, with deviations ?2%. The vertical stacking of the second layer with respect to the first monolayer (observed at 300 K) corresponds to that in the β bulk phase of PTCDA. At high growth temperatures (400 K), Stranski-Krastanov growth occurs from the third monolayer onward, and PTCDA clusters, preferentially with few well defined facets, grow. The structure of the clusters is that of the thermodynamically more stable α bulk phase of PTCDA. Contrary, at low growth temperatures (200 K), the growth proceeds in the Frank van der Merve mode, with several open layers. From slope selection there is evidence for an Ehrlich-Schwoebel barrier. The lateral packing of the PTCDA grown at low temperatures corresponds within error to that of the β bulk phase. The low temperature structure and morphology is meta-stable. Short annealing at 300 K flattens the PTCDA film, and prolonged annealing at 400 K causes the film to adapt the structure and morphology obtained directly at 400 K growth temperature. Presumably, the formation of layers with a β-phase-like lattice at low temperature is due to the better fit of the β phase, compared to the α phase lattice, to the underlying commensurate monolayer. However, at high growth temperatures, the thermodynamically more stable α phase grows, reducing the area of lattice misfit to the underlying commensurate first two layers by formation of clusters.     

Determination of a (4 × 4) structure formed on a Cu(0 0 1) surface by adsorption of calcium

The adsorption of calcium (Ca) atoms on a Cu(0 0 1) surface has been studied by low-energy electron diffraction (LEED) at 130, 300 and 400 K. It is found that a (4 × 4) was the only LEED pattern appeared at 400 K while a quasi-hexagonal structure was formed in a wide range of submonolayer coverage at 130 K. At 300 K, the (4 × 4) LEED spots were broad and weak. The (4 × 4) structure formed at 400 K was determined by a tensor LEED I-V analysis. It is a new-type of surface alloys consisting of five substitutional Ca atoms, nine surface Cu atoms, and two atomic vacancies in the unit cell. In spite of a quite large size-difference between Ca (3.94 Å) and Cu (2.55 Å) atoms, all Ca atoms are located at the substitutional sites. Among surface alloys so far reported, the atomic size ratio between Cu and Ca in the (4 × 4), 1.54, is the largest. Optimized structural parameters reveal that large lateral displacements of surface Cu atoms, being enabled by the appearance of the vacancies, allow the formation of the (4 × 4) structure.     

Oxygen-induced nano-faceting of Ir(2 1 0)

The adsorption of oxygen and the nanometer-scale faceting induced by oxygen have been studied on Ir(2 1 0). Oxygen is found to chemisorb dissociatively on Ir(2 1 0) at room temperature. The molecular desorption process is complex, as revealed by a detailed kinetic analysis of desorption spectra. Pyramid-shaped facets with {3 1 1} and (1 1 0) orientations are formed on the oxygen-covered Ir(2 1 0) surface when annealed to T?600 K. The surface remains faceted for substrate temperatures T<850 K. For T>850 K, the substrate structure reverts to the oxygen-covered (2 1 0) planar state and does so reversibly, provided that oxygen is not lost due to desorption or via chemical reactions upon which the planar (2 1 0) structure remains. A clean faceted surface was prepared through the use of low temperature surface cleaning methods: using CO oxidation, or reaction of H₂ to form H₂O, oxygen can be removed from the surface while preserving (“freezing”) the faceted structure. The resulting clean faceted surface remains stable for T<600 K. For temperatures above this value, the surface irreversibly relaxes to the planar state.     

The properties of free polymer surfaces and their influence on the glass transition temperature of thin polystyrene films

We present a detailed study of free polymer surfaces and their effects on the measured glass transition temperature (T_g) of thin polystyrene (PS) films. Direct measurements of the near-surface properties of PS films are made by monitoring the embedding of 10 and 20 nm diameter gold spheres into the surface of spin-cast PS films. At a temperature T = 378K( > T_g), the embedding of the spheres is driven by geometrical considerations arising from the wetting of the gold spheres by the PS. At temperatures below T_g ( 363K < T < 370K), both sets of spheres embed 3-4 nm into the PS films and stop. These studies suggest that a liquid-like surface layer exists in glassy PS films and also provide an estimate for the lower bound of the thickness of this layer of 3-4 nm. This qualitative idea is supported by a series of calculations based upon a previously developed theoretical model for the indentation of nanoscale spheres into linear viscoelastic materials. Comparing data with simulations shows that this surface layer has properties similar to those of a bulk sample of PS having a temperature of 374 K. Ellipsometric measurements of the T_g are also performed on thin spin-cast PS films with thicknesses in the range 8nm < h < 290nm. Measurements are performed on thin PS films that have been capped by thermally evaporating 5 nm thick metal (Au and Al) capping layers on top of the polymer. The measured T_g values (as well as polymer metal interface structure) in such samples depend on the metal used as the capping layer, and cast doubt on the general validity of using evaporative deposition to cover the free surface. We also prepared films that were capped by a new non-evaporative procedure. These films were shown to have a T_g that is the same as that of bulk PS (370±1 K) for all film thicknesses measured (> 7 nm). The subsequent removal of the metal layer from these films was shown to restore a thickness-dependent T_g in these samples that was essentially the same as that observed for uncapped PS films. An estimate of the thickness of the liquid-like surface layer was also extracted from the ellipsometry measurements and was found to be 5±1 nm. The combined ellipsometry and embedding studies provide strong evidence for the existence of a liquid-like surface layer in thin glassy PS films. They show that the presence of the free surface is an important parameter in determining the existence of T_g reductions in thin PS films.     

Surface mass diffusion and step stiffness on an anisotropic surface; Mo(0 1 1)

Results of step fluctuation experiments for Mo(0 1 1), using low-energy electron microscopy, are re-examined using recently developed procedures that offer accurate coefficients of surface mass diffusion. By these means, surface diffusion D_s is documented at T/T_m ∼ 0.5, while the crossover to relaxation driven by bulk vacancy diffusion is inferred for T/T_m ∼ 0.6. Here, T_m is the melting temperature T_m = 2896 K. We obtain D_s = 4 × 10⁻⁴ exp(−1.13 eV/k_BT) cm²/s for the temperature interval 1080-1680 K. Possible indications of diffusion along step edges appear for T/T_m ∼ 0.4. The same measurements of step fluctuation amplitudes determine also the step stiffness, which by symmetry is anisotropic on Mo(0 1 1). It is shown that three independent procedures yield mutually consistent step stiffness anisotropies. These are (1) step fluctuation amplitudes; (2) step relaxation rate anisotropies; and (3) the observed anisotropies of islands in equilibrium on the Mo(0 1 1) surface. The magnitude of the step stiffness obtained from step edge relaxation is consistent with earlier measurements that determine diffusion from grain boundary grooving.     

Structural phase transitions at high-temperature in double perovskite Sr2GdRuO6

The crystal structure evolution of the Sr₂GdRuO₆ complex perovskite at high-temperature has been investigated over a wide temperature range between 298 K≤T≤1273 K. Powder X-ray diffraction measurements at room temperature and Rietveld analysis show that this compounds crystallizes in a monoclinic perovskite-type structure with P2₁/n (#14) space group and the 1:1 ordered arrangement of Ru⁵⁺ and Gd³⁺ cations over the six-coordinate M sites, with lattice parameters a=5.81032(8) Å, b=5.82341(4) Å, c=8.21939(7) Å, V=278.11(6) Å³ and angle β=90.311(2)^o. The high-temperature analysis shows that this material suffers two-phase transitions. At 373 K it adopts a monoclinic perovskite structure with I2/m space group, and lattice parameters a=5.81383(2) Å, b=5.82526(4) Å, c=8.22486(1) Å, V=278.56(2) Å³ and angle β=90.28(2)^o. Above of 773 K, it suffers a phase transition from monoclinic I2/m to tetragonal I4/m, with lattice parameters a=5.84779(1) Å, c=8.27261(1) Å, V=282.89(5) Å³ and angle β=90.02(9)^o. The high-temperature phase transition from monoclinic I2/m to tetragonal I4/m is characterized by strongly anisotropic displacements of the anions.     

Surface morphology of metal films deposited on mica at various temperatures observed by atomic force microscopy

Thin films of eight metals with a thickness of 150 nm were deposited on mica substrates by thermal evaporation at various temperatures in a high vacuum. The surface morphology of the metal films was observed by atomic force microscopy (AFM) and the images were characterized quantitatively by a roughness analysis and a bearing analysis (surface height analysis). The films of Au, Ag, Cu, and Al with the high melting points were prepared at homologous temperatures T/T_m = 0.22-0.32, 0.40, and 0.56. The films of In, Sn, Bi, and Pb with the low melting points were prepared at T/T_m = 0.55-0.70, where T and T_m are the absolute temperatures of the mica substrate and the melting point of the metal, respectively. The surface morphology of these metal films was studied based on a structure zone model. The film surfaces of Au, Ag, and Cu prepared at the low temperatures (T/T_m = 0.22-0.24) consist of small round grains with diameters of 30-60 nm and heights of 2-7 nm. The surface heights of these metal films distribute randomly around the surface height at 0 nm and the morphology is caused by self-shadowing during the deposition. The grain size becomes large due to surface diffusion of adatoms and the film surfaces have individual characteristic morphology and roughnesses as T increases. The surface of the Al film becomes very smooth as T increases and the atomically smooth surface is obtained at T/T_m = 0.56-0.67 (250-350 °C). On the other hand, the atomically smooth surface of the Au film is obtained at T/T_m = 0.56 (473 ± 3 °C). The films of In, Sn, Bi, and Pb prepared at T/T_m = 0.55-0.70 also show the individual characteristic surface morphology.     

The chemical potential in surface segregation calculations: AgPd alloys

We put forward a technique for calculating the surface segregation profile in substitutional disordered alloys. The surface internal energy and the effective bulk and surface chemical potentials are calculated using the full charge density exact muffin-tin orbitals method, combined with the coherent potential approximation. The application of our approach is demonstrated to the close-packed surface of Ag_cPd_1−c random alloys with 0 < c < 1. The surface concentration profile, surface energy and segregation energy are investigated as functions of bulk composition. The present results are compared with former theoretical and experimental data. It is found that at low temperature, Ag segregates to the surface layer for the entire bulk composition range. At 0 K, the subsurface layer contains 100% Pd for c ? 0.4, and somewhat more than (2c − 1) Ag in alloys with c > 0.5. The temperature dependence of the segregation profile is significant for Pd rich alloys and for alloys with intermediate concentrations. At temperatures ?600 K, the subsurface layer is obtained to be almost bulk like.     

Neutron scattering study on CeAgAs2

CeAgAs₂, an HfCuSi₂ like layered pnictide, orders antiferromagnetically at T_N=6.2(1) K. The ordering process was monitored in neutron diffraction experiments in the temperature range 10 K≥T≥3.5 K. At T=4 K the lattice parameters are a=5.7438(1) Å, b=5.7696(1) Å and c=21.0067(2) Å. The diffraction pattern of the antiferromagnetic phase with a propagation vector k=[0,0,0] point towards ferromagnetically ordered moments in Ce layers stacked along [001], the individual layers are coupled antiferromagnetically with a +− −+type sequence. The alignment of moments within the Ce layers cannot be determined reliably from the experimental data so that two different structure models are discussed. The proposed metamagnetic transition was confirmed by diffraction experiments applying an external magnetic field at T<T_N. In the interval 4 K≤T≤6 K, a relatively small field of μ₀H≈0.3 T suffices to fully suppress the antiferromagnetic ordering. The effect is completely reversible yet subject to hysteresis: After switching off the external field at any T<T_N the magnetic reflections gain their original intensity within several 10 min indicating the restoring of the antiferromagnetic phase.     

Sulfur-induced mobilization of Au surface atoms on Au(1 1 1) studied by real-time STM

The interaction of sulfur with gold surfaces has attracted considerable interest due to numerous technological applications such as the formation of self-assembled monolayers and as a chemical sensor. Here, we report on the interaction of sulfur with Au(1 1 1) at two different temperatures (300 K and 420 K) studied by real-time scanning tunnelling microscopy, low energy electron diffraction and Auger electron spectroscopy. In the low coverage regime (<0.1 ML), S adsorption lifts the herringbone reconstruction of the clean Au(1 1 1) surface indicating a lateral expansion of the surface layer. An ordered (√3 × √3)R30° sulfur adlayer develops as the coverage reaches ∼0.3 ML. At higher S coverages (>0.3 ML) gold surface atoms are removed from regular terrace sites and incorporated into a growing gold sulfide phase. At 300 K this process leads to the formation of a rough pit and mound surface morphology. This gold sulfide exhibits short-range order and an incommensurate, long-range ordered AuS phase develops upon annealing at 450-525 K. In contrast, formation of an ordered AuS phase via rapid step-retraction rather than etch pit formation is observed during S-interaction with Au(1 1 1) surfaces at 420 K. Our results shed new light on the S-Au(1 1 1) interaction.     

Influence of Dy addition on the magnetocaloric effect of La0.67Ca0.33Mn0.9V0.1O3 ceramics

The influence of partial substitution of La by Dy on the magnetocaloric response of (La_1−xDy_x)_0.67Ca_0.33Mn_0.9V_0.1O₃, where x=0.03, 0.15 and 0.25 is studied. Rietveld refinement of X-ray diffraction pattern using GSAS method shows that the compounds adopt the orthorhombic structure with Pnma space group. The systematic change in lattice parameters and magnetic phase transition indicates the substitution effect of Dy. From the magnetization isotherms at different temperatures, magnetic entropy change close to their respective transition temperatures (T_C) has been evaluated. The maximum value of entropy change near T_C is found to be about 4.8 J/kg K at 187.5 K for LCMVDy_0.03, 2.45 J/kg K at 107.5 K for LCMVDy_0.15 and 2.15 J/kg K at 92.5 K for LCMVDy_0.25 at 4 T. Dy addition produces a reduction in T_C and in magnitude of the magnetic entropy change. Even though the entropy change decreases with increasing Dy substitution the refrigerant temperature range, ΔT, is found to be 10 K for LCMVDy_0.03, 31 K for LCMVDy_0.15 and 35 K for LCMVDy_0.25 compounds [90%] at 4 T. The field dependence of the magnetic entropy change is also analyzed showing the power law dependence, ΔS_M∞Hⁿ where n=0.75(2) for LCMVDy_0.03, n=0.80(4) for LCMVDy_0.15 and n=0.92(8) for LCMVDy_0.25 compounds at their respective transition temperatures. The relative cooling power and its field dependance are also analyzed.     

Theoretical calculation of the temperature coefficient of surface excess entropy of pure liquid metals

The temperature coefficient of surface excess entropy dS_s/dT of pure liquid metals (Al, Ga and Bi) has been calculated in the framework of Skapski's nearest-neighbor interaction-broken-bond model. It is found that this coefficient varies by 47.2%, 69% and 85% for pure liquids Al, Bi and Ga, respectively, in the temperature range between the melting temperature T_m and T_m + 400 K. The value of the coefficient for pure liquid Ga is an order of magnitude larger than that of Al and Bi. The largest increase in dS_S/dT with temperature occurs in the first 100 K away from T_m, being the largest for liquid Ga which is about 43%. This variation is experimentally inaccessible and therefore lacking in the literature and has never been reported.     

Surface properties of liquid In-Zn alloys

The measurements of surface tension and density of zinc, indium and liquid In-Zn alloys containing 0.9, 0.85, 0.75, 0.70, 0.60, 0.40, 0.25 and 0.10 mole fraction of In were carried out using the method of maximum pressure in gaseous bubbles (MBP) as well as dilatometric technique. The technique of sessile drop was additionally applied in the measurements of surface tension for pure indium and zinc. The measurements were performed at temperature range 474-1151 K. The isotherms of surface tension calculated based on Butler's equation at 700 and 1100 K corresponded well with the experimental values for zinc content lower than 0.6 mole fraction. The surface tension calculated for alloys of higher zinc concentrations (0.6 < X_Zn < 0.95) had a positive value of the surface tension temperature coefficient (dσ/dT), which did not coincide with the experimental results. The density as well as molar volume of liquid In-Zn alloys showed almost identical behaviour like the ideal solutions. The observed little deviations were contained within assessed experimental errors.     

Resistivity of thin gold films on mica induced by electron-surface scattering: Application of quantitative scanning tunneling microscopy

We report a comparison between the resistivity measured on thin gold films deposited on mica, with predictions based upon classical theories of size effects (Drude's, Sondheimer's and Calecki's), as well as predictions based upon quantum theories of electron-surface scattering (the modified theory of Sheng, Xing and Wang, the theory of Tesanovic, Jaric and Maekawa, and that of Trivedi and Aschroft). From topographic images of the surface recorded with a Scanning Tunneling Microscope, we determined the rms roughness amplitude, δ and the lateral correlation length, ξ corresponding to a Gaussian representation of the average height-height autocorrelation function, describing the roughness of each sample in the scale of length set by the Fermi wave length. Using (δ, ξ) as input data, we present a rigorous comparison between resistivity data and predictions based upon the theory of Calecki as well as quantum theoretical predictions without adjustable parameters. The resistivity was measured on gold films of different thickness evaporated onto mica substrates, between 4 K and 300 K. The resistivity data covers the range 0.1 < x(T) < 6.8, for 4 K < T < 300 K, where x(T) is the ratio between film thickness and electron mean free path in the bulk at temperature T. We experimentally identify electron-surface and electron-phonon scattering as the microscopic electron scattering mechanisms giving rise to the macroscopic resistivity. The different theories are all capable of estimating the thin film resistivity to an accuracy better than 10%; however the mean free path and the resistivity characterizing the bulk turn out to depend on film thickness. Surprisingly, only the Sondheimer theory and its quantum version, the modified theory of Sheng, Xing and Wang, predict and increase in resistivity induced by size effects that seems consistent with published galvanomagnetic phenomena also arising from electron-surface scattering measured at low temperatures.