Electronic properties of Au nano-particles supported on stoichiometric and reduced TiO2(1 1 0) substrates

Growth modes and electronic properties were analyzed for Au nano-particles grown on stoichiometric and reduced TiO₂(1 1 0) substrates by medium energy ion scattering (MEIS) and photoelectron spectroscopy(PES) using synchrotron-radiation-light. Initially, two-dimensional islands (2D) with a height of one and two atomic layers grow and higher coverage increases the islands height to form three-dimensional (3D) islands for the stoichiometric TiO₂(1 1 0) substrate. In contrast, 3D islands start to grow from initial stage with a small Au coverage (?0.1 ML, 1 ML = 1.39 × 10¹⁵  atoms/cm²: Au(1 1 1)) probably due to O-vacancies acting as a nucleation site. Above 0.7 ML, all the islands become 3D ones taking a shape of a partial sphere and the Au clusters change to metal for both substrates. We observed the Au 4f and Ti 3p core level shifts together with the valence band spectra. The Ti 3p peak for the O-deficient surface shifts to higher binding energy by 0.25 ± 0.05 eV compared to that for the stoichiometric surface, indicating downward band bending by an electron charge transfer from an O-vacancy induced surface state band to n-type TiO₂ substrate. Higher binding energy shifts of Au 4f peaks observed for both substrates reveal an electron charge transfer from Au to TiO₂ substrates. The work functions of Au nano-particles supported on the stoichiometric and reduced TiO₂ substrates were also determined as a function of Au coverage and explained clearly by the above surface and interface dipoles.     

Growth of Ag nanostructures on TiO2(1 1 0)

We present a study of the growth of silver nanoparticles or clusters on a TiO₂(1 1 0) substrate in ultra-high vacuum. The growth is monitored in situ by ion and neutral scattering spectroscopy using He⁺ scattering and Auger spectroscopy. The scattering measurements show that only part of the surface is covered by Ag suggesting formation of clusters. Additionally an ex-situ study was performed by scanning electron microscopy and atomic force microscopy to determine the size distribution of these clusters. The average size distributions were found to range from about 5 to about 20 nm as a function of the evaporation flux. At the higher evaporation flux we observe formation of the smaller sized clusters.     

Photoemission study of the modification of the electronic structure of transition-metal overlayers on TiO2 surfaces II. Cr on TiO2(0 0 1)

The electronic states of the Cr overlayers on TiO₂(0 0 1) surfaces have been investigated using angle-resolved and resonant photoemission spectroscopy with synchrotron radiation. At lower coverages, Cr deposition on TiO₂(0 0 1) creates two well separated in-gap emissions due to the formation of surface Ti³⁺ (3d¹) ions and Cr³⁺ (3d³) ions. At higher coverages, the in-gap emission is developed into the 2-peak-structure emission of Cr 3d character. The corresponding state is considered to be of metallic nature from the viewpoint of the high ability of oxygen adsorption, but has no Fermi edge, indicating a possibility of forming small Cr clusters on TiO₂(0 0 1) at this stage.     

Ultra-thin Si overlayers on the TiO2 (1 1 0)-(1 × 2) surface: Growth mode and electronic properties

The growth of thin subnanometric silicon films on TiO₂ (1 1 0)-(1 × 2) reconstructed surfaces at room temperature (RT) has been studied in situ by X-ray and ultra-violet photoelectron spectroscopies (XPS and UPS), Auger electron and electron-energy-loss spectroscopies (AES and ELS), quantitative low energy electron diffraction (LEED-IV), and scanning tunneling microscopy (STM). For Si coverage up to one monolayer, a heterogeneous layer is formed. Its composition consists of a mixture of different suboxides SiO_x (1 < x ? 2) on top of a further reduced TiO₂ surface. Upon Si coverage, the characteristic (1 × 2) LEED pattern from the substrate is completely attenuated, indicating absence of long-range order. Annealing the SiO_x overlayer results in the formation of suboxides with different stoichiometry. The LEED pattern recovers the characteristic TiO₂ (1 1 0)-(1 × 2) diagram. LEED I-V curves from both, substrate and overlayer, indicate the formation of nanometric sized SiO_x clusters.     

Dissociative adsorption of NO on TiO2(1 1 0) argon ion bombarded surfaces

The interaction of NO with TiO₂(1 1 0) Ar⁺-ion-bombarded surfaces has been studied by X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, Auger electron spectroscopy. Surfaces with different degrees of defects have been characterized by monitoring the evolution of the electronic structure of the surface, with the aim of studying the influence of the surface defects on the interaction with NO. The interaction was studied for exposures up to 500 L. However, the main effects occur already in the first 10 L. The exposure of the surfaces to NO resulted in the removal of defect sites without adsorption of N.     

Photoemission study of the modification of the electronic structure of transition-metal overlayers on TiO2 surfaces: I. Fe on TiO2(1 1 0)

The electronic states of the Fe overlayers on TiO₂(1 1 0) surfaces have been investigated using normal-emission and resonant photoelectron spectroscopy with synchrotron radiation. It was found that Fe grows in a Stranski-Krastanov mode. At low coverages, Fe deposition on TiO₂(1 1 0) is supposed to create surface Ti³⁺(3d¹) ions leading to the same in-gap emission as that is produced by surface oxygen vacancies of TiO₂. At high coverages, Fe-induced in-gap emission is evolved into a bulk Fe spectrum. However, at the beginning, a Fermi edge is not observed, indicating that the small Fe clusters of non-metallic nature are formed. A sharp Fermi edge is formed at higher coverages, indicating that the cluster becomes metallic as the size increases.     

Reactivity of monolayer V2O5 films on TiO2(1 1 0) produced via the oxidation of vapor-deposited vanadium

The growth, and reactivity of monolayer V₂O₅ films supported on TiO₂(1 1 0) produced via the oxidation of vapor-deposited vanadium were studied using X-ray photoelectron spectroscopy and temperature programmed desorption (TPD). Oxidation of vapor-deposited vanadium in 10⁻⁷ Torr of O₂ at 600 K produced vanadia films that contained primarily V³⁺, while oxidation in 10⁻³ Torr at 400 K produced films that contained primarily V⁵⁺. The reactivity of the supported vanadia layers for the oxidation of methanol to formaldehyde was studied using TPD. The activity for this reaction was found to be a function of the oxidation state of the vanadium cations in the film.     

Study of the interactions between the overlayer and the substrate in the early stages of palladium growth on TiO2(1 1 0)

The interaction between palladium and the (1 1 0) surface of a TiO₂ single crystal and the electronic properties of the system were studied by means of photoelectron spectroscopy (core levels and valence band) and resonant photoemission for Pd coverage in the sub- and monolayer range. We performed the metal depositions at room temperature. Similarly to copper, platinum and rhodium, palladium does not reduce titanium, has metallic character already from a quite early deposition, grows with a 3D-island mode and the interactions between palladium and TiO₂ are very weak. Annealing treatments at 400 °C provoke a change in the morphology of the palladium clusters and the formation of islands characterized by a higher ratio between volume and area in contact with the substrate.     

Tracking hydroxyl adsorption on TiO2 (1 1 0) through secondary emission changes

In surface science, rutile TiO₂ continues to be one of the most studied surfaces and in the catalysis field numerous groups study how adsorbates interact with this surface. All groups face the difficult problem of reproducibility due to surface preparation unknowns like defect concentration and the continuous aging of the crystals. Recent studies, using STM imaging, showed that hydroxyl adsorption takes place even in very good vacuum conditions. Upon adsorption, the surface electric field is reduced and the work function decreases. We found that this change may be readily detected in the onset energy of the secondary electrons. By following the onset region of secondary electron emission it is possible to track hydroxyl adsorption in quantities well below the detection level of XPS and LEIS. With this knowledge, we show that the time elapsed after surface preparation and water partial pressure should be accounted in the study of TiO₂ surfaces.     

Scanning tunnelling microscopy and spectroscopy of the reduced TiO2(1 0 0) surface

Scanning tunnelling microscopy and current imaging tunnelling spectroscopy were used to study the topographic and electronic structure of a reduced TiO₂(1 0 0) surface. The STM results showed that the TiO₂(1 0 0) surface is capable to form (1 × 7) reconstruction which can transform to (1 × 3) reconstruction due to reoxidation of the surface. The CITS results showed that the (1 × 7) reconstruction is much more metallic in compared to the (1 × 3) reconstruction showing pronounced surface states at energy 1.3 eV and 0.8 eV below the Fermi level and at energy 1.0-1.2 eV above the Fermi level.     

Structural characterisation of ultra-thin VOx films on TiO2(1 1 0)

The normal incidence X-ray standing wave (NIXSW) technique has been applied to investigate the structure of ultra-thin VO_x films grown on TiO₂(1 1 0) and pre-characterised by core level photoemission. For a film composed of a sub-monolayer coverage of V deposited in ultra-high vacuum the local structure of two coexistent species, labelled ‘oxidic’ and ‘metallic’, has been investigated independently through the use of chemical-shift-NIXSW. The ‘oxidic’ state is shown to be consistent with a mixture of epitaxial or substitutional sites and chemisorption into sites coordinated to three surface O atoms. The metallic V atoms also involve a mixture of chemisorption and second-layer sites above the substrate surface consistent with the formation of small V clusters. VO_x films up to ∼6 atomic layers were also grown by post-oxidation (sequential V deposition and annealing in oxygen) and by reactive evaporation in a partial pressure of oxygen. While films of around one monolayer or less are consistent with epitaxial VO₂ growth, the film quality deteriorates rapidly with increasing thickness and is worse for reactive evaporation. A possible interpretation of the NIXSW data is increasing contributions of V₂O₃ crystallites. The inferior quality of the reactively evaporated films may be due to an insufficient supply of oxygen.     

Self-regulated Ni cluster formation on the TiO2(1 1 0) terrace studied using scanning tunneling microscopy

We have studied the growth mode and morphology of Ni clusters on a TiO₂(1 1 0) surface with a wide terrace using scanning tunneling microscopy (STM) at a low coverage (less than 3 atoms nm⁻²). The Ni clusters are formed on the terrace at the low coverage of 0.2 atoms nm⁻². Their average dimensions are constant in three directions up to 1 atoms nm⁻². The Ni clusters have an oval shape with average sizes of 1.8 nm (along [0 0 1]) × 1.4 nm (along (in the [1 1 0] directions). Above the coverage of 1.0 atoms nm⁻², an increase in the cluster height occurs, retaining an almost constant lateral size. It is proposed that the interaction of the Ni cluster and the support surface regulates the Ni cluster size.     

Structural study of adsorption of isonicotinic acid and related molecules on rutile TiO2(1 1 0) II: XPS

The adsorption of monolayers of the pyridine-carboxylic acid monomers (isonicotinic acid, nicotinic acid, and picolinic acid) on rutile TiO₂(1 1 0) has been studied by means of X-ray photoemission spectroscopy. An investigation of the O 1s spectra shows that the molecular carboxylic groups are deprotonated and, hence, that the molecules bind to the surface in a bidentate mode. Moreover, the binding energy of those core levels that are related to the pyridine ring atoms shift as a function of molecule relative to the substrate O 1s and Ti 3p levels, while the position of the core levels related to emission from the carboxylic group are constant relative to the substrate levels. The molecule-dependent shifts are attributed to local intermolecular interactions that determine the proximity of adjacent molecular rings and thus the core-hole screening response of the neighbouring molecules. We propose a simple molecular arrangement for each case which satisfies the known constraints.     

N incorporation and electronic structure in N-doped TiO2(1 1 0) rutile

We describe the growth and properties of well-defined epitaxial TiO_2−xN_x rutile for the first time. A mixed beam of atomic N and O radicals was prepared in an electron cyclotron resonance plasma source and Ti was supplied from a high-temperature effusion cell or an electron beam evaporator, depending on the required flux. A very high degree of structural quality is generally observed for films grown under optimized anion-rich conditions. N substitutes for O in the lattice, but only at the ∼1 at.% level, and is present as N³⁻. Epitaxial growth of TiO₂ and TiO_2−xN_x rutile prepared under anion-rich conditions is accompanied by Ti indiffusion, leading to interstitial Ti (Ti_i), which is a shallow donor in rutile. Our data strongly suggest that Ti_i donor electrons compensate holes associated with substitutional N²⁻ (i.e., Ti(III) + N²⁻ → Ti(IV) + N³⁻), leading to highly resistive or weakly n-type, but not p-type material. Ti 2p core-level line shape analysis reveals hybridization of N and Ti, as expected for substitutional N. Ti-N hybridized states fall in the gap just above the VBM, and extend the optical absorption well into the visible.     

Surface evolution of rutile TiO2 (1 0 0) in an oxidizing environment

Transmission electron microscopy (TEM) has been used to study the rutile TiO₂ (1 0 0) surface in an oxidizing environment. By changing annealing conditions, TiO₂ surfaces with different morphologies are obtained. We report a new centered (2 × 2) surface reconstruction on this surface. Our experimental data indicates that this is a meta-stable, oxygen deficient structure formed as the disordered surface regains its stoichiometry in an oxidizing annealing environment.     

Deposition and fabrication of alkanethiolate gold nanocluster films on TiO2(1 1 0) and the effects of plasma etching

Deposition and fabrication of films of Au nanoclusters protected by alkanethiolate ligands are attempted on a TiO₂(1 1 0) surface and the structures of films are observed by a scanning tunneling microscope (STM). Effects of oxygen and hydrogen-plasma etching in addition to UV irradiation on the structure and chemical composition of the films are also investigated by using STM and X-ray photoelectron spectroscopy. Alkanethiolate Au nanoclusters are produced using a modified Brust synthesis method and their LB films are dip-coated on TiO₂(1 1 0). Alkanethiolate Au nanoclusters are weakly bound to the substrate and can be manipulated with an STM tip. Net-like structures of alkanethiolate Au nanoclusters are formed by a strong blast of air. Oxygen-plasma etching removes alkanethiolate ligands and simultaneously oxidizes Au clusters. At room temperature, prolonged oxygen-plasma etching causes agglomeration of Au nanoclusters. UV irradiation removes ligands partly, which makes Au nanoclusters less mobile. The net-like structure of alkanethiolate Au clusters produced by a blast of air is retained after oxygen and hydrogen-plasma etching.     

Hydroxylated α-Al2O3 (0 0 0 1) surfaces and metal/α-Al2O3 (0 0 0 1) interfaces

X-ray photoelectron spectroscopy was applied to study the hydroxylation of α-Al₂O₃ (0 0 0 1) surfaces and the stability of surface OH groups. The evolution of interfacial chemistry of the α-Al₂O₃ (0 0 0 1) surfaces and metal/α-Al₂O₃ (0 0 0 1) interfaces are well illustrated via modifications of the surface O1s spectra. Clean hydroxylated surfaces are obtained through water- and oxygen plasma treatment at room temperature. The surface OH groups of the hydroxylated surface are very sensitive to electron beam illumination, Ar⁺ sputtering, UHV heating, and adsorption of reactive metals. The transformation of a hydroxylated surface to an Al-terminated surface occurs by high temperature annealing or Al deposition.     

Room and high-temperature scanning tunnelling microscopy and spectroscopy (HT-STM/STS) investigations of surface nanomodifications created on the TiO2(1 1 0) surface

High-temperature scanning tunnelling microscopy, scanning tunnelling spectroscopy and current imaging tunnelling spectroscopy (HT-STM/STS/CITS) were used to study the topographic and electronic structures changes due to surface modifications of the TiO₂(1 1 0) surface caused by the STM tip. In situ high-temperature STM results showed that the created modifications were stable even at elevated temperatures. The STS/CITS results showed the presence of energy gap below the Fermi level on the untreated regions. The disappearance of energy gap below the Fermi level on the modifications created by the tip was observed. It is assumed that the presence of the tip can change the chemical stoichiometry of the surface from TiO_2−x towards Ti₂O₃.     

Soft X-ray appearance potential spectroscopy (SXAPS) study of TiO2(1 1 0)-1 × 2 and (0 0 1)-1 × 1 surfaces

A soft X-ray appearance potential spectroscopy (SXAPS) apparatus with high sensitivity was built to measure non-derivative spectra. SXAPS spectra (non-derivative) of Ti 2p and O 1s for TiO₂(1 1 0)-1 × 2 and (0 0 1)-1 × 1 surfaces have been measured using low incident currents (about 10 μA/cm²) and a photon counting mode. Density of empty states on Ti and O sites are deduced by self-deconvoluting the spectra. The self-deconvoluted SXAPS spectra are qualitatively similar to those measured by X-ray absorption spectroscopy (XAS). The Ti 2p_3/2 spectrum shows two strong peaks which correspond to t_2g and e_g states. For the O 1s spectrum two strong peaks near the threshold are also found which can be ascribed to O 2pπ and O 2pσ states. These results suggest that the spectra almost obey the dipole selection rule, so-called the “approximate dipole selection rule”. The SXAPS spectra of Ti 2p and O 1s for the (1 1 0) and (0 0 1) surfaces resemble qualitatively, which is consistent with the XAS results. The spectra measured on the (1 1 0)-1 × 2 surface at an incident angle of 45° off normal to the surface and on the (1 1 0) surface sputtered by Ar ions indicate that SXAPS is very sensitive to the surface electronic states.