Band structure calculations on the layered compounds FeGa2S4 and NiGa2S4

For the compounds FeGa₂S₄ and NiGa₂S₄ band structure calculations have been performed by the ab initio plane wave pseudo-potential method. The valence charge density distribution points to an ionic type of chemical bonding between the transition metal atoms and the ligand atoms. Two models for the pseudo-potentials are used to calculate the band structures: (a) only s and p electrons and (b) also the d-shells of the transition metal atoms are included in the pseudo-potentials. The differences between these two cases of band structures are discussed. Energy gap formation peculiarities are analysed for both crystals. Zak's elementary energy band concept is demonstrated for the energy spectra of the considered crystals.     

The electronic structure of CeO2 and PrO2

We have determined the electronic structure of CeO₂ and PrO₂ by performing SCF band calculations. We find that in both systems there are metal f- and d- electrons in the oxygen 2p bands. We discuss the question of valency and ionicity in these systems.     

Excess electrons in reduced rutile and anatase TiO2

As a prototypical photocatalyst, TiO₂ is a material of scientific and technological interest. In photocatalysis and other applications, TiO₂ is often reduced, behaving as an n-type semiconductor with unique physico-chemical properties. In this review, we summarize recent advances in the understanding of the fundamental properties and applications of excess electrons in reduced, undoped TiO₂. We discuss the characteristics of excess electrons in the bulk and at the surface of rutile and anatase TiO₂ focusing on their localization, spatial distribution, energy levels, and dynamical properties. We examine specific features of the electronic states for photoexcited TiO₂, for intrinsic oxygen vacancy and Ti interstitial defects, and for surface hydroxyls. We discuss similarities and differences in the behaviors of excess electrons in the rutile and anatase phases. Finally, we consider the effect of excess electrons on the reactivity, focusing on the interaction between excess electrons and adsorbates.     

Bifunctional photocatalysis of TiO2/Cu2O composite under visible light: Ti in organic pollutant degradation and water splitting

Photocatalytic experiment results under visible light demonstrate that both TiO₂ and Cu₂O have low activity for brilliant red X-3B degradation and neither can produce H₂ from water splitting. In comparison, TiO₂/Cu₂O composite can do the both efficiently. Further investigation shows that the formation of Ti³⁺ under visible light has great contribution. The mechanism of photocatalytic reaction is proposed based on energy band theory and experimental results. The photogenerated electrons from Cu₂O were captured by Ti⁴⁺ ions in TiO₂ and Ti⁴⁺ ions were further reduced to Ti³⁺ ions. Thus, the photogenerated electrons were stored in Ti³⁺ ions as the form of energy. These electrons trapped in Ti³⁺ can be released if a suitable electron acceptor is present. So, the electrons can be transferred to the interface between the composite and solution to participate in photocatalytic reaction. XPS spectra of TiO₂/Cu₂O composite before and after visible light irradiation were carried out and provided evidence for the presence of Ti³⁺. The image of high-resolution transmission electron microscopy demonstrates that TiO₂ combines with Cu₂O tightly. So, the photogenerated electrons can be transferred from Cu₂O to TiO₂.     

Chemical short-range order in Zr2Ni amorphous alloy

Extended X-ray absorption fine structure (EXAFS) and molecular dynamic (MD) simulation were used to study the short-range order in Zr₂Ni amorphous alloy. It is found that the bond length is significantly shorter for unlike atoms but longer for like atoms in amorphous state than that in the crystalline state. Meanwhile, the coordination number of Ni atom in amorphous structure is only half of that in ideal Zr₂Ni crystalline. Based on these results, we proposed that there exists Zr₂Ni-like chemical short-range order in the Zr₂Ni amorphous alloy.     

Valence band photoemission study of the copper chalcogenide compounds, Cu2S, Cu2Se and Cu2Te

The electronic structures of the copper chalcogenide compounds, Cu₂S, Cu₂Se and Cu₂Te have been investigated by taking photoemission data with synchrotron photon sources. The band calculations are done using the full-potential linear-muffin-tin-orbital method. Since the crystal structures are not clarified well, several simplified structure models are used. The calculated densities of states are compared with the observed spectra. The analysis shows that a sharp peak at −3.5 eV is due to the Cu 3d states, and that the tails at the high and low energy sides of the Cu 3d peak are due to the chalcogen p states.     

Electronic structure and chemical bonding of phosphorus-contained sulfides InPS4, TI3PS4, and Sn2P2S6

The electronic structure of phosphorus-contained sulfides InPS₄, Tl₃PS₄, and Sn₂P₂S₆ was investigated experimentally with X-ray spectroscopy and theoretically by quantum mechanical calculations. The partial densities of electron states calculated with the ab initio multiple scattering FEFF8 code correspond well to their experimental analogues—the X-ray K- and L_2,3-spectra of sulfur and phosphorus. The good agreement between theory and experiment was also achieved for K-absorption spectra of S and P in the investigated sulfides. In spite of the difference in the crystallographic structure of InPS₄, TI₃PS₄, and Sn₂P₂S₆ that influence the form of K-absorption spectra, the electronic structure of their valence bands are rather similar. This is due to the strong interaction of the P and S atoms, which are the nearest neighbors in the compounds studied. The electron densities of p- and s-states of phosphorus are shifted by about 3 eV to lower energies in comparison to the analogous electron states of sulfur. This is connected with the greater electro-negativity of sulfur, and is confirmed by the calculated electron charge transfer from P to S.     

Mechanism of electron beam poled SHG in 0.95GeS2·0.05In2S3 chalcogenide glasses

Utilizing the Maker fringe method, SHG was observed in the 0.95GeS₂·0.05In₂S₃ chalcogenide glass irradiated by the electron beam and the intensity of SH increases with the enhancement of beam current from 15 to 25 nA. According to Raman spectra of the as-prepared and the irradiated one, no distinct micro-structural transformation was found. In this work, the built-in charge model was founded to interpret the poling mechanism of electron beam irradiation, the emission of the secondary electrons and Auger electrons results in the formation of positive region and the absorbed electrons form negative region. The positive region was situated near the poling surface, and the negative region was much deeper than the positive region. Between the two opposite charged regions, a strong space-charge electrostatic field, E_dc, is created, which leads to the nonzero χ⁽²⁾ in the 0.95GeS₂·0.05In₂S₃ glass. The emission of backscattered electrons does no contribution to the formation of E_dc.     

Evolution of electronic structure in Eu1−xLaxFe2As2

We report an angle-resolved photoemission spectroscopy study of electronic structures of Eu_1−xLa_xFe₂As₂ single crystals, in which the spin density wave transition is suppressed with La doping. In the paramagnetic state, the Fermi surface maps are similar for all dopings, with chemical potential shifts corresponding to the extra electrons introduced by the La doping. In the spin density wave state, we identify electronic structure signatures that relate to the spin density wave transition. Bands around M show that the energy of the system is saved by the band shifts towards high energies, and the shifts decrease with increasing doping, in agreement with the weakened magnetic order.     

Bi2Sr2CaCu2O8单晶a-b平面热电势率的各向异性

测量了Bi₂Sr₂CaCu₂O₈单晶a方向的热电势率S_a和b方向的热电势率S_b与温度T的关系,发现在a-b平面内热电势率存在各向异性。认为S_a与S_b的差异来源于b方向的调制结构,并用扩散热电势率S_d,声子曳引热电势率S_g和相关跳跃热电势率S_h三种贡献,对实验结果进行了 关键词：     

Influence of negative pressure on thermoelectric properties of Sb2Te3

We investigated the influence of negative pressure on the electrical conductivity, the Seebeck coefficient, and the power factor of Sb₂Te₃. We performed first-principles calculations with the linearized-augmented plane-wave method considering negative hydrostatic pressure in the range from zero to −2 GPa and doping for electrons and holes up to 10²⁰ cm⁻³. Our results predict a significant increase of the Seebeck coefficient and the power factor under negative pressure for certain doping concentrations.     

First-principles study on electronic structure of Sr2Bi2O5 crystal

The electronic structure of Sr₂Bi₂O₅ is calculated by the GGA approach. Both of the valence band maximum and the conduction band minimum are located at Γ-point. This means that Sr₂Bi₂O₅ is a direct band-gap material. The wide energy-band dispersions near the valence band maximum and the conduction band minimum predict that holes and electrons generated by band gap excitation have a high mobility. The conduction band is composed of Bi 6p, Sr 4d and O 2p energy states. On the other hand, the valence band can be divided into two energy regions ranging from −9.5 to −7.9 eV (lower valence band) and from −4.13 to 0 eV (upper valence band). The former mainly consists of Bi 6s states hybridizing with O 2s and O 2p states, and the latter is mainly constructed from O 2p states strongly interacting with Bi 6s and Bi 6p states.     

Bi2Sr2CaCu2O8+y掺Na样品的超导机制

用熔融法制备了Bi₂Sr₂CaCu₂O_8+y掺Ｎａ多晶样品，转变温度Ｔ_c提高到９０Ｋ以上，最大的零电阻温度达到９２．５Ｋ。在流动氧气退火后，未掺Ｎａ样品Ｔ_c显著降低，而掺Ｎａ样品Ｔ_c几乎不变，说明二者Ｔ_c提高具有不同的机制。据此我们认为Ｎａ替代了Ｂｉ而使Ｂｉｏ层电荷失去平衡，Ｃｕｏ面上电子转移到Ｂｉｏ层而形成空穴，空穴和电子的吸引相 关键词：     

First-principles study of the structural, electronic, and magnetic properties of InCCo3 and InNCo3

Spin-polarized calculations were performed to investigate the structural, elastic, electronic, and magnetic properties of InCCo₃ and InNCo₃. The deviation of our calculated lattice parameters and equilibrium volume from experimental results is less than 0.8% and 2.5%, respectively. The obtained values of elasticity moduli C_ij, bulk modulus B, and shear modulus G are discussed. From the calculated band structure and the total and partial densities of states, we have concluded that these compounds are electrical conductors; moreover, they are bonded by a mixture of covalent, ionic, and metallic bonds. Our calculations show that InCCo₃ has nonmagnetic properties, while InNCo₃ could have a magnetic behaviour, with an average magnetic moment about 0.54 μ_B/atom, which is mostly derived from d electrons of the cobalt atoms in the energy range from −5 eV up to the Fermi level.     

First-principles investigation of the intrinsic defects in Ti3SiC2

First-principles calculations have been carried out to investigate intrinsic defects including vacancies, interstitials, antisite defects, Frenkel and Schottky defects in the 312 MAX phase Ti₃SiC₂. The formation energies of defects are obtained according to the elemental chemical potentials which are determined by the phase stability conditions. The most stable self-interstitials are all found in the hexahedral position surrounded by two Ti(2) and three Si atoms. For the entire elemental chemical potential range considered, our results demonstrated that Si and C related defects, including vacancies, interstitials and Frenkel defects are the most dominant defects. Besides, the present calculations also reveal that the formation energies of C and Si Frenkel defects are much lower than those of all Schottky defects considered. In addition, the calculated profiles of densities of states for the defective Ti₃SiC₂ indicate that these defects should have great influence on its thermal and electrical properties.     

Ab initio band structure calculations of the low-temperature phases of Ag2Se, Ag2Te and Ag3AuSe2

Ab initio band structure calculations were performed for the low-temperature modifications of the silver chalcogenides β-Ag₂Se, β-Ag₂Te and the ternary compound β-Ag₃AuSe₂ by the local spherical wave (LSW) method. Coordinates of the atoms of β-Ag₂Se and β-Ag₃AuSe₂ were obtained from refinements using X-ray powder data. The structures are characterized by three, four and five coordinations of silver by the chalcogen, a linear coordination of gold by Se, and by metal-metal distances only slightly larger than in the metals. The band structure calculations show that β-Ag₃AuSe₂ is a semiconductor, while β-Ag₂Se and β-Ag₂Te are semimetals with an overlap of about 0.1-0.2 eV. The Ag 4d and Au 5d states are strongly hybridized with the chalcogen p states all over the valence bands. β-Ag₂Se and β-Ag₂Te have a very low DOS in the energy range from about −0.1 to +0.5 eV. The calculated effective mass β-Ag₂Se is about 0.1-0.3 m_e for electrons and 0.75 m_e for holes, respectively.     

Infrared optical properties of Ba(Zr0.20Ti0.80)O3 and Ba(Zr0.30Ti0.70)O3 thin films prepared by sol-gel method

Ba(Zr_xTi_1−x)O₃ (BZT) (x = 0.20 and 0.30) thin films are deposited on Pt(1 1 1)/Ti/SiO₂/Si(1 0 0) substrate by sol-gel method. X-ray diffraction patterns show that the thin films have a good crystallinity. Optical properties of the films in the wavelength range of 2.5-12 μm are studied by infrared spectroscopic ellipsometry (IRSE). The optical constants of the BZT thin films are determined by fitting the IRSE data using a classical dispersion formula. As the wavelength increases, the refractive index decreases, while the extinction coefficients increase. The effective static ionic charges are derived, which are smaller than that in a purely ionic material for the BZT thin films.     

Controllable microstructures and multiferroic properties of Pb(Zr0.53Ti0.47)O3-CoFe2O4 composite films

1-3 and 2-2 types Pb(Zr_0.53Ti_0.47)O₃-CoFe₂O₄ (PZT-CFO) composite films with controllable microstructures, consisted by CFO nanopillar embedded in PZT matrix and PZT-CFO gratings respectively, have been fabricated on Pt/Ti/SiO₂/Si substrates by combining lithography technology and pulsed laser deposition. X-ray diffraction confirms that the films are well crystallized under optimized postannealing conditions. Scanning electron microscope reveals that the periodic microstructures can be well controlled. Especially, intrinsic room temperature ferroelectric and ferrimagnetic behaviors are observed simultaneously. The structure-properties relationship is discussed. Our results may provide an alternative method to design and prepare multiferroic composite films with controllable microstructures.     

The electronic structure and magnetism of GdSi2 by first-principles study

We have investigated electronic and magnetic properties of hexagonal, tetragonal, and orthorhombic GdSi₂, using the full-potential linearized augmented plane-wave method based on general gradient approximation for exchange-correlation potential. Antiferromagnetic (AFM) states of the GdSi₂ are found from total energy calculations to be energetically more stable, compared to ferromagnetic (FM) states in all of the considered present crystal structures. It is in good agreement with an experimental result. The calculated magnetic moments of valence electrons of the Gd atoms are 0.16, 0.14, and 0.14 μ_B for hexagonal, tetragonal, and orthorhombic crystal structures in AFM states, respectively, and the Si atoms are coupled antiferromagnetically to the Gd atoms irrespective of crystal structure even though their magnitudes are negligible.     

Band structure and antiferromagnetism of a single CuO2 layer

We have solved a set of self-consistency equations for the three-band model describing electrons coupled strongly by antiferromagnetic correlations in a single CuO₂ layer. Strong but finite Hubbard correlations are taken into account by using a random phase approximation for the electronic propagators which contain the combined effect of both the Hubbard correlation and the hybridization of copper and nearest neighbor oxygen states. From the Green functions the band structure is determined, which depends strongly on the doping fraction and the antiferromagnetic order parameter 〈s_Q〉. The main impact of doping is to decrease the magnitude of antiferromagnetic fluctuations, although the decrease appears to be quite slow when compared with experimental data.