Dc and Ac conductivity of La2CuO4+δ

The complex conductivity of La₂CuO_4+δ has been investigated for frequencies 20 Hz≤ν≤4 GHz and temperatures 1.5K≤T≤450 K. Two single crystals with δ≈0 and δ≈0.02 were investigated, using dc (four-probe), reflectometric and contact-free techniques. At high temperatures the dc conductivity is thermally activated with low values of the activation energy. For low temperatures Mott's variable range hopping dominates. The real and imaginary parts of the ac conductivity follow a power-law dependence σ∼v ^s, typical for charge transport by hopping processes. A careful analysis of the temperature dependence of the ac conductivity and of the frequency exponents has been performed. It is not possible to explain all aspects of the ac conductivity in La₂CuO_4+δ by standart hopping models. However, the observed minimum in the temperature dependence of the frequency exponents strongly suggests tunneling of large polarons as dominant transport process.     

Determination of the fractal dimension of activated carbons: Two alternative methods

The fractal dimension of three samples of activated carbon has been determined according to two different experimental methods. The first method is based on the vaporization of gas species from the sample into a CO₂ flow up to a constant temperature of 573 K, and the adsorption of CO₂ from the CO₂ flow onto the surface of the sample under cooling. The second method is based on the application of the equation proposed by Frankel, Halsey and Hill. The degree of concordance between both methods is excellent.     

New optical features to enhance solar cell performance based on porous silicon surfaces

Electrochemical etching is used to fabricate porous silicon (PS) surfaces for both sides of the Si wafer. The effect of PS on performance of Si solar cells is investigated and the reflected mirrors are manipulated to enhance solar cell efficiency. The process is promising for solar cell manufacturing due to its simplicity, lower cost and suitability for mass production. The PS surface has discrete pores and short-branched pores on the polished wafer side. In contrast, the etched backside of the wafer has smaller pore size, with random pores. PS formed on both sides has lower reflectivity value compared with results in other works. Solar cell efficiency is increased to 15.4% with PS formed on both sides compared with the unetched sample and other results. Using empirical models, the optical properties of the refractive index and the optical dielectric constant are investigated. The porous surface texturing properties could enhance and increase the conversion efficiency of porous Si solar cells. The obtained results are in agreement with experimental and other data.     

Experimental observation and simulation of fractal patterns of Au/Ge bilayer films

In this paper, we report on the simulation of fractal clusters and the comparison with experimental fractal patterns. We found that multiple fractal clusters can be formed in Au/Ge bilayer films for different annealing times. The fractal crystallization area increases with the increase in the annealing time. The random successive nucleation model can simulate the actual growth processes of multiple growth sites. The simulating fractal clusters are in good agreement with our experimental fractal patterns. Received: 21 June 2001 / Accepted: 15 December 2001 / Published online: 3 June 2002 RID="*" ID="*"Corresponding author. Fax: +86-551/3602-803, E-mail: chenzw@ustc.edu.cn     

The great potential of coupled substitutions in In2O3 for the generation of bixbyite-type transparent conducting oxides, In2−2xMxSnxO3

The study of coupled substitution of In³⁺ by Sn⁴⁺/M²⁺ species in In₂O₃ has allowed In_2−2xSn_xM_xO₃ solid solutions with bixbyite structure to be synthesized for M=Ni, Mg, Zn, Cu and Ca. The latter exhibit a rather broad homogeneity range and are characterized by an ordered cationic distribution. More importantly, these novel oxides are transparent conductors, and among them the Zn and Cu phases show a great potential, since one observes a semi-metallic behavior with conductivity up to 3×10² and 3×10³ (Ω cm)⁻¹, respectively, to be compared to 2×10³ (Ω cm)⁻¹ for reduced ITO. Moreover, in contrast to the latter no reducing conditions are required for reaching such performances.     

Al-Induced Crystallization Growth of Si Films by Inductively Coupled Plasma Chemical Vapour Deposition

Polycrystalline Si （poly-Si） films are in situ grown on Al-coated glass substrates by inductively coupled plasma chemical vapour deposition at a temperature as low as 350℃. Compared to the traditional annealing crystalliza- tion of amorphous Si/Al-layer structures, no layer exchange is observed and the resultant poly-Si film is much thicker than Al layer. By analysing the depth profiles of the elemental composition, no remains of A1 atoms are detected in Si layer within the limit （〈0.01 at.%） of the used evaluations. It is indicated that the poly-Si material obtained by Al-induced crystallization growth has more potential applications than that prepared by annealing the amorphous Si/Al-layer structures.     

Multifractal analysis of ITO thin films prepared by electron beam deposition method

In this work, we developed the multifractality and its formalism to investigate the surface topographies of ITO thin films prepared by electron beam deposition method for various annealing temperatures from their atomic force microscopy (AFM) images. Multifractal analysis shows that the spectrum width, Δα (Δα = α_max − α_min), of the multifractal spectra, f(α), can be used to characterize the surface roughness of the ITO films quantitatively. Also, it is found that the f(α) shapes of the as-deposited and annealed films remained left hooked (that is Δf = f(α_min) − f(α_max) > 0), and falls within the range 0.149-0.677 depending upon the annealing temperatures.     

Superhydrophobic properties of silver-coated films on copper surface by galvanic exchange reaction

Hydrophobic properties of thin nanostructured silver films produced by galvanic exchange reaction on a copper surface were studied after passivation with stearic acid. The morphology of the silver films was controlled by varying the concentration of silver nitrate in the solution. Water contact angle as high as 156° and contact angle hysteresis as low as 5° were achieved for samples obtained with initial silver ion concentration of 24.75 mM in the solution. However, a strong dependence of contact angle and contact angle hysteresis on the fractal-like morphology of the silver films was observed with the variation of silver ion concentration.     

Preparation of activated carbons previously treated with hydrogen peroxide: Study of their porous texture

Cedar wood was used as raw material for the preparation of activated carbons by treatment with hydrogen peroxide of different concentrations. The samples were next carbonised and activated under CO₂ atmosphere. The activated carbons were characterised by means of the adsorption isotherms of N₂ at 77 K, as well as by applying the Density Functional Theory (DFT) method and mercury porosimetry. The experimental results corresponding to the activated samples indicate a more remarkable porous development as a consequence of the treatment with hydrogen peroxide, probably due to the elimination of surface complexes produced during the activation step. The DFT diagrams point out that the activating treatment favours the development of medium and narrow-size micropores whereas the carbonisation process leads to the development of wide micropores of size close to that corresponding to mesopores.     

Nonlinear properties and stability against DC accelerated aging stress of praseodymium oxide-based ZnO varistors by Er2O3 doping

The microstructure, nonlinear properties, and stability against DC accelerated aging stress of ZnO-Pr₆O₁₁-CoO-based varistors doped with Er₂O₃ was investigated at sintering temperatures of 1300 and 1350 °C. The addition of Er₂O₃ to ZnO-Pr₆O₁₁-CoO-based varistor greatly improved the nonlinear properties and the varistor sintered at 1300 °C exhibited good nonlinearity, with nonlinear exponent of 52.8 and leakage current of 9.8 μA The increase of sintering temperature deteriorated the nonlinear properties, whereas it greatly improved the stability.     

Nonlinear electrical properties and DC accelerated aging characteristics of ZnO-Pr6O11-CoO-Cr2O3-Dy2O3-based varistors

The nonlinear electrical properties and stability against DC accelerated aging stress of various varistors, which are composed of ZnO-Pr₆O₁₁-CoO-Cr₂O₃-Dy₂O₃ (ZPCCD)-based ceramics, was investigated as a function of Dy₂O₃ content. The varistors with Dy₂O₃ exhibited a high nonlinear exponent above 30, compared with that without Dy₂O₃. The varistor with 0.5 mol% Dy₂O₃ exhibited the highest nonlinearity, with a nonlinear exponent of 66.6 and a leakage current of 1.2 μA. Furthermore, this varistor showed the high stability, in which the variation rate of varistor voltage, of nonlinear exponent, and of leakage are −1.9, −10.5, and +275.0%, respectively, under DC accelerated aging stress, 0.95 V_1 mA/150 °C/24 h.     

Phase separation and partial devitrification in soda-lime silicate glasses

2 O-rich droplets dispersed throughout the SiO₂-rich matrix and nanoparticles of metallic silver. In exchanged specimens the joint effect of colloidal silver and electric field results in partial transformation of the amorphous droplets into crystalline Na₂O particles. Received: 11 February 1998 / Accepted: 20 November 1998 / Published online: 24 February 1999     

Positrons and electron-irradiation induced defects in the layered semiconductor InSe

The positron annihilation characteristics of the layered semiconductor InSe have been investigated. No evidence for low temperature positron trapping is found in as-grown and heavily deformed InSe. The temperature dependence of the S-parameter in these sample exhibits an increase rate in good agreement with the linear expansion coefficient along the c-axis. The positron lifetime spectra of electron-irradiated 0.01% Sn-doped InSe show a long-lifetime component of 336 ps which is tentatively attributed to positrons trapped at isolated In vacancies. Isochronal annealing experiments performed on these samples show that the recovery of the positron lifetime measured at 77K is accomplished in two stages. The first, starting after annealing at 150K, could be induced by the formation of complexes (V_In-Sn_In). The second stage, observed at temperatures T375K, is attributed to the dissociation of these complexes and subsequent annealing of the In vacancies.     

Electron trapping center and SnO2-doping mechanism of indium tin oxide

Indium tin oxide (ITO) and Er³⁺-doped ITO powders were prepared by a conventional ceramic method. The density of ITO powders and optical absorption spectra of Er³⁺ ions in Er³⁺-doped ITO were measured as a function of the SnO₂ doping level. The results obtained were discussed in terms of the trapping center for immobile electrons in ITO. Observed densities of ITO powders were in good agreement with those calculated from their lattice parameters, assuming that the immobile electrons were trapped at the excess interstitial oxygen. The optical absorption spectra of Er³⁺-doped ITO indicated that some In³⁺ ions in ITO were surrounded by 7 and/or 8 oxygen ions; the increase in the coordination number of In³⁺ from 6 in In₂O₃ to 7 and/or 8 in ITO must be caused by the introduction of excess interstitial oxygen into the quasi-anion site in the C-typerare-earth lattice upon SnO₂ doping. It was concluded that the immobile electrons in ITO are trapped at the excess interstitial oxygen, and that the mechanism of conduction carrier generation and compensation upon SnO₂ doping into In₂O₃ can be expressed by the defect equation, 2SnO₂?2Sn_In·+2(1-z)e^′+zO_i ^′′+3O_O ^×+(1-z)/2O₂. Received: 26 November 1999 / Accepted: 20 April 2000 / Published online: 13 September 2000     

The energy and structure of (0 0 1) twist grain boundary in noble metals

The relaxed energy and structure of (0 0 1) twist grain boundary (GB) in noble metals Au, Ag and Cu are simulated by the MAEAM. In-boundary translation between two adjacent grains results in a periodic energy variation and the period is a square with the side length L_Σ/Σ. The lowest energy appears when the two grains are translated relatively to either corner or center of the periodic square. The relaxed GB energy increases smoothly for low-angle boundaries and levels off for larger-angle boundaries except a cusp appeared at θ = 36.87° (Σ = 5). After relaxation, the symmetry of the GB structure is not changed but the displacement of the atoms parallel to the GB plane decreases with increasing the distance of the atoms from the GB plane.     

Magnetization scaling in the ruthenate-cuprate RuSr2Eu1.4Ce 0.6Cu2O10-δ (Ru-1222)

The magnetic properties of the superconducting ruthenate-cuprate RuSr₂Eu _1.4Ce_0.6Cu₂O_10-δ (Ru-1222) have been studied by a scaling analysis of the dc magnetization and ac susceptibility measurements. Non-linear M(H) curves reveal the presence of nano-size clusters with a net magnetic moment of ∼10² μ_B at 180 K, near the deviation from a Curie-Weiss behavior. On cooling, no scaling was observed down to 90 K, discarding the possibility of magnetic phase separation of collinear ferromagnetic particles. We explain this result in terms of a variable number of contributing particles, with a temperature dependent net magnetic moment. For 70 K ≤T≤ 90 K the scaling plots evidence the emergence of a system of non-interacting particles, which couple on further cooling. The observed cluster-glass features are preserved down to the lowest measured temperature (10 K); no signature of long-range order was detected. The frequency shift of the peak in the real part of the ac susceptibility does not follow the Vogel-Fulcher type dependence, as previously reported. The puzzling temperature dependence of the coercive field, H_C(T), is correlated with the changes in the scaling factors.     

Delocalized 2-magnons eigenstates in long-range correlated random Heisenberg chains

We consider the one-dimensional quantum disordered Heisenberg ferromagnetic chain model with long-range correlated exchange couplings and study the nature of collective two-spin excitations. By using an exact diagonalization of the Hamiltonian in the two-spin flip subspace, we compute the spin wave participation number to characterize the localized or delocalized nature of the two-magnon states. For strongly correlated random exchange couplings, extended two-spin excitations with finite energy appear. Integrating the time-dependent Schroedinger equation, we follow the time-evolution of an initially localized two-spin state. We find that, associated with the emergence of extended spin waves, the wave-packet mean-square displacement develops a ballistic spread. Further, the single-spin wave-packet acquires an asymmetric profile due to the kinematic interaction between the excited spins.     

Study of the pore size distribution and fractal dimension of HNO3-treated activated carbons

In the present work, the effect of the oxidizing treatment with nitric acid on three activated carbon samples has been studied. The influence of the acid treatment on the surface groups of the different samples has been investigated by means of FT-IR spectroscopy. The pore size distributions of the different samples were determined by means of the HK and DFT methods. The HK method points out a moderate increment of the microporosity due to the action of the nitric acid, whereas the DFT method shows an increase in the microporosity range above 17 Å. Finally, the values of the fractal dimension reveal that the treatment of the samples with nitric acid leads to chemical reactions of a limited extent.     

Characterization of Cr/6H-SiC(0 0 0 1) nano-contacts by current-sensing AFM

The electrical properties and interface chemistry of Cr/6H-SiC(0 0 0 1) contacts have been studied by current-sensing atomic force microscopy (CS-AFM) and X-ray photoelectron spectroscopy (XPS). Cr layers were vapor deposited under ultrahigh vacuum onto both ex situ etched in H₂ and in situ Ar⁺ ion-bombarded samples. The Cr/SiC contacts are electrically non-uniform. Both the measured I-V characteristics and the modeling calculations enabled to estimate changes of the Schottky barrier height caused by Ar⁺ bombardment. Formation of ohmic nano-contacts on Ar⁺-bombarded surfaces was observed.