碳热还原法制备V2O3-C双层包覆磷酸铁锂及其电化学性能

通过V₂O₅的碳热还原反应制备了具有优异倍率性能和循环稳定性的V₂O₃-C双层包覆的磷酸铁锂正极材料. 粉末X射线衍射、元素分析、高分辨投射电镜和拉曼光谱研究表明V2O3相与碳层共包覆于磷酸铁锂颗粒表面. 在V₂O₅的碳热还原反应后,碳含量明显降低,但石墨化程度未发生明显改变. 电化学测试结果表明少量V₂O₃显著改善了磷酸铁锂正极材料的倍率性能和高温循环性能,包含1%氧化钒的复合正极材料在0.2 C放电容量为167 mAh/g,5 C时放电容量为129 mAh/g,并且循环稳定性优异;在55 oC和1 C时放电容量为151 mAh/g,循环100次后无明显容量衰减.     

Vanadium-Al2O3 nanostructured thin films prepared by pulsed laser deposition: Optical switching

The formation and optical response of VO_x nanoparticles embedded in amorphous aluminium oxide (Al₂O₃) thin films by pulsed laser deposition is studied. The thin films have been grown by alternate laser ablation of V and Al₂O₃ targets, which has resulted in a multilayer structure with embedded nanoparticles. The V content has been varied by changing the number of pulses on the V target. It is found that VO_x nanoparticles with dimensions around 5 nm have been formed. The structural analysis shows that the vanadium nanoparticles are oxidized, although probably there is not a unique oxide phase for each sample. The films show a different optical response depending on their vanadium content. Optical switching as a function of temperature has been observed for the two films with the highest vanadium content, at transition temperatures of about −20 °C and 315 °C thus suggesting the presence of nanoparticles with compositions V₄O₇ and V₂O₅, respectively.     

X-RAY PHOTOELECTRON SPECTROSCOPY STUDY ON ELECTROCHROMIC V2O5 THIN FILM

Nanocrystalline V₂O₅ thin films were reactively radio-frequency magnetron-sputtered under optimal deposition parameters. Their electrochemical and electrochromic characteristics were investigated by cyclic voltammetry and in-situ monochromatic transmittance measurements. Upon lithium intercalation, V₂O₅ thin films showed a double electrochromic behavior depending on the wavelength and the intercalation extent. X-ray photoelectron spectroscopy results showed that part of the V⁵⁺ in V₂O₅ was reduced to V⁴⁺ during the Li⁺ intercalation process.     

An XPS study on the surface reduction of V2O5(0 0 1) induced by Ar ion bombardment

The effect of the irradiation with Al Kα X-rays during an XPS measurement upon the surface vanadium oxidation state of a fresh in vacuum cleaved V₂O₅(0 0 1) crystal was examined. Afterwards, the surface reduction of the V₂O₅(0 0 1) surface under Ar⁺ bombardment was studied. The degree of reduction of the vanadium oxide was determined by means of a combined analysis of the O1s and V2p photoelectron lines. Asymmetric line shapes were needed to fit the V³⁺2p photolines, due to the metallic character of V₂O₃ at ambient temperature. Under Ar⁺ bombardment, the V₂O₅(0 0 1) crystal surface reduces rather fast towards the V₂O₃ stoichiometry, after which a much slower reduction of the vanadium oxide occurs.     

Dielectric dispersion in PbO-Sb2O3-As2O3:V2O5 glasses

Dielectric properties, viz. dielectric constant ε′, loss tan δ and a.c conductivity σ_ac (over a wide range of frequency and temperature) and dielectric breakdown strength of PbO-Sb₂O₃-As₂O₃ glasses doped with V₂O₅ (ranging from 0 to 0.5 mol%) are studied. Analysis of these results, based on optical absorption and ESR spectra, indicates that the insulating strength of the glasses is comparatively high when the concentration of V₂O₅ is about 0.3 mol% in the glass matrix.     

Growth and characterization of Y2O3 thin films

Y₂O₃ thin films were grown on silicon (1 0 0) substrates by pulsed-laser deposition at different substrate temperatures and O₂ pressures. The structure and composition of films are studied by using X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The Y₂O₃ thin films deposited in vacuum strongly oriented their [1 1 1] axis of the cubic structure and the film quality depended on the substrate temperature. The magnitude of O₂ pressure obviously influences the film structure and quality. Due to the silicon diffusion and interface reaction during the deposition, yttrium silicate and SiO₂ were formed. The strong relationship between composition and growth condition was discussed.     

Elaboration and characterization of crystalline RF-deposited V2O5 positive electrode for thin film batteries

Investigations were realized on the microstructural and morphological evolution of RF-sputtered vanadium pentoxide thin films during growth. V₂O₅ thin films at different stages of growth were studied by spectroscopic ellipsometry, X-ray diffraction, atomic force microscopy and scanning electron microscopy. Film grain orientation, roughness and density were found to have notable evolution during growth. Electrochemical tests in liquid and solid electrolyte state configuration showed non-linear relationship between discharge capacity and V₂O₅ film thickness (<1 μm), which could be attributed in parts to the observed morphological and microstructural changes during growth, mainly the existence of a gradient density through film thickness and the pronounced top surface roughness.     

Laser-induced forward transfer technique for maskless patterning of amorphous V2O5 thin film

A laser-induced forward transfer technique has been applied for the maskless patterning of amorphous V₂O₅ thin films. A sheet beam of a frequency doubled (SHG) Q-switched Nd:YAG laser was irradiated on a transparent glass substrate (donor), the rear surface of which was pre-coated with a vacuum-deposited V₂O₅ 180 nm thick film was either in direct contact with a second glass substrate (receiver) or a 0.14 mm air-gap was maintained between the donor film and the receiving substrate. Clear, regular stripe pattern of the laser-induced transferred film was obtained on the receiver. The pattern was characterized using X-ray diffraction (XRD), optical absorption spectroscopy, scanning electron microscopy (SEM), energy dispersive analysis of X-ray (EDAX), atomic force microscopy (AFM), etc.     

Epitaxial strain effects on the metal-insulator transition in V2O3 thin films

Effects of epitaxial stress on the metal-insulator transition of V₂O₃ have been studied for in the form of epitaxial thin films grown on α-Al₂O₃ (0001) and LiTaO₃ (0001) substrates. A metallic phase is stabilized down to 2 K in the V₂O₃ thin film on α-Al₂O₃ (0001), where the a-axis is compressed by 4% owing to large epitaxial stress. On the other hand, the transition temperature T_MI is raised by 20 K from the value of 170 K in bulk samples in the film on LiTaO₃ (0001), where the a-axis is expanded. These results suggest an intimate relationship between the a-axis length and T_MI in V₂O₃. The conductivity of the metallic ultrathin films shows logarithmic temperature dependence below 20 K, probably due to the Anderson localization in two-dimensional systems.     

Structure and composition of the segregated Cu in V2O5/Cu system

We have investigated segregation of copper at the surface of V₂O₅ films deposited onto Cu substrate by employing surface analysis techniques. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) confirmed that the Cu is segregated at the surface and its chemical state is Cu₂O. According to secondary ion mass spectroscopy (SIMS) and glow discharge spectroscopy (GDS), the Cu concentration inside the deposited V₂O₅ layer is low. Ultraviolet photoelectron spectroscopy (UPS) and scanning tunneling spectroscopy (STS) revealed the segregation alters the surface local density of states. Surface analysis of deposited samples in ultra high vacuum (UHV) condition verified that the segregation occurs during the deposition. We have extended kinetic tight binding Ising model (KTBIM) to explain the surface segregation during the deposition. Simulation data approve the possibility of surface segregation during room temperature deposition. These results point out that on pure Cu substrate, oxidation occurs during the segregation and low surface energy of Cu₂O is the original cause of the segregation.     

Characteristics of sandwich-structured Al2O3/HfO2/Al2O3 gate dielectric films on ultra-thin silicon-on-insulator substrates

Sandwich-structure Al₂O₃/HfO₂/Al₂O₃ gate dielectric films were grown on ultra-thin silicon-on-insulator (SOI) substrates by vacuum electron beam evaporation (EB-PVD) method. AFM and TEM observations showed that the films remained amorphous even after post-annealing treatment at 950 °C with smooth surface and clean silicon interface. EDX- and XPS-analysis results revealed no silicate or silicide at the silicon interface. The equivalent oxide thickness was 3 nm and the dielectric constant was around 7.2, as determined by electrical measurements. A fixed charge density of 3 × 10¹⁰ cm⁻² and a leakage current of 5 × 10⁻⁷A/cm² at 2 V gate bias were achieved for Au/gate stack /Si/SiO₂/Si/Au MIS capacitors. Post-annealing treatment was found to effectively reduce trap density, but increase in annealing temperature did not made any significant difference in the electrical performance.     

ESR study of lithium incorporation by V2O5 single crystals

Lithium has been chemically and electrochemically incorporated into V₂O₅ single crystals. The ESR spectra of these room temperature bronzes are characterized by the same g tensor as α-Li_xV₂O₅ high temperature bronzes. This suggests that V₂O₅ acts as a three-dimensional framework host and that lithium is inserted into the channels of the orthorhombic structure. However, Li⁺ ions are not randomly distributed into the lattice. A clustering of the paramagnetic centers surrounding these ions is observed, giving an exchange narrowed ESR signal. The usual 29 hyperfine line ESR spectrum of high temperature α-Li_xV₂O₅ is again observed after heating the crystal above 300°C showing that these new bronzes convert to the previously reported Li_xV₂O₅ bronzes.     

Characterization and electrical properties of V2O5-CuO-P2O5 glasses

Characterization and electrical properties of vanadium-copper-phosphate glasses of compositions xV₂O₅-(40−x)CuO-60P₂O₅ have been reported. X-ray diffraction (XRD) confirms the amorphous nature of these glasses. It was observed that, the density (d) decreases gradually while the molar volume (V_m) increases with the increase of the vanadium oxide content in such glasses. This may be due to the effect of the polarizing power strength, PPS, which is a measure of ratio of the cation valance to its diameter. The dc conductivity increases while the activation energy decreases with the increase of the V₂O₅ content. The dc conductivity in the present glasses is electronic and depends strongly upon the average distance, R, between the vanadium ions. Analysis of the electrical properties has been made in the light of small polaron hopping model. The parameters obtained from the fits of the experimental data to this model are reasonable and consistent with glass composition. The conduction is attributed to non-adiabatic hopping of small polaron.     

Electrochemical behaviour of sputtered c-V2O5 and LiCoO2 thin films for solid state lithium microbatteries

Here are reported for the first time electrochemical data on all-solid-state lithium microbatteries using crystalline sputtered V₂O₅ thin films as cathode materials and LiPON as solid electrolyte. The stable specific capacity of 30 µAh/cm² found with a 2.4 µm thick film competes very well with the best values obtained for solid state microbatteries using amorphous films. With the challenge of decreasing the temperature of heat treatment for sputtered LiCoO₂ thin films, we show that a temperature of 500 °C combined with an optimized bias sputtering (-50 V) allows to get highly crystalline deposits, to minimize the presence of Co₃O₄ and to suppress any trace of the cubic phase. At the same time the theoretical specific capacity is reached in the 4.2 V-3 V range and a good cycling behaviour is achieved with a high capacity of 50 µAh/cm²/µm after 140 cycles at 10 µA.cm².     

Microstructure and interfacial properties of HfO2-Al2O3 nanolaminate films

High-k HfO₂-Al₂O₃ composite gate dielectric thin films on Si(1 0 0) have been deposited by means of magnetron sputtering. The microstructure and interfacial characteristics of the HfO₂-Al₂O₃ films have been investigated by using X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and spectroscopic ellipsometry (SE). Analysis by XRD has confirmed that an amorphous structure of the HfO₂-Al₂O₃ composite films is maintained up to an annealing temperature of 800 °C, which is much higher than that of pure HfO₂ thin films. FTIR characterization indicates that the growth of the interfacial SiO₂ layer is effectively suppressed when the annealing temperature is as low as 800 °C, which is also confirmed by spectroscopy ellipsometry measurement. These results clearly show that the crystallization temperature of the nanolaminate HfO₂-Al₂O₃ composite films has been increased compared to pure HfO₂ films. Al₂O₃ as a passivation barrier for HfO₂ high-k dielectrics prevents oxygen diffusion and the interfacial layer growth effectively.     

High elastic modulus in b-axis-oriented single crystal V2O5

The elastic moduli of V₂O₅ are of great importance for the assessment of the buildup of strain during thin-film growth as well as for the analysis of defect generation and propagation. The usually rather small crystal dimensions make a precise experimental determination of the elastic constants highly challenging and only very little is known about the temperature dependent strain evolution. Here large V₂O₅ single crystals grown with different parameter sets are investigated by ultrasonic pulse experiments and by sampled continuous wave ultrasound spectroscopy. The elastic modulus C₂₂ is determined to be 220 GPa at room temperature. Temperature dependent investigations of the elastic behavior show that ultrasonic experiments are suitable for highly sensitive detection of oxygen-deficient phases in rapidly grown samples. In addition they indicate the presence of temperature dependent elastic instabilities in inhomogeneous samples.     

Microstructural, dielectric and spectroscopic properties of Li2O-Nb2O5-ZrO2-SiO2 glass system crystallized with V2O5

Li₂O-Nb₂O₅-ZrO₂-SiO₂ glasses mixed with different concentrations of V₂O₅ were crystallized. The samples were characterized by XRD, SEM and DTA techniques. The SEM pictures indicated that the samples contain well defined and randomly distributed crystal grains. The X-ray diffraction studies have revealed the presence of several crystalline phases in these samples. Optical absorption, ESR and photoluminescence spectral studies on these samples have indicated that a considerable proportion of vanadium ions do exist in V⁴⁺ state in addition to V⁵⁺ state and the redox ratio seems to be increasing with increase in the concentration of crystallizing agent V₂O₅. The infrared spectral studies have pointed out the existence of conventional SiO₄, ZrO₄, NbO₆, VO structural units in the glass ceramic network. The study of dielectric properties suggested a decrease in the insulating character of the glass ceramics with increase in the crystallizing agent. A.C. conductivity in the high temperature region seems to be connected mainly with the polarons involved in the process of transfer from V⁴⁺↔V⁵⁺ ions.     

Electrical properties of thin films of Eu2O3 substituted compounds

Europium oxide (Eu₂O₃) substituted compound has been prepared by solid-solid reaction of the powders of Eu₂O₃, BaCO₃ and CuO at 950°C for 16 hours. The thin films have been deposited by high vacuum evaporation technique (vacuum ≈ 10⁻⁶ torr). The variation of current (I) with voltage (V) at room temperature (RT) i.e. 294 K and in ice (273 K) are found to be linear. The variation of electrical resistivity (ρ) with temperature (T) by heating the sample above RT has been determined. Resistivity is found to decrease with increase in temperature. Further the variation of electrical resistivity (ρ) with temperature (T) from 77 K, liquid nitrogen temperature (LNT), to 270 K has also been determined. It is observed that resistivity suddenly becomes zero at around 87 K. Thus the prepared material has superconducting properties with superconducting transition temperature, T _c at 87 K.      

Adsorption behaviors of V2O5 nanowires on binary mixed self-assembled monolayers

The adsorption behaviors of V₂O₅ nanowires on binary mixed self-assembled monolayers (SAMs) were investigated with variation of the mixing ratio of two differently terminated thiolates on Au. Hydroxyl-covered V₂O₅ nanowires showed a preferential adsorption on amine (NH₂)-terminated thiolates over methyl (CH₃)-terminated ones. However, on the binary mixed SAM of NH₂- and CH₃-terminated thiols, the adsorption behavior did not follow a simple expectation based upon the electrostatic interaction. The total number of adsorbed V₂O₅ nanowires increased with the mole fraction of NH₂-terminated thiolates up to χNH₂∼0.5, then it decreased with further increase of χNH₂. The height distribution of adsorbed nanowires showed that the relative portion of the agglomerated wires thicker than 3.5 nm to individual wires thinner than 3.5 nm increased up to χNH₂∼0.75 and then it decreased with further increase of χNH₂. The dispersion of molecules with polar-functional groups as well as the molecular ordering of mixed SAMs is attributed to such adsorption behaviors of V₂O₅ nanowires.     

Dielectric properties of continuous composition spreaded MgO-Ta2O5 thin films

The dielectric properties of MgO-Ta₂O₅ continuous composition spread (CCS) thin films were investigated. The MgO-Ta₂O₅ CCS thin films were deposited on Pt/Ti/SiO₂/Si substrates by off-Axis RF magnetron sputtering system, and then the films were annealed at 350 °C with rapid thermal annealing system in vacuum. The dielectric constant and loss of MgO-Ta₂O₅ CCS thin films were plotted via 1500 micron-step measuring. The specific point of Ta₂O₅-MgO CCS thin film (post annealed at 350 °C) showing superior dielectric properties of high dielectric constant (k ∼ 28) and low dielectric loss (tan δ < 0⋅004) at 1 MHz were found in the area of 3-5 mm apart from Ta₂O₅ side on the substrate. The cation's composition of thin film was Mg:Ta = 0.4:2 at%.