Hydrogen adsorption on GaAs(0 0 1)-c(4 × 4)

Exposure of the As-terminated GaAs(0 0 1)-c(4 × 4) reconstructed surface to atomic hydrogen (H) at different substrate temperatures (50-480 °C) has been studied by reflection high-energy electron diffraction (RHEED) and scanning tunnelling microscopy (STM). Hydrogen exposure at low temperatures (∼50 °C) produces a disordered (1 × 1) surface covered with AsH_x clusters. At higher temperatures (150-400 °C) exposure to hydrogen leads to the formation of mixed c(2 × 2) and c(4 × 2) surface domains with H adsorbed on surface Ga atoms that are exposed due to the H induced loss of As from the surface. At the highest temperature (480 °C) a disordered (2 × 4) reconstruction is formed due to thermal desorption of As from the surface. The results are consistent with the loss of As from the surface, either through direct thermal desorption or as a result of the desorption of volatile compounds which form after reaction with H.     

Density functional and dynamics study of the dissociative adsorption of hydrogen on Mg (0 0 0 1) surface

A first principles study is performed to investigate the adsorption characteristics of hydrogen on magnesium surface. Substitutional and on-surface adsorption energies are calculated for Mg (0 0 0 1) surface alloyed with the selected elements. To further analyze the hydrogen-magnesium interaction, first principles molecular dynamics method is used which simulates the behavior of H₂ at the surface. Also, charge density differences of substitutionally doped surface configurations were illustrated. Accordingly, Mo and Ni are among the elements yielding lower adsorption energies, which are found to be −9.2626 and −5.2995 eV for substitutionally alloyed surfaces, respectively. In light of the dynamic calculations, Co as an alloying element is found to have a splitting effect on H₂ in 50 fs, where the first hydrogen atom is taken inside the Mg substrate right after the decomposition and the other after 1300 fs. An interesting remark is that, elements which acquire higher chances of adsorption are also seen to be competent at dissociating the hydrogen molecule. Furthermore, charge density distributions support the results of molecular dynamics simulations, by verifying the distinguished effects of most of the 3d and 4d transition metals.     

Quasiclassical studies of Eley-Rideal and hot-atom reactions on a surface at 94 K: H(D) → D(H) + Cu(1 1 1)

Reactions and reaction dynamics of gas-phase H(or D) atoms with D(or H) atoms adsorbed onto a Cu(1 1 1) surface have been investigated by the quasi-classical molecular dynamics method. To simulate the H(D) → D(H) + Cu(1 1 1) system at a 94 K surface temperature, D(or H) adsorbates were disseminated arbitrarily on the surface of Cu(1 1 1) to form 0.50, 0.28 and 0.18 ML of coverages. The interaction of hydrogen atoms and the surface system is worked out by an LEPS function. LEPS parameters have been determined by using the total energy values which were calculated by a density functional theory (DFT) method and the generalized gradient approximation (GGA) for the exchange-correlation energy for various configurations of one and two hydrogen atoms on the Cu(1 1 1) surface. The Cu(1 1 1) surface, imitated by an embedded-atom method which is a many-body potential parameterized by Voter-Chen, is formed as a multilayer slab. The slab atoms are permitted to move. Various processes, trapping onto the surface, inelastic reflection of the incident projectile and penetration of the adsorbate or projectile atom into the slab, are examined. The dependence of these mechanisms on isotopic replacement has also been analyzed. Considerable contributions of the hot-atom pathways for the product formations are consequently observed. The rate of subsurface penetrations is obtained to be larger than the sticking rate onto the surface.     

Determination of deuterium adsorption site on palladium(1 0 0) using low energy ion recoil spectroscopy

Ion beam analysis has been recently applied to study the adsorption phenomena of some adsorbates on metal surfaces. In this paper, surface recoils created by low energy Ne⁺ ions are employed to study the adsorption site of deuterium (D) atoms on Pd(1 0 0). This technique is extremely surface sensitive with the capacity for atomic layer depth resolution. From azimuthal angle observations of Pd(1 0 0) specimen, it was found that at room temperature, D was adsorbed in the fourfold hollow site of Pd(1 0 0) at a height of 0.25 ± 0.05 Å above the surface. The adsorbate remains in the hollow site at all temperatures to 383 K though the vertical height above the surface is found to depend on coverage and for the first time evidence is found of a transition to a p(2 × 2) structure for the adsorbate. There is no evidence of D sitting in the Pd(1 0 0) subsurface at room and higher temperatures.     

Laser induced thermal desorption of hydrogen from Zr(0 0 0 1): Relationship to water dissociation and hydrogen dissolution

On metals such as Zr, during hydrogen exposure, dissolution competes with desorption; this competition can be probed by thermal desorption at different heating rates. In the case of desorption from preadsorbed hydrogen, only ∼1% of the hydrogen can be desorbed even at heating rates of >10¹⁰ K s⁻¹. Recent measurements of the dynamics of hydrogen released by water dissociation on Zr(0 0 0 1) [G. Bussière, M. Musa, P.R. Norton, K. Griffiths, A.G. Brolo, J.W. Hepburn, J. Chem. Phys. 124 (2006) 124704] have shown that the desorbing hydrogen originates from the recombinative desorption of adsorbed H-atoms and that over 25% of the water collisions lead to hydrogen desorption. To gain further insight into the desorption and dissolution of hydrogen and in an attempt to resolve the paradox of the different desorption yields from H₂ vs. H₂O exposures, we report new measurements of the laser induced thermal desorption (LITD) of hydrogen from Zr(0 0 0 1) at initial temperatures down to 90 K. The low temperature was chosen because work function measurements suggested that hydrogen adsorbed into only the outermost (surface site) of the two available adsorption sites (surface and subsurface), from which we postulated much more efficient desorption at high heating rates compared to desorption from the sub-surface sites. However, hydrogen desorption by LITD from Zr(0 0 0 1) at 90 K still only accounts for 1% of the adsorbed species, the remainder dissolving into the bulk at LITD heating rates. The different yields alluded to above remain unexplained (Bussière, 2006).     

Adsorption, ordering, and chemistry of nitrobenzene on Si(1 0 0)-2 × 1

Surface chemistry of nitrobenzene on Si(1 0 0)-2 × 1 has been investigated using multiple internal reflection Fourier-transform infrared spectroscopy (MIR-FTIR), Auger electron spectroscopy (AES) and thermal desorption mass spectrometry. Molecular adsorption of nitrobenzene at submonolayer coverages is dominating at cryogenic temperatures (100 K). As the surface temperature is increased to 160 K, chemical reaction involving nitro group occurs, while the phenyl entity remains intact. Thus, a barrier of approximately 40.8 kJ/mol is established for the interaction of the nitro group of nitrobenzene with the Si(1 0 0)-2 × 1 surface. Further annealing of the silicon surface leads to the decomposition of nitrobenzene. The concentration of nitrogen and oxygen remains constant on a surface within the temperature interval studied here. AES studies also suggest that the majority of carbon-containing products remain bound to the surface at temperatures as high as 1000 K. The only chemical reaction leading to the release of the gaseous products is benzene formation around 670 K. The amount of benzene accounts only for a few percent of the surface species, while the rest of the phenyl groups connected to the silicon surface via a nitrogen linker remain stable even at elevated temperatures, opening an opportunity for stable surface coatings.     

In-situ study on thermal decomposition of 1,3-disilabutane to silicon carbide on Si(1 0 0) surface

The intermediates of thermal decomposition of 1,3-disilabutane (SiH₃CH₂SiH₂CH₃, DSB) to form SiC on Si(1 0 0) surface were in situ investigated by reactive ion scattering (RIS), temperature programmed reactive ion scattering (TPRIS), temperature programmed desorption (TPD), and auger electron spectroscopy (AES). DSB as a single molecular precursor was exposed on Si(1 0 0) surface at a low temperature less than 100 K, and then the substrate was heated up to 1000 K. RIS, TPD, and AES investigations showed that DSB adsorbed molecularly and decomposed to SiC via some intermediates on Si(1 0 0) surface as substrate temperature increasing. Between 117 and 150 K molecularly adsorbed DSB desorbed partially and decomposed to CH₄Si₂, which is the first observation on Si(1 0 0) surface, and further decomposed to CH₄Si between 150 and 900 K. CH₄Si lost hydrogen and formed SiC over 900 K.     

Investigation of hydrogen interaction with the Si(1 1 1)-7 × 7 surface by STM with Bi/W tips

The STM technique with a special Bi/W tip was used to study the interaction of hydrogen atoms with the Si(1 1 1)-7 × 7 surface. The reactivity of different room temperature (RT) adsorption sites, such as adatoms (A), rest atoms (R), and corner holes (CH) was investigated. The reactivity of CH sites was found to be ∼2 times less than that of R and A sites. At temperatures higher than RT, hydrogen atoms rearrange among A, R, and CH sites, with increased occupation of R sites (T <  300 °C). Further temperature increase leads to hydrogen desorption, where its surface diffusion plays an active role. We discuss one of the possible desorption mechanisms, with the corner holes surrounded by a high potential barrier. Hydrogen atoms have a higher probability to overcome the desorption barrier rather than diffuse either into or out of the corner hole. The desorption temperature of hydrogen from CH, R, and A sites is about the same, equal to ∼500 °C. Also it is shown that hydrogen adsorption on the CH site causes slight electric charge redistribution over neighbouring adatoms, namely, increases the occupation of electronic states on A sites in the unfaulted halves of the Si(1 1 1)-7 × 7 unit cell. Based on these findings, the indirect method of investigation with conventional W tips was suggested for adsorbate interaction with CH sites.     

Ethylene hydrogenation on Ni(1 0 0) surface

The hydrogenation of ethylene on Ni(1 0 0) surface has been studied by TDS. The decrease in the bonding energy with increasing coverage is revealed for both of adsorbed hydrogen and ethylene by the shift of desorption to lower temperatures. Ethane formation is only observed on the preadsorbed hydrogen coverage exceeding 0.5 monolayer (ML), coupled with the growth of H₂ shoulder peak at lower temperatures. Further increase of H coverage to saturation reduces the bonding energy of subsequently adsorbed ethylene by 15 kJ/mol and decreases the saturation coverage of ethylene to about one-third on the clean surface. This leads to the shift of ethane desorption from 250 to 220 K and an appearance of additional ethane peak at 180 K. The latter ethane formation coincides with the hydrogenation of surface ethyl species derived from ethyl iodide as a precursor. It indicates that the rate of ethyl formation on the surface would be comparable to that of subsequent hydrogen addition to the surface ethyl species in the hydrogenation of ethylene when the preadsorbed hydrogen coverage approaches 1.0 ML.     

Oxygen-induced nano-faceting of Ir(2 1 0)

The adsorption of oxygen and the nanometer-scale faceting induced by oxygen have been studied on Ir(2 1 0). Oxygen is found to chemisorb dissociatively on Ir(2 1 0) at room temperature. The molecular desorption process is complex, as revealed by a detailed kinetic analysis of desorption spectra. Pyramid-shaped facets with {3 1 1} and (1 1 0) orientations are formed on the oxygen-covered Ir(2 1 0) surface when annealed to T?600 K. The surface remains faceted for substrate temperatures T<850 K. For T>850 K, the substrate structure reverts to the oxygen-covered (2 1 0) planar state and does so reversibly, provided that oxygen is not lost due to desorption or via chemical reactions upon which the planar (2 1 0) structure remains. A clean faceted surface was prepared through the use of low temperature surface cleaning methods: using CO oxidation, or reaction of H₂ to form H₂O, oxygen can be removed from the surface while preserving (“freezing”) the faceted structure. The resulting clean faceted surface remains stable for T<600 K. For temperatures above this value, the surface irreversibly relaxes to the planar state.     

A spectro-microscopic study of the reactive phase separation of Au + Pd and O on Rh(1 1 0)

Reorganization of Au + Pd submonolayers on a Rh(1 1 0) surface occurring during the water formation reaction has been observed and characterized by low energy electron microscopy (LEEM) and X-ray photoemission electron microscopy (XPEEM). The results demonstrate segregation of Au + Pd and oxygen into separate surface phases, the morphology and size of the O and Au + Pd patterns being governed by the reaction parameters and adsorbate coverage. At moderate Au + Pd coverages and temperatures in the range 760-860 K, lamellar periodic Au + Pd/O micro-structures are generated. The results are interpreted in terms of kinetic and thermodynamic considerations.     

Intermixing at the interface of the system Nb/Fe(1 1 0) investigated by STM

The growth of niobium on the Fe(1 1 0) surface at a deposition temperature between room temperature (RT) and 680 K was studied using in situ STM and LEED. At RT we observe no indication of intermixing. Although a final roughness of only 1.7 Å is reached, the crystalline quality is low. At elevated growth temperatures the development of a surface alloy was observed, whose formation is ascribed to an exchange mechanism through which Nb adatoms are incorporated into the Fe surface. These Nb atoms arrange themselves in chains along the [0 0 1] direction. The expelled Fe atoms form islands on the Nb/Fe-alloy substrate. At higher coverage additionally a Nb wetting layer and intermixed 3D islands evolve.     

Molecular dynamics investigation of deposition and annealing behaviors of Cu atoms onto Cu(0 0 1) substrate

The deposition growth and annealing behaviors of Cu atoms onto Cu(0 0 1) are investigated in atomic scale by molecular dynamics (MD) simulation. The results indicate that the film grows approximately in a layer-island mode as the incident energy is from 1 to 5 eV, while surface intermixing can be significantly observed at 10 eV. The surface roughness of the film decreases with increasing the incident energy, and the film after annealing becomes smoother and more ordered. These phenomena may be attributed to the enhanced atomic mobility for higher incident energy and thermal annealing. It also indicates that atomic mixing is more significant with increasing both the incident energy and substrate temperature. In addition, the peak-to-peak distances of radial distribution function (RDF) clearly indicate that the films before and after annealing are still fcc structure except for that at the melting temperature of 1375.6 K. After annealing, the film at the melting temperature returns to fcc structure instead of amorphous. Moreover, the residual stress and Poisson ratio of the film are remarkably affected by the thermal annealing. Furthermore, the density of thin film is obviously affected by the substrate temperature and annealing process. Therefore, one can conclude that high incident energy, substrate temperature and thermal annealing could help to enhance the surface morphology and promote the microstructure of the film.     

Core level photoemission and STM characterization of Ta/Si(1 1 1)-7 × 7 interfaces

We present the results of scanning tunneling microscopy (STM) and photoemission spectroscopy (PES) of the Ta/Si(1 1 1)-7 × 7 system after deposition of Ta at substrate temperatures from 300 to 1250 K. The coverage of Ta varied from 0.05 up to 2.5 of a monolayer (ML). STM shows that at 300 K and coverage less than 1 ML, a disordered chemisorbed phase is formed. Deposition on a hot surface (above 500 K) produces round 3D clusters randomly distributed on the surface. Cluster height and their diameter are found to change drastically with annealing temperature and the Ta coverage. Analysis of photoemission data of the Si 2p core levels shows that at room temperature and at coverage ?1 ML core level binding energy shifts and intensity variations of Si surface related components are observed, which clearly indicate that the reaction starts already at 300 K. Shifts in the binding energy, changes of the peak shapes and intensity of the Ta 4f doublet at higher temperatures can be explained by the formation of stable silicide on the surface.     

Photodissociation of a HCl molecule adsorbed on ice at T = 210 K

This theoretical work concerns the study of the photodissociation of a HCl molecule adsorbed on an ice surface at T = 210 K. Temperature induced disorder is taken into account by a statistics over several configurations extracted from a classical molecular dynamics (MD) simulation. For each configuration, 3D quantum dynamics of the hydrogen photofragment is investigated using the multi-configuration time-dependent Hartree (MCTDH) method. The absorption spectrum at 210 K is obtained by an average over the spectra calculated for each configuration. The surface disorder results in a smoothing of the interferences structures that appear for some given orientations of HCl depending on the surrounding water molecules orientations.     

Temperature- and coverage-dependent evolution of the Au/Pd(1 1 0) surface structure

The morphology and the atomic scale structure of thin gold films (up to 2.5 ML) on Pd(1 1 0) were studied by means of scanning tunneling microscopy and surface X-ray diffraction. At room temperature the films exhibit a multilayer growth mode accompanied by the formation of highly anisotropic islands. Annealing above 500 K significantly increases the smoothness of the gold films, which are in registry with the substrate. Above a critical threshold of two monolayers a (1 × 2) missing-row reconstructed film is found. This reconstructed surface is well ordered after annealing at temperatures above 580 K. The specific gold film morphology is envisaged as a way to relax the strain caused by the mismatch between gold and palladium.     

Effects of predosed oxygen and hydrogen on CO adsorption on Ni(1 0 0)

We present the results of high-resolution electron energy loss experiments on (CO/O)/Ni(1 0 0) and (CO/H)/Ni(1 0 0) systems. Oxygen and hydrogen interact differently with Ni(1 0 0) surface, nevertheless, both species do not affect to a great extent the vibrational properties of CO. A phase of CO molecules weakly bonded to the surface and unaffected by coadsorbed oxygen and hydrogen, is found. Coverage of 0.5 ML of predosed oxygen chemically passivates the Ni(1 0 0) surface and inhibits any CO adsorption at room temperature. CO sites are unambiguously determined for each predosed Ni(1 0 0) surface.     

NMR of Xe on CO/Ir(1 1 1) and on multilayer Xe/Ir(1 1 1)

Nuclear magnetic resonance (NMR) is performed on monolayer (ML) amounts of adsorbed ¹²⁹Xe on a single crystal substrate. The inherently low sensitivity of NMR is overcome by using highly nuclear spin polarized ¹²⁹Xe that has been produced by optical pumping. A polarization of 0.8 is regularly achieved which is 10⁵ times the thermal (Boltzmann) polarization. The experiments are performed with a constant flux of xenon atoms impinging on the surface, typically 4 ML/s. The chemical shift (σ) of ¹²⁹Xe is highly sensitive to the Xe local environment. We measured profoundly different shifts for the Xe bulk, for the surface of the Xe bulk, and for Xe on CO/Ir(1 1 1). The growth of the bulk is seen in a phase transition like change of σ as a function of temperature at constant Xe flux. At temperatures where no bulk forms at a flux of 4 ML/s, the xenon exchange rate was measured by a spin inversion/recovery method. The exchange time of Xe is found to be 0.24 s at 63.4 K and 64.4 K and somewhat longer at 61.2 K. An analysis is given involving the desorption out of the second layer and fast mixing of first and second layer atoms at these temperatures.