Structures and stabilities of small lead oxide clusters PbmOn (m=1-4,n=1-2m)

The structures and stabilities of small lead oxide clusters PbmOn with m=1-4, n=1-2m are systematically studied using density functional theory. It is found that the lowest-energy structures of all these clusters can be obtained by the sequential oxidation of small "core" lead clusters. For Pb-rich clusters (oxygen-to-lead ratio<1), oxygen atoms favor bridge sites for Pb2On and Pb3On and surface sites for Pb4On. The lead-monoxide-like clusters (PbO)i (i=1-4) have great stability because of their significant dissociation energies and highest occupied molecular orbital-lowest unoccupied molecular orbital gaps. This suggests that they could be adopted as the building blocks of cluster-assembled materials. For O-rich clusters (oxygen-to-lead ratio>1), the grouping of oxygen atoms usually appears. It is found that the structures with a grouping of more than two oxygen atoms are unstable.     

氧化锆小团簇的结构和稳定性

利用密度泛函理论在广义梯度近似(GGA)和Perdew-Wang交换关联泛函条件下研究了小团簇Zr_mOn (1≤m≤5, 1≤n≤2m)的几何结构和稳定性. 结果表明: 所有团簇的最低能量结构可通过锆团簇的连续氧化获得, 一般情况下O原子占据在Zr团簇的桥位. (ZrO₂)₃和(ZrO₂)₅团簇的基态结构符合配位数规则和成键规律. 此外, 讨论了氧化锆团簇的分解通道和分解能, 值得指出的是在Zr原子数相同时Zr_mO_2m-1团簇(除了Zr₄O₇)存在最大的分解能.     

The bonding in boron and transition-metal cluster compounds

A method is described for constructing qualitatively the molecular orbitals of an approximately spherical cluster of boron or transition-metal atoms. The method gives a way of understanding the electron-counting rules for such clusters, the preference for deltahedral structures, the relationship between closo boranes on the one hand and nido and arachno boranes on the other, and Mingos' capping and condensation principles for transition-metal clusters.     

Elongation of planar boron clusters by hydrogenation: boron analogues of polyenes

Dihydrogenated boron clusters, H(2)B(n)(-) (n = 7-12), were produced and characterized using photoelectron spectroscopy and computational chemistry to have ladderlike structures terminated by a hydrogen atom on each end. The two rows of boron atoms in the dihydrides are bonded by delocalized three-, four-, or five-center σ and π bonds. The π bonding patterns in these boron nanoladders bear similarities to those in conjugated alkenes: H(2)B(7)(-), H(2)B(8), and H(2)B(9)(-), each with two π bonds, are similar to butadiene, while H(2)B(10)(2-), H(2)B(11)(-), and H(2)B(12), each with three π bonds, are analogous to 1,3,5-hexatriene. The boron cluster dihydrides can thus be considered as polyene analogues, or "polyboroenes". Long polyboroenes with conjugated π bonds (analogous to polyacetylenes), which may form a new class of molecular wires, should exist.     

Geometry and electronic properties of alkali metal (rubidium) doped boron clusters

Alkali metal-doped boron clusters have captured much attention because of their novel electronic properties and structural evolution. In the study of RbB_n^0/− (n = 2–12) clusters, the minimum global search of the potential energy surface and structure optimization at the level of PBE1PBE by using the CALYPSO method and Gaussian package coupled with DFT calculation; the geometrical structures and electronic properties are systematically investigated. At n = 8, the ground-state structures are composed of an Rb atom above B atoms, forming a structurally stable pagoda cone. By stability analysis and charge transfer calculation, the RbB₈⁻ cluster shows more stability. It found that s-p hybridization between Rb atom and B atoms as well as s-p hybridization between B atoms is one of the reasons for the outstanding stability exhibited in the RbB₈^0/− clusters by using DOS and HOMO–LUMO orbital contour maps. The chemical bonding of the RbB₈^0/− groups was analyzed by using the AdNDP method, and B atoms with larger numbers readily form multi-center chemical bonds with the Rb atom. From the results of the bonding analysis, the interaction between the Rb atom and B atoms strengthens the stability of the RbB₈^0/− clusters. It is hoped that this work provides a direction for experimental manipulation.     

14顶点闭合型碳硼烷异构体的结构和稳定性的密度泛函理论研究

采用密度泛函理论(DFT) B3LYP/6-31G(d)方法对14顶点闭合型碳硼烷异构体的几何结构进行优化, 分析了它们的稳定性、电荷分布以及前线分子轨道能级. 结果表明, C₂B₁₂H₁₄碳硼烷的9个异构体都有对应的稳定构型, 并基本保持了B₁₄H₁₄^2－的骨架构型; 除两个C原子取代轴顶点位置B原子的1,14-C₂B₁₂H₁₄外, 其稳定性均随着两个C原子之间距离的增大而增加, 但C原子取代高配位数的B原子不利于其构型的稳定性. 各异构体的负电荷主要分布在C原子上, 同时处于轴向位置的B原子也有部分负电荷, 它们可能成为反应的亲核活性中心. 异构体的HOMO能级的高低与其稳定性相对应, HOMO能级低的异构体稳定性好.     

Aromaticity of planar boron clusters confirmed

Low-energy boron clusters are characterized by two-dimensional geometry. Aromaticity of these planar boron clusters was established in terms of topological resonance energy (TRE). All planar boron clusters were found to be highly aromatic with large positive TREs even if they have 4n pi-electrons. Aromaticity must therefore be the origin of unusual planar or quasi-planar geometry. Thus, the aromaticity concept is as useful in boron chemistry as it is in general organic chemistry. It is evident that the Hückel 4n + 2 rule of aromaticity should not be applied to such polycyclic pi-systems. Some of the boron clusters are in the triplet electronic state to attain higher aromaticity. Multivalency and electron deficiency of boron atoms are responsible for lowering the energies of low-lying pi molecular orbitals and then for enhancing aromaticity. For polycyclic pi-systems, paratropicity does not always indicate antiaromaticity.     

A molecular interpretation of vitreous boron oxide dynamics

The mobility of vitreous boron oxide is studied by molecular dynamics simulation. A polarization model that incorporates induced dipoles arising both from charges and from other induced dipoles on atoms with nonzero polarizability is used to simulate boron oxide glass at various temperatures above the glass transition temperature. Particle mobility is investigated through the calculation of the self-intermediate scattering function and the mean-squared displacement. The calculations clearly reveal a two-step relaxation with a plateau at intermediate times for all investigated temperatures. With respect to atomic species, boron atoms are less mobile than oxygen atoms at all temperatures within the plateau region. Through analyzing particle trajectories, it is revealed that BO(3) groups move as one unit and follow each other in a stringlike manner. Three connected BO(3) groups comprise a six-membered boroxol ring, which is shown to move in a collective manner, requiring the simultaneous movement of all ring atoms. The boroxol ring is observed to be confined, or caged, during the plateau region, and jumps to a new location at longer times. This observation is linked to the concept of strong versus fragile glass formers and the potential energy landscape. In addition to the caging feature, an overshoot or dip occurs in the plateau regions of the mean-squared displacement and self-intermediate scattering functions respectively. These features are followed by a ringing pattern, previously associated with finite size effects in other strong glass formers, which persist for the duration of the plateau region. Both features are shown to be consistent with the bending of atomic "cages" from the plane of the boroxol ring, and arise due to the displacement of atoms from local minimum energy configurations.     

Comprehensive analysis of chemical bonding in boron clusters

We present a comprehensive analysis of chemical bonding in pure boron clusters. It is now established in joint experimental and theoretical studies that pure boron clusters are planar or quasi-planar at least up to twenty atoms. Their planarity or quasi-planarity was usually discussed in terms of pi-delocalization or pi-aromaticity. In the current article, we demonstrated that one cannot ignore sigma-electrons and that the presence of two-center two-electron (2c--2e) peripheral B--B bonds together with the globally delocalized sigma-electrons must be taken into consideration when the shape of pure boron cluster is discussed. The global aromaticity (or global antiaromaticity) can be assigned on the basis of the 4n+2 (or 4n) electron counting rule for either pi- or sigma-electrons in the planar structures. We showed that pure boron clusters could have double (sigma- and pi-) aromaticity (B3-, B4, B5+, B6(2+), B7+, B7-, B8, B(8)2-, B9-, B10, B11+, B12, and B13+), double (sigma- and pi-) antiaromaticity (B6(2-), B15), or conflicting aromaticity (B5-,sigma-antiaromatic and pi-aromatic and B14, sigma-aromatic and pi-antiaromatic). Appropriate geometric fit is also an essential factor, which determines the shape of the most stable structures. In all the boron clusters considered here, the peripheral atoms form planar cycles. Peripheral 2c--2e B--B bonds are built up from s to p hybrid atomic orbitals and this enforces the planarity of the cycle. If the given number of central atoms (1, 2, 3, or 4) can perfectly fit the central cavity then the overall structure is planar. Otherwise, central atoms come out of the plane of the cycle and the overall structure is quasi-planar.     

DFT Predictions on Structures and Stabilities of Eleven-vertex nido-and cioso-Heteroboranes

Based on the octadecahedron of eleven-vertex closo-borane,the eleven-vertex closo-heteroborane was suggested with nonmetallic atoms instead of the different nonequivalent boron,and the stabilities were predicted at G96PW91/6-31+G(3d,2p) level.The small heteroatoms,C,N,O,preferentially occupy vertex 2 with the absolutely lowest relative energy to form the high stabilization closo-heteroboranes.They cap four-membered rings to satisfy the geometrical demand of short B-Z bonds.The electron attractions from the vicinal boron atoms make the frameworks shrink.Differently,Si and Ge preferentially substitute for boron at vertex 1 with six tight B-Z bonds and form stabilized molecules.P,As,S,and Se tend to occupy vertex 4 and the optimized structures belong to the nido configurations,in contrast to high electronegative heteroatoms,S and Se transfer less negative charges to framework and the electropositive heteroatoms,Si and Ge transfer more negative charges to framework to form the delocalization structures.The HOMO-LUMO gaps show that most of predicted clusters possess chemical stabilities.The substitutions of heteroatoms for boron atoms in eleven-vertex closo-hcteroboranes are consistent with the topological charge stabilization rule proposed by Gimarc.     

On the structure and chemical bonding of tri-tungsten oxide clusters W3On- and W3On (n=7-10): W3O8 as a potential molecular model for O-deficient defect sites in tungsten oxides

Electronic and structural properties of a series of tri-tungsten oxide clusters, W3On- and W3On (n=7-10), are investigated using photoelectron spectroscopy and density functional theory (DFT) calculations. Both W 5d and O 2p detachment features are observed for n=7-9, whereas only detachment features from O 2p-type orbitals are observed for W3O10- at high electron binding energies (>7 eV). A large energy gap (approximately 3.4 eV) is observed for the stoichiometric W3O9 cluster, which already reaches the bulk value, suggesting that W3O9 can be viewed as the smallest molecular model for bulk WO3. DFT calculations are carried out to locate the most stable structures for both the anion and neutral clusters; time-dependent DFT method is used to predict the vertical detachment energies and to compare with the experimental data. It is shown that W3O9 possesses a D3h structure, in which each W atom is tetrahedrally coordinated with two bridging O atoms and two terminal O atoms. W3O8 and W3O7 can be viewed as removing one and two terminal O atoms from W3O9, respectively, whereas W3O1) can be viewed as replacing a terminal O in W3O9 by a peroxo O2 unit. We show that W3O8 contains a localized W4+ site, which can readily react with O2 to form the W3O10 clusters with a calculated O2 adsorption energy of -78 kcal/mol. It is suggested that the W3O8 cluster can be viewed as a molecular model for O-deficient site in tungsten oxides.     

Stabilization of boron clusters with classical fullerene structures by combined doping effect: a quantum chemical study

A combined approach (endohedral doping and exohedral environment) to stabilization of boron clusters with classical fullerene structures has been studied. The boron clusters with classical fullerene structures are stable when heteroatomic part of the complex (endohedral atom and exohedral environment) donates in total 18 electrons to the composite system, stability of which depends on the coordination capabilities and donor ability of the endohedral and surrounding atoms. The most effective stabilization is achieved in the case of the endohedral transition metals atoms, whereas the most effective environment is given by the lithium surrounding.

     

InAs管状团簇及单壁InAs纳米管的结构、稳定性和电子性质

采用密度泛函理论研究了InnAsn (n≤90)管状团簇以及单壁InAs纳米管的几何结构、稳定性和电子性质. 小团簇InnAsn (n=1-3)基态结构和电子性质的计算结果与已有报道相一致. 当n≥4时优化得到了一族稳定的管状团簇, 其结构基元(In原子与As原子交替排列的四元环和六元环结构)满足共同的衍化通式. 团簇的平均结合能表明横截面为八个原子的管状团簇稳定性最好. 管状团簇前线轨道随尺寸的变化规律有效地解释了一维稳定管状团簇的生长原因, 同时也说明了实验上之所以能合成InAs纳米管的微观机理. 此外, 研究结果表明通过管状团簇的有效组装可得到宽带隙的InAs半导体单壁纳米管.     

Relations Between Stabilities and Structures of Closo Borane Dianions

1 INTRODUCTION The syntheses of closo-B6H62–, closo-B10H102– and closo-B12H122– are the paradigms in boride chemistry, and they had been predicted theoretically before their preparations were reported[1]. Several decades passed, more and more boranes have been supposed with the theoretical methods[2~5] due to their unusual stabilities and applications in the field of synthesis chemistry. The closo-BnHn2–, a class of electron–defi- cient clusters, strongly tend to share common elec…     

Electronic structures and thermochemical properties of the small silicon-doped boron clusters B(n)Si (n=1-7) and their anions

We perform a systematic investigation on small silicon-doped boron clusters B(n)Si (n=1-7) in both neutral and anionic states using density functional (DFT) and coupled-cluster (CCSD(T)) theories. The global minima of these B(n)Si(0/-) clusters are characterized together with their growth mechanisms. The planar structures are dominant for small B(n)Si clusters with n≤5. The B(6)Si molecule represents a geometrical transition with a quasi-planar geometry, and the first 3D global minimum is found for the B(7)Si cluster. The small neutral B(n)Si clusters can be formed by substituting the single boron atom of B(n+1) by silicon. The Si atom prefers the external position of the skeleton and tends to form bonds with its two neighboring B atoms. The larger B(7)Si cluster is constructed by doping Si-atoms on the symmetry axis of the B(n) host, which leads to the bonding of the silicon to the ring boron atoms through a number of hyper-coordination. Calculations of the thermochemical properties of B(n)Si(0/-) clusters, such as binding energies (BE), heats of formation at 0 K (ΔH(f)(0)) and 298 K (ΔH(f)([298])), adiabatic (ADE) and vertical (VDE) detachment energies, and dissociation energies (D(e)), are performed using the high accuracy G4 and complete basis-set extrapolation (CCSD(T)/CBS) approaches. The differences of heats of formation (at 0 K) between the G4 and CBS approaches for the B(n)Si clusters vary in the range of 0.0-4.6 kcal mol(-1). The largest difference between two approaches for ADE values is 0.15 eV. Our theoretical predictions also indicate that the species B(2)Si, B(4)Si, B(3)Si(-) and B(7)Si(-) are systems with enhanced stability, exhibiting each a double (σ and π) aromaticity. B(5)Si(-) and B(6)Si are doubly antiaromatic (σ and π) with lower stability.     

Density functional theory study of BnC clusters

B_nC clusters (n = 3–10) were studied at the density functional theory (DFT) (B3LYP)/6‐311G** level of theory. The calculations predicted that the most stable configurations of the B_nC clusters are the (n + 1)‐membered cyclic structures. For boron–carbon clusters, the configurations containing greater numbers of three‐membered boron rings are more favorable, except for the B₇C and B₉C clusters. Through molecular orbital analysis of these B_nC clusters, we have concluded that π‐electron delocalization plays a crucial role in the stability of n + 1‐membered cyclic structures. In this paper, the relative stability of each cluster is discussed based on their single atomic‐binding energies. The capability of clusters to obtain or lose an electron was also discussed, based on their vertical electron detachment energies (VDEs), adiabatic electron detachment energies (ADEs), vertical electron affinities (VEAs) and adiabatic electron affinities (AEAs). Copyright © 2011 John Wiley & Sons, Ltd.     

Hypercoordinated carbon in C-doped boron fullerenes: a quantum chemical study

The structures and stability of C-doped boron fullerenes with the three-dimensional arrangement of non-classical pentacoordinated quasi-flat carbon centers were studied using the density functional theory (DFT) B3LYP/6-311+G(d,p) method. The doping with carbon atoms in apical positions above the five-membered rings stabilizes the spherical boron fullerene forms due to multicenter interactions of p_z-orbitals of the carbons and adjacent boron atoms. Increasing in the size of the fullerene cluster is accompanied by change in the bonding pattern and by flattening of the hypercoordinated carbon centers. Endohedral metal atoms significantly affect on the structure and stability of the fullerene systems with hypercoordinated carbon centers.     

Theoretical investigation of clusters of phosphorus and arsenic: fascination and temptation of high symmetries

We present a theoretical study of the energetic and thermodynamic stability of selected phosphorus and arsenic clusters containing 18 to 168 atoms. For this purpose we employ MP2 as well as DFT functionals BP86 and B3LYP with extended basis sets. All procedures predict the family of one-dimensional polymers X18+12n, each with 2n-1 isomers of virtually identical energy, to be more stable than other structures investigated so far. Furthermore, islands of stability result for ring-shaped clusters X24n with Dnd symmetry for n=4 (only for arsenic), 5, 6, and 7. Phosphorus and arsenic show otherwise a very similar behavior. An investigation of basis set effects shows that a doubly polarized triple zeta valence basis (TZVPP) is both necessary and sufficient. In comparison to the reliable spin component scaled MP2 (SCS-MP2) procedure, DFT methods underestimate and MP2 overestimates the stability of larger clusters; the discrepancy increases with the number of atoms. The addition of a long-range dispersion correction to B3LYP energies does not rectify the shortcomings of DFT in comparison with SCS-MP2.     

Theoretical study of selenium and tellurium impurities in (ZnO)6 clusters using DFT and TDDFT

Zinc oxide (ZnO) nanostructures have attracted much interest due to their potential applications in various fields including optoelectronics, glass industries, and solar cells. These compounds hold the promise of creating new materials that can advance energy technologies. In this work, a series of (ZnO)₆ clusters with selenium and tellurium applied as substitutional impurities has been studied. The investigated structures have been produced through the doping of (ZnO)₆ clusters by replacing an oxygen atom with a selenium or a tellurium atom at each time. The ground state geometric parameters of (ZnO)₆ structures, containing selenium or tellurium atoms as substitutional impurities, were calculated using density functional theory (DFT) with B3LYP and LanL2DZ basis set. Excited state energies and absorption wavelengths were computed using time‐dependent‐DFT (TDDFT). For the calculation of emission wavelengths, Hartree–Fock configuration interaction singles (HF/CIS) has been used in order to perform the excited state geometry optimization. This work led to some important results that can be helpful for developing novel THz sensitive materials and imaging detectors that may be an alternative to x‐rays detectors for radiology as well as for the development of solar cells and electroluminescent diodes. Zinc oxide (ZnO) nanostructures have attracted growing interest due to their potential applications in many technological fields, including optoelectronics, the glass industry, and energy. The presence of impurities, in particular selenium and tellurium, in ZnO‐based clusters can affect their structural and spectroscopic properties. Some of these doped nanostructures have favorable Terahertz emission characteristics that make them good candidates for applications in biology and medicine.     

Tight binding molecular dynamics studies of GamAsn and AlmAsn clusters

The parametrized tight binding molecular dynamics method is used to study the structures and properties of small GaAs and AlAs clusters. Relative stabilities and ground state properties of GaAs clusters consisting of up to 4 atoms agree with those obtained in previous studies. Similar properties are found for small AlAs clusters. The present study of microclusters of both GaAs and AlAs revealed that the icosahedral structure is unstable for the binary clusters. Stability of such clusters increases monatomically as a function of As to Ga or As to Al ratio.