溶液法制备柔性压阻式传感器的研究进展

柔性压阻式传感器具有结构简单、易于制备、检测范围广等优势, 在可穿戴电子器件领域中扮演着非常重要的角色. 在制备柔性压阻式传感器的众多方法中, 溶液法由于操作简单、反应条件温和、材料的适用性广泛、易于规模化制备等优势, 成为极具发展前景的制备工艺. 在此基础上, 如何进一步提高柔性压阻式传感器的力学与电学性能也成为研究者们更加关注的话题. 另外, 制备图案化、微型化、规模化的传感器阵列为柔性压阻式传感器的应用范围拓展了新的道路. 本综述首先介绍了柔性压阻式传感器的工作原理与性能指标, 同时讨论了其性能指标对传感器在实际应用中的影响. 随后, 简单介绍了其构成材料, 并通过梳理近年来溶液法制备柔性传感器的研究成果, 选取了几种典型的溶液法制备方法进行重点介绍, 指出其具备的优势及目前存在的问题. 最后, 对溶液法制备柔性传感器的发展方向进行总结与展望.     

钙钛矿型Gd~2CuO~4复合氧化物薄膜的制备

采用非晶态多核配合物作为前驱体的方法在单晶硅表面成功地制备了钙钛矿型的复合金属氧化物Gd~2CuO~4薄膜,XPS研究表明所制备出的薄膜由Gd~2CuO~4复合金属氧化物组成。XRD研究表明经600℃热处理形成的复合氧化物薄膜以钙钛矿型晶相结构存在,也进一步证实了所制备出的薄膜是Gd~2CuO~4复合金属氧化物,其晶粒大小在20nm左右。俄歇电子能谱的深度剖析表明形成的薄膜组成均匀,在界面上有一定程度的扩散作用。运用AES揭示了Gd~2CuO~4薄膜的厚度与前驱体溶液中前驱体的质量分数以及添加剂的影响规律。SEM研究表明前驱体配合物的质量分数越低,形成的薄膜越薄,其表面织构越均匀。当前驱体的质量分数超过一定值后,形成的薄膜具有很多策微裂纹。添加剂聚乙二醇对形成的薄膜厚度没有明显的影响,但可以明显改善薄膜的织构,使复合氧化物在衬底上分散得更均匀,抑制微裂纹的产生。     

有机和杂化阻变材料与器件

阻变存储器具有功耗低、微缩性好、可大规模三维堆积、与互补金属氧化物半导体(CMOS)工艺兼容等诸多优势,可以满足高性能信息存储的关键要求。采用有机及杂化阻变材料作为存储介质构建器件,通过分子设计及合成策略不仅可实现器件的轻量化和柔性集成,还可以灵活地调控分子的电学特征以及器件的存储性能。本文全面综述了有机及杂化阻变材料与器件的最新进展,特别关注它们在电学性能调控和柔性存储性能方面的设计原则,并对有机及杂化阻变材料与柔性存储器件的当前挑战及未来发展前景进行了讨论。     

柠檬酸法制备复氧化物材料的配位结构化学

柠檬酸法在复氧化物材料制备中占有重要地位,它具有分散均匀、制备温度低、产物粒径小的特点.以特定组成和结构的柠檬酸络合物为前驱体,直接分解可得到纯度较高的复氧化物,从中可以了解复氧化物的形成过程.本文从配位结构化学的角度,评述以钛、钒、钼和钨柠檬酸络合物为前驱体制备复氧化物材料的研究进展.     

新型Ti3C2 MXene的化学制备及基于MXene忆阻器特性与机理

阻变器件是一种微电子器件,具有阻值可在两个甚至两个以上的阻态之间重复变化的特点。忆阻器作为新型的阻变器件,具有可连续变化的丰富阻态。近年来因其具备简单的二端结构、高集成度以及低工作电压等特性,在新型非易失性存储以及构建神经形态系统等方面被广泛研究。但其在实现应用的过程中仍存在着稳定性较差等问题。近期一些工作证明了二维材料如氧化石墨烯在优化忆阻器性能方面具备良好的应用潜力。MXene是一种具备类似石墨烯结构的新型二维过渡金属碳/氮化物,因其具备二维层状结构显现出特殊的力学以及电学特性,有望应用于忆阻器中以提高器件的电学性能。在本文中,我们通过化学湿法刻蚀制备了Ti₃C₂粉末,通过旋涂工艺在忆阻器结构中引入Ti₃C₂薄膜。Ti₃C₂ MXene与SiO₂同时作为忆阻器阻变层,制备了Cu/Ti₃C₂/SiO₂/W结构的忆阻器,并且对其相关电学特性进行了探究。在该器件上,通过实验测得忆阻器典型的开关特性曲线并在双向直流电压下针对高、低阻态的可重复性、稳定性进行了实验。结果表明该器件能够在100个扫描循环过程中保持稳定的高、低阻态达到10⁴ s以上。同时,该器件状态能够受脉冲电压调节,实现突触间典型的双脉冲易化行为。实验结果表明基于Ti₃C₂ MXene的忆阻器将有望应用于构建新兴存储设备以及人工神经形态系统。     

Cu12Sb4S13量子点的光照增强阻变性能

采用热注入法制备了粒径为7.9 nm的Cu₁₂Sb₄S₁₃量子点（CAS QDs）,并利用旋涂法在室温下制备了结构为FTO/CAS QDs/Au（其中FTO为导电玻璃）的阻变存储器（RRAM）.在光照条件下,该三明治结构的RRAM呈现典型的双极性阻变开关特征,具有-0.38 V/0.42 V的低工作电压和10⁵的高阻变开关比,并表现出优异的数据保持性和耐久性.在持续工作1.4×10⁶ s和经过10⁴次快速读取后,器件阻变性能变化率小于0.1%.在光照和电场共同作用下,S^2-导电通道的形成与破坏和FTO/CAS QDs界面肖特基势垒高度的调制是FTO/CAS QDs/Au在高阻态与低阻态之间转变的原因.     

三维多孔锌钨氧化物异质结的制备、组分调控与光催化性能

采用真空冷冻干燥技术, 通过调控前驱体溶液的组成, 实现了锌钨氧化物异质结材料的可控制备. 前驱物中高分子的引入使煅烧后的氧化物材料很好地保持了三维连通的多孔结构. 光催化实验结果表明, 获得的系列材料均能够实现对罗丹明B的脱色降解, 并表现出组分依赖的光催化活性. 氧化锌/钨酸锌三维多孔异质结材料相比于其它样品具有更高的光催化活性, 可在180 min内将罗丹明B完全脱色.     

硅基聚合物前驱体转化陶瓷微观结构研究进展

聚合物前驱体转化法使得陶瓷材料的制备实现了可分子设计和可聚合物工艺加工,在陶瓷基复合材料、陶瓷纤维、功能涂层、特种胶粘剂等方面具有重要应用价值.不同于传统粉末烧结工艺,该方法涉及有机聚合物至无机陶瓷的转化过程,因此,聚合物前驱体的分子结构以及陶瓷化工艺对所制备陶瓷材料的微观结构和功能特性具有直接影响.本文综述了基于聚合...     

高性能陶瓷聚合物前驱体研究新进展

含硅聚合物是制备高性能陶瓷的重要前驱体。聚合物前驱体热解转化法在非氧化物陶瓷及其复合材料制备方面具有特别优势。本文主要介绍了含不饱和基团聚硅碳烷、线性和超支化聚硼硅氮烷、含过渡金属聚合物等几类前驱体的结构设计和合成新方法,以及其在电磁波吸收材料、锂电池负极材料、特种陶瓷结构3D打印成型方面应用的新进展。     

一步固相法合成锂离子电池高镍层状正极材料

高镍层状正极材料因其比容量高进而满足电动汽车的续航要求,是锂离子电池中占主导地位的正极材料之一。通常,商业化的高镍层状氧化物是由共沉淀前驱体合成的,而在共沉淀过程中需要对温度、 pH、 搅拌速率等条件的精确控制,以确保镍、钴和锰等阳离子的原子级混合。本文采用了简单的一步固相法成功合成了超高镍含量的层状氧化物材料。通过使用与目标产物具有相似层状结构的前驱体氢氧化镍,成功合成了LiNiO₂和LiNi_xCo_yO₂ (x = 0.85, 0.9, 0.95; x + y = 1),其电化学性能可与共沉淀前驱体制备的高镍材料相媲美。通过XRD和XPS测试证实了Co掺杂到LiNiO₂中,并抑制了高镍氧化物中的锂镍混排。掺杂剂Co在提高高镍材料的放电容量、倍率性能和循环性能方面具有明显的优势。一步固相法为未来制备下一代高性能超高镍锂离子正极材料提供了一种简单有效制备方法。     

Flexible Metal Oxide Semiconductor Devices Made by Solution Methods

For the fabrication of next-generation flexible metal oxide devices, solution-based methods are considered as a promising approach because of their potential advantages, such as high-throughput, large-area scalability, low-cost processing, and easy control over the chemical composition. However, to obtain certain levels of electrical performance, a high process temperature is essential, which can significantly limit its application in flexible electronics. Therefore, this article discusses recent research conducted on developing low-temperature, solution-processed, flexible, metal oxide semiconductor devices, from a single thin-film transistor device to fully integrated circuits and systems. The main challenges of solution-processed metal oxide semiconductors are introduced. Recent advances in materials, processes, and semiconductor structures are then presented, followed by recent advances in electronic circuits and systems based on these semiconductors, including emerging flexible energy-harvesting devices for self-powered systems that integrate displays, sensors, data-storage units, and information processing functions.     

New synthetic approach to yttrium hydroxoacetates, structural characterization, and use as a precursor for coated conductors

A novel synthetic approach is given for the preparation of a metal-organic lanthanide sol-gel precursor solution and its application for the production of coated conductors. Besides all other problems concerning the technical process itself, the key to a successful deposition of oxide layers is the choice of the precursor solution and the understanding of the mechanism of deposition. Moreover, the isolation and characterization of the species involved in the reaction is very important. Regarding the complex process occurring during the formation of the surface layer, it is obvious that the best choice should have a compound already containing the final composition of the layer. Two compounds of composition [Y(OAc)3(H2O)2]2 and [Y(OAc)3]2(H2O) were isolated from their precursor solution and characterized by X-ray structural analysis. A short outlook will give an insight into the possible bonding mechanisms of the surface layer. These experiments were made with the mixed metal-oxide system yttrium-stabilized zirconium oxide, which is widely used as a substrate for superconducting oxides. A study of the structure of hydrated yttrium acetates, by single-crystal X-ray diffraction, infrared spectra, and elemental analysis demonstrates that there are two separate structures for hydrated yttrium acetates, which play a role as an intermediate in the building of ceramic oxide layers for coated conductors.     

Preparation and application of poly(alkoxytitanate) as a TiO2 precursor with high storage stability

Titanium dioxide is a basic material of our daily life. Because of its favourable properties, such as harmlessness, chemical stability, photocatalytic activity, or whiteness it is increasingly applied in both micro and nano particles and thin films and coating. One of the available procedures for film forming is the sol–gel technology, an inexpensive low temperature process with wide possibilities to vary film properties by changing the composition of the precursor solution or other parameters. In the paper a new precursor polymer for TiO₂ film-preparation with high storage and processing stabilities is introduced and applied in thin film forming. The new precursor poly(alkoxytitanate) is prepared by a one step, water-free sol–gel method. A smooth TiO₂ film can be prepared using this precursor by spin-coating followed by H₂-plasma curing. Comparing to a common precursor such as Ti(O–iPr)₄, this precursor has a good solubility in different solvents and a much higher storage stability. The easy to modify precursor end groups enable the tailoring of properties regarding to hydrolysis to both TiO₂ particles and films.     

Improving breakdown strength and energy storage efficiency of poly(vinylidene fluoride-co-chlorotrifluoroethylene) and polyurea blend films by double layer structure design

All-organic composites are widely used in energy storage application due to the high breakdown strength performance, but the improvement of energy storage was limited by the relatively low dielectric constant. Therefore, to satisfy the high demands of dielectric materials, energy storage properties of polymer composites should be further enhanced. In this article, poly(vinylidene fluoride-co-chlorotrifluoroethylene) (P(VDF-CTFE)) and polyurea (PUA), which are known as high dielectric ferroelectric material and linearly high energy storage efficiency material respectively, are composited through double layer (DL) casting method for the first time. The properties of DL structured composite film is contrasted with solution blending structure especially in energy storage efficiency, and the results demonstrate that DL structure design can make great use of advantages of two materials and also can avoid the influence of phase separation between P(VDF-CTFE) and PUA efficiently. Moreover, high breakdown strength (6180 kV/cm) and high energy storage efficiency (77%) of DL composites can be realized simultaneously by incorporating PUA as an insulating layer, and the mechanism is discussed in detail. This work provides an effective route to improve the energy storage properties of polymer dielectric materials and shows great application potential.     

Carbon Transition‐metal Oxide Electrodes: Understanding the Role of Surface Engineering for High Energy Density Supercapacitors

Supercapacitors store electrical energy by ion adsorption at the interface of the electrode‐electrolyte (electric double layer capacitance, EDLC) or through faradaic process involving direct transfer of electrons via oxidation/reduction reactions at one electrode to the other (pseudocapacitance). The present minireview describes the recent developments and progress of carbon‐transition metal oxides (C‐TMO) hybrid materials that show great promise as an efficient electrode towards supercapacitors among various material types. The review describes the synthetic methods and electrode preparation techniques along with the changes in the physical and chemical properties of each component in the hybrid materials. The critical factors in deriving both EDLC and pseudocapacitance storage mechanisms are also identified in the hope of pointing to the successful hybrid design principles. For example, a robust carbon‐metal oxide interaction was identified as most important in facilitating the charge transfer process and activating high energy storage mechanism, and thus methodologies to establish a strong carbon‐metal oxide contact are discussed. Finally, this article concludes with suggestions for the future development of the fabrication of high‐performance C‐TMO hybrid supercapacitor electrodes.     

SiO2-Coated ZnO Nanoflakes Decorated with Ag Nanoparticles for Photocatalytic Water Oxidation

Many strategies have been adopted to improve the photoinduced features of zinc oxide nanostructures for different application fields. In this work, zinc oxide has been synthesised and decorated by plasmonic metal nanoparticles to enhance its photocatalytic activity in the visible range. Furthermore, an insulating layer of SiO₂ has been grown between the surface of zinc oxide nanoflakes and silver nanoparticles. A synthetic procedure that allows the accurate modulation of the insulating layer thickness in the range 5–40 nm has been developed. Evidences highlight the crucial role of the SiO₂ layer in dramatically increasing photocatalytic water oxidation promoted by the nanostructure under both UV and visible illumination. An ideal thickness value of about 10 nm has been demonstrated to guarantee the plasmon-induced resonance energy-transfer process and to quench the Förster resonance energy-transfer mechanism; thus, optimising the local surface plasmon resonance effect and water oxidation properties.     

Comments on the processing of the niobium component for chemical solution derived niobium oxide-based thin-films

The impact of chemical precursor modification on the electronic properties of chemical solution deposition derived niobium oxide thin-films has been evaluated. It has been found that the application of certain chemical modifications is mandatory in order to obtain electrically insulating thin-films at low processing temperatures. It is emphasized that the devised optimal way of processing for the niobium component is widely contrary to the solution based processing of potassium sodium niobate films reported so far. Regarding the physical nature of the observed instabilities, the phase evolution of solution processed niobium oxide films has been studied. It has been detected that the organic fraction in the precursor solution is stable up to high temperatures and as a result, the low temperature crystalline TT-phase of niobium oxide is preserved up to unusually high processing temperatures. The inherent structural distortion of the unit cells may present a new defect mechanism that has to be further investigated regarding the inferior ferroelectric properties of chemical solution derived potassium sodium niobate thin-films, which are often observed.     

Investigation of thermal,mechanical, and electrical properties of novel polyurethanes/high molecular weight polybenzoxazine blends

In order to prepare tough polyurethane (PU) electrical insulator with improved thermal stability and electrical insulating properties, high molecular weight polybenzoxazine precursor was mixed and co‐cured with crosslinkable urethane prepolymers. Polybenzoxazine precursor (Bmda) was synthesized from reaction of bisphenol‐A, methylenedianiline, and paraformaldehyde. Epoxy‐terminated polyurethanes (EPU1‐4) were prepared by the reaction of glycidol with NCO‐terminated urethane oligomers. The oligomers were prepared from different molecular weight versions of polycaprolactone polyol (CAPA) and hexamethylene diisocyanate. Blends were prepared through thermal treatment of equal weights of two precursors dissolved in chloroform. Optimum curing condition was determined by DSC and DMTA analysis and measurement of the gel content for cured samples. Viscoelastic, thermal, mechanical, and electrical properties of cured samples were investigated and structure–property relationship was established. Copyright © 2008 John Wiley & Sons, Ltd.     

Properties of ZnO nanocrystals prepared by radiation method

Zinc oxide nanoparticles were prepared by irradiation of aqueous solutions containing zinc(II) ions, propan-2-ol, polyvinyl alcohol, and hydrogen peroxide. Zinc oxide was found in solid phase either directly after irradiation, or after additional heat treatment. Various physicochemical parameters, including scintillation properties of prepared materials, were studied. After decomposition of impurities and annealing of oxygen vacancies, the samples showed intensive emission in visible spectral range and well-shaped exciton luminescence at 390–400 nm. The best scintillating properties had zinc oxide prepared from aqueous solutions containing zinc formate as initial precursor and hydrogen peroxide. Size of the crystalline particles ranged from tens to hundreds nm, depending on type of irradiated solution and post-irradiation thermal treatment.     

Device model for poly(o‐methoxyaniline) field‐effect transistor

We present a detailed study of the electric mechanism of a thin poly(o‐methoxyaniline) (POMA) field‐effect transistor. The device was prepared using Al‐Si/SiO₂/(interdigitated gold lines array)/POMA structure as the gate electrode, insulating layer, source‐drain electrodes, and active layer, respectively. A model is presented for the electrical characteristics of such a device that encompasses the disordered properties of the POMA, the source‐drain electrical‐field dependence of hole mobility, and the carrier and mobility gradients in directions perpendicular to the polymer–oxide interface. The fittings of source‐drain current versus source‐drain voltage, having as parameters the gate voltage, is in good agreement with the experimental data, and the dependence of both the carrier saturation velocity and of the carrier mobility with the gate voltage are obtained. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 43: 74–78, 2005