Surface microstructure and morphology study of thin films produced from volatile fluorine-containing rare-earth β-diketonate complexes and their adducts

We present the results of a surface microstructure and morphology study of thin films produced from volatile fluorine-containing rare-earth β-diketonate complexes and their adducts. Films 0.2–0.4 μm in thickness were synthesized in vacuum by means of thermal deposition of the parent substances at a pressure of 5 × 10^?4?1 × 10^?3 Pa and a deposition rate of 3 × 10^?3 μm s^?1 (for NaNd(FOD)₄ films, the deposition rate was 8 × 10^?2 μm s^?1). The microstructure of films depends on the deposition conditions. The films of [NaNd(PTFA)₄] and [NaNd(FOD)₄] complexes and Ln(PTFA)₃ · S₁ adducts have an amorphous structure. The [NaNd(PTFA)₄(Phen)] and Nd(PTFA)₃ · S₂ films are characterized by a more ordered polycrystalline structure with the grain size ranging from 0.2 to 1.5 μm.     

Use of Phosphoantimonic Acid for Arsenic Determination by Activation Analysi

A methed was elaborated to determine arsenic amount in skin samples by neutron activation analysis and high-resolution gamma spectrometry including sample preparation after mineralization by sorption on silicagel saturated with phosphoantimonic acid. The samples were irradiated in the VVR-S reactor core in a flux of 10¹³ neutrons · cm^?2 · s^?1, mineralized with a mixture of nitric and sulphuric acids, the gamma spectrum was measured after passing through an ion-exchanger containing 0.5 mol P₂O₅ to 1 mol Sb₂O₅ (SP-2) by a gamma-spectroscopy system PLURIMAT 20 with a Ge(Li) detector, and the ⁷⁶As photopeak of E_γ = 0.559 MeV was measured. The values of the results obtained varied in the range of (4?5 )× 10^?1 ppm arsenic. The sensitivity of the proposed determination method is l×10^?3 μg arsenic.     

Investigations on the effect of argon ion bombardment on the structural and optical properties of crystalline gallium antimonide

The effects of bombardment of 250 keV argon ions in n-type GaSb at fluences 2×10¹⁵ and 5×10¹⁵ ions cm^?2 were investigated by high-resolution X-ray diffraction (HRXRD), Fourier transform infrared (FTIR) and scanning electron microscopy (SEM). HRXRD studies revealed the presence of radiation-damaged layer (strained) peak in addition to the substrate peak. The variation in the lattice constant indicates the strain in the bombarded region. The out-of-plane (?_⊥) and in-plane strains (?_|) determined from the profiles of several symmetric and asymmetric Bragg reflections, respectively, were found to change with the ion fluence. Simulations of XRD patterns using dynamical theory of X-ray scattering (single-layer model) for the damaged layer yielded good fits to the recorded profiles. FTIR transmission studies showed that the optical density (α·d) of GaSb bombarded with different fluences increases near the band edge with increase in ion fluence, indicating the increase in the defect concentration. The density of the defects in the samples bombarded with different fluences was in the range of 3.20×10²¹–3.80×10²¹ cm^?3. The tailing energy estimated from the transmission spectra was found to change from 12.0 to 58.0 meV with increasing ion fluences, indicating the decrease of crystallinity at higher fluences. SEM micrographs showed the swelling of the bombarded surface of about 0.33 μm for the fluence of 2×10¹⁵ ions cm^?2, which increased to 0.57 μm for the fluence of 5×10¹⁵ ions cm^?2.     

Growth of high quality non-linear optical crystal zinc germanium phosphide for Mid-infrared optical parametric oscillator

ZnGeP₂ single crystals were grown from Vertical Bridgman method. High-quality near-stoichiometric ZnGeP₂ single crystals were obtained in the diameter of 30 mm and length of 120 mm. The results showed that after thermal annealing of the crystals the optical absorption coefficient was below 0.03 cm^?1 at 2.05 μm, and ～0.02 cm^?1 at 3–8 μm. The low absorption loss ZnGeP₂ samples with dimension of 6 × 6 × 18 mm³ were cut from the annealed ingots for 3–5 μm optical parametric oscillation (OPO) experiments. For OPO experiment, we obtained up to 8.7 W output in the 3–5 μm wavelength range (with signal of 3.80 μm and idler of 4.45 μm, respectively) pumped by a 16.3 W 2.05 μm Tm,Ho:GdVO₄ laser at pulse repetition rate of 10 kHz, which corresponded to a conversion efficiency of 53.4% and slope efficiency of 64.8%, respectively.     

Production ofμ − e + pairs in neutrino interactions in the SKAT bubble chamber experiment

The production of μe-pairs is studied in interactions of neutrinos with nuclei of heavy freon in the SKAT bubble chamber experiment. A rate of μ^? e ⁺ to charged current interactions above the charm threshold of \(R^{\mu ^ - e^ + } = (4.6 \pm 1.2) \cdot 10^{ - 3} \) is found. The properties of the observed μ^? e ⁺ events can be well described by assuming them to originate from the semileptonic decay of quasielastic produced charmed baryonsΛ _c and inclusive charmedD-meson production. The rates for these reactions are found to be (6.7±3.5)×10^?2 and (2.5±0.9)×10^?2, respectively. A total charmed particle production rate of (9.2±3.6)×10^?2 is calculated.     

A highly luminescent complexes of Eu(III) and Tb(III) with norfloxacin and gatifloxacin doped in sol–gel matrix: A comparable approach of using silica doped Tb(III) and Eu(III) as optical sensor

Highly luminescent complexes of Eu and Tb ions with norfloxacin (NFLX) and gatifloxacin (GFLX) were prepared in sol–gel matrix. The red and green emissions of Eu and Tb ions were obtained by the energy transfer from the triplet state of (NFLX) and (GFLX) to the excited emitting states (⁵D₀ and ⁵D₄) of Eu and Tb, respectively. The intensity of the electric field emission bands (⁵D₀→⁷F₂, 617 nm and ⁵D₄→⁷F₅, 545 nm) of Eu and Tb ions were proportional to the concentration of (NFLX at pH 6.0) and (GFLX at pH 3.5) in acetonitrile with excitation wavelengths (λ_ex) (340 and 395) and (370 and 350 nm) for Eu and Tb ions, respectively. The monitored luminescence intensity of the system showed a good linear relationship with the concentration of NFLX within a range of 5×10^?9–5.8×10^?6 and 5×10^?8–1.0×10^?6 mol L^?1 with a correlation coefficient of 0.990, and for GFLX within a range of 2.4×10^?9–3.2×10^?5 and 5×10^?8–8.0×10^?6 mol L^?1 with a correlation coefficient of 0.995. The detection limit (LOD) was determined as 3.0×10^?9 and 1.0×10^?8 mol L^?1 for NFLX and 1.6×10^?10 and 2.0×10^?8mol L^?1 for GFLX. The limit of quantification (LOQ) is 9×10^?9 and 3.0×10^?8 and 4.8×10^?10 and 6.0×10^?8 in case of Eu and Tb, respectively.     

New measurement of the elastic scattering cross section of μd muonic atoms off deuterons

We have measured the elastic scattering cross section for the process μd + d → μd + d in ultrapure gaseous deuterium at 14 atm and at room temperature. The results is σ_dd = (8 ± 2) × 10^?20 cm².     

Nonlinear optical characteristics of carbon disulfide

The nonlinear refractive index γ of CS₂ is studied using laser pulses of various durations (from 110 fs to 75 ns). It is found that γ increases with increasing pulse duration within the picosecond region (from (3 ± 0.6) × 10^?15 cm² W^?1 at 110 fs to (3.5 ± 0.7) × 10^?14 cm² W^?1 at 75 ns) due to orientational nonlinearities. Variations in the sign of γ caused by the thermal effect at different pulse durations and repetition rates are analyzed. It is demonstrated that the fast electronic component, the component associated with molecular processes, causing positive nonlinear refraction, and the acoustic component, responsible for negative nonlinear refraction, manifest themselves simultaneously. The results of a study of the nonlinear absorption of carbon disulfide are presented. The two-and three-photon absorption coefficients of CS₂ are determined to be (5 ± 1.5) × 10^?11 cm W^?1 and (2.8 ± 0.8) × 10^?23 cm³ W^?2, respectively.     

Electrical transport measurements in a quasi-onedimensional semiconductor ZrS3

We have used the technique of chemical vapour transport to prepare needle shaped single crystal of ZrS₃. Results of the measurements of d.c. resistivity. Hall coefficient and thermoelectric power of the temperature range 100–500 K are reported. All the samples exhibited semiconducting behaviour with a room temperature resistivity of about 15 Ω-cm and an activation energy of 0.20±0.02 eV. Room temperature thermoelectric power is -850 μVK^?1 and the dominant carriers are electrons. The thermoelectric power varies as (1/T), a behaviour associated with a typical semiconductor. Mobility at low temperatures is limited by ionized impurity scattering and is given by μ₁ = 6.5 × 10^?2T^3/2 cm²V^7-1 sec^?1. At high temperatures, phonon scattering is dominant and the mobility is given by μ₂ = 1.35 × 10⁺⁵T^?32 cm²V^?1 sec^?1.     

Charge carrier mobility in crystals of the Pb<Subscript>0.67</Subscript>Cd<Subscript>0.33</Subscript>F<Subscript>2</Subscript> superionic conductor

The frequency (ν = 10^?1–10⁷ Hz) dependences σ(ν) of the conductivity of single crystals of the Pb_0.67Cd_0.33F₂ superionic conductor with the fluorite-type structure (CaF₂) in the temperature range of 132–395 K have been studied. The dependences σ(ν) have been discussed in the framework of the hopping relaxation of ionic carriers, which are mobile anions F^?. From experimental curves σ(ν), the direct-current (dc) conductivity σ_dc and the average charge carrier hopping frequency ν_h have been determined. This has made it possible to calculate the charge carrier mobility μ_mob and charge carrier concentration n _mob in these crystals. At room temperature (293 K), the electrical parameters are σ_dc = 1.6 × 10^?4 S/cm, ν_h = 2.7 × 10⁷ Hz, μ_mob = 2.0 × 10^?7 cm²/(s V), and n _mob = 5.1 × 10²¹ cm^?3.     

New measurement of (g−2) of the Muon

The g-factor anomaly, a≡(g?2)/2, has been measured for μ⁺ in the new Muon Storage Ring at CERN. The result is a = (1 165 895 ± 27) × 10^?9. This is (13 ± 29) × 10^?9 below the theoretical value which includes sixth-order QED terms and a hadronic contribution of (73 ± 10) × 10^?9.     

The nonlinear optical coefficient,phasematching, and optical damage in the chalcopyrite AgGaSe2

We have made a direct measurement of the absolute nonlinear coefficient for AgGaSe₂ by phasematched second harmonic generation. The measured value is d₃₆ = (3.24 ± 0.50) × 10^?11 m/V. For CO and Co₂ lasers the observed phasematching angles for second harmonic generation and frequency mixing are within one degree of the values calculated by fitting the reported index of refraction data to Sellmeier equations. At 1.06 μm the optical damage threshold depends on the number of incident laser pulses. For 1000 pulses damage occurs at 11 MW/cm². The samples were cut from crack-free single crystal boules with absorption coefficient smaller than 0.1 cm^? at 10.6 μm.     

克里奇中间体CH2OO与CF3CF=CF2反应的动力学研究

本文使用OH激光诱导荧光方法研究了结构最简单的克里奇中间体CH₂OO和CF₃CF=CF₂的反应动力学. 在压强为10 Torr条件下,测量了温度在283,298,308和318 K的反应速率常数,分别为(1.45±0.14)×10^-13,(1.18±0.11)×10^-13,(1.11±0.08)×10^-13和(1.04±0.08)×10^-13 cm³·molecule^-1·s^-1. 根据阿伦尼乌斯方程,获得该反应的活化能为(-1.66±0.21) kcal/mol. 在6.3∽70 torr压力范围内,未观察到该反应的速率常数存在压力相关.     

Determination of Montelukast in Plasma Using β − Cyclodextrins Coated on CoFe<Subscript>2</Subscript>O<Subscript>4</Subscript> Magnetic Nanoparticles in Luminol–H<Subscript>2</Subscript>O<Subscript>2</Subscript> Chemiluminescence System Optimized by Doehlert Design

A novel chemiluminescence method using β ? cyclodextrins coated on CoFe₂O₄ magnetic nanoparticles is proposed for the chemiluminometric determination of montelukast in plasma. The effect of coated β ? cyclodexterinon CoFe₂O₄ magnetic nanoparticles in the chemiluminescence of luminol–H₂O₂ system was investigated. It was found that β ? cyclodexterin coated on CoFe₂O₄ magnetic nanoparticles could greatly enhance the chemiluminescence of the luminol–H₂O₂ system. Doehlert design was applied in order to optimize the number of experiments to be carried out to ascertain the possible interactions between the parameters and their effects on the chemiluminescence emission intensity. This design was selected because the levels of each variable may vary in a very efficient way with few experiments. Doehlert design and response surface methodology have been employed for optimization pH and concentrations of the components. Results showed under the optimized experimental conditions, the relative CL intensity (ΔI) is increased linearly in the concentration range of 0.003–0.586 μgml^?1 of montelukast with limit of detection (LOD) 1.09 × 10^?4 μgml^?1 at S/N ratio of 3, limit of quantitative (LOQ) 3.59 × 10^?4 μgml^?1 and the relative standard deviation 2_.63 %. The method has been successfully applied to the determination of montelukast in plasma of human body. Results specified that relative chemiluminescence intensity (ΔI) has good proportional with the montelukast concentration with R² = 0.99979. The test of the recovery efficiency for known amounts of montelukast was also performed, the recoveries range obtained from 98.2 to 103.3 %, with RSDs of <4 % indicated that the proposed method was reliable.     

Small-angle neutron scattering study of radiation defects in synthetic quartz

The superatomic structure of synthetic quartz single crystals with dislocation densities ρ = 54 and 570 cm^?2 was studied in the initial state and after irradiation with fast neutrons with energies E _n > 0.1 MeV in a WWRM reactor (St. Petersburg Nuclear Physics Institute) in the fluence range F = 0.2 × 10¹⁷?5.0 × 10¹⁸ neutrons/cm². Weak irradiation with F = 0.2 × 10¹⁷ neutrons/cm² causes only slight structural changes, whereas appreciable generation of defects with radii of gyration r _g ～ 1–2 nm and R _G ～ 40–50 nm occurs at F = 7.7 × 10¹⁷?5.0 × 10¹⁸ neutrons/cm². As the fluence increases further, the number and volume fraction of point defects, as well as extended (channels ～2 nm in radius) and globular (amorphous phase nuclei) defects, increase.     

A New Candidate Laser Dye Based 1,4-Bis[β-(2-Naphthothiazolyle)Vinyl]Benzene. Spectroscopic Behavior,Laser Parameters and Excitation Energy Transfer

A new candidate laser dye based 1,4-bis[β-(2-naphthothisolyl) vinyl] benzene (BNTVB) were prepared, and characterized in various organic solvents. The center polarity is less sensitive than electronic absorption. A red shift was noticed in the fluorescence spectra (ca. 40 nm) with increment in the solvent’s polarity, this means that BNTVB’s polarity appreciates upon excitation. The dipole moment of ground state (μ_g) and the excited singlet state dipole moment (μ_e) are determined from Kawski – Chamma and Bakshiev–Viallet equations using the disparity of Stokes shift with solvent polarity function of ε (dielectric constant) and n (refractive index) of the solvent. The result was found to be 0.019D and 5.13D for ground and exited state, in succession. DFT/TD-DFT manners were used to understand the electronic structures and geometric of BNTVB in other solvents. The experimental and theoretical results showed a good agreement. The photochemical quantum yield (Ф_c) of BNTVB was calculated in variable organic reagents such as Dioxane, CHCl₃, EtOH and MeOH at room temperature. The values of φ_c were calculated as 2.3?×?10^?4, 3.3?×?10^?3, 9.7?×?10^?5 and 6.2?×?10^?5 in Dioxane, CHCl₃, EtOH and MeOH, respectively. The dye solutions (2?×?10^?4 M) in DMF, MeOH and EtOH give laser emission in the blue-green region. The green zone is excited by nitrogen pulse 337.1 nm. The tuning range, gain coefficient (α) and cross – section emission (σ_e) of laser were also estimated. Excitation energy transfer from BNTVB to rhodamine-6G (R6G) and N,N-bis(2,6-dimethyphenyl)-3,4:9,10-perylenebis-(dicarboximide) (BDP) was also studied in EtOH to increase the laser emission output from R6G and BDP when excited by nitrogen laser. The dye-transfer power laser system (ETDL) obeys the Foster Power Transmission (FERT) mechanism with a critical transmission distance, R_o of 40 and 32 ? and k_ET equals 2.6?×?10¹³ and 1.06?×?10¹³ M^?1 s^?1 for BNTVB / R6G and BNTVB / BDP pair, respectively.     

The GaP(001) surface and the adsorption of Cs

GaP(001) cleaned by argon-ion bombardment and annealed at 500°C showed the Ga-stabilized GaP(001)(4 × 2) structure. Only treatment in 10^?5 Torr PH₃ at 500°C gave the P-stabilized GaP(001)(1 × 2) structure. The AES peak ratio $\text{P}\text{Ga}$ is 2 for the (4 × 2) and 3.5 for the (1 × 2) structure. Cs adsorbs with a sticking probability of unity up to 5 × 10¹⁴ Cs atoms cm^?2 and a lower one at higher coverages. The photoemission measured with uv light of 3660 Å showed a maximum at the coverage of 5 × 10¹⁴ atoms cm^?2. Cs adsorbs amorphously at room temperature, but heat treatment gives ordered structures, which are thought to be reconstructed GaP(001) structures induced by Cs. The LEED patterns showed the GaP(001)(1 × 2) Cs structure formed at 180°C for 10 h with a Cs coverage of 5 × 10¹⁴ atoms cm^?2, the GaP(001)(1 × 4) Cs formed at 210°C for 10 hours with a Cs coverage of 2.7 × 10¹⁴ atoms cm^?2, the GaP(001)(7 × 1) and the high temperature GaP(001)(1 × 4), the latter two with very low Cs content. Desorption measurements show three stability regions: (a) between 25–150°C for coverages greater than 5 × 10¹⁴ atoms cm^?2, and an activation energy of 1.2 eV; (b) between 180–200°C with a coverage of 5 × 10¹⁴ atoms cm^?2, and an activation energy of 1.8 eV; (c) between 210–400°C with a coverage of 2.7 × 10¹⁴ atoms cm^?2, and an activation energy of 2.5 eV.     

Radiation enhanced diffusion in UO2 and (U,Pu)O2

Abstract

The radiation enhanced diffusion (coefficient D*) of U-233 and Pu-238 in UO₂ and (U, Pu)O₂ with 2.5 and 15% Pu was measured during fission in a nuclear reactor. Normal diffusion sandwiches with a thin tracer layer were used. A radio-frequency furnace allowed the temperatures to be varied between 130 and 1400°. Neutron fluxes (7 × 10¹² to 1.2 × 10¹⁴ n cm^?2 s^?1) and irradiation times (56 to 334 h) were also varied to cover ranges of fission rates [Fdot] between 7× 10¹¹ and 6.4 × 10¹³ f cm^?3 s^?1 and of doses F between 4.2 × 10¹⁷ and 3.1 × 10¹⁹ f cm³. Below ～1000°, D* was completely athermal and increased linearly with [Fdot]. It was described by D* = A[Fdot] with A = 1.2× 10^?29cm⁵. A possible temperature dependence was indicated between ～1000and 1200°. The results are explained in terms of thermal and pressure effects of fission spikes and are related with other studies of radiation damage as well as with technologically interesting processes occurring in UO₂ during irradiation.