Charge-transfer bands in crystals of alkaline earth fluorides with Eu<Superscript>3+</Superscript> and Yb<Superscript>3 + 1</Superscript>

The absorption, luminescence, and excitation spectra of CaF₂, SrF₂, and BaF₂ crystals with EuF₃ or YbF₃ impurity have been investigated in the range 1–12 eV. In all cases, strong wide absorption bands (denoted as CT₁) were observed at energies below the 4f ⁿ -4f ^{n ? 1}5d absorption threshold of impurity ions. Weaker absorption bands (denoted as CT₂) with energies 1.5–2 eV lower than those of the CT₁ bands have been found in the spectra of CaF₂ and SrF₂ crystals with EuF₃ or YbF₃ impurities. The fine structure of the luminescence spectra of CaF₂ crystals with EuF₃ impurities has been investigated under excitation in the CT bands. Under excitation in the CT₁ band, several Eu centers were observed in the following luminescence spectra: C _4v , O _h , and R aggregates. Excitation in the CT₂ bands revealed luminescence of only C _4v defects.     

Magnetooptical,optical, and magnetotransport properties of Co/Cu superlattices with ultrathin cobalt layers

We investigated the field dependences of the magnetization and magnetoresistance of superlattices [Co(t _x, Å)/Cu(9.6 Å)]30 prepared by magnetron sputtering, differing in the thickness of cobalt layers (0.3 Å ≤ t _Co ≤ 15 Å). The optical and magnetooptical properties of these objects were studied by ellipsometry in the spectral region of hω= 0.09–6.2 eV and with the help of the transverse Kerr effect (hω= 0.5–6.2 eV). In the curves of an off-diagonal component of the tensor of the optical conductivity of superlattices with t _Co = 3–15 Å, a structure of oscillatory type (“loop”) was detected in the ultraviolet region, resulting from the exchange splitting of the 3d band in the energy spectrum of the face-centered cubic structure of cobalt (fcc Co). Based on magnetic experiments and measurements of the transverse Kerr effect, we found the presence of a superparamagnetic phase in Co/Cu superlattices with a thickness of the cobalt layers of 3 and 2 Å. The transition from superlattices with solid ferromagnetic layers to superparamagnetic cluster-layered nanostructures and further to the structures based on Co and Cu (t _Co = 0.3–1 Å) with a Kondo-like characteristics of the electrical resistivity at low temperatures is analyzed.     

Elastic properties of D<Subscript>2</Subscript>O ices in solid-state amorphization and transformations between amorphous phases

Nonequilibrium phase transformations in D₂O ices, including the solid-state amorphization of ice 1h (1h-hda) and the heating-induced transition cascade hda-lda-1c-1h from high-density amorphous (hda) ice to low-density amorphous (lda) ice followed by crystallization in cubic ice 1c and phase transition to ordinary hexagonal ice 1h, were studied using an ultrasonic technique. It has been shown that, as in H₂O ice, the softening of a crystal lattice or an amorphous network precedes nonequilibrium transformations. However, noticeable isotopic differences in the behavior of the elastic properties of H₂O and D₂O, in particular, their 1h and hda modifications, call for a more detailed study of the structural features of these H₂O and D₂O phases.     

Formation and composition of the clathrate phase in the H<Subscript>2</Subscript>O-H<Subscript>2</Subscript> system at pressures to 1.8 kbar

The transition of the hexagonal ice phase I_h to the clathrate phase sII has been found in the H₂O-H₂ system at a pressure of about 1 kbar under conditions of an excess of gaseous hydrogen. The pressures of the I_h → sII and sII → I_h transitions have been determined over a temperature range from ?36 to ?18°C, and the pressure dependence of the synthesis temperature of the clathrate phase from a liquid at pressures from 1.0 to 1.8 kbar has been constructed. The solubility of hydrogen in the I_h and sII phases and in liquid water has been measured. The concentration of hydrogen in the clathrate phase sII is about 1.2 wt % (10 mol %) near the boundary of the sII → I_h transition, and it increases to 2 wt % (16 mol %) at a pressure of 1.8 kbar.     

Line shape of <Superscript>57</Superscript>Co sources exhibiting self absorption

The effect of selfabsorption in Mössbauer sources is studied in detail. Spectra were measured using an old ⁵⁷ C o/R h source of 74M B q activity with an original activity of ca. 3.7G B q and a 0.15G B q ⁵⁷ C o/α ? F e source magnetized by an in-plane magnetic field of 0.2 T. The ⁵⁷ C o/α ? F e source of a thickness of 25 μ was used both from the active and the inactive side giving cause to very different selfabsorption effects. The absorber was a single crystal of ferrous ammonium sulphate hexahydrate (FAS). Its absorption properties were taken over from a detailed study (Bull et al., Hyperfine Interact. 94(1–3), 1; Spiering et al. 2). FAS (space group P21/c) crystallizes as flat plates containing the (\(\overline {2}\)01) plane. The γ-direction was orthogonal to the crystal plate. The ⁵⁷ C o atoms of the ⁵⁷ C o/R h source were assumed to be homogeneously distributed over a 6μ thick Rh foil and to follow a one dimensional diffusion profile in the 25 μ Fe-foil. The diffusion length was fitted to 10 μ. The theory follows the Blume-Kistner equations for forward scattering (Blume and Kistner, Phys. Rev. 171, 417, 3) by integrating over the source sampled up to 128 layers.     

Features of Electronic Structure of Intermetallic Compounds CeNi<Subscript>4</Subscript>M (M = Fe,Co, Ni,Cu)

The evolution of the electronic structure of CeNi₄M (M = Fe, Co, Ni, Cu) intermetallics depending on the type of nickel substitutional impurity is explored. We have calculated band structures of these compounds and considered options of substituting one atom in nickel 3d sublattice in both types of crystallographic positions: 2c and 3g. The analysis of total energy self-consistent calculations has shown that positions of 2c type are more energetically advantageous for single iron and cobalt impurities, whereas a position of 3g type is better for a copper impurity. The Cu substitutional impurity does not change either the nonmagnetic state of ions or the total density at the Fermi level states. Fe and Co impurities, on the contrary, due to their considerable magnetic moments, induce magnetization of 3d states of nickel and cause significant changes in the electronic state density at the Fermi level.     

Edge electroluminescence of silicon: An amorphous-silicon-crystalline-silicon heterostructure

Silicon edge electroluminescence (EL) was observed on an amorphous-silicon-crystalline-silicon heterostructure (a-Si: H(n)/c-Si(p)) in the temperature range from 77 to 300 K. The room-temperature EL internal quantum efficiency of the heterostructure under study was found to be about 0.1%. A theoretical analysis of the emissive properties of the a-Si: H(n)/c-Si(p) heterostructure was made in terms of the model of an abrupt planar p-n junction and showed that, for optimal doping, the internal quantum efficiency of the EL may be as high as a few percent at a modulation frequency of about 50 kHz.     

<Emphasis Type="Italic">Ab initio</Emphasis> theory of the electronic structure and spectra of impurity <Emphasis Type="Italic">nl</Emphasis> ions

The fundamentals of the theory of the electronic structure of impurity clusters and the results of numerical calculations for the iron-, lanthanum-, and actinium-group ions in Me⁺ⁿ: [L]_k clusters are presented. The effects of the interionic distance and ligands in the Me⁺ⁿ: [L]_k clusters on the electronic structure of the nl ^N and nl^N?1n′l′ configurations of the 3d, 4f, and 5f ions are considered. The correspondence between the optical and x-ray spectra of different impurity crystals is also analyzed.     

Formation of a monolayer <Emphasis Type="Italic">h</Emphasis>-BN nanomesh on Rh (111) studied using <Emphasis Type="Italic">in-situ</Emphasis> STM

As a member of the 2D family of materials, h-BN is an intrinsic insulator and could be employed as a dielectric or insulating inter-layer in ultra-thin devices. Monolayer h-BN can be synthesized on Rh (111) surfaces using borazine as a precursor. Using in-situ variable-temperature scanning tunneling microscopy (STM), we directly observed the formation of h in real-time. By analyzing the deposition under variable substrate temperatures and the filling rate of the h-BN overlayer vacant hollows during growth, we studied the growth kinetics of how the borazine molecules construct the h-BN overlayer grown on the Rh surface.     

Restricting Positive Energy Representations of Diff<Superscript>+</Superscript>(<Emphasis Type="Italic">S</Emphasis><Superscript>1</Superscript>) to the Stabilizer of <Emphasis Type="Italic">n</Emphasis> Points

Let G _n ? Diff⁺(S ¹) be the stabilizer of n given points of S ¹. How much information do we lose if we restrict a positive energy representation \(U^c_h\) associated to an admissible pair (c, h) of the central charge and lowest energy, to the subgroup G _n ? The question, and a part of the answer originate in chiral conformal QFT. The value of c can be easily “recovered” from such a restriction; the hard question concerns the value of h. If c ≤ 1, then there is no loss of information, and accordingly, all of these restrictions are irreducible. In this work it is shown that \(U^c_{h}|_{G_n}\) is always irreducible for n =  1 and, if h =  0, it is irreducible at least up to n ≤  3. Moreover, an example is given for c >  2 and certain values of \(h \neq \tilde{h}\) such that \(U^c_{h}|_{G_1}\simeq U^c_{\tilde{h}}|_{G_1}\) . It is also concluded that for these values \(U^c_{h}|_{G_n}\) cannot be irreducible for n ≥  2. For further values of c, h and n, the question is left open. Nevertheless, the example already shows that, on the circle, there are conformal QFT models in which local and global intertwiners are not equivalent.     

Analytic properties of the effective dielectric constant of a two-dimensional Rayleigh model

Analytic properties of the dimensionless static effective dielectric constant f(p, h) of a two-dimensional Rayleigh model (p is the concentration and h is the ratio of the dielectric constants of components) are considered as a function of the complex variable h. It is shown that the only singularities of the function f(p, h) are first-order poles for real h = h _n < 0 (n = 1, 2, ...) with the condensation point h = ?1, which form an infinite discrete (countable) set. The positions of the first ten poles of the function f(p, h) and the residues at these points are calculated and represented graphically versus the concentration. Based on the results obtained, a pole-type approximate formula is proposed that describes the behavior of the function f(p, h) over a wide range of p and complex h.     

<Emphasis Type="Italic">O</Emphasis>(1) eV sterile neutrino in <Emphasis Type="Italic">f</Emphasis>(<Emphasis Type="Italic">R</Emphasis>) gravity

We refer [1] to the role of an additional O(1) eV sterile neutrino in modified gravity models. We find parameter constraints in particular f(R) gravity model using following up-to-dated cosmological data: measurements of the cosmic microwave background (CMB) anisotropy, the CMB lensing potential, the baryon acoustic oscillations (BAO), the cluster mass function and the Hubble constant. It was obtained for the sterile neutrino mass 0.47 eV < m _ν,sterile < 1 eV (2σ) assuming that the sterile neutrinos are thermalized and the active neutrinos are massless, not significantly larger than in the standard cosmology model within the same data set: 0.45 eV < m _ν,sterile < 0.92 eV (2σ). But, if the mass of sterile neutrino is fixed and equals ≈ 1.5 eV according to various anomalies in neutrino oscillation experiments, f(R) gravity is much more consistent with observation data than the CDM model.     

Mechanisms of ionization of <Emphasis Type="Italic">F</Emphasis><Subscript>2</Subscript>-centers in laser media on the basis of LiF crystals

F₂ color centers with a superhigh concentration (5000-cm^–1 absorption coefficient at 450 nm) were formed by high-density electron beams in a layer of LiF crystals of micrometer thickness. The F₂-centers excited by high-power nanosecond wide-band optical pulses (the “soft” pumping regime) efficiently amplified the laser radiation and showed high stability under these conditions. A low stability of F₂-centers to laser radiation (the “hard” excitation regime) is explained by the dissociation of (F ₂ ⁺ , F^–) pairs induced by two-step ionization of F₂-centers: (2hν > 4.5 eV) → F₂ → (F₂)* → F ₂ ⁺ + e; F + e → F^–; F ₂ ⁺ + F^– → 3F.     

Crossover between the thermodynamic and nonequilibrium scenarios of structural transformations of H<Subscript>2</Subscript>O I<Emphasis Type="Italic">h</Emphasis> ice during compression

A detailed investigation of different scenarios of structural transformations of H₂O Ih ice during compression to a pressure of 2 GPa in the temperature range from 77 to 200 K is performed. In the range of temperatures and pressures being treated, detailed data are obtained for the density and the shear modulus for different phases of ice including the hda, IX, and XII phases. The experimentally obtained correlations for the density and ultrasonic velocities, with due regard for the available data of structural investigations, are used to identify the transformation sequences Ih→hda (below 135 K), Ih→II→VI (above 165 K), and Ih→IX→VI (from 155 to 180 K). In the vicinity of the crystallization temperature of amorphous ice, i.e., at about 140 K, an anomalous transformation pattern is observed, which is interpreted as predominantly the Ih→XII phase transition. The temperature crossover is discussed between the mode of solid-phase amorphization (Ih→hda) and crystal-crystal transitions, as well as the metastable nature of IX ice and the mechanism of solid-phase amorphization.     

Concerning positive-parity collective states in <Superscript>18</Superscript>O

I discuss collective positive-parity states in ¹⁸O in light of two recent experiments. Single-particle widths have been calculated and used to extract spectroscopic factors. Special attention is given to 4p -2h and 6p -4h cluster bands.     

Diamagnetic susceptibility of hydrogenic donor impurity in a V-groove GaAs/Ga<Subscript>1-</Subscript><Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Al<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>As quantum wire

In this work, the diamagnetic susceptibility and the bindingenergy of a hydrogenic donor impurity both in the parabolic andnon-parabolic conduction band models have been calculated withinthe effective mass approximation for a V-grooveGaAs/Ga_{1- x} Al _x As quantum wire. According to the resultsobtained from the present work reveals that (i) the value ofdiamagnetic susceptibility due to the non-parabolicity effect ishigher than that of parabolicity effect; (ii) the values ofdiamagnetic susceptibility and binding energy due to thenon-parabolicity effect is not appreciable at low Al molefractions; (iii) the diamagnetic susceptibility approaches to thebulk value both in L \(\rightarrow\) 0 or L \(\rightarrow\) ∞; (iv)the effect of non-parabolocity is not appreciable in the bindingenergy and energy dependent effective mass, for energies lowerthan 50 MeV.     

Structural phase transition in (1−<Emphasis Type="Italic">x</Emphasis>)SrTiO<Subscript>3</Subscript>+<Emphasis Type="Italic">x</Emphasis>SrMg<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>O<Subscript>3</Subscript> solid solutions

The temperature dependences of the shear modulus and internal friction in ceramic samples of (1?x)SrTiO₃+xSrMg_1/3Nb_2/3O₃ solid solutions were studied by the torsional vibration method in the range 80–300 K. It was established that the temperature T _a of the O _h ¹ -D _4h ¹⁸ structural phase transition in these solid solutions increases with increasing x, although the lattice constant also increases. A discussion is presented of the contributions to the T _a (x) dependence due to a change in the volume and changes caused by the presence of a second solid-solution component (the impurity contribution). It is also shown that the defect-induced relaxation revealed earlier in a study of the dielectric properties of these materials manifests itself in internal friction peaks.     

Room Temperature Spin Accumulation Effect in Boron Doped Si Created by Epitaxial Fe<Subscript>3</Subscript>Si/<Emphasis Type="Italic">p</Emphasis>-Si Schottky Contact

To study spin-dependent transport phenomena in Fe₃Si/p-Si structures we fabricated 3-terminal planar microdevices and metal/semiconductor diode using conventional photolithography and wet chemical etching. I?V curve of prepared diode demonstrates rectifying behavior, which indicates the presence of Schottky barrier in Fe₃Si/p-Si interface. Calculated Schottky barrier height is 0.57 eV, which can provide necessary conditions for spin accumulation in p-Si. Indeed, in 3-terminal planar device with Fe₃Si/p-Si Schottky contact Hanle effect was observed. By the analysis of Hanle curves spin lifetime spin diffusion length in p-Si were calculated, which are 145 ps and 405 nm, respectively (at T = 300 K). Spin lifetime strongly depends on temperature which can be related to the fact that spin-dependent transport in our device is realized via the surface states. This gives a perspective of creation of spintronic devices based on metal/semiconductor structure without need for forming tunnel or Schottky tunnel contact.     

On the hole scattering anisotropy in the PbSb<Subscript>2</Subscript>Te<Subscript>4</Subscript> layered compound from data on the Nernst-Ettingshausen coefficient

Three independent components of the Nernst-Ettingshausen coefficient tensor Q _ikl are experimentally measured for an anisotropic single crystal of the p-PbSb₂Te₄ layered compound. The components Q ₁₂₃ and Q ₁₃₂ are found to be negative, whereas the component Q ₃₂₁ is positive. The experimental data on the anisotropy of the Nernst-Ettingshausen coefficient are discussed together with the available data on the thermopower, the Hall effect, and the electrical conductivity. The analysis demonstrates that the experimental data on the transport effects in p-PbSb₂Te₄ can be explained within a one-band model of the band spectrum and a mixed mechanism of hole scattering under the assumption that scattering from acoustic phonons and scattering from impurity ions are dominant in the cleavage plane and along the c ₃ trigonal axis, respectively.     

Optical properties and mechanisms of current flow in Cu<Subscript>2</Subscript>ZnSnS<Subscript>4</Subscript> films prepared by spray pyrolysis

Thin films Cu₂ZnSnS₄ (up to 0.9 μm thick) with p-type conductivity and band gap E_g = 1.54 eV have been prepared by the spray pyrolysis of 0.1 M aqueous solutions of the salts CuCl₂ · 2H₂O, ZnCl₂ · 2H₂O, SnCl₄ · 5H₂O, and (NH₂)₂CS at a temperature T_S = 290°C. The electrophysical properties of the films have been analyzed using the model for polycrystalline materials with electrically active grain boundaries. The energy and geometric parameters of the grain boundaries have been determined as follows: the height of the barriers is E_b ≈ 0.045–0.048 eV, and the thickness of the depletion region is δ ≈ 3.25 nm. The effective concentrations of charge carriers p₀ = 3.16 × 10¹⁸ cm^–3 and their mobilities in crystallites μ_p = 85 cm²/(V s) have been found using the technique for determining the kinetic parameters from the absorption spectra of thin films at a photon energy hν ≈ E_g. The density of states at grain boundaries N_t = 9.57 × 10¹¹ cm^–2 has been estimated.