Diluted magnetic semiconductor superlattices and heterostructures

Diluted magnetic semiconductors (DMS) are mixed semiconducting crystals whose lattice is made up in part of substitutional magnetic ions. Cd_1−xMn_xTe and Hg_1−xMn_xTe are examples of such materials. Their structural and band parameters can be “tuned” by composition over a wide range. They can thus be exploited in situations completely similar to those involving Ga_1−xAl_xAs. Using molecular beam epitaxy, we have grown Cd_1−xMn_xTe superlattices with alternating Mn content, having up to 150 layers, with layer thickness ranging from 50 to 100 Å. The superlattice structure is clearly revealed by transmission electron microscopy and by zone-folding of the phonon spectrum observed in Raman scattering. Photoluminescence observed on Cd_1−xMn_xTe superlattices is several orders of magnitude greater than that from a Cd_1−xMn_xTe film with uniform Mn content, or from bulk Cd_1−xMn_xTe specimens. The presence of localized magnetic moments in DMS results in a strong exchange interaction between these moments and band electrons. This in turn leads to gigantic Zeeman splittings of impurity states, exciton levels, Landau levels, and the bands themselves. Zeeman splittings as large as 20 meV (which in non-magnetic semiconductors would require unrealistic megagauss fields) are easily achieved in DMS in fields of several kilogauss. Since the magnitude of this exchange-induced splitting in DMS can be comparable to the binding energies and to the minigaps encountered in multiple quantum wells, DMS superlattices hold promise of a host of novel effects of both fundamental and applied interest.     

Magnetic field effect on transitions between direct and indirect excitons in diluted magnetic semiconductor double quantum wells

Transitions between direct and indirect excitons with change of magnetic field in double quantum well heterostructure Cd_1−xMg_xTe/Cd_1−yMg_yTe/Cd_1−xMg_xTe/Cd_1−zMn_zTe/Cd_1−xMg_xTe in external magnetic field are studied. The structure contains diluted magnetic semiconductor (Cd,Mn)Te layer that forms magnetic quantum well with the depth depending on the magnetic field intensity. Above some magnetic field the indirect exciton becomes the lowest excited state of the system. The indirect exciton lifetime exceeds by several orders of magnitude of the direct exciton one. The range of quantum well widths for which the indirect exciton is the exciton lowest state was estimated for the proposed system.     

Ab-initio investigations of structural, electronic, magnetic and optical properties of ferromagnetic Cd1-xMnxTe

We report ab-initio calculations of the structural, electronic, magnetic and optical properties of the alloy Cd_1-xMn_xTe as a function of the Mn concentration ‘x’. Ab-initio calculations are based on the density functional theory (DFT) within the generalized gradient approximation (GGA). The calculated lattice constants of the Cd_1-xMn_xTe alloys exhibit Vegard's law downward bowing parameter. For the minority spin channel the Fermi level shifts toward higher energy with the value of ‘x’ in Cd_1-xMn_xTe. The spin-exchange splitting energy Δ_x(d) increases with increasing ‘x’ in Cd_1-xMn_xTe and the values of p-d exchange splitting energy Δ_x(pd) of Cd_1-xMn_xTe show that the effective potential for the minority spin is more attractive than that for the majority spin. The values of exchange constants N₀α and N₀β obtained for Cd_1-xMn_xTe are in agreement with the reported data. The magnetic moment per Mn atom reduces from its free space charge value of 5μ_B to around 4μ_B due to p-d hybridization and this results into an appearance of small local magnetic moments on the non-magnetic Cd and Te sites. The absorption threshold shifts toward higher energy and the static refractive index decreases with the increasing value of ‘x’ in Cd_1-xMn_xTe.     

NiP:Mn as a potential magnetic contacting material to Cd1−xMnxTe

Injection of spin-polarized current into spintronic devices is a challenge to the semiconductor physicists and technologists. II-VI compound semiconductors can act as the spin aligner on the top of GaAs light emitting diode. However, II-VI compound semiconductor like Cd_1−xMn_xTe is still suffering from contacting problem. Application of electroless deposited magnetic NiP:Mn contact would enhance efficient current injection into Cd_1−xMn_xTe than the standard gold contact. A technique for electroless deposition of NiP:Mn on Cd_1−xMn_xTe have been described here. The electronic and magnetic properties of the contact material NiP:Mn and the contact performance of NiP:Mn relative to evaporated gold have been evaluated. The contact fulfills the requirements of resistivity and ferromagnetism for application to Cd_1−xMn_xTe.     

Quantum properties of two-dimensional electron gas in the inversion layer of Hg1−xCdxTe bicyrstals

The electronic and magnetotransport properties of conduction electrons in the grain boundary interface of p-type Hg_1−xCd_xTe bicrystals are investigated. The results clearly demonstrate the existence of a two-dimensional degenerate n-type inversion layer in the vicinity of the grain boundary. Hydrostatic pressure up to 10³ MPa is used to characterize the properties of the two-dimensional electron gas in the inversion layer. At atmospheric pressure three series of quantum oscillations are revealled, indicating that tthree electric subbands are occupied. From quantum oscilations of the magnetoresistivity the characteristics parameters of the electric subbands (subband populations n_si, subband energies E_F−E_i, effective electron masses m^*_ci) and their pressure dependences are established. A strong decrease of the carrier concentration in the inversion layer and of the corresponding subband population is observed when pressure is applied A simple theoretical model based on the triangular-well approximation and taking into account the pressure dependence of the energy band structure of Hg_1−xCd_xTe is use to calculate the energy band diagram of the quantum well and the pressure dependence of the subband parameters.     

Optical properties and ferromagnetism of ternary Cd<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Mn<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Te nanocrystals

Cd_1−x Mn _x Te (x = 0, 0.1, 0.2) nanocrystals have been synthesized by mechanical alloying (MA) Cd, Mn, and Se elemental powders. XRD patterns and HRTEM images confirmed the formation of cubic Cd_1−x Mn _x Te nanocrystals. All the diffraction peaks from elemental Cd, Mn, and Te powders disappeared completely in those XRD patterns of as-milled Cd_1−x Mn _x Te nanocrystals for more than 20 h. When the MA process was carried out for 40 h, typical zinc blende structure diffraction mode was exhibited in the XRD pattern. Subsequently, capping the surface of as-milled Cd_1−x Mn _x Te nanocrystals with long chain trioctylphosphine/trioctylphosphine oxide/nitric acid (TOP/TOPO/NA) molecules has achieved colorful dispersion solution, which shows similar optical properties to those CdTe nanocrystals prepared by wet chemical process. The grain size is within the range of 2–8 nm for the capped Cd_1−x Mn _x Te nanocrystals being ball milled for 40 h. The PL excitation peak red shifts to longer wavelength side with increasing Mn concentration. Pure CdTe nanocrystals show ferromagnetism behavior at room temperature, the saturation magnetization value and magnetic hysteresis loop increase with the content of substituting Mn ions within the Cd_1−x Mn _x Te nanocrystals.     

Magnetische untersuchungen an mischkristallen der quasibinären legierungssysteme (Cd Te)1-x (Mn Te)x und (Sn Te)1-x (Mn Te)x

The magnetic susceptibility and magnetization are presented for polycrystalline samples of the alloy systems Cd_1-xMn_xTe 0 < x 0.1 and Sn_1-xMn_xTe 0 < 4 0.4. The magnetic measurements were performed between 2.3 K and 300 K in external magnetic fields up to 11 kOe. At sufficiently high temperatures the susceptibility can be described by a Curie-Weiss law. In the system Sn_1-xMn_xTe θ_p is positive. A linear dependence θ_p ∞ x was found with θ_p(0.4) = 49 K. In the series Cd_1-xMn_xTe θ_p changes sign. For θ < x < 0.04 θ_p is positive with a maximum θ_p ≈ 10 K at x = 0.02. In the region x #62; 0.04 θ_p becomes negative with θ_p = -35 K at x = 0.1. The effective spin value of manganese is S_eff #62; 5/2 for all the samples. The investigation was done to check the assumption that ferromagnetic coupling may exist in tellurides of manganese if the shortest distance d_MnMn is greater than 3.4 Å. This hypothesis has been stated. In the case θ_p #62; 0 the results are partly explained by the RKKY exchange coupling.     

Optical properties of Cd1−xZnxTe thin films fabricated through sputtering of compound semiconductors

Cd_1−xZn_xTe thin film fabrication is necessary for its photovoltaic and imaging applications in large scale. Thermally annealed and thereby interdiffused r.f. sputtered multilayers comprising of CdTe and ZnTe have been utilized here for the fabrication of Cd_1−xZn_xTe thin films. Photoluminescence and change of resistance of the multilayer under illumination were studied using different annealing temperatures and varying number of repetitions. It was found that three number of repetitions annealed at 300 °C exhibited the best results.     

Magnetooptical studies of Cd1−xMnxTe quantum wells with parabolic confining potential

We report on magnetooptical studies of II–VI semiconductor quantum wells with a parabolic shape of the potential grown on the basis of Cd_1−xMn_xTe. Photoluminescence excitation measurements revealed a series of peaks equidistant in energy associated with interband optical transitions between “harmonic oscillator states”. We observed the Zeeman splitting for heavy-hole excitons up to the subband index n=5. From the comparison of the experimental data with numerical calculations for the Zeeman splitting it was possible to determine the correct shape of the potential.     

Dynamical nonlinear refraction in PbTe/Pb1−xSnxTe MQWs

An analysis of nonlinear refraction due to the dynamical free carrier filling of minibands in PbTe/Pb_1−xSn_xTe (X = 0.2) MQEs on (111) BaF₂ substrates is presented. The results are compared with those for bulk Pb_1−xSn_xTe layers. The abrupt substantial increase of n(I) in MQWs is connected with crossing of the minibands in oblique valleys of Pb_1−xSn_xTe wells by the Fermi quasi-level.     

Electrical properties of perovskite-type La(Cr1−xMnx)O3+δ

Perovskite-type La(Cr_1−xMn_x)O_3+δ (0.0x1.0) was synthesized using a sol–gel process. The crystal structure of La(Cr_1−xMn_x)O_3+δ changes from orthorhombic to rhombohedral at x=0.6. The Mn⁴⁺ ion content increases monotonically in the range 0.2x1.0. The magnetic measurement of La(Cr_1−xMn_x)O_3+δ indicates that a Mn³⁺ ion is a high-spin state with (d)³(dγ)¹. The variation of the average (Cr, Mn)-O distance is explained by ionic radii of the Cr³⁺, the Mn³⁺, the Mn⁴⁺ ions. Since the log σT–1/T curve is linear and the Seebeck coefficient (α) is independent of temperature, it is considered that La(Cr_1−xMn_x)O_3+δ is a p-type semiconductor and exhibits the hopping conductivity.     

Spin-polarized structural, electronic and magnetic properties of diluted magnetic semiconductors Cd1−xMnxTe in zinc blende phase

We have investigated the structural, electronic and magnetic properties of the diluted magnetic semiconductor (DMS) Cd_1−xMn_xTe (for x=0.75 and 1.0) in the zinc blende (B3) phase by employing the ab-initio method. Calculations were performed by using the full potential linearized augmented plane wave plus local orbitals (FP-L/APW+lo) method within the frame work of spin-polarized density functional theory (SP-DFT). The electronic exchange-correlation energy is described by generalized gradient approximation (GGA). We have calculated the lattice parameters, bulk modulii and the first pressure derivatives of the bulk modulii, spin-polarized band structures, and total and local densities of states. We estimated the spin-exchange splitting energies Δ_x(d) and Δ_x(pd) produced by the Mn3d states, and we found that the effective potential for the minority spin is more attractive than that of the majority spin. We determine the s-d exchange constant N₀α (conduction band) and p-d exchange constant N₀β (valence band) and these somewhat agree with a typical magneto-optical experiment. The value of calculated magnetic moment per Mn impurity atom is found to be 4.08 μ_B for Cd_0.25Mn_0.75Te and 4.09 μ_B for Cd_0.0Mn_1.0Te. Moreover, we found that p-d hybridization reduces the local magnetic moment of Mn from its free space charge value of 5.0 μ_B and produces small local magnetic moments on the nonmagnetic Cd and Te sites.     

Intracenter luminescence of Mn2+ in Cd1−x MnxTe and Cd1−x−y MnxMgyTe under intense optical pumping

A comparative analysis of the kinetic properties of intracenter 3d luminescence of Mn²⁺ ions in the dilute magnetic superconductors Cd_1?x Mn_xTe and Cd_1?x?y Mn_xMg_yTe is carried out. The influence of relative concentrations of the cation components on the position of the intracenter luminescence peak indicates that the introduction of magnesium enhances crystal field fluctuations. As a result, the processes facilitating nonlinear quenching of luminescence are suppressed. The kinetics of 3d-luminescence quenching in Cd_1?x Mn_xTe are accelerated considerably upon elevation of optical excitation level due to the evolution of cooperative processes in the system of excited manganese ions.     

Einstein relation in n-i-p-i and microstructures of nonlinear optical, optoelectronic and related materials: Simplified theory, relative comparison and suggestions for an experimental determination

We investigate the Einstein relation for the diffusivity-mobility ratio (DMR) for n-i-p-i and the microstructures of nonlinear optical compounds on the basis of a newly formulated electron dispersion law. The corresponding results for III-V, ternary and quaternary materials form a special case of our generalized analysis. The respective DMRs for II-VI, IV-VI and stressed materials have been studied. It has been found that taking CdGeAs₂, Cd₃As₂, InAs, InSb, Hg_1−xCd_xTe, In_1−xGa_xAs_yP_1−y lattices matched to InP, CdS, PbTe, PbSnTe and Pb_1−xSn_xSe and stressed InSb as examples that the DMR increases with increasing electron concentration in various manners with different numerical magnitudes which reflect the different signatures of the n-i-p-i systems and the corresponding microstructures. We have suggested an experimental method of determining the DMR in this case and the present simplified analysis is in agreement with the suggested relationship. In addition, our results find three applications in the field of quantum effect devices.     

Modulation,photoluminescence, and Raman spectroscopy of semiconductor heterostructures

Using illustrative examples from the investigations of the author and his collaborators, it is shown that (1) piezo-modulated reflectivity (2) photoluminescence and (3) Raman spectroscopy can be effectively used in the study of collective and localized excitations in semiconductor heterostructures. Results on epilayers of Cd_1−xMn_xTe:In and ZnSe and quantum well structures of GaAs/Al_xGa_1−xAs; Cd_1−xMn_xTe/Cd_1−yMn_yTe; Cd_1−xMn_xTe/CdTe; Cd_1−xMn_xTe:In/CdTe are discussed.     

Photosensitivity of surface-barrier and point structures on Cd<Subscript>1 − x</Subscript>Mn<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Te single crystals

Two new types of photosensitive structures are proposed and fabricated for the first time on solid-solution single crystals of diamondlike Cd_{1 − x} Mn _x Te (x = 0−0.7) magnetic semiconductors. The photoelectric properties of surface-barrier (In/Cd_{1 − x} Mn _x Te) and welded (weld/Cd_{1 − x} Mn _x Te) structures are studied at T=300 K. The photosensitivity spectra of these structures are analyzed and compared; as a result, the character of the interband optical transitions and the energy gaps of the Cd_{1 − x} Mn _x Te crystals are determined. These structures can be applied in magnetic photoelectronic devices.     

First-principles calculations of the optical band-gaps of ZnxCd1−xO alloys

Using first-principles calculations, we investigated the structural and electronic properties of two binaries: ZnO in wurtzite structure and CdO in wurtzite and rock-salt structures. In addition several compositions with various ordered structures of Zn_xCd_1−xO alloys were studied within the theory of order–disorder transformation. The full potential linearized augmented plane wave method was used and the d orbitals of Zn and Cd were included in the valence bands. In this investigation of alloying ZnO with CdO, the fundamental band-gap of the alloys is shown to be direct and to decrease versus the Cd composition.     

Structural and magnetic properties of Mn3−xCdxTeO6 (x=0, 1, 1.5 and 2)

Mn₃TeO₆ exhibits a corundum-related A₃TeO₆ structure and a complex magnetic structure involving two magnetic orbits for the Mn atoms [Ivanov et al., 2011 [3]]. Mn_3−xCd_xTeO₆ (x=0, 1, 1.5, and 2) ceramics were synthesized by solid state reaction and investigated using X-ray powder diffraction, electron microscopy, and calorimetric and magnetic measurements. Cd²⁺ replaces Mn²⁺ cations without greatly affecting the structure of the compound. The Mn and Cd cations were found to be randomly distributed over the A-site. Magnetization measurements indicated that the samples order antiferromagnetically at low temperature with a transition temperature that decreases with increasing Cd doping. The nuclear and magnetic structure of one specially prepared ¹¹⁴Cd containing sample: Mn_1.5¹¹⁴Cd_1.5TeO₆, was studied using neutron powder diffraction over the temperature range 2-295 K. Mn_1.5¹¹⁴Cd_1.5TeO₆ was found to order in an incommensurate helical magnetic structure, very similar to that of Mn₃TeO₆ [Ivanov et al., 2011 [3]]. However, with a lower transition temperature and the extension of the ordered structure confined to order 240(10) Å.     

Dispersive optical constants of glassy AsSe1−xTex system

The compositional dependence of the optical constants, the refractive index n, and the absorption index k, of the AsSe_1−xTe_x thin films with 0<x<1.0 were determined in the spectral range of 400–2500 nm. The maximum value of the refractive index n, is shifted toward the long wavelength by increasing the Te content in the examined system. The values of the forbidden energy gap of the system have been determined and were correlated with the type and the amount of chemical bonds formed by the increasing Te content in the AsSe_1−xTe_x glassy system. The value of the dispersion energy E_d exhibits low value at the composition containing the same atomic percent of Se and Te.     

Far-infrared spectra of Pb1−xMnxTe alloys

Far-infrared reflectivity spectra of Pb_1−xMn_xTe (0.0001x0.1) single crystals were measured in the 10–250 cm⁻¹ range at room temperature. The analysis of the far-infrared spectra was made by a fitting procedure based on the model of coupled oscillators. In spite of the strong plasmon–LO phonon interaction, we found that the long wavelength optical phonon modes of these mixed crystals showed an intermediate one–two mode behavior.