Lu掺杂AlN的电子结构和光学性质的第一性原理研究

为了探索AlN在光电器件中的潜在应用,采用第一性原理计算了不同Lu掺杂浓度(以原子分数x表示)的AlN(Al_1-xLu_xN)的电子结构和光学性质。研究结果表明,Al_1-xLu_xN的超胞体积随着Lu掺杂浓度的增加而增加,而带隙则相反。Al_1-xLu_xN的静态介电常数在低能区随掺杂浓度的提高而提高,随后逐渐趋向一致。随着Lu掺杂浓度的增加,反射率和吸收系数的峰值强度降低,峰值向较低能量方向移动。Al_1-xLu_xN的能量损失光谱表现出明显的等离子体振荡特性,且峰值低于本征AlN。Al_1-xLu_xN的光电导率在低能区随能量的增加而急剧增加。     

Y-Cu共掺杂ZnO电子结构与光学性质的第一性原理计算

采用基于密度泛函理论(DFT)的第一性原理平面波赝势法研究了本征ZnO、Y和Cu单掺杂ZnO、Y-Cu共掺杂ZnO的电子结构和光学性质. 计算结果表明, 在本文的掺杂浓度下, Y和Cu单掺杂可以提高ZnO的载流子浓度, 从而改善ZnO的导电性, Y-Cu共掺时ZnO半导体进入简并状态, 呈现金属性. Y 掺杂ZnO可以提高体系在紫外区域的吸收, 而Cu掺杂ZnO在可见光和近紫外区域发生吸收增强现象, 其中由于Y离子和Cu离子之间的协同效应, Y-Cu共掺杂ZnO时体系对可见光和近紫外区域的光子能量吸收大幅增加, 因此Y-Cu共掺杂ZnO可以用于制作光电感应器件.     

Mn掺杂GaN的电子结构及光学性质

采用基于密度泛函理论(DFT)的第一性原理平面波赝势法(PWP)计算Mn掺杂GaN(Ga1-xMnN)晶体的电子结构及光学性质,详细讨论掺杂后电子结构的变化.计算表明,Mn掺杂GaN使得Mn 3d与N 2p轨道杂化,产生自旋极化杂质带,Ga1-xMnxN表现为半金属性,非常适于自旋注入,说明该种材料是实现自旋电子器件的理想材料.另结合实验结果分析掺杂后体系的光学性质,发现吸收谱在1.3 eV处出现吸收峰,吸收系数随Mn2+浓度增加而增大.分析表明,该峰是源于Mn2+离子e态与t2态间的带内跃迁.     

Mg、Zn掺杂AlN电子结构的第一性原理计算

采用密度泛函理论(DFT)的第一性原理平面波超软赝势方法, 对Mg、Zn 掺杂AlN 的32 原子超原胞体系进行了几何结构优化, 从理论上给出了掺杂和非掺杂体系的晶体结构参数, 对纤锌矿结构AlN 晶体及AlN:Mg、AlN: Zn 的结构、能带、结合能、电子态密度、集居数、差分电荷分布进行计算和分析. 计算结果表明, AlN:Mg、AlN: Zn 都能提供很多的空穴态, 形成p 型电导, 并且Mg是较Zn 更好的p型掺杂剂.     

(Co,P)双掺杂MgF2电子结构和光学性质的第一性原理研究

基于密度泛函理论(DFT)的第一性原理平面波超软赝势方法,计算了纯MgF2晶体、Co掺杂MgF2晶体、P掺杂MgF2晶体和(Co,P)双掺杂MgF2晶体的电子结构和光学特性.结果表明,掺杂后的MgF2晶体发生了畸变,原子之间的键长也有所变化.(Co,P)双掺杂后,由于非金属原子p态和金属原子d态之间的轨道杂化,在MgF...     

采用第一性原理研究非金属掺杂BiOCl的电子结构和光吸收性质

基于密度泛函理论的第一性原理分别研究了不同浓度Br和I掺杂BiOCl体系的能带结构、态密度、形成能和光学性质.研究结果表明,由于Br的4p和I的5p轨道作用,Br和I掺杂可在一定程度上降低BiOCl的禁带宽度,拓宽BiOCl的光吸收范围.Br和I掺杂BiOCl的形成能计算结果表明,Br掺杂BiOCl的稳定性高于I掺杂体系.对于B,C,N,Si,P和S掺杂BiOCl体系,掺杂能级的形成主要由掺杂元素的np轨道贡献,使BiOCl吸收带边红移至可见光区.而S掺杂则位于价带顶位置,有效地降低了BiOCl禁带宽度,使BiOCl响应波长出现红移,且未形成中间能级,不易成为俘获陷阱,因此S掺杂将是一种提高BiOCl可见光光催化活性的改性方法.     

In2O3电子结构与光学性质的第一性原理计算

采用基于密度泛函理论框架下的第一性原理平面波超软赝势方法, 计算了In2O3电子结构和光学线性响应函数, 系统研究了In2O3电子结构与光学性质的内在关系. 利用计算的能带结构和态密度分析了带间跃迁占主导地位的In2O3材料的能量损失函数、介电函数、反射图谱, 根据电荷密度差分图分析了In2O3材料的化学和电学特性. 研究结果表明In2O3光学透过率在可见光范围内高达85%, 可作为优异的透明导电薄膜材料. 同时, 计算结果为我们制备基于In2O3透明导电材料的设计与大规模应用提供了理论依据, 也为监测和控制这一类透明导电材料的生长过程提供了可能性.     

O掺杂MgF2电子结构和光学性质的第一性原理研究

基于密度泛函理论(DFT)的第一性原理平面波超软赝势方法,计算了O原子不同比例(12.5％,8.33％和6.25％)掺杂MgF2晶体的几何结构、电子结构和光学性质.通过对比发现,由于O原子的掺入,体系的禁带宽度减小,材料呈现半金属性.计算也表明,O掺杂对静态介电常数和光吸收系数有重要调制作用,同时也给出了体系性质变化的...     

In、Sc掺杂对SrTiO_3电子结构和光学性质的影响(英文)

采用基于密度泛函理论的第一性原理平面波超软赝势计算方法,研究了In、Sc p型掺杂对SrTiO_3母体化合物稳定性、电子结构和光学性质的影响.计算结果表明:掺杂后,SrIn_(0.125)Ti_(0.875)O_3和SrSc_(0.125)Ti_(0.875)O_3的稳定性降低,体系显示p型简并半导体特征,掺杂仅引起杂质原子近邻区域的几何结构发生变化.同时,SrIn_(0.125)Ti_(0.875)O_3和SrSc_(0.125)Ti_(0.875)O_3体系的光学带隙分别展寬0.35、0.30 eV,光学吸收边发生蓝移,在1.25.2.00 eV的能量区间出现新的吸收峰,该吸收峰与体系Drude型自由载流子的激发相关.此外,SrIn_(0.125)Ti_(0.875)O_3和SrSc_(0.125)Ti_(0.875)O_3体系的可见光透过率有了明显的提高,在350-625 nm波长范围透过率高于85%.掺杂原子在费米能级处低的电子态密度限制了跃迁概率和光吸收.大的禁带宽度、小的跃迁概率和弱的光吸收是SrIn_(0.125)Ti_(0.875)O_3和SrSc_(0.125)Ti_(0.875)O_3体系具有较高光学透明度的原因.     

In、Sc掺杂对SrTiO3电子结构和光学性质的影响

采用基于密度泛函理论的第一性原理平面波超软赝势计算方法, 研究了In、Sc p型掺杂对SrTiO3母体化合物稳定性、电子结构和光学性质的影响. 计算结果表明:掺杂后, SrIn0.125Ti0.875O3和SrSc0.125Ti0.875O3的稳定性降低, 体系显示p型简并半导体特征, 掺杂仅引起杂质原子近邻区域的几何结构发生变化. 同时, SrIn0.125Ti0.875O3和SrSc0.125Ti0.875O3体系的光学带隙分别展宽0.35、0.30 eV, 光学吸收边发生蓝移, 在1.25-2.00 eV的能量区间出现新的吸收峰, 该吸收峰与体系Drude型自由载流子的激发相关. 此外, SrIn0.125Ti0.875O3和SrSc0.125Ti0.875O3体系的可见光透过率有了明显的提高, 在350-625 nm波长范围透过率高于85%. 掺杂原子在费米能级处低的电子态密度限制了跃迁概率和光吸收. 大的禁带宽度、小的跃迁概率和弱的光吸收是SrIn0.125Ti0.875O3和SrSc0.125Ti0.875O3体系具有较高光学透明度的原因.     

First-principles investigation of structural,electronic, and optical properties of transition metal-doped C40 CrSi2

Although CrSi₂ silicide is an attractive advanced functional material, the improvement of electronic and optical properties is still a challenge for its applications. Here, we apply the first-principles calculations to investigate the influence of transition metals (TMs) on the electronic and optical properties of C40 CrSi₂ silicide. Five possible TMs, Ti, V, Pd, Ag, and Pt, are considered in detail. The calculated results show that the additive metals Ti, V, Pd, and Pt are thermodynamically stable in C40 CrSi₂ because the calculated impurity formation energy of TM-doped C40 CrSi₂ is lower than zero. In particular, the V dopant is more thermodynamically stable than that of the other TMs. The calculated electronic structure shows that the band gap of C40 CrSi₂ is 0.391 eV, which is in good agreement with the other results. In particular, the additive TMs improve the electronic properties of C40 CrSi₂ due to the role of the d-state of TMs. Naturally, the additive TMs result in band migration (Cr-3d state and Si-3p state) from the valence band to the conduction band. Interestingly, the additive TMs lead to a red shift for optical adsorption of C40 CrSi₂ silicide.     

荧光素及其衍生物电子结构与光谱性质的理论研究

用ZINDO、从头算和密度泛函理论方法研究荧光素及其衍生物的电子结构和光谱性质.计算结果表明母体双阴离子荧光素分子(1)与单(2)、双(3)取代形成的单阴离子荧光素分子的基态电子结构不同,而且1与2和3的基态和激发态的电子转移方向相反.体系1~3的最大吸收波长依次发生红移,与实验结果相符合.     

First-principles study on the adhesive and electronic property of c-BN(111)/Cu(111) interface

The interface properties of c-BN/Cu composite play an important role in its application. In this work, we employed first-principles calculation to investigate the bonding properties and electronic characteristics of the c-BN(111)/Cu(111) interface. The adhesion properties, partial density of states (PDOS), charge density, and charge density difference of different interfaces were analyzed. The results show that the interface of B-termination “OT” stacking mode is the most stable one. The density of states at the c-BN(111)/Cu(111) interface is similar to that of c-BN bulk phase, indicating that the electronic states of the c-BN layer are not affected by the Cu atoms. The PDOS diagram shows that the 2p orbital of B atoms and the 2p orbital of N atoms are hybridized in the c-BN layer. Besides, 2p orbital of B(N) atoms and 3d orbital of Cu atoms are hybridized in the interface. The covalent bonds and ionic bonds in the interface of N-termination and B-termination OT stacking mode structures are stronger than that of “SL” and “TL” stacking mode. So, the OT stacking mode has larger adhesive energy. Furthermore, Cu and c-BN can form a good coherent interface, which can be used to prepare c-BN/Cu composites and functional materials with excellent mechanical properties.     

苯并噻二嗪衍生物电子结构和非线性光学性质的研究

运用量子化学PM3方法，对苯并噻二嗪几种衍生物的几何构型、电子结构和前线分子轨道成分进行了分析，研究了电荷分布规律。同时，基于体系中电子转移的特点，利用有限场FF方法探讨了其非线性光学性质的变化。结果表明，苯并噻二嗪分子具有较好的二阶非线性光学性质，并可能成为一类良好的光学材料。     

Strain-tunable electronic properties and optical properties of Hf2CO2 MXene

Two-dimensional materials have been extensively applied because of their unusual electronic, mechanical, and optical properties. In this paper, the electronic structure and optical properties of Hf₂CO₂ MXene under biaxial and uniaxial strains are investigated by the Heys-Scuseria-Ernzerhof (HSE06) method. Monolayer Hf₂CO₂ can sustain stress up to 6.453 N/M for biaxial strain and 3.072 N/M for uniaxial strain. Monolayer Hf₂CO₂ undergoes the transition from semiconductor to metal under −12% strain whether it is under biaxial or uniaxial strain. With the increasing biaxial compressive strain, the blue shift of Hf-d, O-p, and C-p orbitals in valence band maximum results in the metallization of monolayer Hf₂CO₂, while the red shift of Hf-d and O-p orbitals in conduction band minimum results in the metallization of monolayer Hf₂CO₂ with increasing uniaxial compressive strain. The analysis of optical properties indicates that uniaxial strain weakens the reflectivity and refractive index of monolayer Hf₂CO₂ in the visible-light range. In addition, the effective mass and the charge distribution under biaxial and uniaxial strains are also explored.     

Ab-initio study of electronic,optical, thermal,and transport properties of Cr4AlB6

Theoretical investigation of different physical parameters of Cr₄AlB₆ have been done within the framework of density functional theory. Cr₄AlB₆ is a no band gap material. Its Cr-3d states contributes the most at the Fermi level. Thermal properties are investigated using quasi-harmonic Debye model as implemented in Gibbs code for different values of pressure and temperature. Study of transport property suggests that its electrical conductivity increases nonlinearly with increase in temperature but the relative change in its value is very low whereas its thermal conductivity increases linearly with the increase in temperature and relative increase in thermal conductivity is very high. The behavior of Cr₄AlB₆ is anisotropic and property is ceramic. It has potential applications in making ceramic capacitors. Its reflectivity is high in low energy region. It suggests that material can be used as coating material for far-infrared radiation. Study of the transport property suggests that because of very high value of thermal conductivity, it can be used for heat sink applications.     

Structural,electronic, and optical properties of phenol‐pyridyl boron complexes for light‐emitting diodes

The coordination chemistry of polydentate chelating ligands that contain mixed pyridinephenol donor sets has been a sought‐after target of study and is a possible extension to the chemistry of polypyridines. In this article, seven compounds, which are the four‐coordinate boron complexes containing the mixed phenol‐pyridyl group, have been studied by theoretical calculation. They can function as charge transport materials and emitters, with high efficiency and stability. To reveal the relationship between the structures and properties of these bifunctional or multifunctional electroluminescent materials, the ground and excited state geometries were optimized at the B3LYP/6‐31G(d), HF/6‐31G(d), and CIS/6‐31G(d) levels, respectively. The ionization potentials (IPs) and electron affinities (EAs) were computed. The mobilities of hole and electron in these compounds were studied computationally based on the Marcus electron transfer theory. The lowest excitation energies, and the maximum absorption and emission wavelengths of these compounds were calculated by time‐dependent density functional theory method. As a result of these calculations, the values of HOMO, LUMO, energy gaps, IPs, EAs, and the balance between the hole‐ and electron‐transfer are greatly improved with the substitution of carbazole in compound 6 . The calculated emission spectra of the seven studied molecules can almost cover the full UV‐vis range (from 447.4 to 649.3 nm). Also, the Stokes shifts are unexpectedly large, ranging from 139.4 to 335.1 nm. This will result in the relatively long fluorescence lifetimes. © 2009 Wiley Periodicals, Inc. Int J Quantum Chem, 2009     

Insight into the electronic,optical, thermodynamic,and thermoelectric properties of novel chalcogenides: An ab initio study

Ternary chalcogenides with direct band gaps are remarkable for being used in many optoelectronic applications. We investigated for structural, electronic, optical, and transport characteristics of new Ba₂CdCh₃ (Ch = S, Se, Te) semiconductors using the full-potential linearized augmented plane wave (FP-LAPW) approach. The band structures of these compounds confirm a direct type of band gap. The phonon dispersion plots along with the predicted negative formation energies suggest these compounds to be thermodynamically stable. Additionally, important optical characteristics were computed and thoroughly explained. The different ELF spectra were calculated in which strong peak correlate precisely with plasma resonance. Moreover, we also explored the thermodynamic characteristics of the ternary systems by employing the quasi-harmonic Debye model. These compounds were also suitable for thermoelectric applications based on the detailed discussion of the computed significant thermoelectric properties. In general, the advancement of various and promising semiconducting devices and their applications will be supported by the present study.