Structure and piezoelectric properties of 1-μm-thick polar-axis-oriented CaBi<Subscript>4</Subscript>Ti<Subscript>4</Subscript>O<Subscript>15</Subscript> films

1-μm-thick polar-axis-oriented CaBi₄Ti₄O₁₅ (CBTi144) films were fabricated by control of nucleation and growth in alkoxy-derived non-crystalline layers on Pt foils. The oxygen ambient during pre-baking impacted both the cross-sectional microstructure and the crystallographic orientation. The 1-μm-thick film showed relatively high intensities of (100)/(010) diffraction lines in the X-ray diffraction profile and simultaneously had a closely packed dense structure in the transmission electron microscopy cross-sectional profile. Resultantly, the leakage current density decreased to about 7×10^-8 A/cm² at 10 V. The piezoelectric constant d₃₃ was determined to be 260 pm/V at a maximum poling voltage of 60 V by measurements using piezoelectric force microscopy. PACS 77.55.+f; 77.84.-s; 77.65.-j; 68.55.Jk     

Structure and ferro-/piezoelectric properties of bimorph-shape CaBi4Ti4O15 films on Pt foils

In-plane c-axis oriented CaBi₄Ti₄O₁₅ (CBTi144) films were fabricated on Pt foils using a complex metal alkoxide solution. The a/b-axis orientation of the ferroelectric films was affected by the preferred orientation of Pt foil, which is associated with the thickness. The 500 nm-thick CBTi144 films showed good ferro- and piezoelectric properties on 0.010 mm-thick Pt foils. The Pr and Ec were 26 C/cm² and 230 kV/cm, respectively, at an applied voltage of 75 V. The d₃₃ was characterized as 25–34 pm/V by piezoresponse force microscopy. The values enhanced compared to those of the CBTi144 thin film with random orientation. The polar-axis oriented CBTi144 films would open for novel devices as Pb-free piezoelectric materials. PACS 77.84.-s; 68.37.-d; 81.15.-z     

Magnetic properties of Fe<Subscript>3</Subscript>O<Subscript>4</Subscript> surface

The magnetic properties of the magnetite Fe₃O₄(110) surface have been studied by spin resolved Auger electron spectroscopy (SRAES). Experimental spin resolved Auger spectra are presented. The results of calculation of Auger lines polarization carried out on the basis of electronic state density are presented. Problems related to magnetic moments of bivalent (Fe²⁺) and trivalent (Fe³⁺) ions on the Fe₃O₄(110) surface are discussed. It is established that the deposition of a thin bismuth film on the surface results in significant growth of polarization of iron Auger peaks, which is due to additional spin-orbit scattering of electrons by bismuth atoms.     

Band structure of new layered superconductors BaRh<Subscript>2</Subscript>P<Subscript>2</Subscript> and BaIr<Subscript>2</Subscript>P<Subscript>2</Subscript>

The results of ab initio FLAPW-GGA computations of the band structure of two new layered low-temperature superconductors BaRh₂P₂ and BaIr₂P₂ (with a ThCr₂Si₂ tetragonal structure) are presented. As distinct from the family of the isostructural FeAs superconductors, they feature the complete replacement of the magnetic (Fe) metal by the nonmagnetic 4d (Rh) and 5d (Ir) metals. For BaRh₂P₂ and BaIr₂P₂, the energy bands, the distributions of the densities of electronic states, the Fermi surface topology, and the coefficients of the low-temperature electron specific heat and the molar Pauli paramagnetic susceptibility have been determined. An increase in T _C in the BaRh₂P₂ (1 K) → BaIr₂P₂ (2.1 K) transition can assumingly be attributed to the features of their phonon subsystem.     

Ferroelectric and dielectric properties of SrBi<Subscript>4</Subscript>Ti<Subscript>4</Subscript>O<Subscript>15</Subscript> thin films grown on Bi<Subscript>4</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript> film layer

Ferroelectric and dielectric properties of bilayered ferroelectric thin films, SrBi₄Ti₄O₁₅ grown on Bi₄Ti₃O₁₂, were investigated. The thin films were annealed at 700°C under oxygen atmosphere. The bilayered thin films were prepared on a Pt(111)/Ti/SiO₂/Si substrate by a chemical solution deposition method. The dielectric constant and dielectric loss of the bilayered thin films were 645 and 0.09, respectively, at 100 kHz. The value of remnant polarization (2P _r) measured from the ferroelectric thin film capacitors was 60.5 μC/cm² at electric field of 200 kV/cm. The remnant polarization was reduced by 22% of the initial value after 10¹⁰ switching cycles. The results showed that the ferroelectric and dielectric properties of the SrBi₄Ti₄O₁₅ on Bi₄Ti₃O₁₂ ferroelectric thin films were better than those of the SrBi₄Ti₄O₁₅ grown on a Pt-coated Si substrate suggesting that the improved properties may be due to the different nucleation and growth kinetics of SrBi₄Ti₄O₁₅ on the c-axis-oriented Bi₄Ti₃O₁₂ layer or on the Pt-coated Si substrate.     

Electric and magnetic properties of CoFe<Subscript>2</Subscript>O<Subscript>4</Subscript>/Pb(Zr<Subscript>0.52</Subscript>Ti<Subscript>0.48</Subscript>)O<Subscript>3</Subscript> bilayer thin films prepared by pulsed-laser deposition

CoFe₂O₄ (CFO) thin film with highly (111)-preferential orientation was first deposited on the silicon substrate by a pulsed-laser deposition, and then Pb(Zr_0.52Ti_0.48)O₃ (PZT) layers were deposited with different oxygen pressures to form the bilayer CFO/PZT nanocomposite thin films. X-ray diffraction showed that the PZT preferential orientation was strongly dependant on the oxygen pressure. The smooth film surface was obtained after depositing the CFO and PZT layers. The bilayer thin films exhibit good ferromagnetic and ferroelectric properties, and a low leakage current density of 0.004 μA/cm² at 50 kV/cm. The leakage current density curves show loops for the electric polarized field when the electric field reverses. PACS 77.84.Lf; 75.80+q; 81.05.Zx; 81.15.Fg     

De Haas-van Alphen oscillations in the organic quasi-two-dimensional metal (ET)<Subscript>8</Subscript>[Hg<Subscript>4</Subscript>Cl<Subscript>12</Subscript>(C<Subscript>6</Subscript>H<Subscript>5</Subscript>Cl)<Subscript>2</Subscript>]

The behavior of de Haas-van Alphen oscillations in the quasi-2D organic metal (ET)₈[Hg₄Cl₁₂(C₆H₅Cl)₂] was studied in detail. The section of the Fermi surface of this metal is a two-dimensional network of magnetic breakdown orbits. Only two frequencies, which corresponded to allowed closed orbits, F_A and F_MB, were detected. This is in agreement with the earlier studies of Shubnikov-de Haas oscillations in this metal. The reason for the absence of other allowed frequencies remains unclear. The angular dependences of the amplitudes of F_A and F_MB oscillations contain a series of “spin zeros.” An analysis of their positions led us to suggest that many-particle interactions were weakened in (ET)₈[Hg₄Cl₁₂(C₆H₅Cl)₂].     

Phase transition in Bi<Subscript>8</Subscript>Fe<Subscript>6</Subscript>Ti<Subscript>3</Subscript>O<Subscript>27</Subscript> multiferroic ceramics

The polycrystalline Bi₈Fe₆Ti₃O₂₇ compound was prepared by a high-temperature solid-state reaction technique. Preliminary structural analysis by X-ray diffraction (XRD) confirms the formation of a single-phase compound in an orthorhombic crystal system at room temperature. The elemental content of the compound was analyzed by EDAX microanalysis. Microstructural analysis by scanning electron microscopy (SEM) shows that the compound has well defined grains, which are distributed uniformly throughout the surface of the pellet sample. Detailed studies of temperature-dependent dielectric response at various frequencies show dielectric anomalies at 380, 389 and 403°C for 10 kHz, 100 kHz, and 1 MHz respectively. The hysteresis loop observed by applying an electric field of 12 kV/cm on the poled sample with smaller remanent polarization supports the existence of ferroelectricity in this material. The value of d₃₃ of the compound was found to be 19 pC/N.      

A novel way of modifying nano grain size by solution concentration in the growth of ZnAl<Subscript>2</Subscript>O<Subscript>4</Subscript> thin films

A novel route to the growth of thin films of ZnAl₂O₄ in nano-scale order was developed and nano-thin films of ZnAl₂O₄ are grown. The variation of grain size with solution concentration is reported. The thin film was deposited by modified liquid-phase deposition (LPD) technique using a novel acid based chemical reaction for the first time to ternary system. This modified LPD is based on a novel reaction that favours the formation of nanostructures during the treatment of a precursor (here ZnO) and a metal foil (Al) in diluted HF acid. The acid serves both as a solvent and catalyst. Usually, in wet process synthesis of binary systems, the metal foil will act as F⁻ ion scavenger. In this method, formation of a ternary compound as well as growth of thin film nanostructures of that compound was achieved by the same chemical reaction at room temperature. The role of acid concentration in the nanostructure formation is discussed. The relationship between HF concentration and grain size were also graphically enumerated. Structural, compositional and surface morphological properties of thin films were studied using Philips, Xpert-MPD: X-ray diffractometer and Philips, ESEM-TMP + EDAX, Nanoscope-III: AFM. The technique is a novel, simple and low cost route for the growth of nano-thin films of ternary oxide material.     

Weak antilocalization in thin films of the Bi<Subscript>2</Subscript>Te<Subscript>2.7</Subscript>Se<Subscript>0.3</Subscript> solid solution

A technology has been developed for the preparation of thin films of the Bi₂Te_2.7Se_0.3 solid solution through the thermal evaporation in a vacuum using the “hot-wall” method. The high quality of the thin films thus prepared has been confirmed by the X-ray diffraction and Raman scattering data. The electron transport has been investigated over wide ranges of temperatures (1.4–300 K) and magnetic fields (up to 8 T). It has been assumed that the observed weak antilocalization is associated with the dominant contribution from the surface states of a topological insulator. The dephasing length has been estimated.     

Hexagonal-like NiCo<Subscript>2</Subscript>O<Subscript>4</Subscript> nanostructure based high-performance supercapacitor electrodes

A novel approach of double hydroxide-mediated synthesis of nickel cobaltite (NiCo₂O₄) electro-active material by the hydrothermal method is reported. The obtained NiCo₂O₄ electro-active material displays the spinel cubic phase and hexagonal-like morphology. Thermogravimetry analysis confirms the thermal stability of the electrode material. The functional groups and phase formation of NiCo₂O₄ have been confirmed by FT-IR and Raman spectral analysis. The modified NiCo₂O₄ electrode exhibits the highest specific capacitance of 767.5 F g^?1 at a current density of 0.5 A g^?1 in 3 M KOH electrolyte and excellent cyclic stability (94 % capacitance retention after 1000 cycles at a high current density of 5 A g^?1). The excellent electrochemical performance of the electrode is attributed to the hexagonal-like morphology, which contributes to the rich surface electro-active sites and easy transport pathway for the ions during the electrochemical reaction. The attractive Faradic behavior of NiCo₂O₄ electrode has been ascribed to the redox contribution of Ni²⁺/Ni³⁺ and Co²⁺/Co³⁺ metal species in the alkaline medium. The symmetrical two-electrode cell has been fabricated using the NiCo₂O₄ electro-active material with excellent electrochemical properties for supercapacitor applications.     

Absorption spectrum of thin K<Subscript>2</Subscript>CdI<Subscript>4</Subscript> films

The absorption spectrum of thin films of a new compound, K₂CdI₄, was studied. It was established that this compound belongs to direct-bandgap dielectrics and that its low-frequency electronic and excitonic excitations are localized in CdI ₄ ^2? structural blocks of the crystal lattice. It was found that, in M₂CdI₄ compounds (M = K, Rb, Cs), the bandgap width E _g grows and the spin-orbit splitting of the valence band top decreases with increasing ionic radius of the alkali metal.     

Vibrational spectra of monoisotopic SiH<Subscript>4</Subscript> and GeH<Subscript>4</Subscript> in low-temperature matrices

IR absorption spectra of monoisotopic ²⁸SiH₄ and ⁷⁶GeH₄ are studied in Ar and N₂ matrices at 10 K. It is shown that the absorption spectra of silane and germane are similar in the regions of the stretching ν₃ and bending ν₄ vibrations. Four groups of bands can be separated out in the spectra of each molecule: (1) narrow bands characteristic of the matrix isolation studies, (2) broad bands, (3) diffuse absorption with a large value of the spectral moment M ₂^* the intensity of which increases upon annealing, and (4) bands of dimers the intensity of which increases quadratically with concentration. The spectra of ²⁸SiH₄ and ⁷⁶GeH₄ in nitrogen matrices contain a triplet in the stretching region and a doublet in the bending region, which is explained by the change in the molecular symmetry from T _d to C _3V on passage from the gas phase to solid nitrogen.     

High-temperature conductivity and structure of Y<Subscript>2</Subscript>(WO<Subscript>4</Subscript>)<Subscript>3</Subscript> ceramics

The magnitude and character of conductivity were studied for Y₂(WO₄)₃ ceramics synthesized by the ceramic (from oxides) and organic-nitrate procedures. Investigation of the dependence \(\sigma \left( {{\alpha _{{o_2}}}} \right)\) and measurements of the ion transport numbers of charge carriers by the EMF method showed that Y₂(WO₄)₃ is basically an ion conductor. The conductivity is largely determined by the sample preparation conditions related to the dependence of the specific surface area and powder grain size on the synthetic procedure. The maximum high-temperature conductivity of Y₂(WO₄)₃ was 2.51 × 10^–4 S/cm, which roughly corresponds to the conductivities of Sc₂(WO₄)₃ and In₂(WO₄)₃ measured under the same conditions. It was confirmed that Y₂(WO₄)₃ crystallizes as a mixed monoclinic-orthorhombic structure at 1000°C. The character of water incorporation in hydrated Y₂(WO₄)₃ crystals was studied by thermogravimetry and diffuse reflectance IR spectroscopy. A qualitative model of water intercalation was suggested.     

Synthesis of ZnAl<Subscript>2</Subscript>O<Subscript>4</Subscript>/α-Al<Subscript>2</Subscript>O<Subscript>3</Subscript> complex substrates and growth of GaN films

With the solid phase reaction between pulsed-laser-deposited (PLD) ZnO film and α-Al₂O₃ substrate, ZnAl₂O₄/α-Al₂O₃ complex substrates were synthesized. X-ray diffraction (XRD) spectra show that as the reaction proceeds, ZnAl₂O₄ changes from the initial (111)-oriented single crystal to poly-crystal, and then to inadequate (111) orientation. Corresponding scanning electron microscope (SEM) images indicate that the surface morphology of ZnAl₂O₄ transforms from uniform islands to stick structures, and then to bulgy-line structures. In addition, XRD spectra present that ZnAl₂O₄ prepared at low temperature is unstable at the environment of higher temperature. On the as-obtained ZnAl₂O₄/α-Al₂O₃ substrates, GaN films were grown without any nitride buffer using light-radiation heating low-pressure MOCVD (LRH-LP-MOCVD). XRD spectra indicate that GaN film on this kind of complex substrate changes fromc-axis single crystal to poly-crystal as ZnAl₂O₄ layer is thickened. For the single crystal GaN, its full width at half maximum (FWHM) of X-ray rocking curve is 0.4°. Results indicate that islands on thin ZnAl₂O₄ layer can promote nucleation at initial stage of GaN growth, which leads to the (0001)-oriented GaN film.     

Characterization of Zn<Subscript>2</Subscript>SnO<Subscript>4</Subscript> Thin Films Prepared by RF Magnetron Sputtering

Zn₂SnO₄ (ZTO) is a stable semiconductor in ZnO–SnO₂ system and important transparent conducting oxide (TCO) predominantly used in optoelectronic devices. ZTO thin films were prepared by RF magnetron sputtering using Zn₂SnO₄ ceramic target in this paper. The effects of annealing temperatures and oxygen contents on characterization of ZTO thin films were studied. The results show that ZTO thin films prepared by RF magnetron sputtering are amorphous with an optical band gap of 3.22 eV. After annealing at 650°C in Ar atmosphere for 40 min, ZTO films possess a spinel structure with an optical band gap of 3.62 eV. The atomic force microscope (AFM) data of morphology reveals that the surface roughness of films is about 2 nm. The results of energy dispersive spectrometer (EDS) show that the concentration ratio of Zn to Sn is in the range from 1.44 to 1.57. The results of Hall-effect-measurement system reveal that the resistivity of films varies from 102 to 10–1 Ωcm, carrier concentration is about 10¹⁷ cm^–3, and mobility ranges from 10⁰ to 10¹ cm² v^–1 s^–1.     

Synthesis,characterization, and cell performance of Li<Subscript>0.5</Subscript>FeV<Subscript>1.5</Subscript>O<Subscript>4</Subscript>

A Li_0.5FeV_1.5O₄ sample was synthesized using sol-gel route. The X-ray diffraction study indicates formation of spinel phase (with Fd3m space group) for this sample. LiO₄, LiO₆, and V-O bonds were identified from the Raman spectrum, while LiO₄ and Fe-O bonds were identified from the FTIR spectrum of this sample phase. The FESEM study indicates formation of inhomogeneous grains. The surface area of 74.39 m²/g was estimated from the Brunauer-Emmett-Teller (BET) surface area analysis technique. The cyclic voltammetry study of Li_0.5FeV_1.5O₄ indicates an anodic peak at 2.1 V while a cathodic peak at 1.98 V. The charge-discharge study exhibits two voltage plateaus respectively at 2.1 and at 4 V. Stable electrochemical capacity of 40 mAh/g for Li_0.5FeV_1.5O₄ was found for 30 cycles. The electrochemical impedance spectroscopy study indicates smaller bulk resistance and higher ionic diffusion, i.e., less Warburg impedance for this phase. An energy density of 89 Wh/kg, a power density of 33 W/kg, and a 90% Coulombic efficiency was achieved with relatively good cyclic stability from Li_0.5FeV_1.5O₄.     

Microemulsion-mediated in-situ synthesis and magnetic characterization of polyaniline/Zn<Subscript>0.5</Subscript>Cu<Subscript>0.5</Subscript>Fe<Subscript>2</Subscript>O<Subscript>4</Subscript> nanocomposite

Polyaniline/Zn_0.5Cu_0.5Fe₂O₄ nanocomposite was synthesized by a simple, general and inexpensive in-situ polymerization method in w/o microemulsion. The effects of polyaniline coating on the magnetic properties of Zn_0.5Cu_0.5Fe₂O₄ nanoparticles were investigated. The structural, morphological and magnetic properties of as-prepared samples were characterized by X-ray diffraction (XRD), Fourier transform infrared (FTIR) spectra, scanning electron microscopy (SEM) and magnetic measurements. The morphology analysis confirmed that polyaniline was deposited on the porous surface of magnetic Zn_0.5Cu_0.5Fe₂O₄. It was shown that the saturation magnetization and coercivity of Zn_0.5Cu_0.5Fe₂O₄ decreased after polyaniline coating, which can be interpreted by the interparticle dipole–dipole interactions that contributed to magnetic anisotropy and changed the magnetic properties of the nanoparticles. PACS  74.25.Ha; 81.05.-t; 81.05.Lg     

Electronic absorption spectrum of thin K<Subscript>2</Subscript>ZnI<Subscript>4</Subscript> films

The absorption spectrum of thin K₂ZnI₄ films has been investigated in the range of 3–6 eV at temperatures from 90 to 340 K. It is established that this compound belongs to direct-gap insulators; low-frequency exciton excitations are localized in the ZnI₄ lattice layers and have a quasi-two-dimensional character. The spectral analysis revealed the existence of two K₂ZnI₄ modifications, which presumably belong to the monoclinic (I) and orthorhombic (II) phases. The temperature dependences of the spectral position and halfwidth of the low-frequency exciton band in K₂ZnI₄ revealed the existence of first-order phase transitions at 215 and 225 K in the monoclinic and orthorhombic phases, respectively.     

Possible weakening of the many-body interactions in the organic quasi-two-dimensional metal α-(BETS)<Subscript>2</Subscript>NH<Subscript>4</Subscript>Hg(SCN)<Subscript>4</Subscript>

The behavior of the de Haas-van Alphen oscillations in the organic quasi-two-dimensional metal α-(BETS)₂NH₄Hg(SCN)₄ is comprehensively studied as a function of the angle between the magnetic-field direction and the normal to the conducting layers in it. The angular dependence of the oscillation amplitude has minima at angles of ±40° and ±62°, which are caused by the spin zero effect. The positions of these minima suggest that the electron-phonon and electron-electron interactions in this metal are significantly weakened.