高亮度掺杂红色有机电致发光器件的制备与光电性能研究

采用真空热蒸镀的方法,在高精度膜厚控制仪监控下,实现了有机薄膜功能材料的精确蒸镀,其中发光层采用主体材料与掺杂材料在一个真空腔体同时共同蒸发,制备了一种高亮度多层结构的红色有机电致发光(OLED)器件:ITO-CuPc(20 nm)--αNPD(60 nm)-Alq3(40 nm)∶Rubrene(10%)∶DCJTB(1%)-Alq3(20 nm)-LiF(10 nm)-Al(100 nm)。研究发现:驱动在电压为5~52 V变化时,其亮度基本满足线性增加关系,随之饱和;随着驱动电压的变化,其电致发光光谱有蓝移的现象,发射峰从638 nm变到632 nm,同时色坐标CIEx,y值也发生相应的变化;器件的流明效率在驱动电压较低时(V=5 V),达到最大值ηLmax=0.497 lm.W-1,随着驱动电压的增加,流明效率有降低的趋势。     

Organic photovoltaic cells with copper （Ⅱ） tetra-methyl substituted phthalocyanine

Efficient heterojunction organic photovoltaic （OPV） cells are fabricated based on copper tetra-methyl phthalocyanine （CuMePc） as donor and fullerene （C60） as acceptor. The power conversion efficiency of CuMePc/C60 OPV cell （2.52%） is increased by 88% compared with that of the non-peripheral substituted copper phthalocyanine （CuPc）/C60 OPV cell （1.34%）. The introduction of methyl substituent leads to stronger π–π interaction of CuMePc （～ 3.5 ？） than that of CuPc （～ 3.8 ？）. The efficiency improvement is attributed to the enhanced carrier mobility of CuMePc thin film （1.1×10-3 cm2/V·s） and better film morphology by introducing methyl groups into the periphery of CuPc molecule.     

Highly surface-textured and conducting ZnO：Al films fabricated from oxygen-deficient target for Cu（In,Ga）Se2 solar cell application

Highly conducting ZnO:Al(AZO) films are normally prepared through substrate heating and post-annealing in reducing atmosphere, which is deleterious to maintain the high transparency of films and the overall solar cell performance. Here we fabricate AZO films through one-step sputtering at room temperature using oxygen-deficient targets prepared via double crucible method. The best-performed AZO film achieves a low resistivity of 4.4 × 10-4 ? cm, a high haze factor of 35.0%, and optimizes the efficiency of Cu(In, Ga)Se2 solar cell with a high value of 14.15%. This letter demonstrates that oxygen deficiency can induce high surface texture, conductivity, and boost solar cell performance.     

Advanced solar materials for thin-film photovoltaic cells

As one of the most promising solutions for the green energy, thin-film photovoltaic cell technology is still immature and far from large-scale industrialization. The major issue is getting low cost and stable module efficiency. To solve these problems, a large amount of advanced solar materials have been developed to improve all parts of solar cell modules. Here, some new solar material developments applied in different critical parts of chalcogenide thin-film photovoltaic cells are reviewed. The main efforts are focused on improving light trapping and antireflection, internal quantum efficiency and collection of photo-generated carriers.     

Enhancing the performance of thin film CdS/PbS photovoltaic solar cells

This work investigates dependence of the short-circuit current density, open-circuit voltage, fill factor and efficiency of a thin film CdS/PbS solar cell on thickness of transparent conductive oxide (TCO) layer, thickness of window layer (CdS), concentration of uncompensated acceptors (width of space-charge region), carrier lifetime in PbS and the reflectivity from metallic back contact. The effect of optical losses, front and rear recombination losses as well as the recombination losses on space-charge region are also considered in this study. As a result, by thinning the front contact layer indium tin oxide from 400 to 100 nm and window layer (CdS) from 200 to 100 nm it is possible to reduce the optical losses from 32 to 20%. The effect of electron lifetime on the internal and external quantum efficiency can be neglected at high width of the space-charge region. The maximum current density of 18.4 mA/cm² is achieved at wide space-charge region (concentration of uncompensated acceptors = 10¹⁵ cm^?3) and the longest lifetime (τ_n = 10^?6 s) where the optical and recombination losses are about 55%. The maximum efficiency of 5.17%, maximum open-circuit voltage of 417 mV and approximately fixed fill factor of 74% are yielded at optimum conditions such as: electron lifetime = 10^?6 s; concentration of uncompensated acceptors = 10¹⁶ cm^?3; thickness of TCO = 100 nm; thickness of CdS = 100 nm; velocity of surface and rear recombination = 10⁷ cm/s and thickness of absorber layer = 3 μm. When the reflectance from the back contact is 100%, the cell parameters improve and the cell efficiency records a value of 6.1% under the above conditions.     

四元硫化物Cu2Zn(Ti,Zr, Hf)S4:一类新颖光伏材料

采用第一性原理电子结构方法研究了四价过渡金属Ti, Zr和Hf替代Cu₂ZnSnS₄(CZTS)中Sn原子以及Se替代S原子所得到的四元硫族化合物的电子结构、光学性质和晶体结构的稳定性. 实验上用Se替代CZTS中部分S得到的Cu₂ZnSnS_4-xSe_x(CZTSSe)作为光吸收材料, 可以进一步提高光伏效率. 我们计算表明用Se替代S后, CZTSe的价带顶明显下移, 并接近Cu(In, Ga) Se₂ (CIGS)价带顶位置. 与CZTSe的电子结构特征一样, Cu₂Zn(Ti, Zr, Hf)S₄四元硫化物的价带顶与母体材料CZTS相比也向低能移动, 并接近CIGS价带顶位置. 由于高光伏效率要求窗口材料ZnO、缓冲层材料和光吸收材料的价带顶和带隙满足一定的渐进的变化关系, 因此可以预见用Cu₂Zn(Ti, Zr, Hf)S₄作光吸收材料可以有效地提高甚至接近CIGS的光伏效率. 通过计算弹性常数和声子谱, 以及有限温度下第一性原理分子动力学模拟, 发现Cu₂Zn(Ti, Zr, Hf)S₄的结构稳定性与CZTS相近. 进一步计算Cu₂Zn(Ti, Zr, Hf)S₄与不同缓冲层间和窗口材料与缓冲层间的反射系数, 并讨论了ZnSe, In₂S₃, ZnS作为缓冲层材料和TiO₂作为窗口材料对光伏效率可能的影响.     

9,10-Anthracene-centered oligo(p-phenyleneethynylene)s with end-capping didecylamines exhibiting enhanced two-photon fluorescence action cross-section

This study reports the synthesis and the two-photon absorption (TPA) properties of a series of 9,10-anthracene-centred oligo(p-phenyleneethynylene)s with end-capping didecylamine. The results show that both the maximal TPA cross-sections (δ_max) and the fluorescence quantum yields (Φ) of the oligomers increase with the extension of phenylethynyl bridges. Interestingly, the Φδ_max per repeating unit to is obviously enhanced by extending linearly conjugation size of the oligomers. Moreover, these oligomers all show the maximal two-photon absorption cross-sections at 800 nm and emit strong green to yellowish-green two-photon excited fluorescence. These materials may find applications in which two-photon excited fluorescence and photo-induced electron transfer are utilized.     

Star-shaped oligo(ethylene glycol) ethers (OEGE) as a new type of plasticizer for polymer gel electrolytes

Star-shaped oligo(ethylene glycol) methyl ethers (three and four arm molecules of various molecular weights) were synthesized and characterized with regard to viscosity, thermal transitions, ability to solvate the electrolyte LiCF₃SO₃ and the ionic conductivity of their LiCF₃SO₃ solutions in comparison to linear oligo(ethylene glycol) methyl ethers. Polymer gel electrolytes were prepared by photopolymerization of tri(ethylene glycol) dimethacrylate (EG₃DMA) or its copolymerization with the polar comonomer cyanomethyl methacrylate (CyMA) in the presence of the oligo(ethylene glycol) ethers mentioned above and of the electrolyte LiCF₃SO₃. The gels were characterized concerning their thermal transitions, thermo-mechanical properties, their ability to solvate the electrolyte and their ionic conductivity. In comparison to the linear plasticizers the star-shaped ones show a distinctly lower tendency to crystallize, which is even completely suppressed in several cases. Intensified ion association was found in LiCF₃SO₃ solutions of the star-shaped plasticizers, if the number of the ethylene glycol units per arm was lower than 4. Therefore, the conductivity of the solutions and the gels was lower than that with linear plasticizers at room temperature. The modification of the polymer matrix by copolymerization with 20 mol% CyMA resulted in a maximum of the ionic conductivity σ≈1×10⁻⁵ S/cm of gels with star-shaped plasticizers at 25 °C.     

部分阳离子取代优化铜锌锡硫硒薄膜太阳能电池性能研究进展

作为无机化合物薄膜太阳能电池中具有代表性的一类电池,铜锌锡硫硒(Cu2ZnSn(S,Se)4,简称CZTSSe)薄膜太阳能电池因其组成元素地壳含量丰富、低毒等优点受到广泛关注.目前,吸收层的高缺陷密度和器件的低开路电压被认为是限制该类电池效率的两个关键因素.为了突破这两大困境,科研人员发展了阳离子取代方法,即通过引入其...     

低温超薄高效Cu(In,Ga)Se2太阳电池的实现

衬底温度保持恒定, 在Se气氛下按照一定的元素配比顺序蒸发Ga, In, Cu制备厚度约为0.7 μrm的Cu(In_0.7Ga_0.3)Se₂ (CIGS)薄膜. 利用X射线衍射仪分析薄膜的晶体结构及物相组成, 扫描电子显微镜表征薄膜形貌及结晶质量, 二次离子质谱仪测试薄膜内部元素分布, 拉曼散射谱 分析薄膜表面构成, 带积分球附件的分光光度计测量薄膜光学性能. 研究发现在Ga-In-Se预制层内, In主要通过晶界扩散引起Ga/(Ga+In)分布均匀化. 衬底温度高于450 ℃时, 薄膜呈现单一的Cu(In_0.7Ga_0.3)Se₂相; 低于400℃, 薄膜存在严重的Ga的两相分离现象, 且高含Ga相主要存在于薄膜的上下表面; 低于300 ℃, 薄膜结晶质量进一步恶化. 薄膜表层的高含Ga相Cu(In_0.5Ga_0.5)Se₂以小晶粒形式均匀分布于薄膜表面, 增加了薄膜的粗糙度, 在电池内形成陷光结构, 提高了超薄电池对光的吸收. 加上带隙值较小的低含Ga相的存在, 使电池短路电流密度得到较大改善. 衬底温度在550 ℃–350 ℃变化时, 短路电流密度J_SC是影响超薄电池转换效率的主要因素; 而衬底温度T_sub低于300 ℃时, 开路电压V_OC和填充因子FF降低已成为电池性能减退的主要原因. T_sub为350 ℃时制备的0.7 μm左右的超薄CIGS电池转换效率达到了10.3%. 关键词： 2薄膜')" href="#">Cu(In,Ga)Se₂薄膜 衬底温度 超薄 太阳电池     

Detailed analysis of ultrathin fluorescent red dye interlayer for organic photovoltaic cells

The influence of an ultrathin 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) fluorescent dye layer at donor/acceptor heterojunction on the performance of small-molecule organic photovoltaic (OPV) cell is studied. The structure of OPV cell is of indium-tin oxide (ITO)/copper phthalocyanine (CuPc)/DCJTB/fullerene (C₆₀)/bathophenanthroline (Bphen)/Ag. The results show that open circuit voltage (V_OC) increases to 0.57 V as the film thickness of DCJTB layer increases from 0.2 to 2.0 nm. By using an equivalent circuit model, the enhancement of V_OC is found to be attributed to the reduced reverse saturation current density (J_S) which is due to the lower highest occupied molecular orbital (HOMO) level in DCJTB than that in CuPc. Also, the short circuit current density (J_SC) is affected when the DCJTB layer becomes thicker, resulting from the high series resistance R_SA due to the low charge carrier mobility of fluorescent red dye.     

Insights into the nature of X(3872) through B meson decays

We study the \begin{document}$ B_{c,u,d}\to X(3872)P $\end{document} decays in the perturbative QCD (PQCD) approach, involving the puzzling resonance \begin{document}$ X(3872) $\end{document}, where P represents a light pseudoscalar meson (K or π). Assuming \begin{document}$ X(3872) $\end{document} to be a \begin{document}$ 1^{++} $\end{document} charmonium state, we obtain the following results. (a) The branching ratios of the \begin{document}$ B^+_c\to X(3872)\pi^+ $\end{document} and \begin{document}$ B^+_c\to X(3872) K^+ $\end{document} decays are consistent with the results predicted by the covariant light-front approach within errors; however, they are larger than those given by the generalized factorization approach. (b) The branching ratio of the \begin{document}$ B^+\to X(3872)K^+ $\end{document} decay is predicted as \begin{document}$ (3.8^{+1.1}_{-1.0})\times10^{-4} $\end{document}, which is smaller than the previous PQCD calculation result but still slightly larger than the upper limits set by Belle and BaBar. Hence, we suggest that the\begin{document}$ B^{0,+}\to X(3872)K^{0,+} $\end{document} decays should be precisely measured by the LHCb and Belle II experiments to help probe the inner structure of \begin{document}$ X(3872) $\end{document}. (c) Compared with the \begin{document}$ B_{u,d}\to X(3872)K $\end{document}decays, the \begin{document}$ B_{u,d}\to X(3872)\pi $\end{document} decays have significantly smaller branching ratios, which drop to values as low as \begin{document}$ 10^{-6} $\end{document}. (d) The direct CP violations of these considered decays are small (\begin{document}$ 10^{-3}\sim 10^{-2} $\end{document}) because the penguin contributions are loop suppressed compared to the tree contributions. The mixing-induced CP violation of the \begin{document}$ B\to X(3872)K^0_S $\end{document} decay is highly consistent with the current world average value \begin{document}$ \sin2\beta=(69.9\pm1.7)$\end{document}%. Experimentally testing the results for the branching ratios and CP violations, including the implicit \begin{document}$S U(3)$\end{document} and isospin symmetries of these decays, helps probe the nature of \begin{document}$ X(3872) $\end{document}.     

用原子轨道强耦合方法研究H(1s)+H(1s)碰撞的反应截面

采用单电子的双中心原子轨道强耦合方法,研究了1-100 ke VH(1s)+H(1s)碰撞体系的激发、俘获和失去电子总截面,并分别与前人的理论结果和实验结果进行了比较.研究表明,采用双中心原子轨道强耦合方法得到的H(1s)+H(1s)体系激发到H(2s)过程和失去电子过程的截面与实验符合很好.