一种电光可调的铌酸锂/钠基表面等离子体定向耦合器

为了满足日益增加的集成光子器件设计的需求,本文研究了一种铌酸锂/钠表面等离子体波导(Li Nb O3/Na surface plasmonic waveguide, LNSPW),并利用LNSPW构成电光可调的定向耦合器(directional coupling,DC).利用有限元方法 (finite element method, FEM)对波导的模式特性和耦合器的耦合特性进行了分析.结果表明,随着波导尺寸的增大,传播长度可达约200μm,归一化有效模场面积小于0.4.通过调节耦合间距(W_gap)、耦合长度(L_C)和工作波长(λ)等参数,铌酸锂钠表面等离子体波导构建的定向耦合结构可实现3 d B耦合.当W_gap=100 nm和L_C=17μm时, DC在V₀=53 V时可实现3 d B耦合,且具有较好的方向性和隔离度.LNSPW的研究为实现可调的DC提供了一种可行的方案,在集成电光可调器件研究领域有潜在的应用前景.除此之外, LNSPW还可广泛应用于非线性光学、光信号处理及光全...     

Design of tunable asymmetric directional coupler filter using periodically segmented Ti:LiNbO3 waveguides

A tunable wavelength filter is designed using Ti:LiNbO₃ asymmetric directional coupler. One arm of the directional coupler is made of continuous waveguide while the other arm is periodic segmented. This segmentation reduces the lithographic steps and hence the fabrication cost required for such asymmetric coupler based filter. The propagation constant of periodical segmented and continuous waveguides are analysed using Effective-Index-based Matrix Method. The tunability is achieved using electro-optic property of LiNbO₃.     

1.5μm Ti:LiNbO_3光波导TE_0模偏振器

在1.523μm波长He-Ne激光,对于Z切Ti扩散LiNbO_3光波导及其带有金属包覆/介质缓冲层的偏振器结构,理论上计算了单模波导的工艺参数和基模的吸收损耗系数.文中用TM_0模的共振吸收效应,在1.5μm波长首次研制成Ti:LiNbO_3光波导TE_0模偏振器.当器件长度为2mm和9mm时,其消光比分别为20dB和25dB.     

1310nm/1550nm单模光纤波分复用器的研制

报道了熔锥型1310nm/1550nm波分复用器的设计和制作方法。运用光纤耦合器的耦合机理,从理论上得出了耦合功率和拉伸长度的关系,当拉伸长度大约为9.5mm时,可以实现1310nm/1550nm波分复用。采用熔融拉锥系统,制作了样品。测试表明,器件的隔离度大于21dB,附加损耗小于0.1dB,该器件的指标都达到了实用化的要求。     

极化子荧光及其断层扫描对Ti:LiNbO3光波导表征研究

小极化子(Nb⁴⁺_Li)荧光处于700—950 nm谱段，对不同化学还原程度同组分的纯铌酸锂晶体的研究表明荧光的强度反映了化学还原程度的强弱.从小极化子浅层能级出发，提出以“1中心3级态跃迁”来描述小极化子的受激荧光过程.钛扩散铌酸锂光波导(Ti：LiNbO₃)表面还原程度的均匀性可能在波导制造的热扩散过程中被破坏.在对铌酸锂波导表面、深部的扫描结果中，荧光的强度呈现出表面与深部、波导内与外的差异，表面的强度是深部的6—8倍.研究表明，利用非损伤性的极化子荧光谱，对加工过程热处理进行检控是非常有效的.同时，波导内与外的荧光强度差异间接反映了波导的横切面的外形.     

三维有限差分波束传输法：用于Ti：LiNbO3方向耦合器的模拟

提出求解三维傍轴近似波动方程的交替方向隐式并分格式，并用它模拟Ｔｉ：ＬｉＮｂＯ３方向耦合器。     

Variational analysis of Er:Ti:LiNbO3 waveguide lasers based on Gaussian/two-half Gaussian mode field distribution

Starting with two dimensional, scalar wave equation, a variational equation was established for the fundamental TE and TM modes guided in Ti:LiNbO₃ waveguides on the basis of assuming a symmetric Gaussian mode field function in the width direction and two-half Gaussian trial functions in the depth direction. The controllable waveguide fabrication parameters, including channel width, diffusion temperature, initial Ti-strip thickness and diffusion time, dependent of fundamental mode size, effective pump area, coupling efficiency between pump and laser modes, and the coupling loss between a Ti:LiNbO₃ waveguide and a fiber were numerically calculated for Z-cut Er:Ti:LiNbO₃ channel waveguide lasers at three possible emission wavelengths 1532,1563 and 1576 nm and two possible pump wavelengths 1480 and 980 nm. The calculated results were compared with those of Gaussian/Hermite–Gaussian mode field distribution in detail.     

Zn：LiNbO3晶体倍频性能的研究

在ＬｉＮｂＯ３晶体中掺入ＺｎＯ，生长ＺｎＯ：ＬｉＮｂＯ３晶体，当ＺｎＯ的掺入浓度高于６ｍｏｌ％时，晶体的抗光损伤能力提高两个数量级，与高掺Ｍｇｏ相似。Ｚｎ：ＬｉＮｂＯ３的倍频转换效率可达５０％左右，高于Ｍｇ；ＬｉＮｂＯ３。本文对Ｚｎ：ＬｉＮｂＯ３晶体中Ｚｎ＾２＋离子占痊以及抗光损伤增强机理进行了初步探讨。     

Structure and optical damage resistance of near-stoichiometric Zn:Fe:LiNbO3 crystals

A series of near-stoichiometric Zn:Fe:LiNbO₃ crystals were grown by the high-temperature top-seed solution growth (HTTSSG) method from stoichiometric melts doped with 6 mol% K₂O. Infrared (IR) transmission spectra were measured and discussed in terms of the defect structure of the near-stoichiometric Zn:Fe:LiNbO₃ crystals. The results of the transmitted beam pattern distortion method show that the optical damage resistance of the near-stoichiometric Zn:Fe:LiNbO₃ crystals increases rapidly when the ZnO concentration exceeds a threshold value. The threshold value concentration of ZnO of the near-stoichiometric Zn:Fe:LiNbO₃ crystals is much lower than that of the congruent LiNbO₃ crystals. The dependence of the optical damage resistance on the defect structure of the near-stoichiometric Zn:Fe:LiNbO₃ crystals are discussed, and the holographic recording properties of the near-stoichiometric Zn:Fe:LiNbO₃ crystals are investigated.     

Near-stoichiometric Ti:LiNbO3 strip waveguide with varied substrate refractive index in waveguide layer

We report the near-stoichiometric Ti:LiNbO3 strip waveguides fabricated by vapour transport equilibration (VTE) at 1060 C for 12 h and co-diffusion of 4-8 μm wide, 115-nm thick Ti-strips. Optical studies show that these waveguides are monomode at 1.5 μm and have losses of 1.3 and 1.1 dB/cm for the TM and TE modes, respectively. In the waveguide width/depth direction, the mode field follows a Gauss/Hermite-Gauss profile. A secondary ion mass spectrometry study reveals that the Ti profile follows a sum of two error functions along the width direction and a complementary error function in the depth direction. Micro-Raman analysis shows that the Li-composition in the depth direction also follows a complementary error function. The mean Li/Nb ratio in the waveguide layer is about 0.98. The inhomogeneous Li-composition profile results in a varied substrate index in the guiding layer, and the refractive index profile in the guiding layer is given.     

Effect of wavelength of sensitizing light on holographic storage properties in LiNbO3:Fe:Ni crystal

By sensitizing with 514 nm green light, 488 nm blue light and 390 nm ultraviolet light, respectively, recording with 633 nm red light, effect of wavelength of sensitizing light on holographic storage properties in LiNbO₃:Fe:Ni crystal is investigated in detail. It is shown that by shortening the wavelength of sensitizing light gradually, nonvolatile holographic recording properties of oxidized LiNbO₃:Fe:Ni crystal is optimized gradually, 390 nm ultraviolet light is the best as the sensitizing light. Considering the absorption of sensitizing light, to obtain the best performance in two-center holographic recording we must choose a sensitizing wavelength that is long enough to prevent unwanted absorptions (band-to-band, etc.) and short enough to result in efficient sensitization from the deep traps. So in practice a trade-off is always needed. Explanation is presented theoretically.     

Holographic Storage Parametric Optimization of the Crystal LiNbO3:Fe Based on One-center Model

Based on one-center model, the effects of the doping amount and the degrees of reduction and oxidation on the dynamic range M, the response time and the photorefractive sensitivity in the crystal LiNbO3:Fe are analyzed in detail. The principle of material optimization is discussed. The best crystal thickness (about 1.4～2.6 mm) for the maximum dynamic range M is calculated for the different doping amounts. The results show that the more the doping amount, the lighter the reduction of the crystal should be chosen, and that the heavier the reduction of the crystal, the less effect the doping amount has on the response time. The dynamic range M is in conflict with the response time. Due to the difficulty of processing crystals, the thickness is increased to 5 mm at the cost of decreasing the dynamic range M by 0.3～0.5.     

Characterization of Annealed, Proton Exchange Optical Waveguides in Y-cut MgO:LiNbO3 Crystal

It is reported the results of a systematic study on planar waveguides fabricated in Y-cut MgO:LiNbO3 crystal. The index profile of the as-exchanged waveguide can be modeled as a step-like one. It is deduced the diffusion coefficient and the activation energy for the proton exchange process. The surface index increases Δne of around 0.127 after proton exchange can be reduced by post thermal annealing. The effects of the annealing on the index profile and guide depth were found not as fast as it does on a pure LiNbO3 crystal.     

Intensity dependence of two-center nonvolatile holographic recording in LiNbO3:Cu:Ce crystals

Nonvolatile photorefractive gratings have been recorded in LiNbO₃:Cu:Ce crystals by using a He–Ne laser (633 nm) for recording and an argon ion laser (458 nm) for sensitizing. The sensitizing light increases the recording sensitivity by a−bexp(−I_s/c) and saturation behavior will appear with high enough intensity of sensitizing light. The recording light increases the slope of η^1/2 as a function of time during the initial stages of hologram formation by sublinear I^x_r (x<1) and thus the recording light decreases the recording sensitivity. The dependence of saturation diffraction efficiency on the intensities of the recording and sensitizing light shows that there is a maximum dynamic range of the recording process.     

Mode-selective coupler for wavelength multiplexing using LiNbO<Subscript>3</Subscript>:Ti optical waveguides

A mode-selective directional coupler based on titanium in-diffused channel waveguides in lithium niobate is investigated. This coupler may be utilized as a key part of an add-drop multiplexer for dense wavelength division multiplexing in optical network nodes. The proposed coupler is based on evanescent coupling of the fundamental mode of a single-mode channel to the first higher mode of a parallel bi-modal waveguide. Our experimental results show that a compact directional coupler with coupling efficiencies larger than 90%, large bandwidth around 1550 nm, and with negligible polarization dependence can be realized using electro-optic lithium niobate substrates. Presented at 9-th International Workshop on Nonlinear Optics Applications, NOA 2007, May 17–20, 2007, Świnoujście, Poland     

铟掺杂对Fe:LiNbO3晶体近红外光折变性能的影响

采用在Fe:LiNbO3中掺入了铟离子生长的双掺杂InFe:LiNbO3晶体,以波长为1064 nm的近红外会聚光束作为记录光源,通过数字观测装置,对比研究了铟离子掺入前后Fe:LiNbO3晶体和InFe:LiNbO3晶体的光折变性能。实验研究结果表明,铟离子掺入后晶体的光折变响应速度和抗光折变能力明显提高,饱和折射率变化量降低。初步分析认为,InFe:LiNbO3晶体光折变性能的增强是由于掺入的铟离子取代了部分光折变敏感中心,降低了光敏中心的数量,导致晶体光电导增大,响应时间随之缩短。     

Characteristic of a broadband Ti:LiNbO3 optical modulator with buried electrodes and etched grooves in the buffer layer

Traveling wave Ti:LiNbO₃ Mach-Zehnder optical modulators with buried electrodes and etched grooves in the SiO₂ buffer layer are analyzed by the finite element method. The tradeoff between the bandwidth BW and the half-wave voltage Vπ is discussed. The value of BW/Vπ is used to weight the total performance of the modulator. Taking a thick buffer layer and etching deep grooves in the buffer layer are demonstrated as two effective methods to improve the performance of the modulator. A 3-dB optical bandwidth of 18 GHz with half-wave voltage 5V at a wavelength of 1.55 pm could be obtained even though the electrode is not very thick. When the requirement of half-wave voltage is not very critical, a bandwidth of more than 100 GHz can be obtained.     

Nonvolatile holographic recording in Ti, Fe Co-doped LiTaO3 crystal

Ti, Fe Co-doped LiTaO₃ (LT) crystals have been grown by the Czochralski method from the congruent melts. The absorption spectra of crystal were measured before and after ultraviolet illumination. Holograms have been recorded in doubly doped crystals with continuous-wave laser light by use of two-color method. The maximum value of refractive-index changes 7×10⁻⁵ is achieved.     

Fe:Mg:LiNbO3晶体电子结构和吸收光谱的第一性原理研究

基于密度泛函理论的第一性原理, 研究了LiNbO₃晶体以及不同Mg浓度的Fe:Mg:LiNbO₃晶体的电子结构和吸收光谱. 研究结果显示: 掺铁铌酸锂晶体的杂质能级由Fe 的3d轨道和O的2p轨道贡献, 禁带宽度为2.845 eV; 对于Mg, Fe共掺样品, Mg的浓度小于或等于阈值时, 禁带宽度分别为2.901 和2.805 eV; 掺铁铌酸锂晶体的吸收谱在2.3和2.6 eV处分别存在一个吸收峰, 其强度因Mg的浓度不同而发生变化. 研究结果还表明, 不同浓度的Mg对晶体内Fe²⁺和Fe³⁺的浓度以及占位产生了不同的影响. 还提出了光电子的形成不应单独考虑铁的轨道电子态, 而应同时考虑与铁成键的氧的轨道电子态的观点.     

Nonvolatile photorefractive holographic recording in Sc:Ce:Cu:LiNbO3

In this paper experimental studies of nonvolatile photorefractive holographic recording in Ce:Cu:LiNbO₃ crystals doped with Sc(0,1,2,3 mol%) were carried out. The Sc:Ce:Cu:LiNbO₃ crystals were grown by the Czochralski method and oxidized in Nb₂O₅ powders. The nonvolatile holographic recording in Sc:Ce:Cu:LiNbO₃ crystals was realized by the two-photon fixed method. We found that the recording time of Sc:Ce:Cu:LiNbO₃ crystal became shorter with the increase of Sc doping concentration, especially doping with Sc(3 mol%), which exceeds the so-called threshold, and there was little loss of nonvolatile diffraction efficiencies between Sc(3 mol%):Ce:Cu:LiNbO₃ and Ce:Cu:LiNbO₃ crystals.